-
公开(公告)号:US20210257908A1
公开(公告)日:2021-08-19
申请号:US16789589
申请日:2020-02-13
Applicant: Universite de Lille , Centre National De La Recherche Scientifique , ISEN Yncrea Hauts-de-France , STMicroelectronics SA
Inventor: Angel de Dios GONZALEZ SANTOS , Andreas KAISER , Antoine FRAPPE , Philippe CATHELIN , Benoit LARRAS
Abstract: A continuous time digital signal processing (CT DSP) token includes a first signal indicating a change has occurred and a second signal indicating a direction of the change. An amplitude generation circuit operates to generate an amplitude value x in response to the token. A power estimation circuit processes the amplitude value x to generate a digital power signal in accordance with the formula: x2±2x+1.
-
公开(公告)号:US11063429B2
公开(公告)日:2021-07-13
申请号:US15951806
申请日:2018-04-12
Inventor: Radhakrishnan Sithanandam , Divya Agarwal , Ghislain Troussier , Jean Jimenez , Malathi Kar
Abstract: Electrostatic discharge (ESD) protection is provided in using a supply clamp circuit using an ESD event actuated MOSFET device. Triggering of the MOSFET device is made at both the gate terminal and the substrate (back gate) terminal. Additionally, the MOSFET device can be formed of cascoded MOSFETs.
-
公开(公告)号:US11005490B2
公开(公告)日:2021-05-11
申请号:US16918940
申请日:2020-07-01
Applicant: STMicroelectronics SA , STMicroelectronics (Alps) SAS
Inventor: Stéphane Le Tual , David Duperray , Jean-Pierre Blanc
Abstract: A sampling circuit includes a metal oxide semiconductor (MOS) transistor that includes a third metallization receiving a reference voltage between a first metallization coupled to a source region of the transistor and a second metallization coupled to a drain region of the transistor.
-
公开(公告)号:US20210126672A1
公开(公告)日:2021-04-29
申请号:US17080431
申请日:2020-10-26
Applicant: STMicroelectronics SA
Inventor: Marc Houdebine , Laurent Jean Garcia
Abstract: An embodiment near-field communication device using active load modulation, in card emulation mode and intended to communicate with a reader, comprises a digital phase-locked loop configured to generate a carrier signal, having an oscillator configured to generate the carrier signal in a manner controlled by an analog control signal, a feedback circuit configured to generate a digital control signal, a digital-to-analog converter configured to convert the digital control signal into the analog control signal, and an integrator assembly configured to integrate the analog control signal.
-
公开(公告)号:US10972097B2
公开(公告)日:2021-04-06
申请号:US16643383
申请日:2017-08-29
Applicant: STMicroelectronics SA
Inventor: Hanae Zegmout , Denis Pache , Stephane Le Tual , Jean-François Roux , Jean-Louis Coutaz
IPC: H03K17/78 , H01L31/08 , H01L31/028 , H01L31/0352 , H03M1/12
Abstract: In accordance with an embodiment of the present invention, an optical switch includes a photoconductor body including a first edge and an opposite second edge, a first end and an opposite second end. The first edge is configured to receive an electrical input signal and the second edge is configured to deliver an electrical output signal. The photoconductor body is configured to have an electrically ON state that is activated by an optical signal and an electrically OFF state that is activated by an absence of the optical signal. A direction from the first end to the second end defines a longitudinal direction. The direction from the first edge to the second edge defines a first direction that is orthogonal to the longitudinal direction. A first dimension between the first edge and the second edge along the first direction decreases from the first end to the second end.
-
公开(公告)号:US20210020660A1
公开(公告)日:2021-01-21
申请号:US16927510
申请日:2020-07-13
Applicant: STMicroelectronics SA
Inventor: Thomas BEDECARRATS , Philippe GALY
IPC: H01L27/12
Abstract: A silicon-on-insulator semiconductor substrate supports rows extending in a direction. Each row includes complementary MOS transistors and associated contact regions allowing back gate of the complementary MOS transistors to be biased. All transistors and associated contact regions of a given row are mutually isolated by a first trench isolation. Each row is bordered on opposed edges extending parallel to said direction by corresponding second trench isolations that are shallower than the first trench isolation.
-
公开(公告)号:US20210006256A1
公开(公告)日:2021-01-07
申请号:US16918940
申请日:2020-07-01
Applicant: STMicroelectronics SA , STMicroelectronics (Alps) SAS
Inventor: Stéphane Le Tual , David Duperray , Jean-Pierre Blanc
Abstract: A sampling circuit includes a metal oxide semiconductor (MOS) transistor that includes a third metallization receiving a reference voltage between a first metallization coupled to a source region of the transistor and a second metallization coupled to a drain region of the transistor.
-
公开(公告)号:US20200373965A1
公开(公告)日:2020-11-26
申请号:US16878084
申请日:2020-05-19
Applicant: STMicroelectronics SA
Inventor: Mohammed TMIMI , Philippe GALY
Abstract: Binary data is processed through a differential pre-encoder, which includes a simple modulo-2 addition. This step is used to cancel the propagation error that can be introduced by duo-binary modulation and to simplify demodulation. Next the duo-binary encoder introduces controlled Inter Symbol Interference between a previously sent bit and a present bit to compress the spectral density closer to the DC. Next a 60-GHz carrier is modulated and transmitted over differential transmission lines.
-
公开(公告)号:US20200350653A1
公开(公告)日:2020-11-05
申请号:US16764947
申请日:2017-11-21
Applicant: STMicroelectronics SA
Inventor: Vincent KNOPIK , Jeremie FOREST , Eric KERHERVE
IPC: H01P5/22 , H04B17/21 , H01L23/522 , H03H11/16
Abstract: A hybrid coupler operating in a power divider mode includes two inputs, two outputs, a capacitive module coupled between the inputs and the outputs or on each input and each output. The capacitive module has an adjustable capacitive value making it possible to adjust the central frequency. A calibration method includes: delivering a first reference signal having a first reference frequency on the first input of the hybrid coupler, measuring the peak value of a first signal delivered to the first output of the coupler and measuring the peak value of a second signal delivered to the second output of the coupler. The two peak values are compared and an adjustment of the capacitive value of the capacitive module is made until an equality of the peak values is obtained to within a tolerance.
-
公开(公告)号:US10804885B2
公开(公告)日:2020-10-13
申请号:US16654261
申请日:2019-10-16
Applicant: STMicroelectronics SA
Inventor: Sylvain Engels , Alain Aurand , Etienne Maurin
IPC: H03K3/00 , H03K3/356 , H01L27/02 , H03K3/3562 , H03K19/0948 , H01L23/528
Abstract: A standard cell layout for a data storage circuit includes a latch and an initialization circuit. Metallization levels over the standard cell layout support circuit interconnections. At least one metallization level is provided for metal programming of an initialization configuration of the data storage circuit. The at least one metallization level may have: a first wiring layout for interconnecting the initialization circuit to the latch for configuration programming of the data storage circuit as an initialization in reset device (assertion of an initialization signal causing the data storage circuit data output to be reset), or a second wiring layout for interconnecting the initialization circuit to the latch for configuration programming of the data storage circuit as an initialization in set device (assertion of the initialization signal causing the data storage circuit data output to be set).
-
-
-
-
-
-
-
-
-