公开(公告)号：US06930501B2

公开(公告)日：2005-08-16

申请号：US10866863

申请日：2004-06-14

申请人： Silke Bargstädt-Franke ,  Kai Esmark ,  Harald Gossner ,  Philipp Riess ,  Wolfgang Stadler ,  Martin Streibl ,  Martin Wendel

发明人： Silke Bargstädt-Franke ,  Kai Esmark ,  Harald Gossner ,  Philipp Riess ,  Wolfgang Stadler ,  Martin Streibl ,  Martin Wendel

IPC分类号： H01L23/544 ,  H01L23/60 ,  G01R31/26

CPC分类号： H01L22/34 ,  H01L23/60 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A method for determining an ESD/latch-up strength of an integrated circuit includes producing an integrated circuit and a test structure using the same fabrication process. Electrical parameters at the test structure are measured and characteristic values associated with the integrated circuit are derived from the measured parameter values, wherein the characteristic values characterize an ESD or latch-up characteristic curve associated with the integrated circuit. The method further includes testing whether the characteristic values in each case lie within a predetermined range assigned to them, wherein the ranges are chosen such that a desired ESD/latch-up strength is present if the characteristic values in each case lie within their range.

公开(公告)号：US08710590B2

公开(公告)日：2014-04-29

申请号：US11454996

申请日：2006-06-16

申请人： Philipp Riess ,  Henning Feick ,  Martin Wendel

发明人： Philipp Riess ,  Henning Feick ,  Martin Wendel

IPC分类号： H01L23/62

CPC分类号： H01L29/1083 ,  H01L27/0266 ,  H01L29/41758 ,  H01L29/6659 ,  H01L29/78

摘要： In a method for producing an electronic component, a substrate is doped by introducing doping atoms. In the doped substrate, at least one connection region of the electronic component is formed by doping with doping atoms. Furthermore, at least one additional doped region is formed at least below the at least one connection region by doping with doping atoms. Furthermore, at least one well region is formed in the substrate by doping with doping atoms in such a way that the well region doping is blocked at least below the at least one additional doped region.

摘要翻译： 在制造电子元件的方法中，通过引入掺杂原子来掺杂衬底。 在掺杂衬底中，通过掺杂掺杂原子形成电子部件的至少一个连接区域。 此外，通过掺杂掺杂原子至少在至少一个连接区域的下方形成至少一个附加的掺杂区域。 此外，通过以这样的方式掺杂掺杂原子在衬底中形成至少一个阱区，使得阱区掺杂至少在至少一个附加掺杂区下方被阻挡。

公开(公告)号：US08394696B2

公开(公告)日：2013-03-12

申请号：US12971520

申请日：2010-12-17

申请人： Peter Baumgartner ,  Philipp Riess ,  Thomas Benetik

发明人： Peter Baumgartner ,  Philipp Riess ,  Thomas Benetik

IPC分类号： H01L51/05

CPC分类号： H01L27/0688 ,  H01L23/5223 ,  H01L27/0805 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a capacitance, the numerical value of which is relevant for a device function. The capacitance is formed from a parallel connection of at least a first and a second capacitor element, wherein the first and second capacitor elements are formed in respective manufacturing steps that exhibit uncorrelated process fluctuations.

摘要翻译： 半导体器件包括其数值与器件功能相关的电容。 电容由至少第一和第二电容器元件的并联连接形成，其中第一和第二电容器元件形成在显示不相关的工艺波动的各个制造步骤中。

公开(公告)号：US20100295154A1

公开(公告)日：2010-11-25

申请号：US12471435

申请日：2009-05-25

申请人： Philipp RIESS

发明人： Philipp RIESS

IPC分类号： H01L29/92

CPC分类号： H01L23/5223 ,  H01L28/60 ,  H01L28/86 ,  H01L28/90 ,  H01L2924/0002 ,  H01L2924/00

摘要： One or more embodiments are related to a semiconductor chip comprising a capacitor, the capacitor comprising: a plurality of conductive plates, each of the plates including a first conductive strip and a second conductive strip disposed over or under the first conductive strip, the second conductive strip of each plate being substantially parallel to the first conductive strip of the same plate, the second conductive strip of each plate electrically coupled to the first conductive strip of the plate through at least one conductive via, the second conductive strips of each group of at least two consecutive plates being spaced apart from each other in a direction along the length of the plates.

摘要翻译： 一个或多个实施例涉及包括电容器的半导体芯片，所述电容器包括：多个导电板，每个所述板包括设置在所述第一导电条上或之下的第一导电条和第二导电条，所述第二导电 每个板的条带基本上平行于同一板的第一导电条，每个板的第二导电条通过至少一个导电通孔电耦合到板的第一导电条，每组的第二导电条 至少两个连续的板沿着板的长度方向彼此间隔开。

公开(公告)号：US20090014832A1

公开(公告)日：2009-01-15

申请号：US11775086

申请日：2007-07-09

申请人： Peter Baumgartner ,  Philipp Riess ,  Thomas Benetik

发明人： Peter Baumgartner ,  Philipp Riess ,  Thomas Benetik

IPC分类号： H01L29/94 ,  H01L29/00

CPC分类号： H01L27/0688 ,  H01L23/5223 ,  H01L27/0805 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a capacitance, the numerical value of which is relevant for a device function. The capacitance is formed from a parallel connection of at least a first and a second capacitor element, wherein the first and second capacitor elements are formed in respective manufacturing steps that exhibit uncorrelated process fluctuations.

摘要翻译： 半导体器件包括其数值与器件功能相关的电容。 电容由至少第一和第二电容器元件的并联连接形成，其中第一和第二电容器元件形成在显示不相关的工艺波动的各个制造步骤中。

公开(公告)号：US07009404B2

公开(公告)日：2006-03-07

申请号：US10160740

申请日：2002-05-31

申请人： Martin Wendel ,  Richard Owen ,  Harald Gossner ,  Wolfgang Stadler ,  Philipp Riess ,  Martin Streibl ,  Kai Esmark

发明人： Martin Wendel ,  Richard Owen ,  Harald Gossner ,  Wolfgang Stadler ,  Philipp Riess ,  Martin Streibl ,  Kai Esmark

IPC分类号： G01R31/08 ,  G01R27/08

CPC分类号： G01R31/002 ,  G01R31/129

摘要： To test the ESD resistance of a semiconductor component, for example of a NOS transistor, which can be used as a PSD protective element in a chip, a direct current characteristic of the semiconductor component is monitored and the ESD resistance of the respective semiconductor component is inferred depending on this. In particular, the direct current failure threshold of the semiconductor component at which an increased leakage current occurs in the non-conducting direction of the semiconductor component can be monitored in operation of the semiconductor component using an applied direct current and the ESD resistance of the semiconductor component inferred depending on a change in this direct current failure threshold.

摘要翻译： 为了测试可用作芯片中的PSD保护元件的例如可用作PSD保护元件的NOS晶体管的半导体部件的ESD电阻，监视半导体部件的直流特性，并且各半导体部件的ESD电阻为 据此推断。 特别地，可以在使用所施加的直流电流和半导体的ESD电阻的半导体组件的操作中监视在半导体组件的非导通方向上发生增加的漏电流的半导体组件的直流故障阈值 根据该直流故障阈值的变化推断分量。