公开(公告)号：US20220363064A1

公开(公告)日：2022-11-17

申请号：US17647820

申请日：2022-01-12

Applicant: Applied Materials, Inc.

Inventor： Daihua ZHANG ,  Ludovic Godet ,  Michael David-Scott Kemp ,  Kang Luo ,  Kazuya Daito ,  Kenneth S. Ledford ,  Bahubali S. Upadhye ,  Hemantha Raju ,  John Rusconi ,  Elsa Massonneau ,  Mahendran Chidambaram ,  Alexey Stepanov ,  Visweswaren Sivaramakrishnan

IPC: B41J2/175

Abstract: Embodiments described herein relate to an inkjet printing platform. The inkjet printing platform is utilized for fabrication of optical films and optical device structures. The inkjet printing platform includes a transfer chamber, one or more inkjet chambers, a plurality of auxiliary modules, a substrate flipper, and load ports. The inkjet printing platform is operable to perform an inkjet printing process on a substrate to form an optical film and/or an optical device.

公开(公告)号：US20220285129A1

公开(公告)日：2022-09-08

申请号：US17684911

申请日：2022-03-02

Applicant: Applied Materials, Inc.

Inventor： Abhijeet Laxman Sangle ,  Nilesh Patil ,  Vijay Bhan Sharma ,  Visweswaren Sivaramakrishnan

IPC: H01J37/32 ,  H01J37/34 ,  C23C14/34 ,  C23C14/08

Abstract: A vapor deposition system and methods of operation thereof are disclosed. The vapor deposition system includes a vacuum chamber; a dielectric target within the vacuum chamber, the dielectric target having a front surface and a thickness; a substrate support within the vacuum chamber, the substrate support having a front surface spaced from the front surface of the dielectric target to form a process gap; and a signal generator connected to the dielectric target to generate a plasma in the vacuum chamber, the signal generator comprises a power source, the power source configured to prevent charge accumulation in the dielectric target. The method includes applying power to a dielectric target within a vacuum chamber to generate a plasma in a process gap between the dielectric target and a substrate support and pulsing the power applied to the dielectric target to prevent charge accumulation.

公开(公告)号：US10094486B2

公开(公告)日：2018-10-09

申请号：US14932384

申请日：2015-11-04

Applicant: Applied Materials, Inc.

Inventor： Ramprakash Sankarakrishnan ,  Dale R. Du Bois ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad

IPC: F16K31/08 ,  F16K1/22 ,  F16K31/06 ,  B08B5/00 ,  C23C16/44 ,  C23C16/455 ,  B08B7/00

Abstract: A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.