公开(公告)号：US20200028092A1

公开(公告)日：2020-01-23

申请号：US16588574

申请日：2019-09-30

Applicant: FUJIFILM Corporation ,  THE UNIVERSITY OF TOKYO

Inventor： Kenji SHIROKANE ,  Eiji FUKUZAKI ,  Yukio TANI ,  Fumiko TAMAKUNI ,  Yoshihisa USAMI ,  Tetsuya WATANABE ,  Toshihiro OKAMOTO ,  Junichi TAKEYA

IPC: H01L51/00 ,  C07D495/22 ,  C07D495/16 ,  C07D517/22 ,  C08G61/12

Abstract: An organic semiconductor element in which an organic semiconductor layer contains a compound of Formula (1), a compound of Formula (2), and/or a compound of Formula (3) or contains a polymer having a structure of any one of formed by Formulae (8) to (10): in which X1 represents a nitrogen atom or CRa, and rings A to B each represent a specific nitrogen-containing ring; Y1 represents an oxygen atom, a sulfur atom, CRb2, or NRc; V1 represents NRd, an oxygen atom, a sulfur atom, or a selenium atom; Ra to Rd each represent a hydrogen atom or a substituent; R1 represents a specific substituent, and p is an integer of 0 to 2; n represents 1 or 2; and * represents a bonding site.

公开(公告)号：US20190027691A1

公开(公告)日：2019-01-24

申请号：US16141429

申请日：2018-09-25

Applicant: FUJIFILM Corporation

Inventor： Fumiko TAMAKUNI ,  Yosuke YAMAMOTO ,  Tetsuya WATANABE

IPC: H01L51/00 ,  C08G61/12

Abstract: Provided are an organic semiconductor element including an organic semiconductor film that includes a polymer having a repeating unit represented by the following Formula (1), the polymer, and an organic semiconductor composition and an organic semiconductor film including the polymer. In the formula, Z represent a 5-membered aromatic heterocycle. RC1 and RC2 each independently represent a halogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aromatic hydrocarbon group, or an aromatic heterocyclic group. n1 and n2 each independently represent 0 or 1. RC3 to RC10 each independently represent a hydrogen atom, a halogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aromatic hydrocarbon group, or an aromatic heterocyclic group.

公开(公告)号：US20180226589A1

公开(公告)日：2018-08-09

申请号：US15943968

申请日：2018-04-03

Applicant: FUJIFILM Corporation ,  The University of Tokyo

Inventor： Hiroaki TSUYAMA ,  Kimiatsu NOMURA ,  Yoshihisa USAMI ,  Masatoshi YUMOTO ,  Tetsu KITAMURA ,  Masashi KOYANAGI ,  Tetsuya WATANABE ,  Toshihiro OKAMOTO ,  Junichi TAKEYA

IPC: H01L51/00 ,  C09D5/24 ,  C07D495/14 ,  C09B57/00 ,  H01L51/05

CPC classification number: H01L51/0074 ,  C07D495/14 ,  C09B57/00 ,  C09D5/24 ,  H01L51/0007 ,  H01L51/0558 ,  Y02E10/549 ,  Y02P70/521

Abstract: Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.)

公开(公告)号：US20180175299A1

公开(公告)日：2018-06-21

申请号：US15897720

申请日：2018-02-15

Applicant: FUJIFILM Corporation

Inventor： Yosuke YAMAMOTO ,  Hiroo TAKIZAWA ,  Yuta SHIGENOI ,  Fumiko TAMAKUNI ,  Takashi GOTO ,  Tetsuya WATANABE

IPC: H01L51/00 ,  C08G61/12

CPC classification number: H01L51/0036 ,  C08G61/126 ,  C08G2261/124 ,  C08G2261/1412 ,  C08G2261/1424 ,  C08G2261/148 ,  C08G2261/18 ,  C08G2261/228 ,  C08G2261/314 ,  C08G2261/3223 ,  C08G2261/3225 ,  C08G2261/3241 ,  C08G2261/3243 ,  C08G2261/3246 ,  C08G2261/92 ,  H01L29/786 ,  H01L51/0003 ,  H01L51/0043 ,  H01L51/052 ,  H01L51/0545 ,  H01L51/0558

Abstract: An object of the present invention is to provide an organic thin film transistor exhibiting high carrier mobility and a low threshold voltage and having excellent heat resistance, a method of manufacturing an organic thin film transistor, an organic semiconductor composition, an organic semiconductor film, and a method of manufacturing an organic semiconductor film. The organic thin film transistor according to the present invention includes, on a substrate, a gate electrode; an organic semiconductor layer containing an organic semiconductor compound; a gate insulating layer provided between the gate electrode and the organic semiconductor layer; and a source electrode and a drain electrode which are provided to be in contact with the organic semiconductor layer and are linked to each other via the organic semiconductor layer, in which the organic semiconductor layer is in contact with a layer containing a resin (C) or further contains the resin (C), and in which the organic semiconductor compound has a molecular weight of 2,000 or greater and has a repeating unit represented by Formula (1). D-A  (1)

公开(公告)号：US20150380042A1

公开(公告)日：2015-12-31

申请号：US14845492

申请日：2015-09-04

Applicant: FUJIFILM CORPORATION

Inventor： Hidehiro MOCHIZUKI ,  Tetsuya WATANABE ,  Toshio SASAKI ,  Tatsuo MIKAMI ,  Takumi NAKAMURA

IPC: G11B7/246 ,  C08F220/18 ,  C08F226/06

CPC classification number: G11B7/246 ,  C08F220/18 ,  C08F226/06 ,  C09D4/00 ,  G11B7/24038 ,  G11B7/2405 ,  G11B7/245 ,  G11B7/256 ,  C08F2220/185 ,  C08F220/34

Abstract: An optical information recording medium includes at least one recording layer. The recording layer includes a recording material comprising a polymer compound to which a one-photon absorption dye is bonded, and a coupling strength Δ2 between the one-photon absorption dye and the polymer compound in the recording material is higher than a coupling strength estimated to be exerted between the same one-photon absorption dye and the same polymer compound if the one-photon absorption dye is dispersed in the polymer compound in the recording material.

Abstract translation: 光学信息记录介质包括至少一个记录层。 记录层包括记录材料，该记录材料包含与单光子吸收染料结合的高分子化合物，记录材料中单光子吸收染料和高分子化合物之间的耦合强度＆Dgr; 2高于耦合强度 如果单光子吸收染料分散在记录材料中的高分子化合物中，则估计它们在相同的单光子吸收染料和相同的聚合物化合物之间施加。