公开(公告)号：US20160300957A1

公开(公告)日：2016-10-13

申请号：US15084802

申请日：2016-03-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaoyong LU ,  Zheng LIU ,  Xiaolong LI ,  Dong LI ,  Huijuan ZHANG ,  Liang SUN

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L27/12

CPC classification number: H01L29/78675 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L2029/7863

Abstract: The embodiments of the present invention disclose a low temperature (LTPS) transistor array substrate and a method of fabricating the same, and a display device. The LTPS transistor array substrate comprises a substrate; a poly-silicon semiconductor active region provided on the substrate; agate insulated from the poly-silicon semiconductor active region; and a dielectric spacer region provided on a side wall of the gate, wherein a portion of the poly-silicon semiconductor active region corresponding to the dielectric spacer region comprises a buffer region, and the dielectric spacer region surrounds the side wall of the gate and covers the buffer region.

Abstract translation: 本发明的实施例公开了低温（LTPS）晶体管阵列基板及其制造方法以及显示装置。 LTPS晶体管阵列基板包括基板; 设置在所述基板上的多晶硅半导体有源区; 与多晶硅半导体有源区绝缘的玛瑙; 以及设置在所述栅极的侧壁上的电介质间隔区，其中与所述电介质间隔区相对应的所述多晶硅半导体有源区的一部分包括缓冲区，并且所述电介质间隔区围绕所述栅极的侧壁 缓冲区。

公开(公告)号：US20160247823A1

公开(公告)日：2016-08-25

申请号：US14428578

申请日：2014-07-16

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yueping ZUO ,  Zheng LIU

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/124 ,  H01L27/1222 ,  H01L27/1262 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78678

Abstract: The present disclosure relates to the field of TFT manufacturing process, and provides an LTPS TFT array substrate, its manufacturing method and a display device. The LTPS TFT array substrate includes contact holes through which a source electrode and a drain electrode of the array substrate are connected to an active layer, respectively, wherein a conductive pattern connected to the active layer is provided at a base portion of the contact hole. According to the present disclosure, it is able to form an excellent ohmic contact between the source/drain electrodes and the active layer after the contact holes have been etched, thereby to ensure the display quality of the display device.

Abstract translation: 本公开涉及TFT制造工艺领域，并提供一种LTPS TFT阵列基板，其制造方法和显示装置。 LTPS TFT阵列基板包括接触孔，阵列基板的源电极和漏电极分别连接到有源层，其中连接到有源层的导电图案设置在接触孔的基部。 根据本公开，在蚀刻接触孔之后，能够在源/漏电极和有源层之间形成优异的欧姆接触，从而确保显示装置的显示质量。

公开(公告)号：US20160181289A1

公开(公告)日：2016-06-23

申请号：US14646416

申请日：2014-09-23

Applicant: BOE Technology Group Co., Ltd.

Inventor： Chunping LONG ,  Zheng LIU ,  Zuqiang WANG ,  Jang Soon IM

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32 ,  H01L29/66

CPC classification number: H01L27/1222 ,  H01L21/77 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/1288 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/66757 ,  H01L29/78675 ,  H01L2227/323

Abstract: An array substrate and manufacturing method thereof, a display device, a thin film transistor and manufacturing method thereof are provided. The manufacturing method of an array substrate includes forming an active material layer (501), a gate insulating layer (204) and a metal thin film (502) on a base substrate (201), and forming a pattern including an active layer (203) and a pattern including a gate electrode (205), a source electrode (206), a drain electrode (207), a gate line (1063) and a data line (1061) by a first patterning process; forming a passivation layer (301) on the base substrate (201), and forming a source contact hole (302), a drain contact hole (303), and an bridge-structure contact hole (1062a) by a second patterning process; forming a transparent conductive thin film (1401) on the base substrate (201), and removing the transparent conductive thin film (1404) partially, so that a source contact section (401), a drain contact section (402), a pixel electrode (403), and an bridge structure (1062) are formed. With the manufacturing method, the use number of patterning processes is decreased.

Abstract translation: 提供阵列基板及其制造方法，显示装置，薄膜​​晶体管及其制造方法。 阵列基板的制造方法包括在基底基板（201）上形成活性物质层（501），栅极绝缘层（204）和金属薄膜（502），形成包括活性层（203）的图案 ）和通过第一图案化工艺包括栅电极（205），源电极（206），漏电极（207），栅线（1063）和数据线（1061）的图案; 在所述基底基板上形成钝化层，通过第二构图工艺形成源极接触孔，漏极接触孔和桥接结构接触孔; 在所述基底基板上形成透明导电薄膜，将所述透明导电薄膜部分地去除，使得源极接触部分，漏极接触部分，像素电极， （403）和桥结构（1062）。 通过制造方法，图案化处理的使用次数减少。

公开(公告)号：US20240304631A1

公开(公告)日：2024-09-12

申请号：US18020601

申请日：2022-05-31

Applicant: BOE Technology Group Co., Ltd.

Inventor： Hongwei TIAN ,  Yanan NIU ,  Jing WANG ,  Ran LI ,  Xueyan TIAN ,  Zheng LIU ,  Libin LIU ,  Shiming SHI

IPC: H01L27/12 ,  G06V40/13 ,  G09G3/3225

CPC classification number: H01L27/1225 ,  H01L27/127 ,  G06V40/1318 ,  G09G3/3225 ,  G09G2300/0426 ,  G09G2300/0819 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2310/08

Abstract: Provided is a drive backplane. The drive backplane includes: a base substrate and a circuit structure. The circuit structure includes a plurality of first thin film transistors and a plurality of second thin film transistors; wherein a first active layer of the first thin film transistor includes a first oxide layer and a second oxide layer, wherein the second oxide layer is disposed on a side of the first oxide layer away from the base substrate, a mobility of the second oxide layer is lower than a mobility of the first oxide layer, and a source and a drain of the first thin film transistor are connected to the second oxide layer; and a second active layer of the second thin film transistor includes a third oxide layer, wherein a mobility of the third oxide layer is lower than the mobility of the first oxide layer.

公开(公告)号：US20230110228A1

公开(公告)日：2023-04-13

申请号：US17905246

申请日：2020-03-19

Applicant: Fuzhou BOE Optoelectronics Technology Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Dapeng XUE ,  Zheng LIU ,  Hehe HU ,  Lizhong WANG ,  Shuilang DONG ,  Nianqi YAO

IPC: H01L29/66 ,  H01L29/786 ,  H01L29/45 ,  H01L29/40

Abstract: Disclosed are a thin-film transistor and a preparation method therefor, and a display substrate and a display panel. The thin-film transistor includes: a base substrate; an active layer located on the base substrate; and a source-drain electrode which is located on the side of the active layer facing away from the base substrate, and includes an electrode layer and a protective layer, where the material of the electrode layer includes a first metal element; the protective layer covers the surface of the side of the electrode layer facing away from the base substrate, and a side face of the electrode layer; and the material of the protective layer is an oxide of the first metal element.

公开(公告)号：US20230005430A1

公开(公告)日：2023-01-05

申请号：US17778597

申请日：2021-01-15

Applicant: Hefei Xinsheng Optoelectronics Technology Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Guangyao LI ,  Zheng LIU ,  Haitao WANG ,  Jun WANG ,  Dongfang WANG

IPC: G09G3/3266 ,  G09G3/3233 ,  G09G3/20 ,  G11C19/28

Abstract: Provided are a display substrate and a detection method therefor, and a display apparatus. Compensation sub-circuits that are in one-to-one correspondence with each stage of a shift register are arranged in a gate driving circuit, and a first capacitor in each compensation sub-circuit is thus charged under the control of a detection input circuit when each stage of the shift register outputs a signal stage by stage; and an output control circuit is used to disconnect the compensation sub-circuit from a pull-up node of the corresponding stage of the shift register. The triggering of each stage of the shift register is stopped after each stage of the shift register (CR(n)) completes outputting, and the output control circuit provides a signal of a first power voltage end to the pull-up node of the corresponding stage of the shift register under the control of a second control end and the first capacitor.

公开(公告)号：US20220129659A1

公开(公告)日：2022-04-28

申请号：US17504372

申请日：2021-10-18

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jing WANG ,  Ming LIU ,  Zheng LIU ,  Hongwei TIAN ,  Yibing FAN ,  Jia ZHAO

IPC: G06K9/00 ,  H01L27/32 ,  H01L51/56 ,  H01L51/52

Abstract: An optical fingerprint sensor is provided. The optical fingerprint sensor includes a backplate structure layer, a pixel defining layer, and an organic photoelectric sensing layer, wherein the pixel defining layer is disposed on a side of the backplate structure layer; and a non-pixel region of the pixel defining layer is provided with a first non-pixel hole, and the organic photoelectric sensing layer is disposed in the first non-pixel hole.

公开(公告)号：US20220013673A1

公开(公告)日：2022-01-13

申请号：US17295921

申请日：2020-08-18

Applicant: BOE Technology Group Co., Ltd.

Inventor： Chunyang WANG ,  Hejin WANG ,  Liangjian LI ,  Zheng LIU

IPC: H01L31/0236 ,  H01L31/20 ,  H01L51/56 ,  H01L27/32 ,  H01L51/52

Abstract: Disclosed in embodiments of the present disclosure are a display panel and a manufacturing method therefor, and a display apparatus. The display panel includes: a base substrate; an organic functional film layer provided on the base substrate; an insulating layer provided on the organic functional film layer, a plurality of dents distributed at intervals are provided on one side of the insulating layer distant from the organic functional film layer; and an amorphous silicon solar cell film layer provided at one side of the insulating layer distant from the organic functional film layer, the amorphous silicon solar cell film layer has the same morphology as the surface of the insulating layer where the dents are provided.

公开(公告)号：US20210375952A1

公开(公告)日：2021-12-02

申请号：US16641372

申请日：2019-05-23

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hongwei TIAN ,  Yanan NIU ,  Meng ZHAO ,  Lei WANG ,  Zheng LIU

IPC: H01L27/12

Abstract: Embodiments of the present disclosure provide an array substrate including a base substrate, an active layer on the base substrate, a first gate insulating layer on the active layer, a first gate on the first gate insulating layer, and a second gate insulating layer on the first gate. The second gate insulating layer includes a first sub-insulating layer and a second sub-insulating layer disposed in a direction away from the active layer, and a hydrogen content of the first sub-insulating layer is larger than a hydrogen content of the second sub-insulating layer. A method for fabricating the array substrate and a display panel including the array substrate are also provided.

公开(公告)号：US20210226164A1

公开(公告)日：2021-07-22

申请号：US16770916

申请日：2019-12-04

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hongwei TIAN ,  Yanan NIU ,  Chunyan XIE ,  Chunyang WANG ,  Dong LI ,  Zheng LIU ,  Ming LIU

IPC: H01L51/52 ,  H01L51/56

Abstract: The present disclosure provides an organic light-emitting diode display substrate and a manufacturing method thereof. The manufacturing method includes: sequentially forming a first electrode, a light-emitting layer and a second electrode on a base substrate; forming a protection layer having a first opening on a side of the second electrode distal to the base substrate; and forming a second opening in the second electrode, the second opening being located below the first opening. In the present disclosure, with the protection layer, only a portion of the second electrode below the first opening is removed, so that other portions of the second electrode are prevented from being damaged, thereby eliminating a poor display of the display device.