公开(公告)号：US20120170362A1

公开(公告)日：2012-07-05

申请号：US13415261

申请日：2012-03-08

申请人： Dmytro Apalkov ,  Vladimir Nikitin ,  David Druist ,  Steven M. Watts

发明人： Dmytro Apalkov ,  Vladimir Nikitin ,  David Druist ,  Steven M. Watts

IPC分类号： G11C11/15

CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/5607 ,  H01L43/08

摘要： A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The first pinned layer has a first pinned layer magnetic moment and is nonmagnetic layer-free. The first nonmagnetic spacer layer resides between the first pinned and free layers. The free layer resides between the first and second nonmagnetic spacer layers. The second pinned layer has a second pinned layer magnetic moment and is nonmagnetic layer-free. The second nonmagnetic spacer layer resides between the free and second pinned layers. The first and second pinned layer magnetic moments are antiferromagnetically coupled and self-pinned. The magnetic junction is configured to allow the free layer to be switched between stable magnetic states when a write current is passed through the magnetic junction.

摘要翻译： 描述了一种用于提供可用于磁存储器中的磁结的方法和系统。 磁结包括第一和第二固定层，第一和第二非磁性间隔层和自由层。 第一被钉扎层具有第一钉扎层磁矩并且是非磁性层。 第一非磁性间隔层位于第一被钉扎层和自由层之间。 自由层位于第一和第二非磁性间隔层之间。 第二被钉扎层具有第二钉扎层磁矩并且是非磁性层。 第二非磁性间隔层位于自由和第二被钉扎层之间。 第一和第二钉扎层磁矩是反铁磁耦合和自固定的。 磁结被配置为当写入电流通过磁性结时，允许自由层在稳定的磁状态之间切换。

公开(公告)号：US20120039119A1

公开(公告)日：2012-02-16

申请号：US12854628

申请日：2010-08-11

申请人： Dmytro Apalkov

发明人： Dmytro Apalkov

IPC分类号： G11C11/14 ,  H01L29/82

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295

摘要： A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer has a magnetic anisotropy, at least a portion of which is a biaxial anisotropy. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

摘要翻译： 描述了一种用于提供可用于磁性装置中的磁结的方法和系统。 磁结包括钉扎层，非磁性间隔层和自由层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层具有磁各向异性，其至少一部分是双轴各向异性的。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

公开(公告)号：US07800942B2

公开(公告)日：2010-09-21

申请号：US12136916

申请日：2008-06-11

申请人： Eugene Chen ,  Dmytro Apalkov

发明人： Eugene Chen ,  Dmytro Apalkov

IPC分类号： G11C11/15

CPC分类号： G11C11/16

摘要： A method and system for providing a magnetic element and memory utilizing the magnetic element are described. The magnetic element includes a reference layer, a nonferromagnetic spacer layer, and a free layer. The reference layer has a resettable magnetization that is set in a selected direction by a magnetic field generated externally to the reference layer. The reference layer is also magnetically thermally unstable at an operating temperature range and has KuV/kBT is less than fifty five. The spacer layer resides between the reference layer and the free layer. In addition, the magnetic element is configured to allow the free layer to be switched to each of a plurality of states when a write current is passed through the magnetic element.

摘要翻译： 描述了利用磁性元件提供磁性元件和存储器的方法和系统。 磁性元件包括参考层，非铁磁隔离层和自由层。 参考层具有通过在参考层外部产生的磁场而在选定方向上设定的可复位磁化强度。 参考层在工作温度范围内也是磁性不稳定的，KuV / kBT小于五十五。 间隔层位于参考层和自由层之间。 此外，磁性元件被配置为当写入电流通过磁性元件时允许自由层切换到多个状态中的每一个状态。

公开(公告)号：US20100140726A1

公开(公告)日：2010-06-10

申请号：US12328255

申请日：2008-12-04

申请人： Dmytro Apalkov ,  Yunfei Ding

发明人： Dmytro Apalkov ,  Yunfei Ding

IPC分类号： H01L43/02 ,  H01L43/12

CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/161 ,  G11C11/56 ,  G11C2211/5615 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/302 ,  H01L43/12

摘要： A method and system for providing a magnetic element are described. The magnetic element includes pinned and free layers, a nonmagnetic spacer layer between the free and pinned layers, and a stability structure. The free layer is between the spacer layer and the stability structure. The free layer has a free layer magnetization, at least one free layer easy axis, and at least one hard axis. The stability structure includes magnetic layers and is configured to decrease a first magnetic energy corresponding to the free layer magnetization being aligned with the at least one easy axis without decreasing a second magnetic energy corresponding to the free layer magnetization being aligned with the at least one hard axis. The magnetic element is configured to allow the free layer magnetization to be switched to between states when a write current is passed through the magnetic element.

摘要翻译： 描述了一种用于提供磁性元件的方法和系统。 磁性元件包括钉扎和自由层，在自由层和被钉扎层之间的非磁性间隔层，以及稳定结构。 自由层位于间隔层和稳定结构之间。 自由层具有自由层磁化，至少一个自由层容易轴和至少一个硬轴。 稳定结构包括磁性层，并且被配置为减少对应于自由层磁化的第一磁能与至少一个容易轴对准，而不减少对应于自由层磁化的第二磁能与至少一个硬的 轴。 磁性元件被配置为当写入电流通过磁性元件时允许自由层磁化切换到状态之间。

公开(公告)号：US09236561B2

公开(公告)日：2016-01-12

申请号：US13604182

申请日：2012-09-05

申请人： Mohamad Towfik Krounbi ,  Dmytro Apalkov ,  Vladimir Nikitin ,  Alexander A. G. Driskill-Smith

发明人： Mohamad Towfik Krounbi ,  Dmytro Apalkov ,  Vladimir Nikitin ,  Alexander A. G. Driskill-Smith

IPC分类号： H01L21/00 ,  H01L29/82 ,  H01L43/12 ,  H01L43/02 ,  H01L43/08 ,  G11C11/56 ,  G11C11/16 ,  H01L27/22

CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/5607 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

摘要： A magnetic device including memory cells is provided. Each memory cell can store multiple bits corresponding to multiple data storage layers. Desired spacing(s) and desired junction angle(s) for the data storage layers are determined in each memory cell. The desired junction angle(s) and the desired spacing(s) correspond to spin transfer switching currents for the data storage layers having. A magnetoresistive stack including plurality of layers for each of the memory cells is deposited. The memory cells include the data storage layers. A data storage layer layers is spaced apart from nearest data storage layer(s) by a distance corresponding to the desired spacing(s). A mask corresponding to the memory cells is provided on the layers. The memory cells are defined such that each memory cell has the desired junction angle(s) and the desired spacing(s) and such that the data storage layers for each of the memory cells is self-aligned.

摘要翻译： 提供包括存储单元的磁性装置。 每个存储器单元可以存储对应于多个数据存储层的多个位。 在每个存储单元中确定数据存储层的期望间隔和所需的结合角度。 期望的结角和期望的间隔对应于具有数据存储层的自旋转移开关电流。 存储包括用于每个存储器单元的多个层的磁阻堆叠。 存储单元包括数据存储层。 数据存储层层与最近的数据存储层间隔一段与期望间隔相对应的距离。 在层上提供对应于存储单元的掩模。 存储器单元被定义为使得每个存储器单元具有期望的结合角和期望的间隔，并且使得每个存储器单元的数据存储层是自对准的。

公开(公告)号：US20140225643A1

公开(公告)日：2014-08-14

申请号：US13557376

申请日：2012-07-25

申请人： Dmytro Apalkov ,  Eugene Chen ,  Kaveh Milaninia

发明人： Dmytro Apalkov ,  Eugene Chen ,  Kaveh Milaninia

IPC分类号： H03K19/08 ,  H01L43/12 ,  H01L27/22

CPC分类号： H01L27/224 ,  H01L43/08 ,  H01L43/12 ,  Y10S977/74

摘要： A method and system provide and program a nonvolatile logic device. The nonvolatile logic device includes input and output magnetic junctions and at least one magnetic junction between the input and output magnetic junctions. The input magnetic junction includes an input junction free layer having an input junction easy axis. The input magnetic junction may be switchable using a current driven through the magnetic junction. The output magnetic junction includes an output junction free layer having an output junction easy axis. Each of the magnetic junction(s) includes a free layer having an easy axis. The input magnetic junction is magnetically coupled to the output magnetic junction through the magnetic junction(s). In some aspects, the method includes switching the magnetic moment(s) of the input magnetic junction from a first state to a second state, applying and then removing magnetic field(s) along the hard axis of the at least one magnetic junction.

摘要翻译： 方法和系统提供和编程非易失性逻辑器件。 非易失性逻辑器件包括输入和输出磁结以及输入和输出磁性结之间的至少一个磁结。 输入磁结包括具有输入结易轴的输入结自由层。 可以使用通过磁结驱动的电流来切换输入磁结。 输出磁结包括具有输出结容易轴的输出结自由层。 每个磁结包括具有容易轴的自由层。 输入磁结通过磁结磁耦合到输出磁结。 在一些方面，该方法包括将输入磁结的磁矩从第一状态切换到第二状态，然后施加沿着至少一个磁结的硬轴移除磁场。

公开(公告)号：US20140175577A1

公开(公告)日：2014-06-26

申请号：US13751304

申请日：2013-01-28

申请人： Dmytro Apalkov ,  Alexey Vasilyevitch Khvalkovskiy ,  Vladimir Nikitin ,  Steven M. Watts

发明人： Dmytro Apalkov ,  Alexey Vasilyevitch Khvalkovskiy ,  Vladimir Nikitin ,  Steven M. Watts

IPC分类号： H01L29/82 ,  H01L21/02

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/12

摘要： A method and system provide a magnetic junction usable in a magnetic device and which resides on a substrate. The magnetic junction includes a reference layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The free layer, the nonmagnetic spacer layer and the reference layer form nonzero angle(s) with the substrate. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

摘要翻译： 一种方法和系统提供可用于磁性装置并位于基板上的磁结。 磁结包括参考层，非磁性间隔层和自由层。 非磁性间隔层位于参考层和自由层之间。 自由层，非磁性间隔层和参考层与衬底形成非零角度。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

公开(公告)号：US08704547B2

公开(公告)日：2014-04-22

申请号：US13562038

申请日：2012-07-30

申请人： Dmytro Apalkov ,  David Druist

发明人： Dmytro Apalkov ,  David Druist

IPC分类号： G06F7/38

CPC分类号： H03K19/20 ,  Y10T29/49117

摘要： A logic device is described. The logic device includes magnetic input/channel regions, magnetic sensor region(s), and sensor(s) coupled with the magnetic sensor region(s). Each magnetic input/channel region is magnetically biased in a first direction. The magnetic sensor region(s) are magnetically biased in a second direction different from the first direction such that domain wall(s) reside in the magnetic input/channel regions if the logic device is in a quiescent state. The sensor(s) output a signal based on a magnetic state of the magnetic sensor region(s). The input/channel regions and the magnetic sensor region(s) are configured such that the domain wall(s) may move into the magnetic sensor region(s) in response to a logic signal being provided to the magnetic input region(s). The magnetic input/channel region(s) include FexCoyNizM1q1M2q2, with x+y+z+q1+q2=1, x, y, z, q1, q2 at least zero and M1 and M2 being nonmagnetic.

摘要翻译： 描述逻辑设备。 逻辑器件包括磁性输入/沟道区域，磁性传感器区域和与磁性传感器区域耦合的传感器。 每个磁性输入/沟道区域在第一方向上被磁偏置。 磁传感器区域在不同于第一方向的第二方向上被磁偏置，使得如果逻辑器件处于静止状态，则域壁驻留在磁性输入/沟道区域中。 传感器基于磁传感器区域的磁状态输出信号。 输入/通道区域和磁性传感器区域被配置为使得响应于提供给磁性输入区域的逻辑信号，畴壁可以移动到磁性传感器区域中。 磁性输入/通道区域包括FexCoyNizM1q1M2q2，x + y + z + q1 + q2 = 1，x，y，z，q1，q2至少为零，M1和M2为非磁性。

公开(公告)号：US20130161768A1

公开(公告)日：2013-06-27

申请号：US13334045

申请日：2011-12-21

申请人： Alexey Vasilyevitch Khvalkovskiy ,  Vladimir Nikitin ,  Dmytro Apalkov ,  Mohamad Towfik Krounbi

发明人： Alexey Vasilyevitch Khvalkovskiy ,  Vladimir Nikitin ,  Dmytro Apalkov ,  Mohamad Towfik Krounbi

IPC分类号： H01L29/82

CPC分类号： H01F10/3263 ,  G11C11/161 ,  H01F10/3236 ,  H01F10/3272 ,  H01F10/3286 ,  H01L43/08 ,  H01L43/10

摘要： A magnetic device has a contact structure including a magnetic material therein. The contact structure is magnetostatically and/or electrically coupled to a magnetic element such as one having a magnetic tunneling junction (MTJ) multilayer structure. The magnetic material included in the contact structure is configured to compensate for an offset field acting on the free layer of the magnetic element by reference layers of the magnetic element.

摘要翻译： 磁性装置具有包括磁性材料的接触结构。 接触结构是磁性地和/或电耦合到诸如具有磁性隧道结（MTJ）多层结构的磁性元件的磁性元件。 包括在接触结构中的磁性材料被配置为通过磁性元件的参考层补偿作用在磁性元件的自由层上的偏移场。

公开(公告)号：US20130154036A1

公开(公告)日：2013-06-20

申请号：US13332305

申请日：2011-12-20

申请人： Xueti Tang ,  Dmytro Apalkov ,  Steven M. Watts ,  Kiseok Moon ,  Vladimir Nikitin

发明人： Xueti Tang ,  Dmytro Apalkov ,  Steven M. Watts ,  Kiseok Moon ,  Vladimir Nikitin

IPC分类号： H01L43/10 ,  H01L43/12

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/5607 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295

摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, at least one insulating layer, and at least one magnetic insertion layer adjoining the at least one insulating layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The at least one insulating layer is adjacent to at least one of the free layer and the pinned layer. The at least one magnetic insertion layer adjoins the at least one insulating layer. In some aspects, the insulating layer(s) include at least one of magnesium oxide, aluminum oxide, tantalum oxide, ruthenium oxide, titanium oxide, and nickel oxide The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

摘要翻译： 一种方法和系统提供可用于磁性装置的磁结。 磁结包括钉扎层，非磁性间隔层，自由层，至少一个绝缘层以及与至少一个绝缘层邻接的至少一个磁性插入层。 非磁性间隔层位于被钉扎层和自由层之间。 至少一个绝缘层与自由层和钉扎层中的至少一个相邻。 所述至少一个磁性插入层邻接所述至少一个绝缘层。 在一些方面，绝缘层包括氧化镁，氧化铝，氧化钽，氧化钌，氧化钛和氧化镍中的至少一种。磁结被构造成使得自由层可在多个稳定的 写入电流通过磁性结时的磁状态。