公开(公告)号：US5288567A

公开(公告)日：1994-02-22

申请号：US718433

申请日：1991-06-20

申请人： Kiichi Sakamoto ,  Yasushi Takahashi ,  Yoshihisa Oae ,  Hiroshi Yasuda

发明人： Kiichi Sakamoto ,  Yasushi Takahashi ,  Yoshihisa Oae ,  Hiroshi Yasuda

IPC分类号： H01L21/027 ,  G03F1/20 ,  G03F7/20 ,  H01J37/04 ,  H01J37/317 ,  H01L21/30 ,  G03F9/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  G03F7/2047 ,  H01J37/045 ,  H01J37/3174

摘要： A stencil mask is used for exposing a pattern on a wafer using a charged particle beam which is transmitted through the stencil mask. The stencil mask is made up of a plate, and at least a block pattern region formed on the plate. The block pattern region includes apertures of arbitrary shapes for transmitting the charged particle beam which irradiates the apertures within the block pattern region in one shot of the charged particle beam. The block pattern region forms a block mask in which a pair of confronting blanking electrodes is provided with respect to at least predetermined ones of the apertures.

公开(公告)号：US5180919A

公开(公告)日：1993-01-19

申请号：US761454

申请日：1991-09-18

申请人： Yoshihisa Oae ,  Kiichi Sakamoto ,  Hiroshi Yasuda

发明人： Yoshihisa Oae ,  Kiichi Sakamoto ,  Hiroshi Yasuda

IPC分类号： H01J37/304 ,  H01J37/317

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J37/3174 ,  H01J2237/0451 ,  H01J2237/30455 ,  H01J2237/31776

摘要： An electron beam exposure system having a capability of checking a pattern to be written on an object comprises an electron beam source for producing an electron beam along an optical axis toward the object, a block mask provided on the optical axis and having selectable aperture patterns therein for correspondingly shaping the electron beam, an addressing deflector fixture for selectively passing the electron beam through a desired aperture on the block mask, an electron optical system for focusing the electron beam shaped by the block mask on the object such that an image of the aperture of the block mask is projected on the object, a screen provided along the optical axis between the block mask and the object for interrupting the electron beam when the electron beam is offset from the alignment with the optical axis, the screen having a through-hole in alignment with the optical axis for passing the electron beam therethrough a controller for controlling the electron optical system such that an image of the aperture of the beam shaping means through which the electron beam has passed is projected on the screen when checking the pattern of the apertures on the block mask, and a detection unit for detecting the image of the aperture that is projected on the screen.

摘要翻译： 具有检查要写在物体上的图案的能力的电子束曝光系统包括用于沿着光轴向物体产生电子束的电子束源，设置在光轴上并具有可选孔径图案的块掩模 为了对应地形成电子束，用于选择性地使电子束通过块掩模上的所需孔的寻址偏转器固定装置，用于将由掩模掩模形成的电子束聚焦在物体上的电子光学系统，使得孔径的图像 块屏蔽物投影在物体上，当电子束偏离与光轴对准时，沿着光轴设置在屏蔽掩模和物体之间的屏幕，用于中断电子束，屏幕具有通孔 与用于使电子束通过的光轴对准用于控制电子光学系统的控制器 使得当检查块掩模上的孔的图案时，电子束已经通过的光束整形装置的孔径的图像被投影在屏幕上;以及检测单元，用于检测投影的光圈的图像 屏幕上。

公开(公告)号：US5965895A

公开(公告)日：1999-10-12

申请号：US964331

申请日：1997-11-04

申请人： Takamasa Satoh ,  Hiroshi Yasuda ,  Junichi Kai ,  Yoshihisa Oae ,  Hisayasu Nishino ,  Kiichi Sakamoto ,  Hidefumi Yabara ,  Isamu Seto ,  Masami Takigawa ,  Akio Yamada ,  Soichiro Arai ,  Tomohiko Abe ,  Takashi Kiuchi ,  Kenichi Miyazawa

发明人： Takamasa Satoh ,  Hiroshi Yasuda ,  Junichi Kai ,  Yoshihisa Oae ,  Hisayasu Nishino ,  Kiichi Sakamoto ,  Hidefumi Yabara ,  Isamu Seto ,  Masami Takigawa ,  Akio Yamada ,  Soichiro Arai ,  Tomohiko Abe ,  Takashi Kiuchi ,  Kenichi Miyazawa

IPC分类号： H01J37/153 ,  H01J37/302 ,  H01J37/317

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/153 ,  H01J37/3174 ,  H01J2237/1504

摘要： A method for providing charged particle beam exposure onto an object having a plurality of chip areas with a plurality of aligning marks formed in correspondence to each of said chip areas. A charged particle beam is irradiated upon an object mounted on a mobile step based upon positions of the aligning marks. Actual positions of the alignment marks are detected and compared to the design positions of the alignment marks to determine approximate relationships which are used to calculate an actual position to perform exposure.

摘要翻译： 一种用于向具有多个芯片区域的物体提供带电粒子束曝光的方法，所述多个芯片区域具有与每个所述芯片区域对应形成的多个对准标记。 基于对准标记的位置，将带电粒子束照射在安装在移动台阶上的物体上。 检测对准标记的实际位置并与对准标记的设计位置进行比较，以确定用于计算执行曝光的实际位置的近似关系。

公开(公告)号：US5546319A

公开(公告)日：1996-08-13

申请号：US379712

申请日：1995-01-27

申请人： Takamasa Satoh ,  Hiroshi Yasuda ,  Junichi Kai ,  Yoshihisa Oae ,  Hisayasu Nishino ,  Kiichi Sakamoto ,  Hidefumi Yabara ,  Isamu Seto ,  Masami Takigawa ,  Akio Yamada ,  Soichiro Arai ,  Tomohiko Abe ,  Takashi Kiuchi ,  Kenichi Miyazawa

发明人： Takamasa Satoh ,  Hiroshi Yasuda ,  Junichi Kai ,  Yoshihisa Oae ,  Hisayasu Nishino ,  Kiichi Sakamoto ,  Hidefumi Yabara ,  Isamu Seto ,  Masami Takigawa ,  Akio Yamada ,  Soichiro Arai ,  Tomohiko Abe ,  Takashi Kiuchi ,  Kenichi Miyazawa

IPC分类号： H01J37/153 ,  H01J37/302 ,  H01J37/317 ,  H01J37/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/153 ,  H01J37/3174 ,  H01J2237/1504

摘要： To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and a deflector, a glitch waveform generated during a step change in the output or a D/A converter at the preceding stage of the amplifier, is anticipated and is canceled out with a correction waveform, after the output of the D/A converter has settled, this output is sample held and the step change is interpolated at a smoothing circuit, the deflection area is increased by positioning a electrostatic deflector offset around the optical axis relative to another electrostatic deflector, the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turn, and the alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages or coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.

摘要翻译： 为了提高曝光系统的吞吐量，通过在放大器和偏转器之间切换电阻来减小放大器的输出阶跃变化期间的设定时间，在输出的阶跃变化期间产生的毛刺波形或D / 在放大器的前级的A转换器被预期并且被校正波形抵消，在D / A转换器的输出已经稳定之后，该输出被采样保持，并且在平滑电路中内插步长变化， 通过相对于另一个静电偏转器定位围绕光轴的静电偏转器偏移来增加偏转区域，通过添加一或两匝的辅助偏转线圈来改善主偏转的响应速度，并且通过组合坐标 在晶片区域和芯片区域中的转换。 为了校正电磁透镜的散光，设置两级或线圈，并将与偏转量相对应的电流提供给线圈。

公开(公告)号：US5260579A

公开(公告)日：1993-11-09

申请号：US851400

申请日：1992-03-13

申请人： Hiroshi Yasuda ,  Yasushi Takahashi ,  Kiichi Sakamoto ,  Akio Yamada ,  Yoshihisa Oae ,  Junichi Kai ,  Shunsuke Fueki ,  Kenichi Kawashima

发明人： Hiroshi Yasuda ,  Yasushi Takahashi ,  Kiichi Sakamoto ,  Akio Yamada ,  Yoshihisa Oae ,  Junichi Kai ,  Shunsuke Fueki ,  Kenichi Kawashima

IPC分类号： H01J37/09 ,  H01J37/317 ,  H01J37/302

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/3177 ,  H01J2237/0435

摘要： A charged particle beam exposure system is directed to an exposure process of an electron beam for sequentially scanning an electron beam employing a blanking aperture array including a plurality of blanking apertures. The system facilitates re-focusing for compensation of focus error due to Coulumb effect and makes wiring the blanking aperture array easier. The system further allows exposure without an irradiation gap. The blanking aperture array 6 is formed with a plurality of said blanking apertures 62 arranged in a two-dimensional configuration. A control system 24 controls the blanking aperture array 62 to set the blanking aperture to the ON state where the charged particle beams pass through the blanking aperture and reach the object 19 to be exposed or the OFF state where the charged particle beams cannot reach the object 19 to be exposed. The other control system of the control means performs a control so that a plurality of said charged particle beams that have passed through different blanking apertures of said blanking aperture array overlaps and is irradiated a plurality of times onto the specified position or the peripheral position in the vicinity of the specified position of the object to be exposed to the charged particle beams.

公开(公告)号：US5721432A

公开(公告)日：1998-02-24

申请号：US670256

申请日：1996-06-20

申请人： Takamasa Satoh ,  Hiroshi Yasuda ,  Junichi Kai ,  Yoshihisa Oae ,  Hisayasu Nishino ,  Kiichi Sakamoto ,  Hidefumi Yabara ,  Isamu Seto ,  Masami Takigawa ,  Akio Yamada ,  Soichiro Arai ,  Tomohiko Abe ,  Takashi Kiuchi ,  Kenichi Miyazawa

发明人： Takamasa Satoh ,  Hiroshi Yasuda ,  Junichi Kai ,  Yoshihisa Oae ,  Hisayasu Nishino ,  Kiichi Sakamoto ,  Hidefumi Yabara ,  Isamu Seto ,  Masami Takigawa ,  Akio Yamada ,  Soichiro Arai ,  Tomohiko Abe ,  Takashi Kiuchi ,  Kenichi Miyazawa

IPC分类号： H01J37/153 ,  H01J37/302 ,  H01J37/317

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/153 ,  H01J37/3174 ,  H01J2237/1504

摘要： To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and deflector, a glitch waveform generated during a step change in the output of a D/A converter at the preceding stage of the amplifier, is anticipated and is canceled out with a correction waveform, after the output of the D/A converter has settled, this output is sample held and the step change is interpolated at a smoothing circuit, the deflection area is increased by positioning a electrostatic deflector offset around the optical axis relative to another electrostatic deflector, the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turn, and the alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages of coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.

摘要翻译： 为了提高曝光系统的吞吐量，通过在放大器和偏转器之间的开关电阻来减小放大器的输出的阶跃变化期间的设定时间，在D / A的输出的阶跃变化期间产生的毛刺波形 转换器在放大器的前级被预期并且被校正波形抵消，在D / A转换器的输出已经稳定之后，该输出被采样保持，并且在平滑电路中内插步进变化，偏转 通过相对于另一个静电偏转器定位围绕光轴的静电偏转器偏移来增加面积，通过添加一或两匝的辅助偏转线圈来改善主偏转的响应速度，并且通过组合坐标转换来缩小对准时间 在晶片区域和芯片区域。 为了校正电磁透镜的散光，设置两级线圈，并将与偏转量相对应的电流供给到线圈。

公开(公告)号：US5590048A

公开(公告)日：1996-12-31

申请号：US71262

申请日：1993-06-04

申请人： Tomohiko Abe ,  Hiroshi Yasuda ,  Kiichi Sakamoto ,  Yoshihisa Oae

发明人： Tomohiko Abe ,  Hiroshi Yasuda ,  Kiichi Sakamoto ,  Yoshihisa Oae

IPC分类号： H01J37/302 ,  G06F17/50 ,  G06K9/00

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J2237/0458 ,  H01J2237/31776

摘要： In a block exposure pattern extracting system applied to a charged-particle beam exposure system having a block mask including a plurality of transparent stats having different shapes, a comparator unit compares first vectors connecting one of apexes of an input exposure pattern to other apexes thereof with second vectors connecting a reference point which is one of apexes of a unit block exposure pattern to other apexes of the unit block exposure pattern. A determining unit determines whether or not the first vectors coincide with the second vectors. An extracting unit extracts the input exposure pattern as the unit block exposure pattern when the determining unit determines that the first vectors coincide with the second vectors.

摘要翻译： 在应用于具有包括具有不同形状的多个透明统计数据的块掩模的带电粒子束曝光系统的块曝光图案提取系统中，比较器单元将连接输入曝光图案的顶点之一与其他顶点的第一矢量与 将单位块曝光图案的顶点之一的参考点连接到单位块曝光图案的其他顶点的第二矢量。 确定单元确定第一矢量是否与第二矢量一致。 当确定单元确定第一向量与第二向量一致时，提取单元提取输入的曝光图案作为单位块曝光图案。

公开(公告)号：US5364718A

公开(公告)日：1994-11-15

申请号：US57017

申请日：1993-05-05

申请人： Yoshihisa Oae ,  Kiichi Sakamoto

发明人： Yoshihisa Oae ,  Kiichi Sakamoto

IPC分类号： G03F1/20 ,  G03F7/20 ,  H01J37/302 ,  G03F9/00

CPC分类号： G03F1/20 ,  G03F7/2022 ,  G03F7/70475 ,  H01J37/3026

摘要： A method is provided for exposing a semiconductor device pattern onto a semiconductor substrate by repeatedly exposing an adjoining arrangement of a plurality of unit patterns. The device pattern is first divided into a plurality of unit patterns. Then, a stencil mask is provided with transmitting openings having shapes conforming to the respective unit patterns. Pattern lines on the stencil mask of the unit patterns which are to be connected with each other have at least one connecting end provided with at least one protrusion having a width less than that of the corresponding pattern lines. The protrusion on the connecting end reduces errors such as interruptions or excessive broadening in an exposed pattern line due to misalignment. Also disclosed is a stencil mask for carrying out the present inventive method.

摘要翻译： 提供了一种通过重复暴露多个单元图案的相邻布置来将半导体器件图案暴露于半导体衬底上的方法。 首先将装置图案划分为多个单位图案。 然后，模板掩模设置有具有符合相应单元图案的形状的透光开口。 要连接的单元图案的模板掩模上的图案线具有设置有至少一个具有小于对应图案线的宽度的突起的至少一个连接端。 连接端上的突起由于未对准而减少了暴露图案线中的中断或过度变宽的错误。 还公开了用于实施本发明的方法的模板掩模。

公开(公告)号：US5432314A

公开(公告)日：1995-07-11

申请号：US109263

申请日：1993-08-20

申请人： Satoru Yamazaki ,  Yoshihisa Oae ,  Kiichi Sakamoto ,  Akio Yamada

发明人： Satoru Yamazaki ,  Yoshihisa Oae ,  Kiichi Sakamoto ,  Akio Yamada

IPC分类号： G03F1/20 ,  G03F1/68 ,  G03F7/20 ,  G03F9/00 ,  H01J37/317 ,  H01L21/027 ,  H01J37/04

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F9/70 ,  H01J37/3174 ,  H01J2237/30438 ,  H01J2237/31788 ,  H01J2237/31794

摘要： A transparent mask plate used in a charged particle beam exposure apparatus includes a base plate, an exposure pattern area, and a calibration area. The exposure pattern area is formed in the base plate and has a plurality of transparent patterns for shaping a cross section of a charged particle beam into a block pattern. The calibration area is formed in the base plate, and has a plurality of transparent patterns used for obtaining a condition for deflecting the charged particle beam. The plurality of transparent patterns formed in the calibration area are arranged at the same pitch as the plurality of transparent patterns formed in the exposure pattern area. Each of the plurality of transparent patterns formed in the calibration area corresponds to one of the plurality of transparent patterns formed in the exposure pattern area.

摘要翻译： 在带电粒子束曝光装置中使用的透明掩模板包括基板，曝光图案区域和校准区域。 曝光图案区域形成在基板中，并且具有多个透明图案，用于将带电粒子束的横截面成形为块图案。 校准区域形成在基板中，并且具有用于获得用于偏转带电粒子束的条件的多个透明图案。 形成在校准区域中的多个透明图案以与形成在曝光图案区域中的多个透明图案相同的间距排列。 形成在校准区域中的多个透明图案中的每一个对应于在曝光图案区域中形成的多个透明图案中的一个。

公开(公告)号：US5401974A

公开(公告)日：1995-03-28

申请号：US191458

申请日：1994-02-03

申请人： Yoshihisa Oae ,  Takamasa Satoh ,  Yasushi Takahashi ,  Kiichi Sakamoto ,  Hiroshi Yasuda ,  Soichiro Arai ,  Moritaka Nakamura

发明人： Yoshihisa Oae ,  Takamasa Satoh ,  Yasushi Takahashi ,  Kiichi Sakamoto ,  Hiroshi Yasuda ,  Soichiro Arai ,  Moritaka Nakamura

IPC分类号： H01J37/30 ,  H05H1/00

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3002 ,  H01J37/32082 ,  H01J37/32862 ,  H01J2237/022 ,  H01J2237/3175

摘要： In a charged particle beam exposure apparatus in which a charged particle beam is projected onto a member to be exposed to thereby form a pattern thereon, there are provided a plurality of electrodes disposed around an optical axis of the charged particle beam, a first unit for introducing a gas containing oxygen as a main component into an inside of the charged particle beam exposure apparatus including the plurality of electrodes and for holding the inside of the apparatus at a degree of vacuum between 0.1 Torr and 4 Torr, and a second unit for selectively applying either a high-frequency signal having a frequency between 100 kHz and 800 kHz or a reference signal to each of the plurality of electrodes. A plasma radical state of the gas is generated in the inside of the apparatus so that a deposition present in the apparatus can be eliminated.

摘要翻译： 在带电粒子束曝光装置中，带电粒子束投射到待暴露的构件上，从而在其上形成图案，设置有围绕带电粒子束的光轴设置的多个电极，第一单元， 将含有氧的气体作为主要成分引入到包括多个电极的带电粒子束曝光设备的内部，并将设备内部保持在0.1托和4托之间的真空度，以及用于选择性地将第二单元 将频率在100kHz和800kHz之间的高频信号或参考信号施加到多个电极中的每一个。 在装置的内部产生气体的等离子体自由基状态，从而可以消除装置中存在的沉积物。