公开(公告)号：US07652727B2

公开(公告)日：2010-01-26

申请号：US11643876

申请日：2006-12-22

申请人： Seok-Woo Lee ,  Young-Joo Kim

发明人： Seok-Woo Lee ,  Young-Joo Kim

IPC分类号： G02F1/1343 ,  G02F1/136

CPC分类号： G02F1/136213 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2001/13685 ,  G02F2202/104

摘要： A liquid crystal display and a method for fabricating the same are disclosed. The method for fabricating a liquid crystal display includes preparing an insulating substrate defining a pixel portion divided into a thin film transistor region and a storage region, sequentially forming a polycrystalline silicon film and a storage electrode film on an entire surface of the substrate, selectively patterning the storage electrode film and the polycrystalline silicon film to form a pixel pattern that covers the pixel portion, and selectively removing the storage electrode film in the thin film transistor region to simultaneously form a first active layer in the thin film transistor region and form a storage electrode in the storage region, wherein the active layer is formed of the polycrystalline silicon film and the storage electrode is formed of the storage electrode film.

摘要翻译： 公开了一种液晶显示器及其制造方法。 制造液晶显示器的方法包括制备限定被分成薄膜晶体管区域和存储区域的像素部分的绝缘基板，在基板的整个表面上依次形成多晶硅膜和存储电极膜，选择性地图案化 存储电极膜和多晶硅膜，以形成覆盖像素部分的像素图案，并且选择性地去除薄膜晶体管区域中的存储电极膜，以在薄膜晶体管区域中同时形成第一有源层，并形成存储 电极，其中有源层由多晶硅膜形成，并且存储电极由存储电极膜形成。

公开(公告)号：US20090325291A1

公开(公告)日：2009-12-31

申请号：US12304707

申请日：2007-06-12

申请人： Seong Min Park ,  Young Joo Kim ,  Young Chul Choi ,  Han Oh Park ,  So Rim Choung

发明人： Seong Min Park ,  Young Joo Kim ,  Young Chul Choi ,  Han Oh Park ,  So Rim Choung

IPC分类号： C12N5/02 ,  G01N33/48 ,  C07H21/02

CPC分类号： C12N15/111 ,  C12N2320/10

摘要： A method of preparing siRNAs for selective inhibition of target mRNA isotypes comprises: dividing target mRNA isotypes intended to inhibit the expression thereof and non-target mRNA isotypes from the mRNA isotypes of a gene; allotting a common location information region (A) of exons on genome DNA corresponding to the target mRNA isotypes; allotting a location information region (B) present specifically in exons of genome DNA corresponding to target mRNAs by excluding the location information region of exons on genome DNA corresponding to non-target mRNA from the location information region (A); determining base sequences in the target mRNAs corresponding to the location information region (B); and obtaining siRNA sequences for inhibiting the determined base sequences specifically. The method of the present invention can be used to prepare siRNAs for selective inhibition of specific target mRNA isotypes in a gene having several isotypes by alternative splicing, and enables siRNA design for all the genes in genome, making good tool for functional genomics study.

摘要翻译： 制备用于选择性抑制靶mRNA同种型的siRNA的方法包括：从基因的mRNA同种型分离旨在抑制其表达的靶mRNA同种型和非靶mRNA同种型; 在对应于靶mRNA同种型的基因组DNA上分配外显子的共同位置信息区（A）; 通过从所述位置信息区域（A）中排除与非靶mRNA相对应的基因组DNA上的外显子的位置信息区，分配特定存在于与靶mRNA相对应的基因组DNA外显子中的位置信息区（B）。 确定对应于位置信息区域（B）的目标mRNA中的碱基序列; 并获得特异性抑制所确定的碱基序列的siRNA序列。 本发明的方法可用于制备用于通过选择性剪接在具有多个同种型的基因中特异性靶mRNA同种型的选择性抑制的siRNA，并且使得能够对基因组中所有基因进行siRNA设计，为功能基因组学研究提供了良好的工具。

公开(公告)号：US20090206830A1

公开(公告)日：2009-08-20

申请号：US12033059

申请日：2008-02-19

申请人： Young Joo KIM ,  Bong Young Ahn ,  Seung Seok Lee ,  Young Gil Kim ,  Dong Jin Yoon

发明人： Young Joo KIM ,  Bong Young Ahn ,  Seung Seok Lee ,  Young Gil Kim ,  Dong Jin Yoon

IPC分类号： G01N27/82

CPC分类号： G01N27/9033 ,  G01N27/9013

摘要： Disclosed herein is a sensor for detecting surface defects of a metal tube, which can solve a problem of a conventional eddy current probe in that it is difficult to detect a crack in the circumferential direction of a metal tube.For this purpose, the present provides a sensor for detecting surface defects of a metal tube, the sensor including a plurality of coils wound at a predetermined inclined angle, wherein the plurality of coils is inserted into the inside of a metal tube and an alternating current is applied to the coils to measure a change in impedance of the coils due to a change in an eddy current generated in the metal tube, thus detecting a surface defect of the metal tube.

摘要翻译： 这里公开了一种用于检测金属管的表面缺陷的传感器，其可以解决常规涡流探针的问题，因为难以检测金属管的圆周方向的裂纹。 为此，本发明提供了一种用于检测金属管的表面缺陷的传感器，该传感器包括以预定倾斜角度缠绕的多个线圈，其中多个线圈插入金属管的内部，并且交流 施加到线圈以测量由于金属管中产生的涡流的变化而导致的线圈阻抗的变化，从而检测金属管的表面缺陷。

公开(公告)号：US07569307B2

公开(公告)日：2009-08-04

申请号：US11016782

申请日：2004-12-21

申请人： Hyun Sik Seo ,  Yun Ho Jung ,  Young Joo Kim ,  JaeSung You

发明人： Hyun Sik Seo ,  Yun Ho Jung ,  Young Joo Kim ,  JaeSung You

IPC分类号： H01L21/84

CPC分类号： H01L21/0268 ,  B23K26/066 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78675

摘要： A laser mask includes a mask pattern with edges having inverted shapes to alleviate the effects of diffraction of laser beams to reduce overlap regions such that crystallization characteristics are improved. The laser mask includes a mask pattern that includes transmitting regions and a blocking region. The edges of the mask have shapes inverted to the shapes of the edges of a silicon thin film crystallized by the pattern.

摘要翻译： 激光掩模包括具有倒置形状的边缘的掩模图案，以减轻激光束的衍射的影响，以减少重叠区域，从而提高结晶特性。 激光掩模包括包括透射区域和阻挡区域的掩模图案。 掩模的边缘具有与通过图案结晶的硅薄膜的边缘的形状相反的形状。

公开(公告)号：US20090159892A1

公开(公告)日：2009-06-25

申请号：US12318284

申请日：2008-12-23

申请人： Su Hyuk Kang ,  Dai Yun Lee ,  Yong In Park ,  Young Joo Kim

发明人： Su Hyuk Kang ,  Dai Yun Lee ,  Yong In Park ,  Young Joo Kim

IPC分类号： H01L29/786 ,  H01L33/00 ,  H01L21/336

CPC分类号： H01L29/42384 ,  G02F1/13454 ,  H01L27/124 ,  H01L27/14621 ,  H01L29/78621

摘要： An array substrate for an LCD device includes a first TFT including a first semiconductor layer, a first gate electrode, wherein the first gate electrode is directly over the first semiconductor layer; a first protrusion extending from the first gate electrode along an edge of the first semiconductor layer; a second TFT including a second semiconductor layer, a second gate electrode, wherein the second gate electrode is directly over the second semiconductor layer; a second protrusion extending from the second gate electrode along an edge of the second semiconductor layer; a third TFT connected to crossed data and gate lines including a third semiconductor layer, a third gate electrode, wherein the third gate electrode is directly over the third semiconductor layer; a third protrusion extending from the third gate electrode along an edge of the third semiconductor layer; and a pixel electrode.

公开(公告)号：US20080012846A1

公开(公告)日：2008-01-17

申请号：US11485631

申请日：2006-07-13

申请人： Yun Gi Jung ,  Young Joo Kim ,  Heung Seon Hwang

发明人： Yun Gi Jung ,  Young Joo Kim ,  Heung Seon Hwang

IPC分类号： G06F17/00

CPC分类号： G09B23/00

摘要： A virtual education system for a mounter and a method for controlling the same are provided to teach users how to manipulate the mounter through virtual models (animation or simulation models) of the mounter so that they learn how to manipulate it through the same operation procedures and methods as the real ones of the mounter. A user manual containing structures and functions of elements of the mounter and operation procedures and methods thereof is provided. Virtual models representing contents of the user manual are produced to display corresponding configurations of the mounter. Specifically, virtual models representing items included in the user manual, which are associated with installation and startup of the mounter, respective structures and operations of the elements, manufacturing processes of the mounter for producing a product, and tasks in each manufacturing process, are produced to display corresponding configurations of the mounter on a screen.

摘要翻译： 提供一种用于安装者的虚拟教育系统及其控制方法，以教导用户如何通过安装者的虚拟模型（动画或仿真模型）来操纵安装者，以便他们通过相同的操作步骤学习如何操作它， 方法作为安装者的实际。 提供了一种包含安装器元件的结构和功能的用户手册及其操作步骤及方法。 产生表示用户手册内容的虚拟模型，以显示贴片机的相应配置。 特别地，生成表示与安装器的安装和启动相关的用户手册中包括的项目的虚拟模型，元件的相应结构和操作，用于生产产品的贴片机的制造过程以及每个制造过程中的任务 以在屏幕上显示贴片机的相应配置。

公开(公告)号：US20080002081A1

公开(公告)日：2008-01-03

申请号：US11586831

申请日：2006-10-26

申请人： Young-Joo Kim ,  Seok-Woo Lee

发明人： Young-Joo Kim ,  Seok-Woo Lee

IPC分类号： G02F1/136

CPC分类号： G02F1/136227 ,  G02F1/136213 ,  H01L27/124

摘要： An LCD device and a method of fabricating the same are provided. The LCD device comprises a first substrate divided into a pixel unit and a circuit unit. Active patterns are disposed in the pixel unit and the circuit unit of the first substrate. A first insulating film is disposed on the first substrate. Gate electrodes are disposed in the pixel unit and the circuit unit of the first substrate, and common lines are disposed in the pixel unit of the first substrate. First contact holes and second contact holes are disposed in regions of the first insulating film, the first interlayer insulating film and the second interlayer insulating film. Source electrodes and drain electrodes electrically connect to the source regions and the drain regions of the active patterns through the first contact holes and the second contact holes.

摘要翻译： 提供了一种LCD装置及其制造方法。 LCD装置包括分为像素单元和电路单元的第一基板。 有源图案设置在第一基板的像素单元和电路单元中。 第一绝缘膜设置在第一基板上。 栅电极设置在第一基板的像素单元和电路单元中，公共线设置在第一基板的像素单元中。 第一接触孔和第二接触孔设置在第一绝缘膜，第一层间绝缘膜和第二层间绝缘膜的区域中。 源电极和漏电极通过第一接触孔和第二接触孔电连接到有源图案的源极区域和漏极区域。

公开(公告)号：US20080002074A1

公开(公告)日：2008-01-03

申请号：US11643876

申请日：2006-12-22

申请人： Seok-Woo Lee ,  Young-Joo Kim

发明人： Seok-Woo Lee ,  Young-Joo Kim

IPC分类号： G02F1/1343

CPC分类号： G02F1/136213 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2001/13685 ,  G02F2202/104

摘要： A liquid crystal display and a method for fabricating the same are disclosed. The method for fabricating a liquid crystal display includes preparing an insulating substrate defining a pixel portion divided into a thin film transistor region and a storage region, sequentially forming a polycrystalline silicon film and a storage electrode film on an entire surface of the substrate, selectively patterning the storage electrode film and the polycrystalline silicon film to form a pixel pattern that covers the pixel portion, and selectively removing the storage electrode film in the thin film transistor region to simultaneously form a first active layer in the thin film transistor region and form a storage electrode in the storage region, wherein the active layer is formed of the polycrystalline silicon film and the storage electrode is formed of the storage electrode film.

摘要翻译： 公开了一种液晶显示器及其制造方法。 制造液晶显示器的方法包括制备限定被分成薄膜晶体管区域和存储区域的像素部分的绝缘基板，在基板的整个表面上依次形成多晶硅膜和存储电极膜，选择性地图案化 存储电极膜和多晶硅膜，以形成覆盖像素部分的像素图案，并且选择性地去除薄膜晶体管区域中的存储电极膜，以在薄膜晶体管区域中同时形成第一有源层，并形成存储 电极，其中有源层由多晶硅膜形成，并且存储电极由存储电极膜形成。

公开(公告)号：US20060125120A1

公开(公告)日：2006-06-15

申请号：US11353206

申请日：2006-02-14

申请人： Young-Joo Kim

发明人： Young-Joo Kim

IPC分类号： H01L23/544

CPC分类号： H01L21/0268 ,  H01L21/02532 ,  H01L23/544 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66757 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of fabricating polycrystalline silicon according to an embodiment includes forming a semiconductor layer of amorphous silicon on a substrate having a first region and a second region surrounding the first region; forming a plurality of flat align keys in the second region using a first mask; forming a plurality of convex align keys by etching the semiconductor layer in the first region, the plurality of convex align keys having steps against the substrate; and crystallizing the semiconductor layer in the first region by aligning a second mask with respect to the plurality of convex align keys.

摘要翻译： 根据实施例的制造多晶硅的方法包括在具有第一区域和围绕第一区域的第二区域的衬底上形成非晶硅半导体层; 使用第一掩模在所述第二区域中形成多个平坦对齐键; 通过蚀刻第一区域中的半导体层来形成多个凸起的对准键，所述多个凸出对准键具有抵靠衬底的台阶; 以及通过使所述第二掩模相对于所述多个凸起的对准键对准来使所述第一区域中的所述半导体层结晶。

公开(公告)号：US06949422B2

公开(公告)日：2005-09-27

申请号：US10746019

申请日：2003-12-23

申请人： Young-Joo Kim

发明人： Young-Joo Kim

IPC分类号： C30B25/04 ,  B23K26/06 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L21/00

CPC分类号： H01L21/0268 ,  B23K26/066 ,  H01L21/2026 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

摘要： Sequential lateral solidification (SLS) crystallization of amorphous silicon uses a mask having light transmitting portions. A method of crystallizing an amorphous silicon film using the mask includes forming an amorphous silicon layer over a substrate; forming a metal layer on the amorphous silicon layer; patterning the metal layer to expose a portion of the amorphous silicon layer in a TFT area where a thin film transistor is formed; disposing the mask over the portion of the amorphous silicon layer exposed by the metal layer; and irradiating the portion of the amorphous silicon layer exposed by the metal layer using a laser beam that passes through the light transmitting portions of the mask such that the portion of the amorphous silicon layer is crystallized and laterally growing grains are formed in grain regions.

摘要翻译： 非晶硅的顺序横向固化（SLS）结晶使用具有透光部分的掩模。 使用掩模使非晶硅膜结晶的方法包括在基板上形成非晶硅层; 在所述非晶硅层上形成金属层; 图案化金属层以在形成薄膜晶体管的TFT区域中露出非晶硅层的一部分; 将掩模设置在由金属层暴露的非晶硅层的部分上; 并且使用穿过掩模的透光部分的激光束照射由金属层暴露的非晶硅层的部分，使得非晶硅层的部分结晶，并且在颗粒区域中形成横向生长的晶粒。