公开(公告)号：US07400401B2

公开(公告)日：2008-07-15

申请号：US11096049

申请日：2005-03-31

Applicant: Jang-Shiang Tsai ,  Peng-Fu Hsu ,  Baw-Ching Perng ,  Ju-Wang Hsu ,  Jyu-Horng Shieh ,  Yi-Nien Su ,  Hun-Jan Tao

Inventor： Jang-Shiang Tsai ,  Peng-Fu Hsu ,  Baw-Ching Perng ,  Ju-Wang Hsu ,  Jyu-Horng Shieh ,  Yi-Nien Su ,  Hun-Jan Tao

IPC: G01J4/00

CPC classification number: G01N21/211

Abstract: A method and system for determining the dielectric constant of a low-k dielectric film on a production substrate include measuring the electronic component of the dielectric constant using an ellipsometer, measuring the ionic component of the dielectric constant using an IR spectrometer, measuring the overall dielectric constant using a microwave spectrometer and deriving the dipolar component of the dielectric constant. The measurements and determination are non-contact and may be carried out on a production device that is further processed following the measurements.

Abstract translation: 用于确定制造基板上的低k电介质膜的介电常数的方法和系统包括使用椭偏仪测量介电常数的电子部件，使用IR光谱仪测量介电常数的离子分量，测量总电介质 使用微波光谱仪恒定并导出介电常数的偶极分量。 测量和确定是非接触的，并且可以在进行测量后进一步处理的生产设备上进行。

公开(公告)号：US20080050879A1

公开(公告)日：2008-02-28

申请号：US11466656

申请日：2006-08-23

Applicant: Cheng-Lung Hung ,  Peng-Fu Hsu ,  Jin Ying ,  Hun-Jan Tao

Inventor： Cheng-Lung Hung ,  Peng-Fu Hsu ,  Jin Ying ,  Hun-Jan Tao

IPC: H01L21/336

CPC classification number: H01L21/28185 ,  H01L21/28079 ,  H01L21/28194 ,  H01L29/4958 ,  H01L29/513 ,  H01L29/518 ,  H01L29/78

Abstract: A method of forming a metal-containing gate includes forming a high-k dielectric layer over a substrate. A process using an oxygen-containing solution is provided to process the high-k dielectric layer. A metal-containing layer is formed over the high-k dielectric layer. The high-k dielectric layer and metal-containing layer are patterned, thereby defining a gate structure.

Abstract translation: 形成含金属栅极的方法包括在衬底上形成高k电介质层。 提供使用含氧溶液的方法来处理高k电介质层。 在高k电介质层上形成含金属层。 图案化高k电介质层和含金属层，由此限定栅极结构。

公开(公告)号：US20080001237A1

公开(公告)日：2008-01-03

申请号：US11478476

申请日：2006-06-29

Applicant: Vincent S. Chang ,  Peng-Fu Hsu ,  Fong-Yu Yen ,  Yong-Tian Hou ,  Jin Ying ,  Hun-Jan Tao

Inventor： Vincent S. Chang ,  Peng-Fu Hsu ,  Fong-Yu Yen ,  Yong-Tian Hou ,  Jin Ying ,  Hun-Jan Tao

IPC: H01L29/78

CPC classification number: H01L29/513 ,  H01L21/28088 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/823437 ,  H01L21/823462 ,  H01L21/823475 ,  H01L21/823828 ,  H01L21/823857 ,  H01L21/823871 ,  H01L29/4966 ,  H01L29/518 ,  H01L29/7833

Abstract: Disclosed is a semiconductor device having a substrate, an interfacial layer formed on said substrate, a nitrogen-containing high dielectric constant (high-k) layer formed on said interfacial layer, and a metal electrode on said nitrogen-containing high-k layer. Also disclosed is a method of forming a transistor including forming on a substrate an interfacial layer comprising silicon and oxygen, depositing on the interfacial layer a high-k dielectric material, nitriding the high-k dielectric material, depositing a metal layer on the high-k dielectric material, and patterning the metal layer, the high-k dielectric material, and the interfacial layer to form a gate stack.

Abstract translation: 公开了一种半导体器件，其具有基板，在所述基板上形成的界面层，在所述界面层上形成的含氮高介电常数（高k）层和所述含氮高k层上的金属电极。 还公开了一种形成晶体管的方法，包括在衬底上形成包含硅和氧的界面层，在界面层上沉积高k电介质材料，氮化高k电介质材料，在高介电材料上沉积金属层， k电介质材料，并且图案化金属层，高k电介质材料和界面层以形成栅极堆叠。

公开(公告)号：US20060264150A1

公开(公告)日：2006-11-23

申请号：US11131266

申请日：2005-05-18

Applicant: Hung-Peng Fu

Inventor： Hung-Peng Fu

IPC: A63H17/00

CPC classification number: A63H17/002 ,  A63H29/22 ,  A63H31/00

Abstract: This invention is directed to a device of “a tutorial and wits-increment toy car”, mainly consists of a shell body with gear case at both sides, and within the gear case sets up multiple wheels used to act as mechanical powers transfer connection between the motor and the wheels, whereas at the top and back of the shell body fixed with multiple metal buttons and hexagonal buttons. According to the former structure, altering the size of wheel can adjust the wheel rotating speed, and makes the learners understand the basic electronic and mechanical control theory while playing the toy car, and makes the present invention become a best tool of cerebration training.

Abstract translation: 本发明涉及一种“教具和智能增益玩具车”的装置，主要由两侧具有齿轮箱的壳体构成，并且在齿轮箱内设置多个车轮，用于作为机械动力传递连接 电机和车轮，而在壳体的顶部和后部固定有多个金属按钮和六边形按钮。 根据前一种结构，改变车轮尺寸可以调节车轮转速，使学习者在玩玩具车时了解基本的电子和机械控制理论，使本发明成为脑训练的最佳工具。

公开(公告)号：US20060220653A1

公开(公告)日：2006-10-05

申请号：US11096049

申请日：2005-03-31

Applicant: Jang-Shiang Tsai ,  Peng-Fu Hsu ,  Baw-Ching Perng ,  Ju-Wang Hsu ,  Jyu-Horng Shieh ,  Yi-Nien Su ,  Hun-Jan Tao

Inventor： Jang-Shiang Tsai ,  Peng-Fu Hsu ,  Baw-Ching Perng ,  Ju-Wang Hsu ,  Jyu-Horng Shieh ,  Yi-Nien Su ,  Hun-Jan Tao

IPC: G01R31/00 ,  G01N21/00 ,  G01J4/00

CPC classification number: G01N21/211

Abstract: A method and system for determining the dielectric constant of a low-k dielectric film on a production substrate include measuring the electronic component of the dielectric constant using an ellipsometer, measuring the ionic component of the dielectric constant using an IR spectrometer, measuring the overall dielectric constant using a microwave spectrometer and deriving the dipolar component of the dielectric constant. The measurements and determination are non-contact and may be carried out on a production device that is further processed following the measurements.

Abstract translation: 用于确定制造基板上的低k电介质膜的介电常数的方法和系统包括使用椭偏仪测量介电常数的电子部件，使用IR光谱仪测量介电常数的离子分量，测量总电介质 使用微波光谱仪恒定并导出介电常数的偶极分量。 测量和确定是非接触的，并且可以在进行测量后进一步处理的生产设备上进行。

公开(公告)号：US20060073620A1

公开(公告)日：2006-04-06

申请号：US10949037

申请日：2004-09-24

Applicant: Jyu-Horng Shieh ,  Wen-Chih Chiou ,  Peng-Fu Hsu ,  Baw-Ching Perng ,  Hun-Jan Tao ,  Chin-Jen Chen

Inventor： Jyu-Horng Shieh ,  Wen-Chih Chiou ,  Peng-Fu Hsu ,  Baw-Ching Perng ,  Hun-Jan Tao ,  Chin-Jen Chen

IPC: H01L21/66

CPC classification number: H01L22/34

Abstract: Methods and structures for critical dimension or profile measurement are disclosed. The method provides a substrate having periodic openings therein. Material layers are formed in the openings, substantially planarizing a surface of the substrate. A scattering method is applied to the substrate with the material layers for critical dimension (CD) or profile measurement.

Abstract translation: 公开了关键尺寸或轮廓测量的方法和结构。 该方法提供其中具有周期性开口的基板。 在开口中形成材料层，基本上平坦化基底的表面。 将散射方法应用于具有临界尺寸（CD）或轮廓测量的材料层的基底。

公开(公告)号：US08853068B2

公开(公告)日：2014-10-07

申请号：US13329877

申请日：2011-12-19

Applicant: Peng-Fu Hsu ,  Kang-Cheng Lin ,  Kuo-Tai Huang

Inventor： Peng-Fu Hsu ,  Kang-Cheng Lin ,  Kuo-Tai Huang

IPC: H01L21/3205 ,  H01L21/4763 ,  H01L21/8238

CPC classification number: H01L27/092 ,  H01L21/823842 ,  H01L29/49 ,  H01L29/51

Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a semiconductor substrate having a first region and a second region, forming a high-k dielectric layer over the semiconductor substrate, forming a capping layer over the high-k dielectric layer in the first region, forming a first metal layer over capping layer in the first region and over the high-k dielectric in the second region, thereafter, forming a first gate stack in the first region and a second gate stack in the second region, protecting the first metal layer in the first gate stack while performing a treatment process on the first metal layer in the second gate stack, and forming a second metal layer over the first metal layer in the first gate stack and over the treated first metal layer in the second gate stack.

Abstract translation: 本公开提供了制造半导体器件的方法。 该方法包括提供具有第一区域和第二区域的半导体衬底，在半导体衬底上形成高k电介质层，在第一区域的高k电介质层上形成覆盖层，形成第一金属层 在第一区域中的覆盖层和第二区域中的高k电介质之上，然后在第一区域中形成第一栅极堆叠，在第二区域中形成第二栅极叠层，保护第一栅极叠层中的第一金属层，同时 对所述第二栅极堆叠中的所述第一金属层进行处理工艺，以及在所述第一栅极堆叠中的所述第一金属层上方以及所述第二栅极堆叠中经处理的第一金属层之上形成第二金属层。

公开(公告)号：US20120081860A1

公开(公告)日：2012-04-05

申请号：US13129510

申请日：2010-10-04

Applicant: Itzhak Pomerantz ,  Shiv Kumar ,  Robert Miller ,  Chin-Tien Chiu ,  Peng Fu ,  Cheeman Yu ,  Hem Takiar ,  Chih Chiang Tung ,  Kaiyou Qian

Inventor： Itzhak Pomerantz ,  Shiv Kumar ,  Robert Miller ,  Chin-Tien Chiu ,  Peng Fu ,  Cheeman Yu ,  Hem Takiar ,  Chih Chiang Tung ,  Kaiyou Qian

IPC: H05K1/14 ,  B32B3/10 ,  B32B3/02 ,  H05K7/00 ,  B32B3/30

CPC classification number: H05K5/0252 ,  G06K19/07 ,  Y10T428/239 ,  Y10T428/24479 ,  Y10T428/2457 ,  Y10T428/24802

Abstract: A memory device is disclosed including at least one surface pre-treated to roughen the surface for better adhesion of ink on the surface. The surface of the memory device may be pre-treated by scoring lines in the surface with a laser or by forming discrete deformations with a particle blaster. The surface may also be roughened by providing a roughened pattern on a mold plate during an encapsulation process. In further examples, the surface may be chemically pre-treated to roughen the surface and/or increase the adhesion energy of the surface.

Abstract translation: 公开了一种记录装置，其包括至少一个预处理表面的表面，以便更好地粘附在表面上的墨。 存储器件的表面可以通过用激光在表面上刻划线或者通过用粒子喷射器形成离散的变形来预处理。 在封装过程中，通过在模板上提供粗糙图案也可以使表面粗糙化。 在另外的实施例中，表面可以被化学预处理以使表面粗糙化和/或增加表面的粘附能。

公开(公告)号：US08105931B2

公开(公告)日：2012-01-31

申请号：US12424739

申请日：2009-04-16

Applicant: Peng-Fu Hsu ,  Kang-Cheng Lin ,  Kuo-Tai Huang

Inventor： Peng-Fu Hsu ,  Kang-Cheng Lin ,  Kuo-Tai Huang

IPC: H01L21/3205 ,  H01L21/4763

CPC classification number: H01L27/092 ,  H01L21/823842 ,  H01L29/49 ,  H01L29/51

Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a semiconductor substrate having a first region and a second region, forming a high-k dielectric layer over the semiconductor substrate, forming a capping layer over the high-k dielectric layer in the first region, forming a first metal layer over capping layer in the first region and over the high-k dielectric in the second region, thereafter, forming a first gate stack in the first region and a second gate stack in the second region, protecting the first metal layer in the first gate stack while performing a treatment process on the first metal layer in the second gate stack, and forming a second metal layer over the first metal layer in the first gate stack and over the treated first metal layer in the second gate stack.

Abstract translation: 本公开提供了制造半导体器件的方法。 该方法包括提供具有第一区域和第二区域的半导体衬底，在半导体衬底上形成高k电介质层，在第一区域的高k电介质层上形成覆盖层，形成第一金属层 在第一区域中的覆盖层和第二区域中的高k电介质之上，然后在第一区域中形成第一栅极堆叠，在第二区域中形成第二栅极叠层，保护第一栅极叠层中的第一金属层，同时 对所述第二栅极堆叠中的所述第一金属层进行处理工艺，以及在所述第一栅极堆叠中的所述第一金属层上方以及所述第二栅极堆叠中经处理的第一金属层之上形成第二金属层。

公开(公告)号：US07989321B2

公开(公告)日：2011-08-02

申请号：US12257165

申请日：2008-10-23

Applicant: Chien-Hao Chen ,  Yong-Tian Hou ,  Peng-Fu Hsu ,  Kuo-Tai Huang ,  Donald Y. Chao ,  Cheng-Lung Hung

Inventor： Chien-Hao Chen ,  Yong-Tian Hou ,  Peng-Fu Hsu ,  Kuo-Tai Huang ,  Donald Y. Chao ,  Cheng-Lung Hung

IPC: H01L21/322 ,  H01L21/32

CPC classification number: H01L21/28518 ,  H01L21/28185 ,  H01L21/3221 ,  H01L29/49 ,  H01L29/51 ,  H01L29/513

Abstract: A method is provided that allows for maintaining a desired equivalent oxide thickness (EOT) by reducing the thickness of an interfacial layer in a gate structure. An interfacial layer is formed on a substrate, a gate dielectric layer such as, a high-k gate dielectric, is formed on the interfacial layer. A gettering layer is formed on the substrate overlying the interfacial layer. The gettering layer may function to getter oxygen from the interfacial layer such that the interfacial layer thickness is decreased and/or restricted from growth.

Abstract translation: 提供了一种方法，其允许通过减小栅极结构中的界面层的厚度来维持期望的等效氧化物厚度（EOT）。 在基板上形成界面层，在界面层上形成栅极电介质层，例如高k栅极电介质。 在覆盖界面层的基板上形成吸气层。 吸气层可用于从界面层吸收氧气，使得界面层厚度减少和/或限制生长。