公开(公告)号：US08809994B2

公开(公告)日：2014-08-19

申请号：US13316104

申请日：2011-12-09

申请人： Roger A. Booth, Jr. ,  Kangguo Cheng ,  Joseph Ervin ,  Chengwen Pei ,  Ravi M. Todi ,  Geng Wang

发明人： Roger A. Booth, Jr. ,  Kangguo Cheng ,  Joseph Ervin ,  Chengwen Pei ,  Ravi M. Todi ,  Geng Wang

IPC分类号： H01L21/70

CPC分类号： H01L27/1087 ,  H01L27/10829 ,  H01L27/1203 ,  H01L29/945

摘要： Two trenches having different widths are formed in a semiconductor-on-insulator (SOI) substrate. An oxygen-impermeable layer and a fill material layer are formed in the trenches. The fill material layer and the oxygen-impermeable layer are removed from within a first trench. A thermal oxidation is performed to convert semiconductor materials underneath sidewalls of the first trench into an upper thermal oxide portion and a lower thermal oxide portion, while the remaining oxygen-impermeable layer on sidewalls of a second trench prevents oxidation of the semiconductor materials. After formation of a node dielectric on sidewalls of the second trench, a conductive material is deposited to fill the trenches, thereby forming a conductive trench fill portion and an inner electrode, respectively. The upper and lower thermal oxide portions function as components of dielectric material portions that electrically isolate two device regions.

摘要翻译： 在绝缘体上半导体（SOI）衬底中形成具有不同宽度的两个沟槽。 在沟槽中形成不透氧层和填充材料层。 从第一沟槽内去除填充材料层和不透氧层。 执行热氧化以将第一沟槽的侧壁下方的半导体材料转换成上部热氧化物部分和下部热氧化物部分，而在第二沟槽的侧壁上的剩余的不透氧层防止半导体材料的氧化。 在第二沟槽的侧壁上形成节点电介质之后，沉积导电材料以填充沟槽，从而分别形成导电沟槽填充部分和内部电极。 上部和下部热氧化物部分用作电绝缘两个器件区域的介电材料部分的部件。

公开(公告)号：US20140070292A1

公开(公告)日：2014-03-13

申请号：US13606448

申请日：2012-09-07

申请人： Kangguo Cheng ,  Joseph Ervin ,  Chengwen Pei ,  Ravi M. Todi ,  Geng Wang

发明人： Kangguo Cheng ,  Joseph Ervin ,  Chengwen Pei ,  Ravi M. Todi ,  Geng Wang

IPC分类号： H01L27/108 ,  H01L21/311

CPC分类号： H01L28/60 ,  H01L21/84 ,  H01L27/10829 ,  H01L27/1087 ,  H01L27/1203 ,  H01L29/66181

摘要： A method of forming a deep trench capacitor in a semiconductor-on-insulator substrate is provided. The method may include providing a pad layer positioned above a bulk substrate, etching a deep trench into the pad layer and the bulk substrate extending from a top surface of the pad layer down to a location within the bulk substrate, and doping a portion of the bulk substrate to form a buried plate. The method further including depositing a node dielectric, an inner electrode, and a dielectric cap substantially filling the deep trench, the node dielectric being located between the buried plate and the inner electrode, the dielectric cap being located at a top of the deep trench, removing the pad layer, growing an insulator layer on top of the bulk substrate, and growing a semiconductor-on-insulator layer on top of the insulator layer.

摘要翻译： 提供了在绝缘体上半导体衬底中形成深沟槽电容器的方法。 该方法可以包括提供定位在大块衬底之上的衬垫层，将深沟槽蚀刻到衬垫层中，以及从衬垫层的顶表面延伸到体衬底内的位置的本体衬底，以及掺杂 散装衬底形成掩埋板。 该方法还包括沉积基本上填充深沟槽的节点电介质，内部电极和电介质帽，节点电介质位于掩埋板和内部电极之间，电介质帽位于深沟槽的顶部， 去除衬垫层，在本体衬底的顶部上生长绝缘体层，以及在绝缘体层的顶部上生长绝缘体上半导体层。

公开(公告)号：US08629017B2

公开(公告)日：2014-01-14

申请号：US13417900

申请日：2012-03-12

申请人： Chengwen Pei ,  Kangguo Cheng ,  Herbert L. Ho ,  Subramanian S. Iyer ,  Byeong Y. Kim ,  Geng Wang ,  Huilong Zhu

发明人： Chengwen Pei ,  Kangguo Cheng ,  Herbert L. Ho ,  Subramanian S. Iyer ,  Byeong Y. Kim ,  Geng Wang ,  Huilong Zhu

IPC分类号： H01L21/8242

CPC分类号： H01L27/1203 ,  H01L21/84 ,  H01L27/10829 ,  H01L27/10861 ,  H01L29/945

摘要： A memory device is provided that in one embodiment includes a trench capacitor located in a semiconductor substrate including an outer electrode provided by the semiconductor substrate, an inner electrode provided by a conductive fill material, and a node dielectric layer located between the outer electrode and the inner electrode; and a semiconductor device positioned centrally over the trench capacitor. The semiconductor device includes a source region, a drain region, and a gate structure, in which the semiconductor device is formed on a semiconductor layer that is separated from the semiconductor substrate by a dielectric layer. A first contact is present extending from an upper surface of the semiconductor layer into electrical contact with the semiconductor substrate, and a second contact from the drain region of the semiconductor device in electrical contact to the conductive material within the at least one trench.

摘要翻译： 提供了一种存储器件，其在一个实施例中包括位于半导体衬底中的沟槽电容器，该半导体衬底包括由半导体衬底提供的外部电极，由导电填充材料提供的内部电极，以及位于外部电极和 内电极 以及位于沟槽电容器上方的半导体器件。 半导体器件包括源极区，漏极区和栅极结构，其中半导体器件形成在通过介电层与半导体衬底分离的半导体层上。 存在从半导体层的上表面延伸到与半导体衬底电接触的第一接触，以及从半导体器件的漏极区域与至少一个沟槽内的导电材料电接触的第二接触。

公开(公告)号：US20130328157A1

公开(公告)日：2013-12-12

申请号：US13489572

申请日：2012-06-06

申请人： Kangguo Cheng ,  Joseph Ervin ,  Chengwen Pei ,  Ravi M. Todi ,  Geng Wang

发明人： Kangguo Cheng ,  Joseph Ervin ,  Chengwen Pei ,  Ravi M. Todi ,  Geng Wang

IPC分类号： H01L29/00 ,  H01L21/762

CPC分类号： H01L29/0649 ,  H01L27/10829 ,  H01L27/10861 ,  H01L27/10867 ,  H01L27/1203 ,  H01L29/66181 ,  H01L29/945

摘要： A method of forming improved spacer isolation in deep trench including recessing a node dielectric, a first conductive layer, and a second conductive layer each deposited within a deep trench formed in a silicon-on-insulator (SOI) substrate, to a level below a buried oxide layer of the SOI substrate, and creating an opening having a bottom surface in the deep trench. Further including depositing a spacer along a sidewall of the deep trench and the bottom surface of the opening, and removing the spacer from the bottom surface of the opening. Performing at least one of an ion implantation and an ion bombardment in one direction at an angle into an upper portion of the spacer. Removing the upper portion of the spacer from the sidewall of the deep trench. Depositing a third conductive layer within the opening.

摘要翻译： 在深沟槽中形成改进的间隔隔离的方法，包括将形成在绝缘体上硅（SOI）衬底中的深沟槽内沉积的节点电介质，第一导电层和第二导电层凹入到低于 SOI衬底的掩埋氧化物层，并且在深沟槽中形成具有底表面的开口。 还包括沿深沟槽的侧壁和开口的底表面沉积间隔物，以及从开口的底表面移除隔离物。 在一个方向上以一定角度进行离子注入和离子轰击中的至少一个进入间隔物的上部。 从深沟槽的侧壁上去除隔离物的上部。 在开口内沉积第三导电层。

公开(公告)号：US08492811B2

公开(公告)日：2013-07-23

申请号：US12886224

申请日：2010-09-20

申请人： Roger A. Booth, Jr. ,  Kangguo Cheng ,  Joseph Ervin ,  Chengwen Pei ,  Geng Wang

发明人： Roger A. Booth, Jr. ,  Kangguo Cheng ,  Joseph Ervin ,  Chengwen Pei ,  Geng Wang

IPC分类号： H01L27/108

CPC分类号： H01L27/10876 ,  H01L21/84 ,  H01L27/10873 ,  H01L27/10894 ,  H01L27/1203 ,  H01L29/66181 ,  H01L29/945

摘要： After forming a planarization dielectric layer in a replacement gate integration scheme, disposable gate structures are removed and a stack of a gate dielectric layer and a gate electrode layer is formed within recessed gate regions. Each gate electrode structure is then recessed below a topmost surface of the gate dielectric layer. A dielectric metal oxide portion is formed above each gate electrode by planarization. The dielectric metal oxide portions and gate spacers are employed as a self-aligning etch mask in combination with a patterned photoresist to expose and metalize semiconductor surfaces of a source region and an inner electrode in each embedded memory cell structure. The metalized semiconductor portions form metal semiconductor alloy straps that provide a conductive path between the inner electrode of a capacitor and the source of an access transistor.

摘要翻译： 在替代栅极集成方案中形成平坦化介电层之后，去除一次性栅极结构，并且在凹入的栅极区内形成栅极电介质层和栅极电极层的堆叠。 然后，每个栅极电极结构凹陷在栅极电介质层的最上表面之下。 通过平面化形成在每个栅电极上方的介电金属氧化物部分。 电介质金属氧化物部分和栅极间隔物用作自对准蚀刻掩模与图案化的光致抗蚀剂组合以在每个嵌入的存储器单元结构中暴露和金属化源极区域和内部电极的半导体表面。 金属化半导体部分形成金属半导体合金带，其在电容器的内部电极和存取晶体管的源之间提供导电路径。

公开(公告)号：US08409989B2

公开(公告)日：2013-04-02

申请号：US12944174

申请日：2010-11-11

申请人： Chengwen Pei ,  Roger Allen Booth, Jr. ,  Kangguo Cheng ,  Joseph Ervin ,  Ravi M. Todi ,  Geng Wang

发明人： Chengwen Pei ,  Roger Allen Booth, Jr. ,  Kangguo Cheng ,  Joseph Ervin ,  Ravi M. Todi ,  Geng Wang

IPC分类号： H01L29/72

CPC分类号： H01L29/49 ,  H01L21/743 ,  H01L21/823475 ,  H01L21/823871 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/78612

摘要： A structure and method to fabricate a body contact on a transistor is disclosed. The method comprises forming a semiconductor structure with a transistor on a handle wafer. The structure is then inverted, and the handle wafer is removed. A silicided body contact is then formed on the transistor in the inverted position. The body contact may be connected to neighboring vias to connect the body contact to other structures or levels to form an integrated circuit.

摘要翻译： 公开了一种在晶体管上制造体接触的结构和方法。 该方法包括在处理晶片上形成具有晶体管的半导体结构。 然后将结构反转，并移除手柄晶片。 然后在倒置位置的晶体管上形成硅化物体接触。 身体接触可以连接到相邻的通孔，以将身体接触连接到其他结构或水平以形成集成电路。

公开(公告)号：US20120306049A1

公开(公告)日：2012-12-06

申请号：US13153538

申请日：2011-06-06

申请人： Roger A. Booth, JR. ,  Kangguo Cheng ,  Joseph Ervin ,  Chengwen Pei ,  Ravi M. Todi ,  Geng Wang

发明人： Roger A. Booth, JR. ,  Kangguo Cheng ,  Joseph Ervin ,  Chengwen Pei ,  Ravi M. Todi ,  Geng Wang

IPC分类号： H01L21/20 ,  H01L27/06

CPC分类号： H01L27/10829 ,  H01L21/743 ,  H01L21/76283 ,  H01L27/0629 ,  H01L27/108 ,  H01L27/1087 ,  H01L27/1203 ,  H01L28/60 ,  H01L28/92 ,  H01L29/0649 ,  H01L29/66181

摘要： A high-k dielectric metal trench capacitor and improved isolation and methods of manufacturing the same is provided. The method includes forming at least one deep trench in a substrate, and filling the deep trench with sacrificial fill material and a poly material. The method further includes continuing with CMOS processes, comprising forming at least one transistor and back end of line (BEOL) layer. The method further includes removing the sacrificial fill material from the deep trenches to expose sidewalls, and forming a capacitor plate on the exposed sidewalls of the deep trench. The method further includes lining the capacitor plate with a high-k dielectric material and filling remaining portions of the deep trench with a metal material, over the high-k dielectric material. The method further includes providing a passivation layer on the deep trench filled with the metal material and the high-k dielectric material.

摘要翻译： 提供了高k电介质金属沟槽电容器和改进的隔离及其制造方法。 该方法包括在衬底中形成至少一个深沟槽，并用牺牲填充材料和聚合材料填充深沟槽。 该方法还包括继续CMOS工艺，包括形成至少一个晶体管和后端（BEOL）层。 该方法还包括从深沟槽去除牺牲填充材料以暴露侧壁，以及在深沟槽的暴露的侧壁上形成电容器板。 该方法还包括用高k电介质材料衬套电容器板，并用金属材料在高k电介质材料上填充深沟槽的剩余部分。 该方法还包括在填充有金属材料和高k电介质材料的深沟槽上提供钝化层。

公开(公告)号：US08188528B2

公开(公告)日：2012-05-29

申请号：US12437242

申请日：2009-05-07

申请人： Chengwen Pei ,  Kangguo Cheng ,  Herbert L. Ho ,  Subramanian S. Iyer ,  Byeong Y. Kim ,  Geng Wang ,  Huilong Zhu

发明人： Chengwen Pei ,  Kangguo Cheng ,  Herbert L. Ho ,  Subramanian S. Iyer ,  Byeong Y. Kim ,  Geng Wang ,  Huilong Zhu

IPC分类号： H01L27/108

CPC分类号： H01L27/1203 ,  H01L21/84 ,  H01L27/10829 ,  H01L27/10861 ,  H01L29/945

摘要： A memory device is provided that in one embodiment includes a trench capacitor located in a semiconductor substrate including an outer electrode provided by the semiconductor substrate, an inner electrode provided by a conductive fill material, and a node dielectric layer located between the outer electrode and the inner electrode; and a semiconductor device positioned centrally over the trench capacitor. The semiconductor device includes a source region, a drain region, and a gate structure, in which the semiconductor device is formed on a semiconductor layer that is separated from the semiconductor substrate by a dielectric layer. A first contact is present extending from an upper surface of the semiconductor layer into electrical contact with the semiconductor substrate, and a second contact from the drain region of the semiconductor device in electrical contact to the conductive material within the at least one trench.

摘要翻译： 提供了一种存储器件，其在一个实施例中包括位于半导体衬底中的沟槽电容器，该半导体衬底包括由半导体衬底提供的外部电极，由导电填充材料提供的内部电极，以及位于外部电极和 内电极 以及位于沟槽电容器上方的半导体器件。 半导体器件包括源极区，漏极区和栅极结构，其中半导体器件形成在通过介电层与半导体衬底分离的半导体层上。 存在从半导体层的上表面延伸到与半导体衬底电接触的第一接触，以及从半导体器件的漏极区域与至少一个沟槽内的导电材料电接触的第二接触。

公开(公告)号：US20110215412A1

公开(公告)日：2011-09-08

申请号：US12717375

申请日：2010-03-04

申请人： Chengwen Pei ,  Roger A. Booth, JR. ,  Kangguo Cheng ,  Joseph Ervin ,  Ravi M. Todi ,  Geng Wang

发明人： Chengwen Pei ,  Roger A. Booth, JR. ,  Kangguo Cheng ,  Joseph Ervin ,  Ravi M. Todi ,  Geng Wang

IPC分类号： H01L27/092 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/22

CPC分类号： H01L21/22 ,  H01L21/8238 ,  H01L27/092

摘要： A semiconductor structure and a method of forming the same are provided in which the gate induced drain leakage is controlled by introducing a workfunction tuning species within selected portions of a pFET such that the gate/SD (source/drain) overlap area of the pFET is tailored towards flatband, yet not affecting the workfunction at the device channel region. The structure includes a semiconductor substrate having at least one patterned gate stack located within a pFET device region of the semiconductor substrate. The structure further includes extension regions located within the semiconductor substrate at a footprint of the at least one patterned gate stack. A channel region is also present and is located within the semiconductor substrate beneath the at least one patterned gate stack. The structure further includes a localized workfunction tuning area located within a portion of at least one of the extension regions that is positioned adjacent the channel region as well as within at least a sidewall portion of the at least one gate stack. The localized workfunction tuning area can be formed by ion implantation or annealing.

摘要翻译： 提供了一种半导体结构及其形成方法，其中通过在pFET的选定部分内引入功函数调谐物质来控制栅极感应漏极泄漏，使得pFET的栅极/ SD（源极/漏极）重叠区域为 适应平带，但不影响设备通道区域的功能。 该结构包括具有位于半导体衬底的pFET器件区域内的至少一个图案化栅叠层的半导体衬底。 所述结构还包括位于所述半导体衬底内的所述至少一个图案化栅叠层的覆盖区的扩展区。 沟道区域也存在并且位于至少一个图案化栅叠层下方的半导体衬底内。 该结构进一步包括位于至少一个延伸区域的一部分内的局部功能调谐区域，其位于邻近通道区域以及至少一个栅极叠层的至少一个侧壁部分内。 通过离子注入或退火可形成局部功能调谐区域。

公开(公告)号：US20100207179A1

公开(公告)日：2010-08-19

申请号：US12700807

申请日：2010-02-05

申请人： Roger A. Booth, JR. ,  Kangguo Cheng ,  Chengwen Pei ,  Geng Wang

发明人： Roger A. Booth, JR. ,  Kangguo Cheng ,  Chengwen Pei ,  Geng Wang

IPC分类号： H01L27/108 ,  H01L21/8242

CPC分类号： H01L28/91 ,  H01L21/823431 ,  H01L27/10823 ,  H01L27/1085 ,  H01L27/10876 ,  H01L27/10879 ,  H01L28/60 ,  H01L29/66795 ,  H01L29/785

摘要： A semiconductor fin having a doping of the first conductivity type and a semiconductor column are formed on a substrate. The semiconductor column and an adjoined end portion of the semiconductor fin are doped with dopants of a second conductivity type, which is the opposite of the first conductivity type. The doped semiconductor column constitutes an inner electrode of a capacitor. A dielectric layer and a conductive material layer are formed on the semiconductor fin and the semiconductor column. The conductive material layer is patterned to form an outer electrode for the capacitor and a gate electrode. A single-sided halo implantation may be performed. Source and drain regions are formed in the semiconductor fin to form an access transistor. The source region is electrically connected to the inner electrode of the capacitor. The access transistor and the capacitor collectively constitute a DRAM cell.

摘要翻译： 在衬底上形成具有第一导电类型掺杂的半导体鳍和半导体柱。 所述半导体柱和所述半导体鳍片的邻接端部掺杂有与所述第一导电类型相反的第二导电类型的掺杂剂。 掺杂半导体柱构成电容器的内部电极。 在半导体鳍片和半导体柱上形成介电层和导电材料层。 图案化导电材料层以形成用于电容器的外部电极和栅电极。 可以进行单侧晕圈植入。 源极和漏极区域形成在半导体鳍片中以形成存取晶体管。 源极区域电连接到电容器的内部电极。 存取晶体管和电容器共同构成DRAM单元。