公开(公告)号：US07916433B2

公开(公告)日：2011-03-29

申请号：US12816108

申请日：2010-06-15

申请人： Yiming Huai ,  Zhitao Diao ,  Eugene Youjun Chen

发明人： Yiming Huai ,  Zhitao Diao ,  Eugene Youjun Chen

IPC分类号： G11B5/127 ,  G11C11/14

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11C11/161 ,  H01L43/10 ,  Y10T428/115

摘要： A method and system for providing a magnetic element are described. The method and system include providing a pinned layer, a barrier layer, and a free layer. The free layer includes a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first ferromagnetic layer and the second ferromagnetic layer. The barrier layer resides between the pinned layer and the free layer and includes MgO. The first ferromagnetic layer resides between the barrier layer and the intermediate layer. The first ferromagnetic layer includes at least one of CoFeX and CoNiFeX, with X being selected from the group of B, P, Si, Nb, Zr, Hf, Ta, Ti, and being greater than zero atomic percent and not more than thirty atomic percent. The first ferromagnetic layer is ferromagnetically coupled with the second ferromagnetic layer. The intermediate layer is configured such that the first ferromagnetic layer has a first crystalline orientation and the second ferromagnetic layer has a second crystalline orientation different from the first ferromagnetic layer.

摘要翻译： 描述了一种用于提供磁性元件的方法和系统。 该方法和系统包括提供钉扎层，阻挡层和自由层。 自由层包括第一铁磁层，第二铁磁层和第一铁磁层与第二铁磁层之间的中间层。 阻挡层位于被钉扎层和自由层之间，并且包括MgO。 第一铁磁层位于阻挡层和中间层之间。 第一铁磁层包括CoFeX和CoNiFeX中的至少一种，其中X选自B，P，Si，Nb，Zr，Hf，Ta，Ti，并且大于零原子百分比且不超过三十个原子 百分。 第一铁磁层与第二铁磁层铁磁耦合。 中间层被配置为使得第一铁磁层具有第一结晶取向，而第二铁磁层具有不同于第一铁磁层的第二晶体取向。

公开(公告)号：US20110064969A1

公开(公告)日：2011-03-17

申请号：US12560362

申请日：2009-09-15

申请人： Eugene Youjun Chen ,  Shengyuan Wang

发明人： Eugene Youjun Chen ,  Shengyuan Wang

IPC分类号： G11B5/72

CPC分类号： H01F10/324 ,  B82Y25/00 ,  G11B5/1278 ,  G11B5/39 ,  G11C11/15 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3286 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1121 ,  Y10T428/1143

摘要： Techniques and magnetic devices associated with a magnetic element that includes a fixed layer having a fixed layer magnetization and perpendicular anisotropy, a nonmagnetic spacer layer, and a free layer having a changeable free layer magnetization and perpendicular anisotropy.

摘要翻译： 与包括具有固定层磁化和垂直各向异性的固定层的磁性元件相关联的技术和磁性装置，非磁性间隔层和具有可变自由层磁化和垂直各向异性的自由层。

公开(公告)号：US07489541B2

公开(公告)日：2009-02-10

申请号：US11210452

申请日：2005-08-23

申请人： Mahendra Pakala ,  Eugene Youjun Chen ,  Yiming Huai

发明人： Mahendra Pakala ,  Eugene Youjun Chen ,  Yiming Huai

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/3281 ,  H01L43/10

摘要： A method and system for providing a magnetic element are disclosed. The method and system include providing a pinned layer, providing a spacer layer, and providing a free layer. The free layer is ferrimagnetic and includes at least one of a conductive ferrite, a garnet, a ferrimagnetic alloy excluding a rare earth, a heavy rare-earth-transition metal alloy, a half-metallic ferrimagnetic, and a bilayer. The bilayer includes a rare earth-transition metal alloy layer and a spin current enhancement layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.

摘要翻译： 公开了一种用于提供磁性元件的方法和系统。 该方法和系统包括提供钉扎层，提供间隔层，并提供自由层。 自由层是亚铁磁性的，并且包括导电铁氧体，石榴石，除稀土之外的亚铁磁合金，重稀土 - 过渡金属合金，半金属亚铁磁性和双层中的至少一种。 双层包括稀土 - 过渡金属合金层和自旋电流增强层。 磁性元件配置成当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。

公开(公告)号：US20080205121A1

公开(公告)日：2008-08-28

申请号：US11361267

申请日：2006-02-24

申请人： Eugene Youjun Chen ,  Yiming Huai

发明人： Eugene Youjun Chen ,  Yiming Huai

IPC分类号： G11C11/00 ,  G11C5/14 ,  G11C7/00

CPC分类号： G11C11/1697 ,  G11C11/1653 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C2013/0071 ,  G11C2013/0073

摘要： A method and system for providing and using a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element is programmed by write currents driven through the magnetic element in a first or second direction. In one aspect, the method and system include providing a voltage supply and a voltage pump coupled with the magnetic storage cells and the voltage supply. The voltage supply provides a supply voltage. The voltage pump provides to the selection device a bias voltage having a magnitude greater than the supply voltage. Another aspect includes providing a silicon on oxide transistor as the selection device. Another aspect includes providing to the body of the transistor a body bias voltage that is a first voltage when the transistor is off and a second voltage when the transistor is on.

摘要翻译： 描述了一种用于提供和使用磁存储器的方法和系统。 该方法和系统包括提供多个磁存储单元。 每个磁存储单元包括磁性元件和与磁性元件耦合的选择装置。 通过在第一或第二方向通过磁性元件驱动的写入电流来对磁性元件进行编程。 一方面，该方法和系统包括提供与磁存储单元和电压源耦合的电压源和电压泵。 电源提供电源电压。 电压泵向选择装置提供具有大于电源电压的幅度的偏置电压。 另一方面包括在氧化物晶体管上提供硅作为选择装置。 另一方面包括向晶体管的主体提供当晶体管截止时为第一电压的体偏置电压，以及晶体管导通时的第二电压。

公开(公告)号：US20070297223A1

公开(公告)日：2007-12-27

申请号：US11476171

申请日：2006-06-26

申请人： Eugene Youjun Chen ,  Yiming Huai ,  Alex Fischer Panchula ,  Lien-Chang Wang ,  Xiao Luo

发明人： Eugene Youjun Chen ,  Yiming Huai ,  Alex Fischer Panchula ,  Lien-Chang Wang ,  Xiao Luo

IPC分类号： G11C11/15

CPC分类号： G11C11/16

摘要： A method and system for providing a magnetic memory is described. The magnetic memory includes magnetic storage cells in an array, bit lines, and source lines. Each magnetic storage cell includes at least one magnetic element. The magnetic element(s) are programmable by write currents driven through the magnetic element(s). Each magnetic element has free and pinned layer(s) and a dominant spacer. The magnetic memory is configured such that either the read current(s) flow from the free layer(s) to the dominant spacer if the maximum low resistance state read current divided by the minimum low resistance state write current is greater than the maximum high resistance state read current divided by the minimum high resistance state write current or the read current(s) flow from the dominant spacer to the free layer(s) if the maximum low resistance state read current divided by the minimum low resistance state write current is less than the maximum high resistance state read current divided by the minimum high resistance state write current.

摘要翻译： 描述了一种用于提供磁存储器的方法和系统。 磁存储器包括阵列中的磁存储单元，位线和源极线。 每个磁存储单元包括至少一个磁性元件。 磁性元件可以通过驱动通过磁性元件的写入电流来编程。 每个磁性元件具有自由和固定的层和主要间隔物。 如果最大低电阻状态读取电流除以最小低电阻状态写入电流除以最大高电阻，则磁存储器被配置为使得读取电流从自由层流向主要间隔物 如果最小低电阻状态读取电流除以最小低电阻状态写入电流，则状态读取电流除以最小高电阻状态写入电流或从主要间隔物到自由层的读取电流（s） 比最大高电阻状态读取电流除以最小高电阻状态写入电流。

公开(公告)号：US07286395B2

公开(公告)日：2007-10-23

申请号：US11260778

申请日：2005-10-27

申请人： Eugene Youjun Chen ,  Yiming Huai

发明人： Eugene Youjun Chen ,  Yiming Huai

IPC分类号： G11C11/00

CPC分类号： G11C11/1653 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673

摘要： A method and system for providing a magnetic memory is described. The magnetic memory includes a plurality of magnetic storage cell and at least one bit line and a plurality of source lines corresponding to the plurality of magnetic storage cells. Each magnetic storage cell includes a magnetic element that is programmed to a high resistance state by a first write current driven through the magnetic element in a first direction and to a low resistance state by a second write current driven through the magnetic element in a second direction. The bit line(s) and the source lines are configured to drive the first write current through the magnetic element in the first direction, to drive the second write current through the magnetic element in the second direction, and to drive at least one read current through the magnetic element in a third direction that does not destabilize the low resistance state.

公开(公告)号：US06469926B1

公开(公告)日：2002-10-22

申请号：US09532721

申请日：2000-03-22

申请人： Eugene Youjun Chen

发明人： Eugene Youjun Chen

IPC分类号： G11C1100

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G11B5/3909 ,  H01F10/3254 ,  H01F10/3263 ,  H01F41/302

摘要： An improved and novel magnetic element and fabrication method. The magnetic element (10;30) including a bottom pinned ferromagnetic layer (12;32) and a top pinned ferromagnetic layer (20;40) fabricated antiparallel to one another. The magnetic element (10;30) further including a bottom tunnel barrier layer (14;34), a free ferromagnetic layer (16;46 and 48) and a top tunnel barrier layer (18;38) formed between the bottom pinned ferromagnetic layer (12;32) and the top pinned ferromagnetic layer (20;40). The structure is defined as including two (2) tunnel barrier layers in which one tunnel barrier layer is normal (18) and one is reversed (14), or a structure in which the two tunnel barrier layers are of the same type (34; 38) with the structure further includes a SAF structure (36) to allow for consistently changing magnetoresistance ratios across both tunnel barriers. The magnetic element (10;30) having an improved magnetoresistance ratio and a decrease in voltage dependence.

摘要翻译： 一种改进和新颖的磁性元件和制造方法。 磁性元件（10; 30）包括彼此反平行制造的底部钉扎铁磁层（12; 32）和顶部固定的铁磁性层（20; 40）。 磁性元件（10; 30）还包括底部隧道阻挡层（14; 34），自由铁磁层（16; 46和48）和顶部隧道势垒层（18; 38） （12; 32）和顶部固定铁磁层（20; 40）。 该结构被定义为包括两个（2）隧道势垒层，其中一个隧道势垒层是正常的（18）和一个反向（14），或者其中两个隧道势垒层是相同类型的结构（34; 38），其结构还包括SAF结构（36），以允许贯穿两个隧道屏障始终改变磁阻比。 磁性元件（10; 30）具有改善的磁阻比和电压依赖性的降低。

公开(公告)号：US06376260B1

公开(公告)日：2002-04-23

申请号：US09825705

申请日：2001-04-05

申请人： Eugene Youjun Chen ,  Jon Michael Slaughter ,  Jing Shi

发明人： Eugene Youjun Chen ,  Jon Michael Slaughter ,  Jing Shi

IPC分类号： H01L2100

CPC分类号： H01F41/307 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3268 ,  H01F10/3272 ,  H01L43/08

摘要： An improved and novel fabrication method for a magnetic element, and more particularly a magnetic element (10) including a first electrode (14) , a second electrode (18) and a spacer layer (16). The first electrode (14) includes a fixed ferromagnetic layer (26) having a thickness t1. A second electrode (18) is included and comprises a free ferromagnetic layer (28) having a thickness t2. A spacer layer (16) is located between the fixed ferromagnetic layer (26) and the free ferromagnetic (28) layer, the spacer layer (16) having a thickness t3, where 0.25t3

摘要翻译： 一种用于磁性元件的改进和新颖的制造方法，更具体地，包括第一电极（14），第二电极（18）和间隔层（16）的磁性元件（10）。 第一电极（14）包括具有厚度t1的固定铁磁层（26）。 包括第二电极（18）并且包括具有厚度t2的自由铁磁层（28）。 间隔层（16）位于固定铁磁层（26）和自由铁磁层（28）之间，隔离层（16）的厚度为t3，其中0.25t3

公开(公告)号：US06292389B1

公开(公告)日：2001-09-18

申请号：US09356864

申请日：1999-07-19

申请人： Eugene Youjun Chen ,  Jon Michael Slaughter ,  Jing Shi

发明人： Eugene Youjun Chen ,  Jon Michael Slaughter ,  Jing Shi

IPC分类号： H01L2976

CPC分类号： H01F41/307 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3268 ,  H01F10/3272 ,  H01L43/08

摘要： An improved and novel fabrication method for a magnetic element, and more particularly a magnetic element (10) including a first electrode (14), a second electrode (18) and a spacer layer (16). The first electrode (14) includes a fixed ferromagnetic layer (26) having a thickness t1. A second electrode (18) is included and comprises a free ferromagnetic layer (28) having a thickness t2. A spacer layer (16) is located between the fixed ferromagnetic layer (26) and the free ferromagnetic (28) layer, the spacer layer (16) having a thickness t3, where 0.25t3

摘要翻译： 一种用于磁性元件的改进和新颖的制造方法，更具体地，包括第一电极（14），第二电极（18）和间隔层（16）的磁性元件（10）。 第一电极（14）包括具有厚度t1的固定铁磁层（26）。 包括第二电极（18）并且包括具有厚度t2的自由铁磁层（28）。 间隔层（16）位于固定铁磁层（26）和自由铁磁层（28）之间，隔离层（16）的厚度为t3，其中0.25t3