中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

147 records (took 0.027 seconds)

    Sensitized photochemical switching for cholesteric liquid crystal displays
    31.
    发明授权
    Sensitized photochemical switching for cholesteric liquid crystal displays 失效

    公开(公告)号：US07642035B2

    公开(公告)日：2010-01-05

    申请号：US11403970

    申请日：2006-04-13

    Applicant: Deepak Shukla ,  Krishnan Chari

    Inventor： Deepak Shukla ,  Krishnan Chari

    IPC: G11B7/244 ,  G11B7/245 ,  C09K19/58 ,  C09K19/52 ,  G02B6/00 ,  C09K19/38 ,  C09K19/36

    CPC classification number: C09K19/586 ,  C09K19/588 ,  Y10T428/10 ,  Y10T428/1036 ,  Y10T428/1055

    Abstract: The present invention relates to photo-tunable dopant compositions comprising a photo-reactive chiral compound capable of undergoing a photochemical reaction resulting in the loss of chirality, and a triplet sensitizer. The present invention also relates to a display comprising a substrate, a liquid crystalline layer thereon, wherein the liquid crystalline layer comprises a nematic host, at least one chiral dopant, a photo-reacted compound, and a triplet sensitizer, and at least one transparent conductive layer. The present invention also relates to a method of tuning a cholesteric liquid crystal material comprising providing at least one mesogenic compound, at least one triplet sensitizer, and at least one photo-reactive chiral compound; combining the at least one mesogenic compound, at least one triplet sensitizer, and at least one photo-reactive chiral compound to form a mixture; and irradiating the mixture for a period of time.

    N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS
    32.
    发明申请
    N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS 有权
    薄膜晶体管的N型半导体材料

    公开(公告)号：US20090312553A1

    公开(公告)日：2009-12-17

    申请号：US12545337

    申请日：2009-08-21

    Applicant: Deepak Shukla ,  Diane C. Freeman ,  Shelby F. Nelson ,  Jeffrey T. Carey ,  Wendy G. Ahearn

    Inventor： Deepak Shukla ,  Diane C. Freeman ,  Shelby F. Nelson ,  Jeffrey T. Carey ,  Wendy G. Ahearn

    IPC: C07D471/06

    CPC classification number: H01L51/0545 ,  B82Y10/00 ,  B82Y30/00 ,  C09B57/08 ,  H01L51/0008 ,  H01L51/0053 ,  Y02E10/549

    Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, an aromatic moiety, at least one of which moieties is substituted with at least one electron donating group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

    Abstract translation: 一种薄膜晶体管，包括一层有机半导体材料，它包括一个四羧酸二酰亚胺萘系化合物，它具有连接到每个酰亚胺氮原子上的芳族部分，其中至少一个部分被至少一个给电子基团取代。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华沉积到衬底上，其中衬底温度不超过100℃。

    Electrochromic materials and devices
    34.
    发明授权
    Electrochromic materials and devices 有权
    电致变色材料和器件

    公开(公告)号：US07471437B2

    公开(公告)日：2008-12-30

    申请号：US10813885

    申请日：2004-03-31

    Applicant: Jerome R. Lenhard ,  Deepak Shukla

    Inventor： Jerome R. Lenhard ,  Deepak Shukla

    IPC: G02F1/15

    CPC classification number: C09K9/02 ,  C09K2211/1092

    Abstract: The present invention relates to an electrochromic material, and a device utilizing the electrochromic material, comprising a substituted-1,1-dioxo-thiopyran of the general structure I: wherein: X is carbon, nitrogen, oxygen, or sulfur; n is 0, 1 or 2; R3 is independently an electron withdrawing group or a substituted or unsubstituted alky or aryl group; R1 and R5 each independently represent a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted heterocyclic group; and R2 and R4 each independently represent hydrogen, or an electron withdrawing group, or a substituted or unsubstituted alkyl group.

    Abstract translation: 本发明涉及一种电致变色材料，以及一种利用电致变色材料的装置，其包含通式I的取代的1,1-二氧代噻喃，其中：X为碳，氮，氧或硫; n为0,1或2; R3独立地是吸电子基团或取代或未取代的烷基或芳基; R 1和R 5各自独立地表示取代或未取代的烷基，取代或未取代的芳基或取代或未取代的杂环基; R2和R4各自独立地表示氢或吸电子基团，或取代或未取代的烷基。

    Fluorine-containing N,N′-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
    35.
    发明授权
    Fluorine-containing N,N′-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors 有权
    含氟N，N'-二芳基苝基四羧酸二酰亚胺化合物作为薄膜晶体管的N型半导体材料

    公开(公告)号：US07326956B2

    公开(公告)日：2008-02-05

    申请号：US11015897

    申请日：2004-12-17

    Applicant: Deepak Shukla ,  Diane C. Freeman ,  Shelby F. Nelson

    Inventor： Deepak Shukla ,  Diane C. Freeman ,  Shelby F. Nelson

    IPC: H01L29/08 ,  H01L35/24 ,  H01L51/00

    CPC classification number: H01L51/0053 ,  C09B5/62 ,  H01L51/0067 ,  H01L51/0545 ,  H01L51/5048 ,  Y02E10/549 ,  Y02P70/521

    Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide 3,4,9,10-perylene-based compound having, attached to each of the imide nitrogen atoms a carbocyclic or heterocyclic aromatic ring system substituted with one or more fluorine-containing groups. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating ac thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

    Abstract translation: 一种薄膜晶体管包括一层有机半导体材料，它包括四羧酸二酰亚胺3,4,9,10-苝基化合物，它具有连接到每个酰亚胺氮原子上的碳环或杂环芳族环系统，被一个或多个氟取代 包含组。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开的是用于制造交流薄膜晶体管器件的方法，优选通过升华或溶液相沉积到衬底上，其中衬底温度不超过100℃。

    N,N′-di(phenylalky)-substituted perylene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
    36.
    发明授权
    N,N′-di(phenylalky)-substituted perylene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors 有权
    N，N'-二（苯基烷基）取代的苝基四羧酸二酰亚胺化合物作为薄膜晶体管的n型半导体材料

    公开(公告)号：US07198977B2

    公开(公告)日：2007-04-03

    申请号：US11021739

    申请日：2004-12-21

    Applicant: Deepak Shukla ,  Diane C. Freeman ,  Shelby F. Nelson

    Inventor： Deepak Shukla ,  Diane C. Freeman ,  Shelby F. Nelson

    IPC: H01L51/40

    CPC classification number: H01L51/0053 ,  B82Y30/00 ,  C09B5/62 ,  H01L51/0545 ,  Y02E10/549

    Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide 3,4,9,10-perylene-based compound having, attached to each of the imide nitrogen atoms a substituted or unsubsitituted phenylalkyl group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

    Abstract translation: 薄膜晶体管包括一层有机半导体材料，其包含四羧酸二酰亚胺3,4,9,10-苝基化合物，其具有连接到每个酰亚胺氮原子上的取代或未取代的苯基烷基。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华或溶液相沉积到衬底上，其中衬底温度不超过100℃。

    Fluorine-containing N,N'-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
    37.
    发明申请
    Fluorine-containing N,N'-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors 有权
    含氟N，N'-二芳基苝基四羧酸二酰亚胺化合物作为薄膜晶体管的N型半导体材料

    公开(公告)号：US20060131564A1

    公开(公告)日：2006-06-22

    申请号：US11015897

    申请日：2004-12-17

    Applicant: Deepak Shukla ,  Diane Freeman ,  Shelby Nelson

    Inventor： Deepak Shukla ,  Diane Freeman ,  Shelby Nelson

    IPC: H01L29/08 ,  H01L29/04

    CPC classification number: H01L51/0053 ,  C09B5/62 ,  H01L51/0067 ,  H01L51/0545 ,  H01L51/5048 ,  Y02E10/549 ,  Y02P70/521

    Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide 3,4,9,10-perylene-based compound having, attached to each of the imide nitrogen atoms a carbocyclic or heterocyclic aromatic ring system substituted with one or more fluorine-containing groups. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating ac thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

    Abstract translation: 一种薄膜晶体管包括一层有机半导体材料，它包括四羧酸二酰亚胺3,4,9,10-苝基化合物，它具有连接到每个酰亚胺氮原子上的碳环或杂环芳族环系统，被一个或多个氟取代 包含组。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开的是用于制造交流薄膜晶体管器件的方法，优选通过升华或溶液相沉积到衬底上，其中衬底温度不超过100℃。

    Aligned liquid crystal layer containing onium salts and process for increasing the tilt
    38.
    发明申请
    Aligned liquid crystal layer containing onium salts and process for increasing the tilt 审中-公开
    含有鎓盐的对准液晶层和增加倾斜的工艺

    公开(公告)号：US20060068123A1

    公开(公告)日：2006-03-30

    申请号：US11282409

    申请日：2005-11-18

    Applicant: Deepak Shukla ,  Thomas Welter ,  James Elman ,  Samir Farid

    Inventor： Deepak Shukla ,  Thomas Welter ,  James Elman ,  Samir Farid

    IPC: B05D3/00

    CPC classification number: C09K19/582 ,  Y10T428/1005

    Abstract: A process for forming a fixed liquid crystal layer having a predetermined tilt on an orientation layer comprises: a) adding a predetermined amount of an onium salt to a liquid crystal pre-polymer coating solution containing a liquid crystal pre-polymer and a UV initiator selected from the group consisting of benzophenone and acetophenone and their derivatives; benzoin, benzoin ethers, benzil, benzil ketals, fluorenone, xanthanone, alpha and beta naphthyl carbonyl compounds and ketones; b) coating the solution over the orientation layer; c) drying the coating to form a layer; and then d) UV irradiating the layer to fix the liquid crystal molecules.

    Abstract translation: 在取向层上形成具有预定倾斜度的固定液晶层的方法包括：a）将预定量的鎓盐加入到含有液晶预聚物和选择的UV引发剂的液晶预聚物涂布溶液中 由二苯甲酮和苯乙酮及其衍生物组成的组; 苯偶姻，苯偶姻醚，苯偶酰，苯偶酰缩酮，芴酮，呫吨酮，α和β萘基羰基化合物和酮; b）将溶液涂覆在取向层上; c）干燥涂层以形成层; 然后d）UV照射该层以固定液晶分子。

    Novel electrochromic materials and devices
    40.
    发明申请
    Novel electrochromic materials and devices 有权
    新型电致变色材料及装置

    公开(公告)号：US20050219678A1

    公开(公告)日：2005-10-06

    申请号：US10813885

    申请日：2004-03-31

    Applicant: Jerome Lenhard ,  Deepak Shukla

    Inventor： Jerome Lenhard ,  Deepak Shukla

    IPC: C09K9/02 ,  G02F1/15 ,  C07D335/02

    CPC classification number: C09K9/02 ,  C09K2211/1092

    Abstract: The present invention relates to an electrochromic material, and a device utilizing the electrochromic material, comprising a substituted-1,1-dioxo-thiopyran of the general structure I: wherein: X is carbon, nitrogen, oxygen, or sulfur; n is 0, 1 or 2; R3 is independently an electron withdrawing group or a substituted or unsubstituted alky or aryl group; R1 and R5 each independently represent a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted heterocyclic group; and R2 and R4 each independently represent hydrogen, or an electron withdrawing group, or a substituted or unsubstituted alkyl group.

    Abstract translation: 本发明涉及一种电致变色材料，以及一种利用电致变色材料的装置，其包含通式I的取代的1,1-二氧代噻喃，其中：X为碳，氮，氧或硫; n为0,1或2; R3独立地是吸电子基团或取代或未取代的烷基或芳基; R 1和R 5各自独立地表示取代或未取代的烷基，取代或未取代的芳基或取代或未取代的杂环基; R2和R4各自独立地表示氢或吸电子基团，或取代或未取代的烷基。

Patent Agency Ranking