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    TUBULAR MEDICAL DEVICE CLEANING BALL AND MANUFACTURING METHOD THEREFOR
    1.
    发明申请
    TUBULAR MEDICAL DEVICE CLEANING BALL AND MANUFACTURING METHOD THEREFOR 审中-公开

    公开(公告)号：US20200323425A1

    公开(公告)日：2020-10-15

    申请号：US16304111

    申请日：2018-03-12

    申请人： Young Chul CHOI

    发明人： Young Chul CHOI

    IPC分类号： A61B1/12 ,  A61B1/00 ,  A61B90/70

    摘要： The present invention relates to: a tubular medical device cleaning ball; and a manufacturing method therefor and, more specifically, to: a tubular medical device cleaning ball capable of cleaning a tubular medical device by being injected together with a cleaning solution without using a separate brush and the like in order to clean the tubular medical device inserted into the human body during minimally invasive surgery; and a manufacturing method therefor. To this end, the cleaning ball is manufactured as a sphere having surface roughness and a cavity therein.

    METHOD AND DEVICE FOR LOW FREQUENCY VIBRATION EXCITATION USING ULTRASONIC WAVE
    2.
    发明申请
    METHOD AND DEVICE FOR LOW FREQUENCY VIBRATION EXCITATION USING ULTRASONIC WAVE 审中-公开
    使用超声波的低频振动激励的方法和装置

    公开(公告)号：US20110314916A1

    公开(公告)日：2011-12-29

    申请号：US12825961

    申请日：2010-06-29

    申请人： Jin-Ho Park ,  Doo-Byung Yoon ,  Young-Chul Choi ,  Sung Hwan Shin

    发明人： Jin-Ho Park ,  Doo-Byung Yoon ,  Young-Chul Choi ,  Sung Hwan Shin

    IPC分类号： G01N29/12

    CPC分类号： G01N29/348 ,  G01N29/42 ,  G01N2291/106

    摘要： Provided is a method and device for low frequency vibration excitation, which may generate a low frequency using a plurality of ultrasonic generators for high frequency. The method generates ultrasonic waves using a plurality of ultrasonic generators attached to a target structure to induce a beat phenomenon, and extract a frequency lower than a frequency of each of the plurality of the ultrasonic generators to measure a property of the target structure, and thereby may be freely applied to a target structure, regardless of a shape of the target structure such as a plate, a curved pipe, and the like, using a relatively small-sized ultrasonic sensor for high frequency, and may excite a specific frequency of an acceleration range, so that the ultrasonic excitation method may be applicable in a relatively poor Signal-to-Noise Ratio (SNR) range.

    摘要翻译： 提供了一种用于低频振动激励的方法和装置，其可以使用多个用于高频的超声波发生器来产生低频。 该方法使用附着到目标结构的多个超声波发生器产生超声波，以引起拍子现象，并且提取比多个超声波发生器的频率低的频率来测量目标结构的特性，从而 可以使用相对较小尺寸的用于高频率的超声波传感器，而不管诸如板，弯曲管等的目标结构的形状如何，可以自由地施加到目标结构，并且可以激发特定的频率 加速度范围，使得超声波激发方法可适用于相对较差的信噪比（SNR）范围。

    METHOD AND SYSTEM FOR MEASURING STRUCTURAL VIBRATION USING CURVE FITTING FROM VIDEO SIGNAL
    3.
    发明申请
    METHOD AND SYSTEM FOR MEASURING STRUCTURAL VIBRATION USING CURVE FITTING FROM VIDEO SIGNAL 审中-公开
    使用来自视频信号的曲线测量结构振动的方法和系统

    公开(公告)号：US20110050890A1

    公开(公告)日：2011-03-03

    申请号：US12871641

    申请日：2010-08-30

    申请人： Young-Chul Choi ,  Jin-Ho Park ,  Hyeong Seop Jeon ,  Doo-Byung Yoon ,  Sung Hwan Shin

    发明人： Young-Chul Choi ,  Jin-Ho Park ,  Hyeong Seop Jeon ,  Doo-Byung Yoon ,  Sung Hwan Shin

    IPC分类号： H04N7/18

    CPC分类号： H04N5/23248 ,  H04N5/23229 ,  H04N5/23254 ,  H04N5/23267

    摘要： A method and system for measuring structural vibration using curve fitting from a video signal, which can reduce an error in vibration measurement displacement, is provided. A method for measuring structural vibration using curve fitting from a video signal, the method includes the steps of: obtaining a video signal of the object; converting the video signal of the object into a gray video signal; adjusting the brightness of the converted video signal; separating an area to be measured from the brightness-adjusted video signal; selecting an edge area of the object from a video signal of the separated area; removing noises from the edge regions; and performing curve fitting with respect to the noise-removed video signal of the edge area. Accordingly, a displacement error is reduced, so that vibration can be more exactly measured.

    摘要翻译： 提供了一种使用来自视频信号的曲线拟合来测量结构振动的方法和系统，其可以减少振动测量位移中的误差。 一种使用来自视频信号的曲线拟合来测量结构振动的方法，该方法包括以下步骤：获得对象的视频信号; 将对象的视频信号转换为灰色视频信号; 调整转换的视频信号的亮度; 从亮度调整后的视频信号中分离待测区域; 从分离区域的视频信号中选择对象的边缘区域; 去除边缘区域的噪声; 并对边缘区域的噪声消除视频信号执行曲线拟合。 因此，位移误差降低，从而可以更准确地测量振动。

    METHOD OF PREPARING siRNAs FOR SELECTIVE INHIBITION OF TARGET mRNA ISOTYPES
    5.
    发明申请
    METHOD OF PREPARING siRNAs FOR SELECTIVE INHIBITION OF TARGET mRNA ISOTYPES 审中-公开
    制备用于选择性抑制靶标mRNA同功酶的siRNA的方法

    公开(公告)号：US20090325291A1

    公开(公告)日：2009-12-31

    申请号：US12304707

    申请日：2007-06-12

    申请人： Seong Min Park ,  Young Joo Kim ,  Young Chul Choi ,  Han Oh Park ,  So Rim Choung

    发明人： Seong Min Park ,  Young Joo Kim ,  Young Chul Choi ,  Han Oh Park ,  So Rim Choung

    IPC分类号： C12N5/02 ,  G01N33/48 ,  C07H21/02

    CPC分类号： C12N15/111 ,  C12N2320/10

    摘要： A method of preparing siRNAs for selective inhibition of target mRNA isotypes comprises: dividing target mRNA isotypes intended to inhibit the expression thereof and non-target mRNA isotypes from the mRNA isotypes of a gene; allotting a common location information region (A) of exons on genome DNA corresponding to the target mRNA isotypes; allotting a location information region (B) present specifically in exons of genome DNA corresponding to target mRNAs by excluding the location information region of exons on genome DNA corresponding to non-target mRNA from the location information region (A); determining base sequences in the target mRNAs corresponding to the location information region (B); and obtaining siRNA sequences for inhibiting the determined base sequences specifically. The method of the present invention can be used to prepare siRNAs for selective inhibition of specific target mRNA isotypes in a gene having several isotypes by alternative splicing, and enables siRNA design for all the genes in genome, making good tool for functional genomics study.

    摘要翻译： 制备用于选择性抑制靶mRNA同种型的siRNA的方法包括：从基因的mRNA同种型分离旨在抑制其表达的靶mRNA同种型和非靶mRNA同种型; 在对应于靶mRNA同种型的基因组DNA上分配外显子的共同位置信息区（A）; 通过从所述位置信息区域（A）中排除与非靶mRNA相对应的基因组DNA上的外显子的位置信息区，分配特定存在于与靶mRNA相对应的基因组DNA外显子中的位置信息区（B）。 确定对应于位置信息区域（B）的目标mRNA中的碱基序列; 并获得特异性抑制所确定的碱基序列的siRNA序列。 本发明的方法可用于制备用于通过选择性剪接在具有多个同种型的基因中特异性靶mRNA同种型的选择性抑制的siRNA，并且使得能够对基因组中所有基因进行siRNA设计，为功能基因组学研究提供了良好的工具。

    ELECTRON EMISSION DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRON EMISSION DISPLAY INCLUDING THE SAME
    6.
    发明申请
    ELECTRON EMISSION DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRON EMISSION DISPLAY INCLUDING THE SAME 审中-公开
    电子发射装置，其制造方法和包括其的电子发射显示

    公开(公告)号：US20090134768A1

    公开(公告)日：2009-05-28

    申请号：US12325038

    申请日：2008-11-28

    申请人： Young-Chul Choi ,  Jong-Hwan Park

    发明人： Young-Chul Choi ,  Jong-Hwan Park

    IPC分类号： H01J1/62 ,  H01J1/13 ,  H01J9/00

    CPC分类号： H01J1/304 ,  H01J9/025 ,  H01J2201/3195

    摘要： An electron emission device includes: a substrate; a cathode on the substrate; one or more electron emission regions electrically connected with the cathode; an insulation layer between the cathode and a gate electrode formed on the insulation layer; and a resistance layer electrically connected to the cathode and the one or more electron emission regions. Here, the resistance layer includes a boron nitride-based material.

    摘要翻译： 电子发射装置包括：基板; 衬底上的阴极; 与阴极电连接的一个或多个电子发射区域; 阴极和形成在绝缘层上的栅电极之间的绝缘层; 以及与阴极和一个或多个电子发射区电连接的电阻层。 这里，电阻层包括氮化硼基材料。

    Power semiconductor device having high breakdown voltage, low on-resistance, and small switching loss and method of forming the same
    8.
    发明授权
    Power semiconductor device having high breakdown voltage, low on-resistance, and small switching loss and method of forming the same 有权
    具有高击穿电压，低导通电阻和小开关损耗的功率半导体器件及其形成方法

    公开(公告)号：US06930356B2

    公开(公告)日：2005-08-16

    申请号：US10464059

    申请日：2003-06-17

    申请人： Young-chul Choi ,  Tae-hoon Kim ,  Ho-cheol Jang ,  Chong-man Yun

    发明人： Young-chul Choi ,  Tae-hoon Kim ,  Ho-cheol Jang ,  Chong-man Yun

    IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/739 ,  H01L29/78 ,  H01L31/119

    CPC分类号： H01L29/7802 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/7395

    摘要： In accordance with one embodiment of the present invention, a power semiconductor device includes a first drift region of a first conductivity type extending over a semiconductor substrate. The first drift region has a lower impurity concentration than the semiconductor substrate. A second drift region of the first conductivity type extends over the first drift region, and has a higher impurity concentration than the first drift region. A plurality of stripe-shaped body regions of a second conductivity type are formed in an upper portion of the second drift region. A third region of the first conductivity type is formed in an upper portion of each body region so as to form a channel region in each body region between the third region and the second drift region. A gate electrode laterally extends over but is insulated from: (i) the channel region in each body region, (ii) a surface area of the second drift region between adjacent stripes of body regions, and (iii) a surface portion of each source region.

    摘要翻译： 根据本发明的一个实施例，功率半导体器件包括在半导体衬底上延伸的第一导电类型的第一漂移区。 第一漂移区域具有比半导体衬底更低的杂质浓度。 第一导电类型的第二漂移区域在第一漂移区域上延伸，并且具有比第一漂移区域更高的杂质浓度。 第二导电类型的多个条形体区域形成在第二漂移区域的上部。 第一导电类型的第三区域形成在每个体区的上部，以便在第三区域和第二漂移区域之间的每个体区域中形成沟道区域。 栅电极横向延伸，但与以下绝缘：（i）每个体区中的沟道区，（ii）相邻的体区之间的第二漂移区的表面积，和（iii）每个源的表面部分 地区。

    Power semiconductor device and methods for fabricating the same
    9.
    发明授权
    Power semiconductor device and methods for fabricating the same 有权
    功率半导体器件及其制造方法

    公开(公告)号：US08674402B2

    公开(公告)日：2014-03-18

    申请号：US13443371

    申请日：2012-04-10

    申请人： Jin-myung Kim ,  Se-woong Oh ,  Jae-gil Lee ,  Young-chul Choi ,  Ho-cheol Jang

    发明人： Jin-myung Kim ,  Se-woong Oh ,  Jae-gil Lee ,  Young-chul Choi ,  Ho-cheol Jang

    IPC分类号： H01L27/092

    CPC分类号： H01L29/66712 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/4238 ,  H01L29/7395 ,  H01L29/7802

    摘要： A power semiconductor device includes: a drain region of a first conductive type; a drift region of a first conductive type formed on the drain region; a first body region of a second conductive type formed below an upper surface of the drift region; a second body region of a second conductive type formed below the upper surface of the drift region and in the first body region; a third body region of a second conductive type formed by protruding downwards from a lower end of the first body region; a source region of a first conductive type formed below the upper surface of the drift region and in the first body region; and a gate insulating layer formed on channel regions of the first body region and on the drift region between the first body regions.

    摘要翻译： 功率半导体器件包括：第一导电类型的漏极区域; 形成在漏区上的第一导电类型的漂移区; 形成在所述漂移区域的上表面下方的第二导电类型的第一体区; 第二导电类型的第二体区，形成在所述漂移区的上表面下方和所述第一体区中; 第二导电类型的第三体区域，从第一体区域的下端向下突出形成; 形成在所述漂移区域的上表面下方的所述第一导电类型的源极区域和所述第一体区域中; 以及栅极绝缘层，形成在第一体区的沟道区域和第一体区之间的漂移区上。

    POWER SEMICONDUCTOR DEVICE AND METHODS FOR FABRICATING THE SAME
    10.
    发明申请
    POWER SEMICONDUCTOR DEVICE AND METHODS FOR FABRICATING THE SAME 有权
    功率半导体器件及其制造方法

    公开(公告)号：US20120261715A1

    公开(公告)日：2012-10-18

    申请号：US13443371

    申请日：2012-04-10

    申请人： Jin-myung KIM ,  Se-woong OH ,  Jae-gil LEE ,  Young-chul CHOI ,  Ho-cheol JANG

    发明人： Jin-myung KIM ,  Se-woong OH ,  Jae-gil LEE ,  Young-chul CHOI ,  Ho-cheol JANG

    IPC分类号： H01L27/092 ,  H01L21/8238 ,  H01L29/732

    CPC分类号： H01L29/66712 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/4238 ,  H01L29/7395 ,  H01L29/7802

    摘要： A power semiconductor device includes: a drain region of a first conductive type; a drift region of a first conductive type formed on the drain region; a first body region of a second conductive type formed below an upper surface of the drift region; a second body region of a second conductive type formed below the upper surface of the drift region and in the first body region; a third body region of a second conductive type formed by protruding downwards from a lower end of the first body region; a source region of a first conductive type formed below the upper surface of the drift region and in the first body region; and a gate insulating layer formed on channel regions of the first body region and on the drift region between the first body regions.

    摘要翻译： 功率半导体器件包括：第一导电类型的漏极区域; 形成在漏区上的第一导电类型的漂移区; 形成在所述漂移区域的上表面下方的第二导电类型的第一体区; 第二导电类型的第二体区，形成在所述漂移区的上表面下方和所述第一体区中; 第二导电类型的第三体区域，从第一体区域的下端向下突出形成; 形成在所述漂移区域的上表面下方的所述第一导电类型的源极区域和所述第一体区域中; 以及栅极绝缘层，形成在第一体区的沟道区域和第一体区之间的漂移区上。