CMOS MILLIMETER-WAVE VARIABLE-GAIN LOW-NOISE AMPLIFIER
    31.
    发明申请
    CMOS MILLIMETER-WAVE VARIABLE-GAIN LOW-NOISE AMPLIFIER 有权
    CMOS MILLIMETER-WAVE VARIABLE-GAIN低噪声放大器

    公开(公告)号:US20120032742A1

    公开(公告)日:2012-02-09

    申请号:US12851705

    申请日:2010-08-06

    IPC分类号: H03G3/30 H03F3/16 H03F1/22

    摘要: A low-noise amplifier (LNA) includes a first cascode gain stage coupled to an input node for increasing an amplitude of an RF input signal. A first variable gain network is coupled to the first cascode gain stage and includes a first inductor for boosting a gain of the first cascode gain stage, a first capacitor coupled to the first inductor for blocking a direct current (DC) voltage, and a first switch coupled to the first inductor and to the first capacitor. The first switch is configured to selectively couple the first inductor to the first cascode gain stage in response to a first control signal.

    摘要翻译: 低噪声放大器(LNA)包括耦合到输入节点的第一共源共同增益级,用于增加RF输入信号的幅度。 第一可变增益网络耦合到第一共源共同增益级,并且包括用于升高第一共源共享增益级的增益的第一电感器,耦合到第一电感器以阻止直流(DC)电压的第一电容器,以及第一可变增益网络 开关耦合到第一电感器和第一电容器。 第一开关被配置为响应于第一控制信号选择性地将第一电感器耦合到第一共源共享增益级。

    METHOD AND APPARATUS FOR LOW POWER SEMICONDUCTOR CHIP LAYOUT AND LOW POWER SEMICONDUCTOR CHIP
    33.
    发明申请
    METHOD AND APPARATUS FOR LOW POWER SEMICONDUCTOR CHIP LAYOUT AND LOW POWER SEMICONDUCTOR CHIP 有权
    低功率半导体芯片布局和低功率半导体芯片的方法和装置

    公开(公告)号:US20120017192A1

    公开(公告)日:2012-01-19

    申请号:US12852664

    申请日:2010-08-09

    IPC分类号: G06F17/50

    摘要: A layout system is described comprising a layout unit configured to layout cells in a mask design for a semiconductor chip based on library cells for a specified process node; a non-critical path determination unit configured to determine a non-critical path in the semiconductor chip; a cell determination unit configured to determine a group of cells in the mask design that form a part of the non-critical path and determine the corresponding library cell for at least one of the group of cells; a library cell modifying unit configured to modify one or more corresponding library cells to form a corresponding modified library cell; and a cell replacement unit configured to replace a library cell in the group of cells in the mask design that form a part of the non-critical path with the corresponding modified library cell.

    摘要翻译: 描述布局系统,其包括布局单元,其被配置为基于用于指定处理节点的库单元为半导体芯片的掩模设计布置单元; 非关键路径确定单元,被配置为确定半导体芯片中的非关键路径; 细胞确定单元,被配置为确定所述掩模设计中形成所述非关键路径的一部分的一组细胞,并确定所述细胞组中的至少一个的相应库细胞; 文库细胞修饰单元,被配置为修饰一个或多个相应的文库细胞以形成相应的修饰的文库细胞; 以及细胞置换单元,被配置为用形成所述非关键路径的一部分的所述掩模设计中的所述细胞组中的库单元替换相应的修改的库单元。

    DAC ARCHITECTURE FOR LCD SOURCE DRIVER
    34.
    发明申请
    DAC ARCHITECTURE FOR LCD SOURCE DRIVER 有权
    用于LCD源驱动器的DAC架构

    公开(公告)号:US20110261084A1

    公开(公告)日:2011-10-27

    申请号:US12859888

    申请日:2010-08-20

    摘要: A two-stage digital-to-analog converter for outputting an analog voltage in response to a M-bit digital input code includes a two-bit serial charge redistribution digital-to-analog converter having a high reference voltage input node for receiving a high reference voltage and a low reference voltage input node for receiving a low reference voltage, and a voltage selector. The voltage selector sets the high reference voltage and low reference voltage to selected levels depending on at least a portion of the M-bit digital input code.

    摘要翻译: 用于响应于M位数字输入代码输出模拟电压的两级数模转换器包括具有高参考电压输入节点的两位串行电荷再分配数模转换器,用于接收高电平 参考电压和用于接收低参考电压的低参考电压输入节点,以及电压选择器。 电压选择器将高参考电压和低参考电压设置为所选电平,这取决于至少一部分M位数字输入代码。