Over-voltage protection of gallium nitride semiconductor devices
    33.
    发明授权
    Over-voltage protection of gallium nitride semiconductor devices 有权
    氮化镓半导体器件的过电压保护

    公开(公告)号:US09111750B2

    公开(公告)日:2015-08-18

    申请号:US13931363

    申请日:2013-06-28

    Abstract: A monolithically integrated semiconductor assembly is presented. The semiconductor assembly includes a substrate including silicon carbide (SiC), and gallium nitride (GaN) semiconductor device is fabricated on the substrate. The semiconductor assembly further includes at least one transient voltage suppressor (TVS) structure fabricated in or on the substrate, wherein the TVS structure is in electrical contact with the GaN semiconductor device. The TVS structure is configured to operate in a punch-through mode, an avalanche mode, or combinations thereof, when an applied voltage across the GaN semiconductor device is greater than a threshold voltage. Methods of making a monolithically integrated semiconductor assembly are also presented.

    Abstract translation: 提出了一种单片集成半导体组件。 半导体组件包括包含碳化硅(SiC)的衬底,并且在衬底上制造氮化镓(GaN)半导体器件。 半导体组件还包括在衬底中或衬底上制造的至少一个瞬态电压抑制器(TVS)结构,其中TVS结构与GaN半导体器件电接触。 当跨越GaN半导体器件的施加电压大于阈值电压时,TVS结构被配置为以穿通模式,雪崩模式或其组合工作。 还提出了制造单片集成半导体组件的方法。

    HIGH VOLTAGE DC POWER CONVERSION SYSTEM AND METHOD OF OPERATING THE SAME
    34.
    发明申请
    HIGH VOLTAGE DC POWER CONVERSION SYSTEM AND METHOD OF OPERATING THE SAME 有权
    高压直流电力转换系统及其运行方法

    公开(公告)号:US20150078046A1

    公开(公告)日:2015-03-19

    申请号:US14026737

    申请日:2013-09-13

    Abstract: A fraction rated conversion system for coupling a plurality of high voltage direct current (HVDC) power strings in parallel to an HVDC transmission system includes at least one fraction rated power converter coupled to the plurality of HVDC power strings and at least one capacitive device coupled to the at least one fraction rated power converter. The at least one fraction rated power converter and the at least one capacitive device regulate a differential voltage across each HVDC power string of the plurality of HVDC power strings to be substantially similar to each other.

    Abstract translation: 用于将多个高压直流(HVDC)功率串并联连接到HVDC传输系统的分数额定转换系统包括耦合到多个HVDC功率串的至少一个分数额定功率转换器和耦合到 至少一个分数额定功率转换器。 所述至少一个分数额定功率转换器和所述至少一个电容性装置调节所述多个HVDC功率串中的每个HVDC功率串的差分电压基本上彼此相似。

    SEMICONDUCTOR ASSEMBLY AND METHOD OF MANUFACTURE
    35.
    发明申请
    SEMICONDUCTOR ASSEMBLY AND METHOD OF MANUFACTURE 有权
    半导体装配及其制造方法

    公开(公告)号:US20150028469A1

    公开(公告)日:2015-01-29

    申请号:US13950736

    申请日:2013-07-25

    CPC classification number: H01L27/0248 H01L2924/0002

    Abstract: A monolithically integrated semiconductor assembly is presented. The semiconductor assembly includes a substrate including silicon (Si), and gallium nitride (GaN) semiconductor device is fabricated on the substrate. The semiconductor assembly further includes at least one transient voltage suppressor (TVS) structure fabricated in or on the substrate, wherein the TVS structure is in electrical contact with the GaN semiconductor device. The TVS structure is configured to operate in a punch-through mode, an avalanche mode, or combinations thereof, when an applied voltage across the GaN semiconductor device is greater than a threshold voltage. Methods of making a monolithically integrated semiconductor assembly are also presented.

    Abstract translation: 提出了一种单片集成半导体组件。 半导体组件包括包括硅(Si)的衬底,并且在衬底上制造氮化镓(GaN)半导体器件。 半导体组件还包括在衬底中或衬底上制造的至少一个瞬态电压抑制器(TVS)结构,其中TVS结构与GaN半导体器件电接触。 当跨越GaN半导体器件的施加电压大于阈值电压时,TVS结构被配置为以穿通模式,雪崩模式或其组合工作。 还提出了制造单片集成半导体组件的方法。

    SYSTEM AND METHOD FOR POWER CONVERSION
    36.
    发明申请
    SYSTEM AND METHOD FOR POWER CONVERSION 有权
    用于功率转换的系统和方法

    公开(公告)号:US20140146585A1

    公开(公告)日:2014-05-29

    申请号:US13688315

    申请日:2012-11-29

    CPC classification number: H02M7/538 H02J3/383 H02M7/48 H02M7/5387 Y02E10/563

    Abstract: A power converter is provided. The power converter includes a converter leg including switches for converting power. The power converter also includes a controller for switching the switches using a pulse width modulation technique. The power converter further includes an interface inductor coupled to the converter leg for avoiding a reverse recovery of current in the switches during operation.

    Abstract translation: 提供电源转换器。 功率转换器包括转换器支脚,其包括用于转换功率的开关。 功率转换器还包括用于使用脉冲宽度调制技术来切换开关的控制器。 功率转换器还包括耦合到转换器支脚的接口电感器,用于避免在操作期间开关中电流的反向恢复。

    POWER CONVERTER FOR FULL CONVERSION WIND TURBINE SYSTEMS

    公开(公告)号:US20200158085A1

    公开(公告)日:2020-05-21

    申请号:US16752626

    申请日:2020-01-25

    Abstract: Power converters for use in wind turbine systems are included. For instance, a wind turbine system can include a full power generator having a stator and a rotor. The generator is configured to provide a low voltage alternating current power on a stator bus of the wind turbine system. The wind turbine system includes a power converter configured to convert the low voltage alternating current power provided on the stator bus to a medium voltage multiphase alternating current output power suitable for provision to the electrical grid. The power converter includes a plurality of conversion modules, each conversion module comprising a plurality of bridge circuits. Each bridge circuit includes a plurality of silicon carbide switching devices coupled in series. Each conversion module is configured to provide a single phase of the medium voltage multiphase alternating current output power on a line bus of the wind turbine system.

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