公开(公告)号：US20230395372A1

公开(公告)日：2023-12-07

申请号：US18236654

申请日：2023-08-22

Applicant: ASM IP Holding B.V.

Inventor： Shinya Yamada ,  Kai Matsuhisa ,  YouJin Choi ,  Hyunchul Kim ,  Eunji Bae ,  SeungRyul Lee ,  Naoki Inoue ,  Ryu Nakano ,  Mao Tsuchiya

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/04 ,  C23C16/50

CPC classification number: H01L21/0234 ,  H01L21/02274 ,  H01L21/0228 ,  H01J37/32165 ,  H01J37/3244 ,  C23C16/04 ,  C23C16/50 ,  H01J2237/332

Abstract: Methods of forming patterned structures suitable for a multiple patterning process and manipulating film properties are disclosed. Exemplary methods include forming a layer overlying the substrate, followed by treating the layer, wherein the layer is formed by providing a precursor to the reaction chamber for a precursor pulse period, providing a reactant to the reaction chamber for a reactant pulse period, applying a first plasma power having a first frequency for a first plasma power period, and optionally applying a second plasma power having a second frequency for a second plasma power period, wherein the first frequency is different than the second frequency. Exemplary methods can further include a step of treating the deposited material.

公开(公告)号：US12074022B2

公开(公告)日：2024-08-27

申请号：US17410983

申请日：2021-08-24

Applicant: ASM IP Holding B.V.

Inventor： Naoki Inoue ,  Ryu Nakano ,  Shinya Yamada ,  Mao Tsuchiya

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/52 ,  H01J37/32 ,  H01L21/033

CPC classification number: H01L21/02274 ,  C23C16/042 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45536 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32449 ,  H01L21/0228 ,  H01L21/0337 ,  H01J2237/332 ,  H01L21/02142 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02172

Abstract: Methods of forming patterned structures suitable for a multiple patterning process are disclosed. Exemplary methods include forming a layer overlying the substrate by providing a precursor to the reaction chamber for a precursor pulse period, providing a reactant to the reaction chamber for a reactant pulse period, applying a first plasma power having a first frequency (e.g., less than 1 MHz) for a first plasma power period, and optionally applying a second plasma power having a second frequency for a second plasma power period, wherein the first frequency is different than the second frequency.

公开(公告)号：US20220068639A1

公开(公告)日：2022-03-03

申请号：US17410983

申请日：2021-08-24

Applicant: ASM IP Holding B.V.

Inventor： Naoki Inoue ,  Ryu Nakano ,  Shinya Yamada ,  Mao Tsuchiya

IPC: H01L21/02 ,  H01L21/033 ,  H01J37/32 ,  C23C16/455 ,  C23C16/04 ,  C23C16/52 ,  C23C16/34 ,  C23C16/40

Abstract: Methods of forming patterned structures suitable for a multiple patterning process are disclosed. Exemplary methods include forming a layer overlying the substrate by providing a precursor to the reaction chamber for a precursor pulse period, providing a reactant to the reaction chamber for a reactant pulse period, applying a first plasma power having a first frequency (e.g., less than 1 MHz) for a first plasma power period, and optionally applying a second plasma power having a second frequency for a second plasma power period, wherein the first frequency is different than the second frequency.