公开(公告)号：US20230395372A1

公开(公告)日：2023-12-07

申请号：US18236654

申请日：2023-08-22

Applicant: ASM IP Holding B.V.

Inventor： Shinya Yamada ,  Kai Matsuhisa ,  YouJin Choi ,  Hyunchul Kim ,  Eunji Bae ,  SeungRyul Lee ,  Naoki Inoue ,  Ryu Nakano ,  Mao Tsuchiya

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/04 ,  C23C16/50

CPC classification number: H01L21/0234 ,  H01L21/02274 ,  H01L21/0228 ,  H01J37/32165 ,  H01J37/3244 ,  C23C16/04 ,  C23C16/50 ,  H01J2237/332

Abstract: Methods of forming patterned structures suitable for a multiple patterning process and manipulating film properties are disclosed. Exemplary methods include forming a layer overlying the substrate, followed by treating the layer, wherein the layer is formed by providing a precursor to the reaction chamber for a precursor pulse period, providing a reactant to the reaction chamber for a reactant pulse period, applying a first plasma power having a first frequency for a first plasma power period, and optionally applying a second plasma power having a second frequency for a second plasma power period, wherein the first frequency is different than the second frequency. Exemplary methods can further include a step of treating the deposited material.

公开(公告)号：US20230343551A1

公开(公告)日：2023-10-26

申请号：US18137779

申请日：2023-04-21

Applicant: ASM IP Holding B.V.

Inventor： Shinya Yamada

IPC: C23C16/36 ,  C23C16/40 ,  C23C16/34 ,  C23C16/04 ,  C23C16/455 ,  C23C16/505 ,  H01J37/32

CPC classification number: H01J37/32082 ,  C23C16/042 ,  C23C16/345 ,  C23C16/36 ,  C23C16/401 ,  C23C16/45536 ,  C23C16/505 ,  H01J2237/0203 ,  H01J2237/332

Abstract: Provided is a substrate processing method in which a liner layer is formed on the photo resist underlayer, followed by forming SiO2 patterning layer thereon. According to the embodiment, the liner layer is formed by providing a silicon-containing layer, followed by inert gas activated by providing a high frequency RF power and a low frequency RF power together simultaneously. Thus, a loss of photo resist underlayer may be minimized within the range that does not affect the device performance and the wet etch properties and the width between fine patterns may be kept constant while the thickness of the liner layer is thin.

公开(公告)号：US12074022B2

公开(公告)日：2024-08-27

申请号：US17410983

申请日：2021-08-24

Applicant: ASM IP Holding B.V.

Inventor： Naoki Inoue ,  Ryu Nakano ,  Shinya Yamada ,  Mao Tsuchiya

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/52 ,  H01J37/32 ,  H01L21/033

CPC classification number: H01L21/02274 ,  C23C16/042 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45536 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32449 ,  H01L21/0228 ,  H01L21/0337 ,  H01J2237/332 ,  H01L21/02142 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02172

Abstract: Methods of forming patterned structures suitable for a multiple patterning process are disclosed. Exemplary methods include forming a layer overlying the substrate by providing a precursor to the reaction chamber for a precursor pulse period, providing a reactant to the reaction chamber for a reactant pulse period, applying a first plasma power having a first frequency (e.g., less than 1 MHz) for a first plasma power period, and optionally applying a second plasma power having a second frequency for a second plasma power period, wherein the first frequency is different than the second frequency.

公开(公告)号：US20220068639A1

公开(公告)日：2022-03-03

申请号：US17410983

申请日：2021-08-24

Applicant: ASM IP Holding B.V.

Inventor： Naoki Inoue ,  Ryu Nakano ,  Shinya Yamada ,  Mao Tsuchiya

IPC: H01L21/02 ,  H01L21/033 ,  H01J37/32 ,  C23C16/455 ,  C23C16/04 ,  C23C16/52 ,  C23C16/34 ,  C23C16/40

Abstract: Methods of forming patterned structures suitable for a multiple patterning process are disclosed. Exemplary methods include forming a layer overlying the substrate by providing a precursor to the reaction chamber for a precursor pulse period, providing a reactant to the reaction chamber for a reactant pulse period, applying a first plasma power having a first frequency (e.g., less than 1 MHz) for a first plasma power period, and optionally applying a second plasma power having a second frequency for a second plasma power period, wherein the first frequency is different than the second frequency.