公开(公告)号：US20120200641A1

公开(公告)日：2012-08-09

申请号：US13357857

申请日：2012-01-25

申请人： Toru Yamane ,  Tomoyuki Inoue ,  Eisuke Nishitani ,  Kenji Yabe ,  Atsushi Sakamoto

发明人： Toru Yamane ,  Tomoyuki Inoue ,  Eisuke Nishitani ,  Kenji Yabe ,  Atsushi Sakamoto

IPC分类号： B41J2/05

CPC分类号： B41J2/1404 ,  B41J2002/14169 ,  B41J2002/14185 ,  B41J2002/14387

摘要： A liquid ejection head including an ejection orifice for ejecting a liquid; a flow path for supplying the liquid from a liquid supply port holding the liquid to the ejection orifice; and a heat generating element of a rectangular form with a long-side to short-side ratio of 2.5 or more for generating thermal energy used to eject the liquid, a longitudinal direction of the heat generating element being arranged along an extending direction of the flow path. An end portion of the heat generating element on a downstream side of a liquid flowing direction within the flow path is located between an end portion of the ejection orifice on the downstream side and an end portion of the ejection orifice on an upstream side when viewed from a direction to which the liquid is ejected from the ejection orifice.

摘要翻译： 一种液体喷射头，包括用于喷射液体的喷射孔; 用于将液体从保持液体的液体供给口供给到喷射口的流路; 以及长边与短边比为2.5以上的发热元件，用于产生用于喷射液体的热能，所述发热元件的纵向方向沿着流动的延伸方向布置 路径。 在流路内的液体流动方向的下游侧的发热元件的端部位于下游侧的喷射孔的端部与上游侧的喷射孔的端部之间，当从 液体从喷射口喷出的方向。

公开(公告)号：US08205979B2

公开(公告)日：2012-06-26

申请号：US12636109

申请日：2009-12-11

申请人： Eisuke Nishitani ,  Toru Yamane ,  Tomoyuki Inoue ,  Ken Tsuchii

发明人： Eisuke Nishitani ,  Toru Yamane ,  Tomoyuki Inoue ,  Ken Tsuchii

IPC分类号： B41J2/175 ,  B41J2/15 ,  B41J2/14 ,  B41J2/05

CPC分类号： B41J2/17563 ,  B41J2/1404 ,  B41J2/1433 ,  B41J2002/14475

摘要： A liquid ejection head includes ejection orifices allowing liquid to be ejected therethrough, passages communicating with the ejection orifices and the pressure chambers each accommodating an energy generating element generating energy for ejecting the liquid therein, a supply port supplying the liquid to the passages, and a filter including substantially cylindrical members between the supply port and passages and having openings. Each of the ejection orifices has a substantially circular cross section having larger and smaller diameters substantially perpendicularly to its liquid ejecting direction. Each of the openings has a substantially rectangular cross section having longer and shorter sides substantially perpendicularly to its liquid supplying direction. The relationships D1>L1, D1 L2≧D1 are satisfied where D1 is the smaller diameter, D2 is the larger diameter, L1 is the shorter side, and L2 is the longer side.

摘要翻译： 液体喷射头包括允许液体喷射通过的喷射孔，与喷射孔连通的通道和每个容纳能量产生元件的压力室，所述能量产生元件产生用于在其中喷射液体的能量产生元件，将液体供应到通道，以及 过滤器包括在供给口和通道之间并具有开口的基本上圆柱形的构件。 每个喷射孔具有基本上圆形的横截面，其具有大致垂直于其液体喷射方向的更大和更小的直径。 每个开口具有基本上矩形的横截面，其具有基本垂直于其液体供应方向的较短和短边。 满足关系D1> L1，D1 L2≥D1，其中D1是较小的直径，D2是较大的直径，L1是较短的一侧，L2是较长的一侧。

公开(公告)号：US20120113197A1

公开(公告)日：2012-05-10

申请号：US13287402

申请日：2011-11-02

申请人： Ryota Kashu ,  Naoto Sasagawa ,  Seiichiro Karita ,  Takatsuna Aoki ,  Shingo Okushima ,  Eisuke Nishitani

发明人： Ryota Kashu ,  Naoto Sasagawa ,  Seiichiro Karita ,  Takatsuna Aoki ,  Shingo Okushima ,  Eisuke Nishitani

IPC分类号： B41J2/18

CPC分类号： B41J2/18 ,  B41J2/1404 ,  B41J2/14233 ,  B41J2/1433 ,  B41J2/145 ,  B41J2202/12

摘要： A recording apparatus including an ink tank and a recording head having a flow path forming portion that has an ejection orifice plate having plural ink ejection orifices and a liquid chamber provided for each orifice to supply ink to the orifices, and an energy generating element for ejecting ink in the chamber. A surface layer of the flow path forming portion opposes to the outside of the plate. An opening is provided opposing to the orifices in the surface layer. An ink reservoir is provided between the plate and the opening. A circulation flow path communicating with the ink reservoir is provided. The area of the opening is larger than that of the orifice. Both ends of the circulation flow path are respectively connected to inlet and outlet portions connected to the circulation flow path. The inlet and outlet portions and liquid chamber are connected to the ink tank.

摘要翻译： 一种记录装置，包括墨盒和具有流路形成部分的记录头，该流路形成部具有具有多个墨喷射口的喷射孔板和为每个喷孔设置的用于向喷嘴供应墨水的液体室，以及用于喷射的能量产生元件 墨水在室内。 流路形成部的表面层与板的外侧相反。 提供与表面层中的孔相对的开口。 在所述板和所述开口之间设置有墨水储存器。 提供与墨水容器连通的循环流路。 开口面积大于孔口面积。 循环流路的两端分别与连接于循环流路的入口部和出口部连接。 入口和出口部分和液体室连接到墨水罐。

公开(公告)号：US07049187B2

公开(公告)日：2006-05-23

申请号：US10468441

申请日：2001-10-31

申请人： Naoki Yamamoto ,  Hiroyuki Uchiyama ,  Norio Suzuki ,  Eisuke Nishitani ,  Shin'ichiro Kimura ,  Kazuyuki Hozawa

发明人： Naoki Yamamoto ,  Hiroyuki Uchiyama ,  Norio Suzuki ,  Eisuke Nishitani ,  Shin'ichiro Kimura ,  Kazuyuki Hozawa

IPC分类号： H01L22/336 ,  H01L22/8234

CPC分类号： H01L21/28194 ,  H01L21/02057 ,  H01L21/02068 ,  H01L21/02071 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/28061 ,  H01L21/28176 ,  H01L21/28247 ,  H01L21/31662 ,  H01L21/67115 ,  H01L21/76838 ,  H01L21/823437 ,  H01L21/84 ,  H01L27/10814 ,  H01L27/10873 ,  H01L27/10894 ,  H01L27/1214 ,  H01L29/4941 ,  H01L29/518

摘要： When an oxidation treatment for regenerating a gate insulating film 6 is performed after forming gate electrodes 7A of a polymetal structure in which a WNx film and a W film are stacked on a polysilicon film, a wafer 1 is heated and cooled under conditions for reducing a W oxide 27 on the sidewall of each gate electrode 7A. As a result, the amount of the W oxide 27 to be deposited on the surface of the wafer 1 is reduced.

公开(公告)号：US20060009046A1

公开(公告)日：2006-01-12

申请号：US11198858

申请日：2005-08-08

申请人： Naoki Yamamoto ,  Hiroyuki Uchiyama ,  Norio Suzuki ,  Eisuke Nishitani ,  Shin'ichiro Kimura ,  Kazuyuki Hozawa

发明人： Naoki Yamamoto ,  Hiroyuki Uchiyama ,  Norio Suzuki ,  Eisuke Nishitani ,  Shin'ichiro Kimura ,  Kazuyuki Hozawa

IPC分类号： H01L21/4763 ,  H01L21/31

CPC分类号： H01L21/28194 ,  H01L21/02057 ,  H01L21/02068 ,  H01L21/02071 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/28061 ,  H01L21/28176 ,  H01L21/28247 ,  H01L21/31662 ,  H01L21/67115 ,  H01L21/76838 ,  H01L21/823437 ,  H01L21/84 ,  H01L27/10814 ,  H01L27/10873 ,  H01L27/10894 ,  H01L27/1214 ,  H01L29/4941 ,  H01L29/518

摘要： When an oxidation treatment for regenerating a gate insulating film 6 is performed after forming gate electrodes 7A of a polymetal structure in which a WNx film and a W film are stacked on a polysilicon film, a wafer 1 is heated and cooled under conditions for reducing a W oxide 27 on the sidewall of each gate electrode 7A. As a result, the amount of the W oxide 27 to be deposited on the surface of the wafer 1 is reduced.

摘要翻译： 当在多晶硅膜上堆叠WN薄膜和W膜的多金属结构的栅极电极7A之后进行用于再生栅极绝缘膜6的氧化处理时，晶片1 在用于还原每个栅电极7A的侧壁上的W氧化物27的条件下被加热和冷却。结果，沉积在晶片1的表面上的W氧化物27的量减少。

公开(公告)号：US06514869B2

公开(公告)日：2003-02-04

申请号：US09924538

申请日：2001-08-09

申请人： Tetsuya Wada ,  Toshimitsu Miyata ,  Eisuke Nishitani

发明人： Tetsuya Wada ,  Toshimitsu Miyata ,  Eisuke Nishitani

IPC分类号： H01L21311

CPC分类号： C23C16/45565 ,  C23C16/40 ,  C23C16/4408 ,  C23C16/4557 ,  C23C16/46 ,  H01L21/67109

摘要： In a semiconductor device manufacturing method for processing a plurality of substrates by alternately repeating a pretreatment stage and a continuous substrate processing stage, the continuous substrate processing stage comprises the steps of: loading a substrate on a heater unit located at a substrate loading/unloading position, the heater unit supporting and heating the substrate; processing the loaded substrate after transferring the heater unit having thereon the loaded substrate to a substrate processing position; unloading the processed substrate; and repeating the loading step, the processing step and the unloading step until a set of substrates are processed, and wherein the pretreatment stage is carried out by maintaining the heater unit between the substrate loading/unloading position and the substrate processing position.

摘要翻译： 在通过交替重复预处理阶段和连续衬底处理阶段来处理多个衬底的半导体器件制造方法中，连续衬底处理阶段包括以下步骤：将衬底加载在位于衬底装载/卸载位置的加热器单元 所述加热器单元支撑并加热所述基板; 在将其上装载有衬底的加热器单元传送到衬底处理位置之后处理加载的衬底; 卸载经处理的基板; 并且重复加载步骤，处理步骤和卸载步骤直到处理一组基板，并且其中通过将加热器单元保持在基板装载/卸载位置和基板处理位置之间来执行预处理阶段。