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    Non-volatile memory device having a bit line contact pad and method for manufacturing the same
    31.
    发明授权
    Non-volatile memory device having a bit line contact pad and method for manufacturing the same 有权

    公开(公告)号：US06593190B2

    公开(公告)日：2003-07-15

    申请号：US10072577

    申请日：2002-02-06

    Applicant: Seung-Min Lee ,  Byung-Hong Chung

    Inventor： Seung-Min Lee ,  Byung-Hong Chung

    IPC: H01L21336

    CPC classification number: H01L21/76895 ,  H01L27/115 ,  H01L27/11521

    Abstract: A non-volatile memory device and a method for manufacturing the same are disclosed. A non-volatile memory device comprises a semiconductor substrate having active areas which extend in a first direction and are repeatedly arranged in a second direction orthogonal to the first direction, a plurality of word lines formed on the semiconductor substrate which extending in the second direction while being repeatedly arranged in the first direction, string select lines adjacent to a first word line and extending in the second direction, ground select lines adjacent to a last word line and extending in the second direction, a first insulating interlayer formed on the resultant structure and comprising a first opening exposing the active area between the ground select lines and a second opening exposing the active area between the string select lines, a bit line contact pad formed in the second opening. A sidewall of the contact pad comprises a negative slope in the first direction and a positive slope in the second direction. A hard mask layer pattern, having the same pattern size as the active area, is formed on the contact pad and the first insulating interlayer. A second insulating interlayer is formed on the hard mask layer pattern and the first insulating interlayer. The second insulating interlayer has a bit line contact hole on the contact pad and thus the process margin is sufficiently achieved.

    METHOD FOR MANUFACTURING A MOLYBDENUM SPUTTERING TARGET FOR BACK ELECTRODE OF CIGS SOLAR CELL
    34.
    发明申请
    METHOD FOR MANUFACTURING A MOLYBDENUM SPUTTERING TARGET FOR BACK ELECTRODE OF CIGS SOLAR CELL 有权
    用于制造CIGS太阳能电池背面电极的多晶硅溅射靶的方法

    公开(公告)号：US20130336831A1

    公开(公告)日：2013-12-19

    申请号：US14002666

    申请日：2012-03-07

    Applicant: Ik Hyun Oh ,  Hyun Kuk Park ,  Seung Min Lee ,  Jun Mo Yang

    Inventor： Ik Hyun Oh ,  Hyun Kuk Park ,  Seung Min Lee ,  Jun Mo Yang

    IPC: C23C14/34

    CPC classification number: C23C14/3414 ,  B22F3/1017 ,  B22F3/1028 ,  B22F3/105 ,  B22F3/14 ,  B22F2003/1051 ,  B22F2999/00 ,  C22C1/045 ,  H01L31/022425 ,  H01L31/03923 ,  Y02E10/541 ,  Y02P70/521 ,  B22F3/1003 ,  B22F2201/20 ,  B22F2203/11

    Abstract: A method for manufacturing a molybdenum sputtering target for a back electrode of a CIGS solar cell is provided to minimize thermal activating reaction by employing an electric discharge plasma sintering process. The method for manufacturing a molybdenum sputtering target for a back electrode of a CIGS solar cell comprises the steps of: charging molybdenum powder in a mold of graphite material, mounting the mold in a chamber of an electric discharge sintering apparatus, making a vacuum in the chamber, forming the molybdenum powder to the final target temperature while maintaining constant pressure on the molybdenum powder, heating the molybdenum powder in a predetermined heating pattern when reaching the final target temperature, maintaining the final target temperature for 1 to 10 minutes, and cooling the inside of the chamber while maintaining a constant pressure.

    Abstract translation: 提供了一种用于制造CIGS太阳能电池背面电极的钼溅射靶的方法，以通过采用放电等离子体烧结工艺来最小化热激活反应。 用于制造CIGS太阳能电池背面电极用钼溅射靶的方法包括以下步骤：在石墨材料的模具中装入钼粉末，将模具安装在放电烧结装置的腔室中，在 在钼粉末保持恒定压力的同时将钼粉末形成最终目标温度，当达到最终目标温度时以预定加热模式加热钼粉末，将最终目标温度保持1至10分钟，并将 在室内，同时保持恒定的压力。

    Method and apparatus for distinguishing obscene video using visual feature
    36.
    发明授权
    Method and apparatus for distinguishing obscene video using visual feature 有权
    使用视觉特征区分淫秽视频的方法和装置

    公开(公告)号：US07773809B2

    公开(公告)日：2010-08-10

    申请号：US11442565

    申请日：2006-05-26

    Applicant: Seung Min Lee ,  Taek Yong Nam ,  Jong Soo Jang ,  Ho Gyun Lee

    Inventor： Seung Min Lee ,  Taek Yong Nam ,  Jong Soo Jang ,  Ho Gyun Lee

    IPC: G06K9/00 ,  G06K9/46 ,  G06K9/62 ,  G10L15/06 ,  G04H60/32

    CPC classification number: G06K9/00711 ,  G06K9/4652

    Abstract: A method and apparatus for generating discriminant functions for distinguishing obscene videos by using visual features of video data, and a method and apparatus for determining whether videos are obscene by using the generated discriminant functions, are provided. The method of generating discriminant functions includes: creating a first frame set by extracting a predetermined number of frames for each video data unit from a group of video data classified as obscene or non-obscene, and creating a second frame set by selecting the frames; generating a frame based discriminant function by extracting visual features of frames of the second frame set, and then generating a first discriminant value by determining whether each frame of the first frame set contains obscene video data; generating a group frame based discriminant function by extracting visual features of a group of frames of the first frame set, and then generating a second discriminant value by determining whether the frames of the group contain obscene video data; and generating a synthetic discriminant function by using the first and second discriminant values as a representative value of the video data. Accordingly, obscene video data stored in a computer system can be automatically and accurately distinguished.

    Abstract translation: 提供一种用于通过使用视频数据的视觉特征来产生用于区分淫秽视频的判别函数的方法和装置，以及用于通过使用所生成的判别函数来确定视频是淫秽的方法和装置。 产生判别函数的方法包括：通过从分类为淫秽或非淫秽的一组视频数据中提取每个视频数据单元的预定数量的帧来创建第一帧集合，并通过选择帧来创建第二帧集合; 通过提取第二帧集合的帧的视觉特征，生成基于帧的判别函数，然后通过确定第一帧集合的每个帧是否包含淫秽视频数据来生成第一判别值; 通过提取第一帧集合的帧组的视觉特征，生成基于组帧的判别函数，然后通过确定该组的帧是否包含淫秽视频数据来生成第二判别式值; 以及通过使用第一和第二判别值作为视频数据的代表值来产生合成判别函数。 因此，可以自动且准确地区分存储在计算机系统中的淫秽视频数据。

    Method for manufacturing TFT LCD device
    37.
    发明授权
    Method for manufacturing TFT LCD device 有权
    TFT液晶显示装置的制造方法

    公开(公告)号：US06335148B2

    公开(公告)日：2002-01-01

    申请号：US09740497

    申请日：2000-12-19

    Applicant: Seok Lyul Lee ,  Jung Mok Jun ,  Seung Min Lee

    Inventor： Seok Lyul Lee ,  Jung Mok Jun ,  Seung Min Lee

    IPC: G03F700

    CPC classification number: G02F1/1368 ,  G02F1/134363

    Abstract: Disclosed is a method for manufacturing a thin film transistor LCD device, in which a counter and a gate bus line are made in a single photolithography process, and a channel of a thin film transistor, a source electrode, a drain electrode, ohmic contacts for the source and drain electrodes are made in a single photolithography process. The method involves the steps of forming a first photoresist layer on said deposited metal layer for the gate bus line; exposing said first photoresist layer to a scanning light, so that the portion of the first photoresist layer disposed over a counter electrode region for forming said counter electrode may be partially lightened; patterning said first photoresist layer so that an area of the metal layer for the gate bus line lying under the partially lightened portion of the first photoresist layer may not be exposed; patterning said metal layer for the gate bus line by using said patterned first photoresist layer as a barrier layer so that said counter electrode region and a gate bus line region may be defined; patterning said transparent conductive layer for the counter electrode by using said patterned metal layer as a barrier layer so that said counter electrode may be formed; patterning said metal layer for the gate bus line by using said patterned first photoresist layer as a barrier layer so that said gate bus line may be formed.

    Abstract translation: 公开了一种用于制造薄膜晶体管LCD器件的方法，其中在单个光刻工艺中制造计数器和栅极总线，以及薄膜晶体管，源极，漏极，欧姆接触的通道 源电极和漏电极由单个光刻工艺制成。 该方法包括在用于栅极总线的所述沉积金属层上形成第一光致抗蚀剂层的步骤; 将所述第一光致抗蚀剂层暴露于扫描光，使得设置在用于形成所述对电极的对电极区域上的第一光致抗蚀剂层的部分可以被部分减轻; 图案化所述第一光致抗蚀剂层，使得位于第一光致抗蚀剂层的部分减轻部分下方的栅极总线的金属层的面积可能不暴露; 通过使用所述图案化的第一光致抗蚀剂层作为阻挡层来图案化用于栅极总线的所述金属层，使得可以限定所述对电极区域和栅极总线区域; 通过使用所述图案化金属层作为阻挡层来图案化用于对电极的透明导电层，从而可形成所述对电极; 通过使用所述图案化的第一光致抗蚀剂层作为阻挡层来图案化用于栅极总线的所述金属层，使得可以形成所述栅极总线。

    Network correction security system and method
    40.
    再颁专利
    Network correction security system and method 有权
    网络校正安全系统及方法

    公开(公告)号：USRE45381E1

    公开(公告)日：2015-02-17

    申请号：US12954373

    申请日：2010-11-24

    Applicant: Seung-Min Lee ,  Taek-Yong Nam ,  Sung-Won Sohn ,  Ye Seok Cho

    Inventor： Seung-Min Lee ,  Taek-Yong Nam ,  Sung-Won Sohn ,  Chee-Hang Park

    IPC: G06F9/00

    CPC classification number: H04L63/1458

    Abstract: A network correction security system. The network correction security system connected between a network node and a security-related external system, detects attacks on the network node, corrects weak parts of the performance of the network node, collects information for improving the security performance of the network node from a security-related external system, analyzes the information, monitors principal resources of the network node to detect a fault, and removes the fault according to a measure corresponding to a grade of the fault. The network correction security system carries out a recovery process when the fault has not been corrected, and recovers the functions of the network node according to a recovery mechanism when the fault has not been removed after the recovery process.

    Abstract translation: 网络校正安全系统。 连接在网络节点和安全相关的外部系统之间的网络校正安全系统，检测对网络节点的攻击，纠正网络节点性能的弱点，从安全性中收集提高网络节点安全性能的信息 相关的外部系统，分析信息，监控网络节点的主要资源以检测故障，并根据与故障等级对应的措施消除故障。 网络校正安全系统在故障未得到纠正的情况下执行恢复过程，并且在恢复过程中还没有删除故障时，根据恢复机制恢复网络节点的功能。

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