摘要:
A moveable skid is provided to sense the height of a pallet fed to a raisable and lowerable platform. The skid determines the height of the pallet before it is fed to a raisable and lowerable platform of a sheet stacking apparatus so that the position of the pallet below an intermediate stacking platform can be determined during the pallet change. This prevents adverse effects by nondetrimental projections above the surface of the pallet and prevents an excessive drop of the intermediate stack as it is transferred to the pallet.
摘要:
An apparatus for continuously casting metal for obtaining a substantially flat casting includes a vessel having a bottom opening defined by side walls and by a rear wall and a tiltable front wall, the rear and front walls ending at different levels so that the bottom opening has a horizontal as well as a vertical component; a planar metal, endless belt is disposed underneath the opening and defines a casting gap together with the front wall, the more downwardly extending rear wall in conjunction with that casting gap deflects casting material from a down flow directly into the horizontal; a meniscus seals the rear wall against the belt; the belt is spray cooled from below.
摘要:
Apparatus for controlling the oscillations of a mold for continuous casting of metal, the mold being mounted on a table which is connected, in turn, to three spaced apart drives and three load relief springs; three displacement path transducers track each of the drives; a source of reference signals provides reference signals representing the desired oscillation, as to contour, amplitude and rate; actual and reference signals are compared by and in stages which provide correction signals for the drives.
摘要:
Circuit arrangement for reducing recovery time of a thyristor formed with a semiconductor body having at least one emitter zone contacted by an emitter electrode and having at least one auxiliary emitter zone and a base zone contacted by an auxiliary emitter electrode, includes a shunt between the emitter zone and the base zone, a capacitor disposed in a line mutually connecting the emitter electrode and the auxiliary emitter electrode, the emitter electrode being the cathode and being disposed on the surface of the semiconductor body and electrically connected to the emitter zone, the shunt between the emitter zone and the base zone being formed through the capacitor, a series connection of a resistance and a diode being connected in parallel with the capacitor, the diode having a lower threshold voltage than that of an imputed diode formed by the cathode-sided emitter zone and the base zone of the thyristor, the diode of the series connection being poled with respect to the cathodic emitter electrode in the same sense as is the imputed diode of the thyristor.
摘要:
Circuit arrangement for reducing recovery time of a thyristor having a control electrode, a main emitter electrode and at least one auxiliary emitter electrode disposed between the main emitter electrode and the control electrode, includes two current sources, one of which delivers a pulse of one polarity and is connected to and between the control electrode and the auxiliary emitter electrode, and the other of which delivers a pulse of the other polarity and is connected to and between the auxiliary emitter electrode and the main emitter electrode.
摘要:
In the electrochemical fluorination of an alkanesulfonyl halide wherein an electric current is passed through a cell containing said alkanesulfonyl halide dissolved in hydrofluoric acid to produce a perfluorinated alkanesulfonyl fluoride, the improvement which comprises including in said cell an unsaturated cyclic sulfone.
摘要:
A laminated glazing comprises two plies of glass having an interlayer structure laminated therebetween. The interlayer structure comprises a first sheet of an interlayer material framing a suspended particle device film incorporated therein. The interlayer material is chosen to minimise the migration of the components of the interlayer material into the suspended particle device film. Preferably, the interlayer material does not contain plasticizers, or contains a plasticizer which does not diffuse into the suspended particle device film structure.
摘要:
A stacker for sheets, e.g. of cardboard or paper, is equipped with a device for inserting Marker strips or tabs within the stack to indicate predetermined numbers of sheets therein, e.g. for identification of reams. The inserter has a rigid channel Mounted on a frame moveable on a traverse transverse to the direction of sheet feed and the channel at its outlet is rigidly connected to a tongue having a substantially horizontal underside and moved with the outlet of the channel in a rectangular pattern with only vertical and horizontal path segments so that the tongue can be withdrawn from the stack without changing its orientation horizontally after a strip has been inserted into the gap formed by the tongue in the stack and alongside the tongue.
摘要:
To determine and/or automatically control the degree of orientation of tubular films which have been made in a film-blowing plant including an extruder having a film-blowing head and apparatus for internal cooling and also including flattening and take-off apparatus, the rate of exchange of the air for internal cooling, the speed of the extruder, the temperature of the plastic composition being extruded and/or the take-off velocity are controlled. To ensure that the degree of orientation can be determined and/or automatically controlled in a simple manner and without an occurrence of trouble, that shape of the flaring portion of the bubble which corresponds to the desired degree of orientation is determined and/or adjusted and is recorded as the desired shape of the bubble. The actual shape of the flaring portion of the bubble is detected and compared with and adapted to the desired shape.
摘要:
A process for making a thyristor device protected against breakover firing is to generate in the semiconductor body (1) of the thyristor an area (A) which has a lower breakdown voltage than the rest of the semiconductor body. This area is protected by suitable measures when the thyristor is overloaded. The invention features a process in which the area (A) of the semiconductor body (1) is irradiated locally with protons, with the proton energy being measured in such a manner that the maximum of the defect density and doping generated by the proton irradiation lies between the PN junction (15) of the first base region (9) and the second base region (10) and the half thickness of the second base region (10), and the semiconductor body (1) is subsequently heat-treated.