Hydrophilic zeolite coating
    31.
    发明授权
    Hydrophilic zeolite coating 失效
    亲水性沸石涂层

    公开(公告)号:US06849568B2

    公开(公告)日:2005-02-01

    申请号:US10319027

    申请日:2002-12-12

    Applicant: Yushan Yan

    Inventor: Yushan Yan

    Abstract: A hydrophilic coating can be optionally corrosion resistant and/or microbial resistant for a substrate such as a heat exchanger. The coating is provided by a zeolite layer that can be formed from a synthesis solution comprising a structure directing agent, a base, a silicon source, an aluminum source, and a solvent. In one preferred embodiment, the synthesis solution comprises tetrapropylammonium hydroxide, sodium hydroxide, aluminum oxide, tetraethylorthosilicate, and water. The layer is characterized by a zeolite MFI structure and by a composition having the formula of Mn/m[AlnSi(96-n)O192], or [AlnSi(96-n)O192].4[(CH3CH2CH2)4N—OH] wherein M is a metal ion of valence m+ (e.g., Na+) and 27>n>=0. After formation of the coating, the organic structure directing agent can be left intact inside the zeolite coating to make the coating corrosion resistant. Alternatively, and after removal of the organic structure directing agent, a biocidal metal ion can be incorporated into the coating by an ion exchange process to render the coating microbial resistant. A hydrophilic coating that is also corrosion resistant and microbial resistant can be made by a zeolite coating with two sub-layers—the bottom sub-layer being corrosion resistant and the top sub-layer being microbial resistant.

    Abstract translation: 对于诸如热交换器的基底,亲水涂层可以任选地具有耐腐蚀性和/或微生物性。 该涂层由可由包含结构导向剂,碱,硅源,铝源和溶剂的合成溶液形成的沸石层提供。 在一个优选实施方案中,合成溶液包括四丙基氢氧化铵,氢氧化钠,氧化铝,原硅酸四乙酯和水。 该层的特征在于沸石MFI结构和通式为Mn / m [AlnSi(96-n)O192]或[AlnSi(96-n)O192] .4 [(CH3CH2CH2)4N-OH] 其中M是价数m +(例如Na +)和27> n> = 0的金属离子。 在形成涂层之后,有机结构导向剂可以保持在沸石涂层内部,使涂层具有耐腐蚀性。 或者,除去有机结构导向剂后,可以通过离子交换法将杀生物金属离子引入涂层中,以使涂层微生物具有抗性。 也可以通过具有两个子层的沸石涂层来制备也具有耐腐蚀和微生物抵抗性的亲水性涂层 - 底部亚层是耐腐蚀的,顶部亚层是微生物抗性的。

    Silica zeolite low-k dielectric thin films

    公开(公告)号:US06630696B2

    公开(公告)日:2003-10-07

    申请号:US10112162

    申请日:2002-03-28

    Abstract: Thin films for use as dielectric in semiconductor and other devices are prepared from silica zeolites, preferably pure silica zeolites such as pure-silica MFI. The films have low k values, generally below about 2.7, ranging downwards to k values below 2.2. The films have relatively uniform pore distribution, good mechanical strength and adhesion, are relatively little affected by moisture, and are thermally stable. The films may be produced from a starting zeolite synthesis or precursor composition containing a silica source and an organic zeolite structure-directing agent such as a quaternary ammonium hydroxide. In one process the films are produced from the synthesis composition by in-situ crystallization on a substrate. In another process, the films are produced by spin-coating, either through production of a suspension of zeolite crystals followed by redispersion or by using an excess of the alkanol produced in preparing the synthesis composition. Zeolite films having patterned surfaces may also be produced.

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