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公开(公告)号：US07807994B2
公开(公告)日：2010-10-05
申请号：US12545337
申请日：2009-08-21
IPC分类号： H01L51/00 , C07D471/02
CPC分类号： H01L51/0545 , B82Y10/00 , B82Y30/00 , C09B57/08 , H01L51/0008 , H01L51/0053 , Y02E10/549
摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, an aromatic moiety, at least one of which moieties is substituted with at least one electron donating group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
摘要翻译： 一种薄膜晶体管，包括一层有机半导体材料，它包括一个四羧酸二酰亚胺萘系化合物，它具有连接到每个酰亚胺氮原子上的芳族部分，其中至少一个部分被至少一个给电子基团取代。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华沉积到衬底上，其中衬底温度不超过100℃。
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2.发明申请N,N'-DI(ARYLALKYL)-SUBSTITUTED NAPHTHALENE-BASED TETRACARBOXYLIC DIIMIDE COMPOUNDS AS N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS 有权N，N'-DI（ARYLALKYL） - 作为N型薄膜晶体管的半导体材料的基于萘基的四嵌段二氧化二铝化合物公开(公告)号：US20090261323A1
公开(公告)日：2009-10-22
申请号：US12474533
申请日：2009-05-29
CPC分类号： H01L51/0053 , B82Y10/00 , B82Y30/00 , C09B57/08 , H01L51/0529 , H01L51/0545 , Y02E10/549
摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted arylalkyl moiety. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
摘要翻译： 一种薄膜晶体管包括一层有机半导体材料，它包含一个四羧酸二酰亚胺萘系化合物，它具有连接到每个酰亚胺氮原子上的取代或未取代的芳烷基部分。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华沉积到衬底上，其中衬底温度不超过100℃。
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3.发明授权N,N′-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors 有权N，N'-二（芳基烷基）取代的萘基四羧酸二酰亚胺化合物作为薄膜晶体管的n型半导体材料公开(公告)号：US07579619B2
公开(公告)日：2009-08-25
申请号：US11110076
申请日：2005-04-20
IPC分类号： H01L35/24
CPC分类号： H01L51/0053 , B82Y10/00 , B82Y30/00 , C09B57/08 , H01L51/0529 , H01L51/0545 , Y02E10/549
摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted arylalkyl moiety. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
摘要翻译： 一种薄膜晶体管包括一层有机半导体材料，它包含一个四羧酸二酰亚胺萘系化合物，它具有连接到每个酰亚胺氮原子上的取代或未取代的芳烷基部分。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华沉积到衬底上，其中衬底温度不超过100℃。
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公开(公告)号：US07629605B2
公开(公告)日：2009-12-08
申请号：US11263111
申请日：2005-10-31
IPC分类号： H01L51/00 , C07D471/02
CPC分类号： H01L51/0545 , B82Y10/00 , B82Y30/00 , C09B57/08 , H01L51/0008 , H01L51/0053 , Y02E10/549
摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, an aromatic moiety, at least one of which moieties is substituted with at least one electron donating group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
摘要翻译： 一种薄膜晶体管，包括一层有机半导体材料，它包括一个四羧酸二酰亚胺萘系化合物，它具有连接到每个酰亚胺氮原子上的芳族部分，其中至少一个部分被至少一个给电子基团取代。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华沉积到衬底上，其中衬底温度不超过100℃。
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5.发明授权N,N′-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors 有权N，N'-二环烷基取代的萘基四羧酸二酰亚胺化合物作为薄膜晶体管的n型半导体材料公开(公告)号：US07422777B2
公开(公告)日：2008-09-09
申请号：US11285238
申请日：2005-11-22
IPC分类号： C09K19/00 , G03C5/00 , B32B27/00 , H01L29/08 , H01L21/322
CPC分类号： H01L51/0053 , B82Y10/00 , B82Y30/00 , C09B57/08 , H01L51/0545 , Y02E10/549 , Y10T428/10 , Y10T428/31721
摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted alicyclic ring system, optionally substituted with electron donating groups. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
摘要翻译： 薄膜晶体管包括一层有机半导体材料，它包括一个四羧酸二酰亚胺萘系化合物，它具有连接到每个酰亚胺氮原子上的取代或未取代的脂环族系，任选被电子给体基团取代。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华沉积到衬底上，其中衬底温度不超过100℃。
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6.发明授权N,N′-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors 有权N，N'-二（芳基烷基）取代的萘基四羧酸二酰亚胺化合物作为薄膜晶体管的n型半导体材料公开(公告)号：US07981719B2
公开(公告)日：2011-07-19
申请号：US12474533
申请日：2009-05-29
IPC分类号： H01L51/40
CPC分类号： H01L51/0053 , B82Y10/00 , B82Y30/00 , C09B57/08 , H01L51/0529 , H01L51/0545 , Y02E10/549
摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted arylalkyl moiety. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
摘要翻译： 一种薄膜晶体管包括一层有机半导体材料，它包含一个四羧酸二酰亚胺萘系化合物，它具有连接到每个酰亚胺氮原子上的取代或未取代的芳烷基部分。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华沉积到衬底上，其中衬底温度不超过100℃。
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公开(公告)号：US20090312553A1
公开(公告)日：2009-12-17
申请号：US12545337
申请日：2009-08-21
IPC分类号： C07D471/06
CPC分类号： H01L51/0545 , B82Y10/00 , B82Y30/00 , C09B57/08 , H01L51/0008 , H01L51/0053 , Y02E10/549
摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, an aromatic moiety, at least one of which moieties is substituted with at least one electron donating group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
摘要翻译： 一种薄膜晶体管，包括一层有机半导体材料，它包括一个四羧酸二酰亚胺萘系化合物，它具有连接到每个酰亚胺氮原子上的芳族部分，其中至少一个部分被至少一个给电子基团取代。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华沉积到衬底上，其中衬底温度不超过100℃。
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8.发明授权Fluorine-containing N,N′-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors 有权含氟N，N'-二芳基苝基四羧酸二酰亚胺化合物作为薄膜晶体管的N型半导体材料公开(公告)号：US07326956B2
公开(公告)日：2008-02-05
申请号：US11015897
申请日：2004-12-17
CPC分类号： H01L51/0053 , C09B5/62 , H01L51/0067 , H01L51/0545 , H01L51/5048 , Y02E10/549 , Y02P70/521
摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide 3,4,9,10-perylene-based compound having, attached to each of the imide nitrogen atoms a carbocyclic or heterocyclic aromatic ring system substituted with one or more fluorine-containing groups. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating ac thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
摘要翻译： 一种薄膜晶体管包括一层有机半导体材料，它包括四羧酸二酰亚胺3,4,9,10-苝基化合物，它具有连接到每个酰亚胺氮原子上的碳环或杂环芳族环系统，被一个或多个氟取代 包含组。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开的是用于制造交流薄膜晶体管器件的方法，优选通过升华或溶液相沉积到衬底上，其中衬底温度不超过100℃。
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9.发明授权N,N′-di(phenylalky)-substituted perylene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors 有权N，N'-二（苯基烷基）取代的苝基四羧酸二酰亚胺化合物作为薄膜晶体管的n型半导体材料公开(公告)号：US07198977B2
公开(公告)日：2007-04-03
申请号：US11021739
申请日：2004-12-21
IPC分类号： H01L51/40
CPC分类号： H01L51/0053 , B82Y30/00 , C09B5/62 , H01L51/0545 , Y02E10/549
摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide 3,4,9,10-perylene-based compound having, attached to each of the imide nitrogen atoms a substituted or unsubsitituted phenylalkyl group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
摘要翻译： 薄膜晶体管包括一层有机半导体材料，其包含四羧酸二酰亚胺3,4,9,10-苝基化合物，其具有连接到每个酰亚胺氮原子上的取代或未取代的苯基烷基。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华或溶液相沉积到衬底上，其中衬底温度不超过100℃。
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公开(公告)号：US07972898B2
公开(公告)日：2011-07-05
申请号：US11861455
申请日：2007-09-26
申请人： Peter J. Cowdery-Corvan , David H. Levy , Thomas D. Pawlik , Diane C. Freeman , Shelby F. Nelson
发明人： Peter J. Cowdery-Corvan , David H. Levy , Thomas D. Pawlik , Diane C. Freeman , Shelby F. Nelson
IPC分类号： C22B19/00 , C03C17/245
CPC分类号： H01L21/02576 , B33Y80/00 , C23C16/407 , C23C16/45504 , C23C16/45544 , C23C16/45551 , C23C16/45574 , H01L21/02554 , H01L21/02565 , H01L21/0262
摘要： The present invention relates to a process of making a zinc-oxide-based thin film semiconductor, for use in a transistor, comprising thin film deposition onto a substrate comprising providing a plurality of gaseous materials comprising first, second, and third gaseous materials, wherein the first gaseous material is a zinc-containing volatile material and the second gaseous material is reactive therewith such that when one of the first or second gaseous materials are on the surface of the substrate the other of the first or second gaseous materials will react to deposit a layer of material on the substrate, wherein the third gaseous material is inert and wherein a volatile indium-containing compound is introduced into the first reactive gaseous material or a supplemental gaseous material.
摘要翻译： 本发明涉及一种制造用于晶体管的氧化锌基薄膜半导体的方法，其包括在衬底上的薄膜沉积，包括提供多种包含第一，第二和第三气态材料的气态材料，其中 第一气体材料是含锌挥发性材料，第二气态材料与其反应，使得当第一或第二气态材料之一位于基材表面上时，第一或第二气态材料中的另一种将反应沉积 衬底上的一层材料，其中所述第三气态材料是惰性的，并且其中将挥发性含铟化合物引入到所述第一反应性气态材料或补充气态材料中。
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