公开(公告)号：USD845568S1

公开(公告)日：2019-04-09

申请号：US29545532

申请日：2015-11-13

Applicant: EBARA CORPORATION

Designer： Yu Ishii ,  Kenya Ito ,  Hirohiko Ueda

公开(公告)号：USD777546S1

公开(公告)日：2017-01-31

申请号：US29545509

申请日：2015-11-13

Applicant: EBARA CORPORATION

Designer： Yu Ishii ,  Kenya Ito ,  Hirohiko Ueda

公开(公告)号：US09492910B2

公开(公告)日：2016-11-15

申请号：US14823967

申请日：2015-08-11

Applicant: EBARA CORPORATION

Inventor： Yu Ishii ,  Hiroyuki Kawasaki ,  Masayuki Nakanishi ,  Kenya Ito ,  Kenji Kodera ,  Michiyoshi Yamashita

IPC: B24B9/00 ,  B24D11/00 ,  B24B21/00 ,  B24B21/08 ,  B24B21/18 ,  B24B27/00 ,  B24B49/12 ,  B24B9/06 ,  H01L21/304 ,  H01L21/3105

CPC classification number: B24D11/001 ,  B24B9/065 ,  B24B21/002 ,  B24B21/004 ,  B24B21/008 ,  B24B21/08 ,  B24B21/18 ,  B24B27/0076 ,  B24B49/12 ,  H01L21/304 ,  H01L21/3105

Abstract: There is disclosed a method of polishing a peripheral portion of a wafer having a hard film with use of an abrasive film while preventing damage to the abrasive film. The polishing method uses an abrasive film including a base film made of polyimide, a binder made of polyimide, and abrasive grains held by the binder. The polishing method includes: rotating a silicon substrate having a surface on which a silicon carbide film is formed; and removing the silicon carbide film from a peripheral portion of the silicon substrate by pressing the abrasive film at a low force against the silicon carbide film on the peripheral portion of the silicon substrate.

Abstract translation: 公开了一种利用磨料膜研磨具有硬质膜的晶片的周边部分的方法，同时防止对研磨膜的损伤。 抛光方法使用包括由聚酰亚胺制成的基膜，由聚酰亚胺制成的粘合剂和由粘合剂保持的磨粒的研磨膜。 抛光方法包括：旋转具有形成有碳化硅膜的表面的硅衬底; 并且通过以低的力将研磨膜压在硅衬底的周边部分上的碳化硅膜上，从硅衬底的周边部分去除碳化硅膜。