公开(公告)号：US07691724B2

公开(公告)日：2010-04-06

申请号：US12076422

申请日：2008-03-18

申请人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Shoji Akiyama

发明人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Shoji Akiyama

IPC分类号： H01L21/30

CPC分类号： H01L21/76254 ,  H01L21/2007 ,  H01L29/78603

摘要： A method for manufacturing an SOI substrate, including the steps of implanting hydrogen ions from a main surface of a single-crystal silicon substrate having an interstitial oxygen concentration which is equal to or below 1×1018 cm−3; performing an activation treatment with respect to the main surface of at least one of a transparent insulative substrate and the silicon substrate; bonding the main surface of the transparent insulative substrate to the main surface of the silicon substrate at a room temperature; performing a heat treatment with respect to the bonded substrate at a temperature falling within the range of 350° C. to 550° C. and having a cooling rate after the heat treatment that is equal to or below 5° C./minute; and mechanically delaminating a silicon thin film from the silicon substrate to form a silicon film on the main surface of the transparent insulative substrate.

摘要翻译： 一种用于制造SOI衬底的方法，包括以下步骤：从具有等于或低于1×10 18 cm -3的间隙氧浓度的单晶硅衬底的主表面注入氢离子; 对透明绝缘基板和硅基板中的至少一个的主表面进行激活处理; 在室温下将透明绝缘性基板的主面与硅基板的主面接合; 在350℃〜550℃的范围内进行相对于键合基板的热处理，并且具有等于或低于5℃/分钟的热处理后的冷却速度; 并从硅衬底机械分层硅薄膜，以在透明绝缘衬底的主表面上形成硅膜。

公开(公告)号：US20080254595A1

公开(公告)日：2008-10-16

申请号：US12076422

申请日：2008-03-18

申请人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Shoji Akiyama

发明人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Shoji Akiyama

IPC分类号： H01L21/30

CPC分类号： H01L21/76254 ,  H01L21/2007 ,  H01L29/78603

摘要： An SOI substrate having no worry about a fluctuation in electrical characteristics due to generation of oxygen donors is provided.A silicon substrate 10 used for bonding is a single-crystal Si substrate in which an interstitial oxygen concentration measured by infrared absorption spectrophotometry is equal to or below 1×1018 cm−3. The interstitial oxygen concentration of the single-crystal silicon substrate is set to 1×1018 cm−3 or below since a degree of formation of oxygen donors is strongly dependent on the interstitial oxygen concentration. When the interstitial oxygen concentration of the crystal silicon substrate is set to 1×1018 cm−3 or below, a fluctuation in electrical characteristics (a resistivity) of a silicon layer (an SOI layer) of an SOI substrate can be suppressed to a practically problem-free level. Such a single-crystal silicon substrate can be readily obtained by an MCZ method that can control a convection of a silicon melt by applying a magnetic field or an FZ method that uses no quartz crucible.

摘要翻译： 提供了由于氧供体的产生而不担心电特性波动的SOI衬底。 用于结合的硅衬底10是其中通过红外吸收分光光度法测量的间隙氧浓度等于或低于1×10 18 cm -3的单晶Si衬底。 单晶硅衬底的间隙氧浓度设定为1×10 8 -3 -3以下，因为供氧体的形成强度依赖于间隙氧 浓度。 当晶体硅衬底的间隙氧浓度设定为1×10 -3 -3 -3以下时，硅层的电特性（电阻率）的波动（ SOI层）可以被抑制到几乎无问题的水平。 这样的单晶硅衬底可以通过MCZ方法容易地获得，MCZ方法可以通过施加磁场或不使用石英坩埚的FZ方法来控制硅熔体的对流。

公开(公告)号：US20080153272A1

公开(公告)日：2008-06-26

申请号：US11987794

申请日：2007-12-04

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： H01L21/425 ,  H01L21/42

CPC分类号： H01L21/76254

摘要： The present invention enables reducing a temperature in a manufacturing process of an SOI substrate.A hydrogen ion is implanted into a surface of a single-crystal Si substrate 10 via an oxide film 11 to form a uniform ion implantation layer 12 at a predetermined depth near a surface of the single-crystal Si Substrate 10. At this time, ion implantation is carried out under a condition that a temperature of the Si substrate 10 is maintained so as not to exceed 400° C. Subsequently, a heat treatment is performed with respect to the single-crystal Si substrate 10 at a temperature of 400° C. or below. This heat treatment is effected to weaken mechanical strength of an “implantation interface” of the ion implantation layer 12 in advance prior to a delamination step, and the heat treatment temperature is set to 400° C. or below in order to suppress occurrence of “micro cavities” and “air bubble growth”. A plasma treatment or an ozone treatment is carried out to joint surfaces of both substrates, and an external impact shock is given in a state where the substrates are bonded to each other to mechanically delaminate a silicon film 13 from a bulk 14 of the single-crystal silicon, thereby obtaining an SOI film 13 provided on a quartz substrate 20 via the oxide film 11.

摘要翻译： 本发明能够降低SOI衬底的制造工艺中的温度。 通过氧化膜11将氢离子注入单晶Si衬底10的表面，以在单晶Si衬底10的表面附近的预定深度处形成均匀的离子注入层12。 此时，在将Si衬底10的温度保持为不超过400℃的条件下进行离子注入。随后，对于单晶Si衬底10进行热处理 温度在400℃以下。 进行这种热处理以在分层步骤之前预先减弱离子注入层12的“注入界面”的机械强度，并且将热处理温度设定为400℃或更低，以便抑制“ 微腔“和”气泡生长“。 对两个基板的接合表面进行等离子体处理或臭氧处理，并且在基板彼此接合的状态下给出外部冲击冲击，以使硅膜13与单芯片14的本体14机械地分层。 从而获得经由氧化物膜11设置在石英衬底20上的SOI膜13。

公开(公告)号：US20080121278A1

公开(公告)日：2008-05-29

申请号：US11984182

申请日：2007-11-14

申请人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

发明人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

IPC分类号： H01L31/04 ,  B05D5/12 ,  H01L31/0216

CPC分类号： H01L31/1804 ,  H01L31/022441 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/0682 ,  H01L31/1892 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

摘要： There is disclosed a method for manufacturing a single crystal silicon solar cell includes the steps of: implanting hydrogen ions or rare gas ions to a single crystal silicon substrate; performing surface activation on at least one of an ion-implanted surface of the single crystal silicon substrate and a surface of a transparent insulator substrate; bonding the ion-implanted surface of the single crystal silicon substrate and the transparent insulator substrate with the surface-activated surface being set as a bonding surface; applying an impact onto the ion implanted layer to mechanically delaminate the single crystal silicon substrate to form a single crystal silicon layer; forming a plurality of diffusion regions having a second conductivity type on the delaminated plane side of the single crystal silicon layer; forming a plurality of first conductivity type regions and a plurality of second conductivity type regions on the delaminated plane of the single crystal silicon layer; and forming a light reflection film that covers the plurality of first conductivity type regions and the plurality of second conductivity type regions. There can be provided an optical confinement type single crystal silicon solar cell where a thin-film light conversion layer is made of high-crystallinity single crystal silicon.

摘要翻译： 公开了一种用于制造单晶硅太阳能电池的方法，包括以下步骤：将氢离子或稀有气体离子注入单晶硅衬底; 在单晶硅衬底的离子注入表面和透明绝缘体衬底的表面中的至少一个上进行表面活化; 将所述单晶硅衬底的离子注入表面和所述透明绝缘体衬底接合，所述表面激活表面被设置为接合表面; 对离子注入层施加冲击以机械地分层单晶硅衬底以形成单晶硅层; 在单晶硅层的分层平面侧形成具有第二导电类型的多个扩散区; 在单晶硅层的分层面上形成多个第一导电型区域和多个第二导电型区域; 以及形成覆盖所述多个第一导电类型区域和所述多个第二导电类型区域的光反射膜。 可以提供一种光限制型单晶硅太阳能电池，其中薄膜光转换层由高结晶度单晶硅制成。

公开(公告)号：US20080113489A1

公开(公告)日：2008-05-15

申请号：US11979446

申请日：2007-11-02

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： H01L21/30

CPC分类号： H01L21/76254 ,  H01L27/1266 ,  H01L29/78603

摘要： Hydrogen ions are implanted to a surface (main surface) of the single crystal Si substrate 10 at a dosage of 1.5×1017 atoms/cm2 or higher to form the hydrogen ion implanted layer (ion-implanted damage layer) 11. As a result of the hydrogen ion implantation, the hydrogen ion implanted boundary 12 is formed. The single crystal Si substrate 10 and the low melting glass substrate 20 are bonded together. The bonded substrate is heated at relatively low temperature, 120° C. or higher and 250° C. or lower (below a melting point of the support substrate). Further, an external shock is applied to delaminate the Si crystal film along the hydrogen ion implanted boundary 12 of the single crystal Si substrate 10 out of the heat-treated bonded substrate. Then, the surface of the resultant silicon thin film 13 is polished to remove a damaged portion, so that a semiconductor substrate can be fabricated. There can be provided a semiconductor substrate in which a high-quality silicon thin film is transferred onto a substrate made of a low melting point material.

摘要翻译： 将氢离子以1.5×10 17原子/ cm 2以上的剂量注入单晶Si衬底10的表面（主表面）以形成氢离子 注入层（离子注入损伤层）11。 作为氢离子注入的结果，形成氢离子注入边界12。 单晶Si衬底10和低熔点玻璃衬底20结合在一起。 键合衬底在相对较低的温度，120℃或更高和250℃或更低（低于支撑衬底的熔点）下加热。 此外，施加外部冲击以沿着经热处理的键合衬底的单晶Si衬底10的氢离子注入边界12将Si晶体膜分层。 然后，对所得的硅薄膜13的表面进行抛光以去除损坏部分，从而可以制造半导体衬底。 可以提供一种半导体衬底，其中将高质量的硅薄膜转移到由低熔点材料制成的衬底上。

公开(公告)号：US20080099066A1

公开(公告)日：2008-05-01

申请号：US11976021

申请日：2007-10-19

申请人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

发明人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

IPC分类号： B05D5/12 ,  H01L31/00

CPC分类号： H01L31/068 ,  H01L31/022466 ,  H01L31/1884 ,  H01L31/1896 ,  Y02B10/10 ,  Y02E10/547

摘要： There is disclosed a method for producing a single crystal silicon solar cell comprising the steps of: implanting at least one of hydrogen ions or rare gas ions into a single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; closely contacting the single crystal silicon substrate and a transparent insulator substrate with each other via a transparent electroconductive adhesive while using the ion implanting surface as a bonding surface; curing and maturing the transparent electroconductive adhesive into a transparent electroconductive film, to bond the single crystal silicon substrate and the transparent insulator substrate to each other; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate thereat to leave a single crystal silicon layer; and forming a p-n junction in the single crystal silicon layer. There can be provided a single crystal silicon solar cell where a light conversion layer is provided as a thin-film for effective utilization of silicon as a starting material of the silicon solar cell, which single crystal silicon solar cell is excellent in conversion characteristics and is less in degradation due to light irradiation, and which single crystal silicon solar cell is provided as a see-through type solar cell that is usable as a natural lighting window material of a house or the like.

摘要翻译： 公开了一种用于制造单晶硅太阳能电池的方法，包括以下步骤：通过离子注入表面将氢离子或稀有气体离子中的至少一种注入到单晶硅衬底中以在单晶硅衬底中形成离子注入层 晶体硅衬底; 通过透明导电粘合剂将单晶硅衬底和透明绝缘体衬底彼此紧密接触，同时使用离子注入表面作为结合表面; 将透明导电粘合剂固化并熟化成透明导电膜，将单晶硅衬底和透明绝缘体衬底彼此接合; 对离子注入层施加冲击以在其上机械分层单晶硅衬底以留下单晶硅层; 并在单晶硅层中形成p-n结。 可以提供一种单晶硅太阳能电池，其中提供光转换层作为有效利用硅作为硅太阳能电池的起始材料的薄膜，该单晶硅太阳能电池的转换特性优异，并且是 由于光照射而导致的劣化较少，并且提供单晶硅太阳能电池作为可用作房屋等的自然采光窗材料的透明型太阳能电池。

公开(公告)号：US20110244654A1

公开(公告)日：2011-10-06

申请号：US13115441

申请日：2011-05-25

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

IPC分类号： H01L21/301

CPC分类号： H01L21/76254 ,  C30B33/04 ,  H01L21/265

摘要： A nitride-based semiconductor crystal and a second substrate are bonded together. In this state, impact is applied externally to separate the low-dislocation density region of the nitride-based semiconductor crystal along the hydrogen ion-implanted layer, thereby transferring (peeling off) the surface layer part of the low-dislocation density region onto the second substrate. At this time, the lower layer part of the low-dislocation density region stays on the first substrate without being transferred onto the second substrate. The second substrate onto which the surface layer part of the low-dislocation density region has been transferred is defined as a semiconductor substrate available by the manufacturing method of the present invention, and the first substrate on which the lower layer part of the low-dislocation density region stays is reused as a substrate for epitaxial growth.

摘要翻译： 氮化物类半导体晶体和第二基板结合在一起。 在这种状态下，外部施加冲击以沿着氢离子注入层分离氮化物基半导体晶体的低位错密度区域，从而将低位错密度区域的表面层部分转移（剥离）到 第二基板。 此时，低位错密度区域的下层部分停留在第一基板上，而不会转移到第二基板上。 将低位错密度区域的表面层部分转印到其上的第二基板被定义为可通过本发明的制造方法获得的半导体基板，并且第一基板在其上具有低位错层的下层部分 密度区域残留被重新用作外延生长的衬底。

公开(公告)号：US07972937B2

公开(公告)日：2011-07-05

申请号：US12230984

申请日：2008-09-09

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

IPC分类号： H01L21/322

CPC分类号： H01L21/76254

摘要： An object of the present invention is to provide a method by which bonding at a low temperature is possible and an amount of metal contaminants in an SOI film is decreased. An embodiment of the present invention is realized in the following manner. A single crystal silicon substrate 10 surface-activated by a plasma-treatment and a quartz substrate 20 are bonded together at a low temperature, to which an external impact is given to mechanically delaminate silicon film from a single crystal silicon bulk thereby obtaining a semiconductor substrate (SOI substrate) having a silicon film (SOI film) 12. Next, the SOI substrate is subjected to a heat-treatment at a temperature of 600° C. to 1250° C. so that metal impurities accidentally mixed into an interface of the SOI film and the quartz substrate and into the SOI film in such a step as a plasma-treatment are gettered to a surface region of the silicon film 12. Then, in the end, a surface layer (gettering layer) of the silicon film 12 of the SOI substrate after the heat-treatment is removed to finally prepare an SOI film 13 and a semiconductor substrate (SOI substrate) is obtained.

摘要翻译： 本发明的目的是提供一种可以在低温下进行接合并降低SOI膜中的金属污染物的量的方法。 以下述方式实现本发明的实施例。 通过等离子体处理表面激活的单晶硅衬底10和石英衬底20在低温下被接合在一起，对其进行外部冲击以将硅膜从单晶硅体层剥离，从而获得半导体衬底 （SOI衬底）12。接下来，将SOI衬底在600℃至1250℃的温度下进行热处理，使得金属杂质意外地混入到 SOI膜和石英衬底以及诸如等离子体处理的步骤中的SOI膜被吸收到硅膜12的表面区域。然后，最后，将硅膜12的表面层（吸气层） 的SOI基板，最终制作SOI膜13，得到半导体基板（SOI基板）。

公开(公告)号：US07892934B2

公开(公告)日：2011-02-22

申请号：US12158047

申请日：2006-11-01

申请人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Shoji Akiyama

发明人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Shoji Akiyama

IPC分类号： H01L21/331 ,  H01L21/8222

CPC分类号： H01L21/76254

摘要： On the side of a surface (the bonding surface side) of a single crystal Si substrate, a uniform ion implantation layer is formed at a prescribed depth (L) in the vicinity of the surface. The surface of the single crystal Si substrate and a surface of a transparent insulating substrate as bonding surfaces are brought into close contact with each other, and bonding is performed by heating the substrates in this state at a temperature of 350° C. or below. After this bonding process, an Si—Si bond in the ion implantation layer is broken by applying impact from the outside, and a single crystal silicon thin film is mechanically peeled along a crystal surface at a position equivalent to the prescribed depth (L) in the vicinity of the surface of the single crystal Si substrate.

摘要翻译： 在单晶Si衬底的表面（接合面侧）侧，在表面附近以规定的深度（L）形成均匀的离子注入层。 单晶Si衬底的表面和作为结合面的透明绝缘衬底的表面彼此紧密接触，并且通过在350℃或更低的温度下在该状态下加热衬底来进行接合。 在该接合工艺之后，通过从外部施加冲击来破坏离子注入层中的Si-Si键，并且在等于规定深度（L）的位置上的晶体表面机械剥离单晶硅薄膜 单晶Si衬底表面附近。

公开(公告)号：US07855127B2

公开(公告)日：2010-12-21

申请号：US12010711

申请日：2008-01-29

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： H01L21/30

CPC分类号： H01L21/76254 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262

摘要： A method for manufacturing a semiconductor substrate including: epitaxially growing a silicon germanium (SiGe) film on a silicon (Si) substrate by a chemical vapor deposition method; subjecting a heat treatment to the SiGe film at a temperature of not less than 700° C. and not more than 1200° C.; implanting hydrogen ions into a surface of the SiGe film; subjecting a surface activation treatment to a main surface of at least one of the SiGe film and a support substrate; bonding main surfaces of the SiGe film and the support substrate at a temperature of not less than 100° C. and not more than 400° C.; and applying an external impact to a bonding interface between the SiGe film and the support substrate to delaminate the SiGe crystal along a hydrogen ion implanted interface of the SiGe film, thereby forming a SiGe thin film on the main surface of the support substrate.

摘要翻译： 一种制造半导体衬底的方法，包括：通过化学气相沉积法在硅（Si）衬底上外延生长硅锗（SiGe）膜; 在不低于700℃且不超过1200℃的温度下对SiGe膜进行热处理; 将氢离子注入SiGe膜的表面; 对SiGe膜和支撑基板中的至少一个的主表面进行表面活化处理; 在不低于100℃且不超过400℃的温度下接合SiGe膜和支撑衬底的主表面; 并对SiGe膜和支撑基板之间的接合界面施加外部冲击，以沿着SiGe膜的氢离子注入界面分解SiGe晶体，从而在支撑基板的主表面上形成SiGe薄膜。