Block exposure pattern data extracting system and method for charged
particle beam exposure
    31.
    发明授权
    Block exposure pattern data extracting system and method for charged particle beam exposure 失效
    块曝光图案数据提取系统和带电粒子束曝光的方法

    公开(公告)号:US5590048A

    公开(公告)日:1996-12-31

    申请号:US71262

    申请日:1993-06-04

    IPC分类号: H01J37/302 G06F17/50 G06K9/00

    摘要: In a block exposure pattern extracting system applied to a charged-particle beam exposure system having a block mask including a plurality of transparent stats having different shapes, a comparator unit compares first vectors connecting one of apexes of an input exposure pattern to other apexes thereof with second vectors connecting a reference point which is one of apexes of a unit block exposure pattern to other apexes of the unit block exposure pattern. A determining unit determines whether or not the first vectors coincide with the second vectors. An extracting unit extracts the input exposure pattern as the unit block exposure pattern when the determining unit determines that the first vectors coincide with the second vectors.

    摘要翻译: 在应用于具有包括具有不同形状的多个透明统计数据的块掩模的带电粒子束曝光系统的块曝光图案提取系统中,比较器单元将连接输入曝光图案的顶点之一与其他顶点的第一矢量与 将单位块曝光图案的顶点之一的参考点连接到单位块曝光图案的其他顶点的第二矢量。 确定单元确定第一矢量是否与第二矢量一致。 当确定单元确定第一向量与第二向量一致时,提取单元提取输入的曝光图案作为单位块曝光图案。

    Method of exposing patttern of semiconductor devices and stencil mask
for carrying out same
    32.
    发明授权
    Method of exposing patttern of semiconductor devices and stencil mask for carrying out same 失效
    曝光半导体器件的模板和执行相同模板的方法

    公开(公告)号:US5364718A

    公开(公告)日:1994-11-15

    申请号:US57017

    申请日:1993-05-05

    摘要: A method is provided for exposing a semiconductor device pattern onto a semiconductor substrate by repeatedly exposing an adjoining arrangement of a plurality of unit patterns. The device pattern is first divided into a plurality of unit patterns. Then, a stencil mask is provided with transmitting openings having shapes conforming to the respective unit patterns. Pattern lines on the stencil mask of the unit patterns which are to be connected with each other have at least one connecting end provided with at least one protrusion having a width less than that of the corresponding pattern lines. The protrusion on the connecting end reduces errors such as interruptions or excessive broadening in an exposed pattern line due to misalignment. Also disclosed is a stencil mask for carrying out the present inventive method.

    摘要翻译: 提供了一种通过重复暴露多个单元图案的相邻布置来将半导体器件图案暴露于半导体衬底上的方法。 首先将装置图案划分为多个单位图案。 然后,模板掩模设置有具有符合相应单元图案的形状的透光开口。 要连接的单元图案的模板掩模上的图案线具有设置有至少一个具有小于对应图案线的宽度的突起的至少一个连接端。 连接端上的突起由于未对准而减少了暴露图案线中的中断或过度变宽的错误。 还公开了用于实施本发明的方法的模板掩模。

    Mask for lithographic patterning and a method of manufacturing the same
    33.
    发明授权
    Mask for lithographic patterning and a method of manufacturing the same 失效
    光刻图案用掩模及其制造方法

    公开(公告)号:US5234781A

    公开(公告)日:1993-08-10

    申请号:US877396

    申请日:1992-04-30

    IPC分类号: G03F1/20

    CPC分类号: G03F1/20

    摘要: A mask for lithographic patterning comprises a base body provided with a through hole passing from a top side to a bottom side thereof, a mask layer provided on the top side of the base body so as to close the through hole, the mask layer being defined by a substantially flat top surface and a substantially flat bottom surface and having a thickness ranging from about 2 .mu.m to about 20 .mu.m, and a plurality of patterned apertures provided on the mask layer at a part closing the through hole.

    摘要翻译: 用于平版印刷图案的掩模包括设置有从顶侧到底侧的通孔的基体,设置在基体的顶侧上以封闭通孔的掩模层,掩模层被限定 通过基本上平坦的顶表面和基本上平坦的底表面并且具有约2μm至约20μm的厚度,以及在封闭通孔的部分处在掩模层上设置的多个图案孔。

    Fabrication method for semiconductor devices and transparent mask for
charged particle beam
    34.
    发明授权
    Fabrication method for semiconductor devices and transparent mask for charged particle beam 失效
    半导体器件的制造方法和带电粒子束的透明掩模

    公开(公告)号:US5036209A

    公开(公告)日:1991-07-30

    申请号:US424733

    申请日:1989-10-20

    摘要: A charged particle beam exposure apparatus includes a charged particle beam generator, a deflector device for deflecting the charged particle beam electromagnetically to individually illuminate small areas of a pattern forming region formed on a transparent mask, apparatus for moving the transparent mask mechanically, and the various components required for reducing the charged particle beam pattern through the mask and projecting the same onto a semiconductor device substrate to be exposed. A semiconductor device is fabricated using such apparatus by moving the mask mechanically to position a pattern forming region at a predetermined exposure position. The pattern forming region includes a plurality of small areas which can be individually selected by deflecting the charged particle beam when the pattern forming region is positioned at the exposure position. Each individual area is of a size such that the entirety thereof is exposed when the beam is deflected onto such area.

    摘要翻译: 在带电粒子束曝光装置中,包括用于产生带电粒子束(20)的装置(21-23),用于电磁地偏转带电粒子束(20)的偏转装置(24)并照射多个 构成形成在透明掩模(26)上的多个聚集隔板(27)的一个聚集隔板(27)的小隔板(28); 用于机械地移动透明掩模(26)的掩模移动装置和用于减小通过掩模(26)图案化的带电粒子束(20)的减少曝光装置(30-34),并将其暴露于半导体器件(35)上 ),制造半导体器件(35)的方法包括以下步骤:通过掩模移动装置将多个聚集隔板(27)中的一个聚集隔板(27)移动到预定位置; 通过所述偏转装置(24)从所述移动的聚集隔板(27)的所述多个小隔板(28)中选择一个小隔板(28); 并且通过所述还原曝光装置(30-34)减小所选择的小分区(28)并将其暴露在所述半导体器件(35)上。

    Electron beam exposure system having the capability of checking the
pattern of an electron mask used for shaping an electron beam
    36.
    发明授权
    Electron beam exposure system having the capability of checking the pattern of an electron mask used for shaping an electron beam 失效
    具有检查用于成形电子束的电子掩模的图案的能力的电子束曝光系统

    公开(公告)号:US5180919A

    公开(公告)日:1993-01-19

    申请号:US761454

    申请日:1991-09-18

    IPC分类号: H01J37/304 H01J37/317

    摘要: An electron beam exposure system having a capability of checking a pattern to be written on an object comprises an electron beam source for producing an electron beam along an optical axis toward the object, a block mask provided on the optical axis and having selectable aperture patterns therein for correspondingly shaping the electron beam, an addressing deflector fixture for selectively passing the electron beam through a desired aperture on the block mask, an electron optical system for focusing the electron beam shaped by the block mask on the object such that an image of the aperture of the block mask is projected on the object, a screen provided along the optical axis between the block mask and the object for interrupting the electron beam when the electron beam is offset from the alignment with the optical axis, the screen having a through-hole in alignment with the optical axis for passing the electron beam therethrough a controller for controlling the electron optical system such that an image of the aperture of the beam shaping means through which the electron beam has passed is projected on the screen when checking the pattern of the apertures on the block mask, and a detection unit for detecting the image of the aperture that is projected on the screen.

    摘要翻译: 具有检查要写在物体上的图案的能力的电子束曝光系统包括用于沿着光轴向物体产生电子束的电子束源,设置在光轴上并具有可选孔径图案的块掩模 为了对应地形成电子束,用于选择性地使电子束通过块掩模上的所需孔的寻址偏转器固定装置,用于将由掩模掩模形成的电子束聚焦在物体上的电子光学系统,使得孔径的图像 块屏蔽物投影在物体上,当电子束偏离与光轴对准时,沿着光轴设置在屏蔽掩模和物体之间的屏幕,用于中断电子束,屏幕具有通孔 与用于使电子束通过的光轴对准用于控制电子光学系统的控制器 使得当检查块掩模上的孔的图案时,电子束已经通过的光束整形装置的孔径的图像被投影在屏幕上;以及检测单元,用于检测投影的光圈的图像 屏幕上。

    Electron beam exposure system with increased efficiency of exposure
operation
    37.
    发明授权
    Electron beam exposure system with increased efficiency of exposure operation 失效
    电子束曝光系统具有更高的曝光效率

    公开(公告)号:US5175435A

    公开(公告)日:1992-12-29

    申请号:US782251

    申请日:1991-10-25

    IPC分类号: H01L21/027 H01J37/302

    摘要: An electron beam exposure system comprises a pattern data generator for producing first pattern data indicative of a desired pattern of electron beam to be written on a wafer and second pattern data indicative of the number of repetitions of the pattern specified by the first pattern data, as a time sequential mixture of the first and second pattern data. The time sequential mixture of the data is sorted in a data sorting unit into a parallel data of the first pattern data and the second pattern data. Then, a discrimination is made whether the data is the first pattern data or the second pattern data, and when the data is the second pattern data, the data that follows immediately behind the second pattern data is transferred to an output path simultaneously with the second pattern data, which is transferred to another output path. Thereby, the first and second pattern data form a parallel data. The parallel data thus formed is next compressed by deleting the data, that follows immediately behind the data which contains the second pattern data, from both output paths.

    摘要翻译: 电子束曝光系统包括图形数据发生器,用于产生指示要写入晶片的电子束的期望图案的第一图案数据和指示由第一图案数据指定的图案的重复次数的第二图案数据, 第一和第二图案数据的时间顺序混合。 将数据的时间序列混合在数据排序单元中排列成第一图案数据和第二图案数据的并行数据。 然后,判断数据是第一图案数据还是第二图案数据,并且当数据是第二图案数据时,紧接在第二图案数据之后的数据与第二图案数据同时被传送到输出路径 模式数据,传输到另一个输出路径。 由此,第一和第二图案数据形成并行数据。 这样形成的并行数据接下来通过从两个输出路径中删除紧跟在包含第二模式数据的数据之后的数据来进行压缩。

    Charged particle beam exposure apparatus control system and a method of
operation for providing a drawing start signal
    39.
    发明授权
    Charged particle beam exposure apparatus control system and a method of operation for providing a drawing start signal 失效
    带电粒子束曝光装置控制系统和提供绘图开始信号的操作方法

    公开(公告)号:US5225684A

    公开(公告)日:1993-07-06

    申请号:US948475

    申请日:1992-09-22

    IPC分类号: H01J37/302

    摘要: A charged particle beam exposure system emits and deflects an electron beam (11a) toward a continuously moving exposure object (18) and draws semiconductor integrated circuit patterns on the object. The system comprises a charged particle beam generating unit (11), first and second deflectors (12 and 13) for deflecting the electron beam (11a), first and second deflector drivers (14 and 15) for controlling outputs of the first and second deflectors (12 and 13), a stage driving and controlling unit (16) for controlling the movement of the object (18), and a controller (17) for controlling the inputs and outputs of the respective components. The second deflector driver (15) comprises at least a data correction unit (15A) for receiving main deflector data (MD1) and stage position data (STD) and providing corrected main deflector data (MD2), a deflection signal output unit (15B) for providing a main deflector set signal (S1) according to the main deflector data (MD2), a first wait time generator (15C) for generating a first pulse signal (PS1) according to the main deflector data (MD2), a second wait time generator (15D) for generating a second pulse signal (PS2) in synchronism with the first pulse signal (PS1), and a comparator (15E) for comparing the first and second pulse signals (PS1 and PS2) with each other and providing a drawing start signal (S3).

    摘要翻译: 带电粒子束曝光系统朝向连续移动的曝光物体(18)发射并偏转电子束(11a),并将半导体集成电路图案拉到物体上。 该系统包括带电粒子束产生单元(11),用于偏转电子束(11a)的第一和第二偏转器(12和13),第一和第二偏转器驱动器(14和15),用于控制第一和第二偏转器 (12和13),用于控制物体(18)的移动的平台驱动和控制单元(16),以及用于控制各个部件的输入和输出的控制器(17)。 第二偏转器驱动器(15)至少包括用于接收主偏转器数据(MD1)和平台位置数据(STD)并提供校正的主偏转器数据(MD2)的数据校正单元(15A),偏转信号输出单元(15B) 用于根据主偏转器数据(MD2)提供主偏转器设定信号(S1),用于根据主偏转器数据(MD2)产生第一脉冲信号(PS1)的第一等待时间发生器(15C),第二等待 用于与第一脉冲信号(PS1)同步地产生第二脉冲信号(PS2)的时间发生器(15D)和用于将第一和第二脉冲信号(PS1和PS2)彼此比较的比较器(15E) 绘图开始信号(S3)。