公开(公告)号：US20220068639A1

公开(公告)日：2022-03-03

申请号：US17410983

申请日：2021-08-24

Applicant: ASM IP Holding B.V.

Inventor： Naoki Inoue ,  Ryu Nakano ,  Shinya Yamada ,  Mao Tsuchiya

IPC: H01L21/02 ,  H01L21/033 ,  H01J37/32 ,  C23C16/455 ,  C23C16/04 ,  C23C16/52 ,  C23C16/34 ,  C23C16/40

Abstract: Methods of forming patterned structures suitable for a multiple patterning process are disclosed. Exemplary methods include forming a layer overlying the substrate by providing a precursor to the reaction chamber for a precursor pulse period, providing a reactant to the reaction chamber for a reactant pulse period, applying a first plasma power having a first frequency (e.g., less than 1 MHz) for a first plasma power period, and optionally applying a second plasma power having a second frequency for a second plasma power period, wherein the first frequency is different than the second frequency.

公开(公告)号：US20140367359A1

公开(公告)日：2014-12-18

申请号：US13915732

申请日：2013-06-12

Applicant: ASM IP Holding B.V.

Inventor： Ryu Nakano ,  Naoki Inoue

IPC: H01J37/32 ,  C23C16/455

CPC classification number: H01J37/32449 ,  C23C16/4551 ,  C23C16/45519 ,  C23C16/45536 ,  C23C16/4585 ,  C23C16/5096 ,  H01J37/32431

Abstract: A method for controlling in-plane uniformity of a substrate processed by plasma-assisted process in a reactor, includes: supplying a principal gas to a reaction space, and discharging radially the principal gas from the reaction space through an annular duct; and supplying an secondary gas to the reaction space from an area in close proximity to an outer periphery of a susceptor, outside an outer circumference of the substrate as viewed from above, so as to flow at least partially in an inward direction passing the outer circumference of the substrate, reversing the direction of the secondary gas to flow toward the annular duct in a vicinity of the outer circumference of the substrate, and discharging radially the secondary gas together with the principal gas from the reaction space through the annular duct.

Abstract translation: 一种用于控制在反应器中通过等离子体辅助工艺处理的衬底的面内均匀性的方法，包括：向反应空间供应主要气体，并通过环形管径向从反应空间排出主要气体; 以及从基座的外周附近的区域向反应空间供给二次气体，在从上方观察的基板的外周的外侧，至少部分地沿着通过外周的内侧流动 使基板的外周附近的二次气体的方向反向流向环状管道，并且使二次气体与来自反应空间的主要气体一起径向地通过环形管排出。