Abstract:
A method for fabricating an abrasive firm includes preparing a base film, coating the base film with a first paint which contains no abrasive grain but contains a binder resin, and drying the paint to form a first layer. The method further includes coating the first layer with a second paint which contains the abrasive grains and the binder resin, and drying the paint to form a second layer. The method further includes heating the first layer and the second layer for imidization.
Abstract:
A polishing unit of a polishing apparatus according to an embodiment includes: a polishing head having a pressing member configured to hold a polishing tape and press the polishing tape against a peripheral portion of a substrate from above; a tape supply and recovery mechanism configured to supply the polishing tape to the polishing head and recover the polishing tape from the polishing head; a first moving mechanism configured to move the polishing head in a radial direction of the substrate; and a second moving mechanism configured to move the tape supply and recovery mechanism in the radial direction of the substrate. The positioning unit includes a positioning block having a contacting surface, and alignment of the polishing tape is conducted by the second moving mechanism moving the tape supply and recovery mechanism so that a substrate-side edge of the polishing tape makes contact with the contacting surface.
Abstract:
There is disclosed a substrate processing apparatus which is capable of detecting whether a substrate, such as a wafer, supported by a fluid is properly present in a predetermined processing position or not. The substrate processing apparatus includes at least one distance sensor configured to measure a distance between a scrubber and a hydrostatic support structure; and a processing controller configured to calculate a gap between the hydrostatic support structure and the surface of the substrate from a measured value of the distance and determine whether the gap falls within a predetermined range or not.
Abstract:
The present invention relates to a chemical mechanical polishing (CMP) apparatus for polishing a workpiece, such as a metal body, to a mirror finish. The chemical mechanical polishing apparatus includes: a polishing pad (2) having an annular polishing surface (2a) which has a curved vertical cross-section; a workpiece holder (11) for holding a workpiece (W) having a polygonal shape; a rotating device (15) configured to rotate the workpiece holder (11) about an axis of the workpiece (W); a pressing device (14) configured to press a periphery of the workpiece (W) against the annular polishing surface (2a); and an operation controller (25) configured to change a speed at which the rotating device (15) rotates the workpiece (W) according to a rotation angle of the workpiece (W). The pressing device (14) is disposed more inwardly than the workpiece holder (11) in a radial direction of the polishing table (3).
Abstract:
A method and an apparatus which can efficiently polish an entirety of a back surface, including an outermost area thereof, of a substrate while the back surface of the substrate faces downward are disclosed. The method includes rotating a substrate by rotating a plurality of rollers about their respective own axes while the rollers contact a periphery of the substrate with a back surface of the substrate facing downward; and polishing an entirety of the back surface of the substrate by moving a polishing tool relative to the substrate while supplying a liquid onto the back surface of the substrate and while placing the polishing tool in contact with the back surface of the substrate, the polishing tool being located at a lower side of the substrate.
Abstract:
A method and an apparatus for processing a peripheral portion of a substrate, such as a wafer, are disclosed. The substrate processing method includes: holding a substrate on a substrate stage; rotating the substrate stage and the substrate about an axis of the substrate stage; directing a laser beam to an edge portion of the rotating substrate to form an annular crack in the substrate; and pressing a polishing tool against the edge portion of the rotating substrate to form a stepped recess in a peripheral portion of the substrate.
Abstract:
A polishing pad for polishing a workpiece to a mirror finish is attached to a rotatable polishing table of a chemical mechanical polishing apparatus. The workpiece, such as a metal body, is held by a carrier and pressed against the polishing pad. This polishing pad includes: an elastic pad having a polishing surface; a deformable base layer that supports the elastic pad; and an adhesive layer that joins the elastic pad to the base layer.
Abstract:
A polishing unit of a polishing apparatus according to an embodiment includes: a polishing head having a pressing member configured to hold a polishing tape and press the polishing tape against a peripheral portion of a substrate from above; a tape supply and recovery mechanism configured to supply the polishing tape to the polishing head and recover the polishing tape from the polishing head; a first moving mechanism configured to move the polishing head in a radial direction of the substrate; and a second moving mechanism configured to move the tape supply and recovery mechanism in the radial direction of the substrate. The positioning unit includes a positioning block having a contacting surface, and alignment of the polishing tape is conducted by the second moving mechanism moving the tape supply and recovery mechanism so that a substrate-side edge of the polishing tape makes contact with the contacting surface.
Abstract:
A method for manufacturing a semiconductor device makes it possible to efficiently polish with a polishing tape a peripheral portion of a silicon substrate under polishing conditions particularly suited for a deposited film and for silicon underlying the deposited film. The method includes pressing a first polishing tape against a peripheral portion of a device substrate having a deposited film on a silicon surface while rotating the device substrate at a first rotational speed, thereby removing the deposited film lying in the peripheral portion of the device substrate and exposing the underlying silicon. A second polishing tape is pressed against the exposed silicon lying in the peripheral portion of the device substrate while rotating the device substrate at a second rotational speed, thereby polishing the silicon to a predetermined depth.
Abstract:
A substrate processing apparatus removes foreign substances from a substrate at high removal efficiency. The substrate processing apparatus includes: a scrubber to perform surface processing of the substrate by bringing a scrubbing member into sliding contact with a first surface of the substrate, a hydrostatic support mechanism for supporting a second surface of the substrate via fluid pressure without contacting the substrate, the second surface being an opposite surface of the first surface, a cleaner to clean the processed substrate, and a dryer to dry the cleaned substrate. The scrubber brings the scrubbing member into sliding contact with the first surface while rotating the scrubbing member about a central axis of the scrubber.