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公开(公告)号：US20120090784A1
公开(公告)日：2012-04-19
申请号：US13253627
申请日：2011-10-05
IPC分类号： C23F1/08 , C23C16/505 , H05B3/02 , C23C16/458
CPC分类号： H05B3/42 , H01J37/32522 , H05B2203/003
摘要： Embodiments of the invention generally provide a lid heater for a plasma processing chamber. In one embodiment, a lid heater assembly is provided that includes a thermally conductive base. The thermally conductive base has a planar ring shape defining an inner opening. The lid heater assembly further includes a heating element disposed on the thermally conductive base, and an insulated center core disposed across the inner opening of the thermally conductive base.
摘要翻译： 本发明的实施例通常提供一种用于等离子体处理室的盖式加热器。 在一个实施例中，提供了包括导热基座的盖加热器组件。 导热基座具有限定内部开口的平面环状。 盖加热器组件还包括设置在导热基座上的加热元件，以及横跨导热基底的内部开口设置的绝缘中心芯。
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公开(公告)号：US07635546B2
公开(公告)日：2009-12-22
申请号：US11838418
申请日：2007-08-14
IPC分类号： G03F1/00
摘要： A phase shifting photomask comprising a patterned film stack formed on a transparent substrate and a method of fabricating the photomask are disclosed. In one embodiment, the film stack includes a first layer having a pre-determined value of transparency to light of an illumination source of a lithographic system and a second layer that is substantially transparent to the light and facilitates in the light a pre-determined phase shift.
摘要翻译： 公开了一种包括形成在透明基板上的图案化膜堆叠的相移光掩模和制造光掩模的方法。 在一个实施例中，薄膜叠层包括具有对光刻系统的照明源的透明度的预定值的第一层和对光基本上透明的第二层，并且在光中有助于预定阶段 转移。
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公开(公告)号：US20080102202A1
公开(公告)日：2008-05-01
申请号：US11589426
申请日：2006-10-30
申请人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
发明人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
CPC分类号： H01J37/32082 , H01J37/321 , H01J37/3244 , H01J37/32449
摘要： A plasma reactor for processing a workpiece such as a mask or wafer includes a vacuum chamber having a cylindrical side wall, a ceiling overlying the side wall and a ring supported on a top edge of the side wall and supporting the ceiling, the ring comprising an external surface and an interior surface. An RF plasma source power applicator and an RF source power generator coupled to the applicator furnish plasma source power. Plural passages extend in a radial direction through the ring from the external surface to the interior surface and are spaced apart along a circumference of the ring. A process gas supply furnishes process gas. An external gas flow conduit apparatus outside of the chamber extends around a circumference of the chamber and is coupled to the process gas supply. Plural external gas flow valves outside of the chamber are coupled to the external conduit at respective locations spaced apart along the conduit, each of the valves having: (a) a controlled gas output port coupled to a respective one of the plural passages at the external surface of the ring and (b) a valve control input. A gas valve configuration controller controls the valve control input of each of the valves.
摘要翻译： 用于处理诸如掩模或晶片的工件的等离子体反应器包括具有圆柱形侧壁，覆盖侧壁的天花板和支撑在侧壁的顶部边缘上并支撑天花板的环的真空室，所述环包括 外表面和内表面。 耦合到施加器的RF等离子体源功率施加器和RF源功率发生器提供等离子体源功率。 多个通道沿径向延伸穿过环从外表面到内表面并沿环的圆周间隔开。 工艺气体供应提供工艺气体。 在室外部的外部气体流动导管装置围绕室的圆周延伸并且联接到工艺气体供应。 在室外部的多个外部气体流量阀沿着导管间隔开的相应位置联接到外部导管，每个阀具有：（a）在外部连接到多个通道中的相应一个的受控气体输出端口 环的表面和（b）阀控制输入。 气阀配置控制器控制每个阀的阀门控制输入。
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34.发明申请Mask etch plasma reactor having an array of optical sensors viewing the workpiece backside and a tunable element controlled in response to the optical sensors 有权掩模蚀刻等离子体反应器具有观察工件背面的光学传感器阵列和响应于光学传感器控制的可调谐元件公开(公告)号：US20080102001A1
公开(公告)日：2008-05-01
申请号：US11589598
申请日：2006-10-30
申请人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
发明人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
IPC分类号： H01L21/3065
CPC分类号： H01J37/3211 , C23C16/45561 , C23C16/45563 , C23C16/4586 , C23C16/52 , H01J37/32449 , H01J37/32715 , H01J37/32935 , H01J37/32963 , H01J2237/334 , H01L21/67253 , H01L21/68785
摘要： A plasma reactor has an array of passages extending through its workpiece support pedestal from a bottom thereof that forms a two-dimensional array of openings in the support surface. The reactor further includes a plurality of optical fibers, each fiber extending through a respective one of the passages. Optical sensing apparatus is coupled to the output ends of the optical fibers and is responsive in the range of wavelengths. The reactor further includes a tunable element capable of changing a two-dimensional etch rate distribution across the surface of a workpiece supported on the pedestal, and a process controller connected to receive information from the optical sensing apparatus and to transmit control commands to the tunable element.
摘要翻译： 等离子体反应器具有从其底部延伸穿过其工件支撑基座的通道阵列，其在支撑表面中形成开口的二维阵列。 反应器还包括多根光纤，每根光纤延伸通过相应的一个通道。 光学传感装置耦合到光纤的输出端并且在波长范围内是响应的。 反应器还包括能够改变穿过支撑在基座上的工件的表面上的二维蚀刻速率分布的可调谐元件，以及连接到从光学感测装置接收信息并将控制命令发送到可调元件的过程控制器 。
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公开(公告)号：US06835275B1
公开(公告)日：2004-12-28
申请号：US09667362
申请日：2000-09-21
申请人： Michael N. Grimbergen , Xue-Yu Qian
发明人： Michael N. Grimbergen , Xue-Yu Qian
IPC分类号： H01H21306
CPC分类号： H01J37/32458 , H01J37/321 , H01J37/32623
摘要： A process chamber 35 capable of processing a substrate 30 and monitoring a process conducted on the substrate 30, comprises a support 45, a gas inlet, a gas energizer, an exhaust 85, and a wall 38 having a recess 145 that is sized to reduce the deposition of process residues therein. A process monitoring system 35 may be used to monitoring a process that may be conducted on a substrate 30 in the process chamber 25 through the recess 145 in the wall 38.
摘要翻译： 能够处理基板30并监测在基板30上进行的工艺的处理室35包括支撑件45，气体入口，气体增压器，排气器85和具有凹槽145的壁38，该凹槽的尺寸被设计成减小 其中过程残留物的沉积。 过程监控系统35可以用于监视可以通过壁38中的凹槽145在处理室25中的基板30上进行的过程。
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公开(公告)号：US6081334A
公开(公告)日：2000-06-27
申请号：US62520
申请日：1998-04-17
IPC分类号： G01B11/06 , H01L21/302 , H01L21/3065 , H01L21/3213 , H01L21/66 , G01B9/02
CPC分类号： H01L22/26 , G01B11/0683 , H01L21/32137
摘要： A substrate 20 in a process chamber 42 is processed at process conditions suitable for processing a layer 30 on the substrate 20, the process conditions comprising one or more of process gas composition and flow rates, power levels of process gas energizers, process gas pressure, and substrate temperature. The intensity of a reflected light beam 78 reflected from the layer 30 on the substrate 20 is measured over time, to determine a measured waveform pattern. The measured waveform pattern is compared to a pretetermined characteristic waveform pattern, and when the two waveform patterns are similar or substantially the same, the process conditions are changed to change a rate of processing or a process selectivity ratio of the layer 30 on the substrate 20 before the entire layer 30 is completely processed.
摘要翻译： 处理室42中的衬底20在适于处理衬底20上的层30的工艺条件下进行处理，工艺条件包括工艺气体组成和流速中的一种或多种，工艺气体激发器的功率水平，工艺气体压力， 和基板温度。 在时间上测量从衬底20上的层30反射的反射光束78的强度，以确定测量的波形图案。 将测量的波形图案与预定特征波形图案进行比较，并且当两个波形图案相似或基本相同时，改变处理条件以改变基板20上的层30的处理速率或处理选择比率 在整个层30被完全处理之前。
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