利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

198 条记录 (耗时 0.05 秒)

    Electrostatically driven lithography
    32.
    发明授权
    Electrostatically driven lithography 失效
    静电驱动光刻

    公开(公告)号：US07102656B2

    公开(公告)日：2006-09-05

    申请号：US10442188

    申请日：2003-05-21

    申请人： Chad A. Mirkin ,  Jung-Hyurk Lim

    发明人： Chad A. Mirkin ,  Jung-Hyurk Lim

    IPC分类号： G01D15/16

    CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03B27/42 ,  G03F7/164

    摘要： A method of nanolithography includes transporting a patterning compound from a nanoscopic tip to a substrate to form a pattern on the substrate. The patterning compound has a first electrostatic charge and the substrate has a second electrostatic charge which is opposite to the first electrostatic charge. The patterning compound can be an electrically conductive polymer having a charged polymer backbone. The patterns can be dots and lines having lateral dimensions of less than one micron. No electrical bias from an external voltage source between the tip and the substrate is needed.

    摘要翻译： 纳米光刻的方法包括将图案化化合物从纳米尖端转移到基底以在基底上形成图案。 图案化化合物具有第一静电电荷，并且衬底具有与第一静电电荷相反的第二静电电荷。 图案化化合物可以是具有带电聚合物主链的导电聚合物。 图案可以是具有小于1微米的横向尺寸的点和线。 不需要在尖端和衬底之间的外部电压源的电偏压。

    Molecular level, precision control over the interfacial properties of high-T.sub.C superconductor structures and devices
    40.
    发明授权
    Molecular level, precision control over the interfacial properties of high-T.sub.C superconductor structures and devices 失效
    分子水平，精密控制高TC超导体结构和器件的界面特性

    公开(公告)号：US5846909A

    公开(公告)日：1998-12-08

    申请号：US445598

    申请日：1995-05-22

    申请人： John T. McDevitt ,  Chad A. Mirkin

    发明人： John T. McDevitt ,  Chad A. Mirkin

    IPC分类号： H01L39/24 ,  H01L39/00

    CPC分类号： B82Y30/00 ,  H01L39/247 ,  Y10S428/93 ,  Y10S505/701 ,  Y10S505/704 ,  Y10T428/261 ,  Y10T428/268

    摘要： Use of monolayer films for the direct modification of high-T.sub.c superconductor structures and devices. Methods for the formation of superconductor localized monolayer films have been discovered based on the spontaneous adsorption of molecules containing ligating functionalities, such as alkylamine, arylamine, and alkylthiol moieties. Molecules containing these types of functionalities are found to bind tenaciously to the metal ions which form the high-T.sub.c superconductor surface. The derivatized superconductor structures can be prepared simply by soaking the high-T.sub.c, superconductor structure or device in a dry organic solvent system which contains the derivatizing agent. Large changes in the superconductor interfacial properties can be achieved with such procedures allowing for the atomic level control of the surface properties of the superconductor. This discovery is particularly important to provide a) new methods to fabricate superconductor devices with atomic level precision, b) to form defect-free anti-corrosion layers, c) improved/optimized methods for lithographic processing of high-T.sub.c devices, and d) improved adhesion of protective layers by surface-modification.

    摘要翻译： 使用单层膜直接改性高Tc超导体结构和器件。 已经基于含有连接官能团的分子的自发吸附（例如烷基胺，芳基胺和烷基硫醇部分）发现形成超导体局部单层膜的方法。 发现含有这些类型功能的分子与形成高Tc超导体表面的金属离子牢固结合。 衍生的超导体结构可以简单地通过将高Tc，超导体结构或器件浸入含有衍生剂的干燥有机溶剂体系中来制备。 可以通过这样的方法实现超导体界面特性的大的变化，从而允许超导体表面性质的原子水平控制。 这一发现对于提供a）用于制造具有原子级精度的超导体器件的新方法特别重要，b）形成无缺陷的防腐蚀层，c）用于高Tc器件的光刻处理的改进/优化方法，以及d） 通过表面改性改善保护层的附着力。