公开(公告)号：US20140170333A1

公开(公告)日：2014-06-19

申请号：US13978005

申请日：2012-01-20

申请人： Eric Mazur ,  Kevin L. Vora ,  SeungYeon Kang

发明人： Eric Mazur ,  Kevin L. Vora ,  SeungYeon Kang

IPC分类号： B05D3/06

CPC分类号： B05D3/06 ,  B22F1/0018 ,  B22F2999/00 ,  B23K26/32 ,  B23K26/324 ,  B23K26/34 ,  B23K35/0244 ,  B23K2103/30 ,  B23K2103/50 ,  B22F9/30 ,  B22F2202/11

摘要： In one aspect, a method for fabricating metal structures in two or three dimensions is disclosed, which includes providing a mixture of a polymer, a metal precursor and a solvent, and applying the mixture to a surface of a substrate. The applied mixture can then be cured (e.g., via a heat treatment) to generate a polymeric layer (e.g., a polymeric film) with ions associated with the metal precursor distributed therein. Subsequently, radiation (e.g., radiation pulses) at a wavelength to which the polymeric layer is substantially transparent is focused onto at least one location of the polymeric layer so as to cause chemical reduction of metal ions associated with the metal precursor within at least a portion of that location, thereby generating at least one metalized region.

摘要翻译： 一方面，公开了一种用于制造二维或三维金属结构的方法，其包括提供聚合物，金属前体和溶剂的混合物，并将该混合物施加到基底的表面。 然后可以将所施加的混合物固化（例如通过热处理）以产生具有与分布在其中的金属前体相关联的离子的聚合物层（例如，聚合物膜）。 随后，在聚合物层基本上透明的波长处的辐射（例如，辐射脉冲）被聚焦到聚合物层的至少一个位置上，以便在至少一部分内引起与金属前体相关联的金属离子的化学还原 从而产生至少一个金属化区域。

公开(公告)号：US08604580B2

公开(公告)日：2013-12-10

申请号：US13267618

申请日：2011-10-06

申请人： Eric Mazur ,  James Edward Carey

发明人： Eric Mazur ,  James Edward Carey

IPC分类号： H01L31/0232 ,  H01L31/00

CPC分类号： H01L31/02363 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/268 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/0288 ,  H01L31/036 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/94

摘要： In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.

公开(公告)号：US20120171746A1

公开(公告)日：2012-07-05

申请号：US13382314

申请日：2010-06-11

申请人： Eric Mazur ,  Alexander Heisterkamp ,  Eric Diebold

发明人： Eric Mazur ,  Alexander Heisterkamp ,  Eric Diebold

IPC分类号： C12N13/00 ,  C12M1/42

CPC分类号： C12M35/02

摘要： The invention is directed to a method for the manipulation of at least one cell, the method comprising the steps of depositing a metal onto the surface of a substrate, placing the at least one cell at or near the surface of the substrate, and irradiating the surface of the substrate with at least one laser pulse. The inventive method is characterized by the formation of surface structures with a size of one micrometer or less on the surface of the substrate prior to depositing the metal thereon. The invention is also directed to a system for the manipulation of at least one cell, the system comprising a substrate with surface structures having a size of 1 micrometer or less, wherein a metal is deposited on the surface structures, and wherein the system further comprises a laser for irradiating the surface structures.

摘要翻译： 本发明涉及一种用于操纵至少一个电池的方法，所述方法包括以下步骤：将金属沉积到衬底的表面上，将所述至少一个电池放置在衬底的表面或其附近， 具有至少一个激光脉冲的衬底表面。 本发明的方法的特征在于在其上沉积金属之前，在基板的表面上形成尺寸为1微米或更小的表面结构。 本发明还涉及一种用于操纵至少一个电池的系统，该系统包括具有1微米或更小尺寸的表面结构的衬底，其中金属沉积在表面结构上，并且其中该系统还包括 用于照射表面结构的激光。

公开(公告)号：US20120024364A1

公开(公告)日：2012-02-02

申请号：US13267618

申请日：2011-10-06

申请人： James E. Carey, III ,  Eric Mazur

发明人： James E. Carey, III ,  Eric Mazur

IPC分类号： H01L31/00 ,  H01L31/028

CPC分类号： H01L31/02363 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/268 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/0288 ,  H01L31/036 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/94

摘要： In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.

摘要翻译： 一方面，本发明提供一种硅光电检测器，其具有掺杂有平均浓度在约0.5原子％至约1.5原子％范围内的硫夹杂物的表面层。 表面层与衬底的下面部分形成二极管结。 多个电触点允许向结点施加反向偏置电压，以便于响应于表面层的照射而产生电信号，例如光电流。 对于约250nm至约1050nm范围内的入射波长，光电探测器表现出大于约1A / W的响应度，对于较长波长（例如高达约3.5微米），响应度大于约0.1A / W。

公开(公告)号：US08080467B2

公开(公告)日：2011-12-20

申请号：US12776694

申请日：2010-05-10

申请人： James Edward Carey, III ,  Eric Mazur

发明人： James Edward Carey, III ,  Eric Mazur

IPC分类号： H01L21/26 ,  H01L21/42 ,  H01L21/44

CPC分类号： H01L31/02363 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/268 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/0288 ,  H01L31/036 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/94

摘要： In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.

摘要翻译： 一方面，本发明提供一种硅光电检测器，其具有掺杂有平均浓度在约0.5原子％至约1.5原子％范围内的硫夹杂物的表面层。 表面层与衬底的下面部分形成二极管结。 多个电触点允许向结点施加反向偏置电压，以便于响应于表面层的照射而产生电信号，例如光电流。 对于约250nm至约1050nm范围内的入射波长，光电探测器表现出大于约1A / W的响应度，对于较长波长（例如高达约3.5微米），响应度大于约0.1A / W。

公开(公告)号：US20110121206A1

公开(公告)日：2011-05-26

申请号：US13021409

申请日：2011-02-04

申请人： Eric Mazur ,  Mengyan Shen

发明人： Eric Mazur ,  Mengyan Shen

IPC分类号： G21G5/00

CPC分类号： H01L21/268 ,  B23K26/1224 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0259 ,  H01L21/02686 ,  H01L21/2252 ,  H01L21/302 ,  H01L21/67075 ,  Y10S438/94

摘要： The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

摘要翻译： 本发明通常提供具有通过用超短激光脉冲照射表面而产生的亚微米尺寸表面特征的半导体衬底。 一方面，公开了一种处理半导体衬底的方法，其包括将衬底的至少一部分表面与流体接触，并将该表面部分暴露于一个或多个飞秒脉冲，以便修改 那部分。 该修改可以包括例如在表面的上层中生成多个亚微米尺寸的尖峰。

公开(公告)号：US07884439B2

公开(公告)日：2011-02-08

申请号：US12365513

申请日：2009-02-04

申请人： Eric Mazur ,  James E. Carey, III

发明人： Eric Mazur ,  James E. Carey, III

IPC分类号： H01L31/06

CPC分类号： H01L31/02363 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/268 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/0288 ,  H01L31/036 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/94

摘要： In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.

公开(公告)号：US07781856B2

公开(公告)日：2010-08-24

申请号：US12365492

申请日：2009-02-04

申请人： Eric Mazur ,  James E. Carey, III

发明人： Eric Mazur ,  James E. Carey, III

IPC分类号： H01L31/06

CPC分类号： H01L31/02363 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/268 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/0288 ,  H01L31/036 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/94

摘要： In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.

摘要翻译： 一方面，本发明提供一种硅光电检测器，其具有掺杂有平均浓度在约0.5原子％至约1.5原子％范围内的硫夹杂物的表面层。 表面层与衬底的下面部分形成二极管结。 多个电触点允许向结点施加反向偏置电压，以便于响应于表面层的照射而产生电信号，例如光电流。 对于约250nm至约1050nm范围内的入射波长，光电探测器表现出大于约1A / W的响应度，对于较长波长（例如高达约3.5微米），响应度大于约0.1A / W。

公开(公告)号：US20100208237A1

公开(公告)日：2010-08-19

申请号：US12094719

申请日：2008-01-22

申请人： Eric Mazur ,  Eric Diebold ,  Tommaso Baldacchini

发明人： Eric Mazur ,  Eric Diebold ,  Tommaso Baldacchini

IPC分类号： G01J3/44 ,  B05D3/06 ,  G01J3/00 ,  B32B3/00

CPC分类号： G01N21/658 ,  B23K26/0006 ,  B23K26/352 ,  B23K2101/34 ,  B23K2103/42 ,  B23K2103/50 ,  B29C33/3878 ,  B29C33/40 ,  Y10T428/24355

摘要： The present invention generally provides substrates for use in a variety of analytical and/or diagnostic applications as well as optical systems that employ them, in particular systems based on surface enhanced Raman spectroscopy (SERS). In one aspect, the invention provides polymeric substrates having conductive surfaces that exhibit micron-sized, and preferably submicron-sized, structures. In other aspects, methods for fabricating such substrates are disclosed, including a step of irradiating a mold surface with a plurality of short laser pulses to form micron-sized or submicron-sized structures and the mold surface and generating the polymeric substrate by replication from the mold surface.

摘要翻译： 本发明通常提供用于各种分析和/或诊断应用的基板以及采用它们的光学系统，特别是基于表面增强拉曼光谱（SERS）的系统。 在一个方面，本发明提供具有导电表面的聚合物基材，其具有微米尺寸，优选亚微米尺寸的结构。 在其它方面，公开了用于制造这种基底的方法，包括用多个短激光脉冲照射模具表面以形成微米级或亚微米尺寸的结构和模具表面并通过从 模具表面。

公开(公告)号：US20090174026A1

公开(公告)日：2009-07-09

申请号：US12365513

申请日：2009-02-04

申请人： James E. Carey, III ,  Eric Mazur

发明人： James E. Carey, III ,  Eric Mazur

IPC分类号： H01L31/103

CPC分类号： H01L31/02363 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/268 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/0288 ,  H01L31/036 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/94

摘要： In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.