公开(公告)号：US09472643B2

公开(公告)日：2016-10-18

申请号：US14595756

申请日：2015-01-13

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GLOBALFOUNDRIES Inc.

Inventor： Takashi Ando ,  Eduard A. Cartier ,  Kisik Choi ,  Vijay Narayanan

IPC: H01L21/3205 ,  H01L29/66 ,  H01L21/28 ,  H01L21/324 ,  H01L29/423 ,  H01L21/321

CPC classification number: H01L29/66545 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/28017 ,  H01L21/28088 ,  H01L21/32055 ,  H01L21/321 ,  H01L21/324 ,  H01L29/4232 ,  H01L29/66 ,  H01L29/66795 ,  H01L29/6681

Abstract: A method of fabricating a replacement gate stack for a semiconductor device includes the following steps after removal of a dummy gate: growing a high-k dielectric layer over the area vacated by the dummy gate; depositing a thin metal layer over the high-k dielectric layer; depositing a sacrificial layer over the thin metal layer; performing a first rapid thermal anneal; removing the sacrificial layer; and depositing a metal layer of low resistivity metal for gap fill.

公开(公告)号：US09449887B2

公开(公告)日：2016-09-20

申请号：US14563009

申请日：2014-12-08

Applicant: GLOBALFOUNDRIES INC.

Inventor： Takashi Ando ,  Balaji Kannan ,  Vijay Narayanan

IPC: H01L21/8238 ,  H01L29/49 ,  H01L21/28 ,  H01L29/66

CPC classification number: H01L21/823828 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/66606 ,  H01L29/66871

Abstract: A method of forming a transistor device includes forming an interfacial layer and a dielectric layer over a substrate; and forming a workfunction metal layer over the dielectric layer, the workfunction metal layer comprising a titanium-aluminum-carbon-oxygen (TiAlCO) layer.

Abstract translation: 形成晶体管器件的方法包括在衬底上形成界面层和电介质层; 以及在所述电介质层上形成功函数金属层，所述功函数金属层包含钛 - 铝 - 碳 - 氧（TiAlCO）层。

公开(公告)号：US20150236135A1

公开(公告)日：2015-08-20

申请号：US14699427

申请日：2015-04-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GLOBALFOUNDRIES Inc.

Inventor： Takashi Ando ,  Eduard A. Cartier ,  Kisik Choi ,  Vijay Narayanan

IPC: H01L29/66 ,  H01L21/28 ,  H01L21/02 ,  H01L21/324

CPC classification number: H01L29/66545 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/28017 ,  H01L21/28088 ,  H01L21/32055 ,  H01L21/321 ,  H01L21/324 ,  H01L29/4232 ,  H01L29/66 ,  H01L29/66795 ,  H01L29/6681

Abstract: A method of fabricating a replacement gate stack for a semiconductor device includes the following steps after removal of a dummy gate: growing a high-k dielectric layer over the area vacated by the dummy gate; depositing a thin metal layer over the high-k dielectric layer; depositing a sacrificial layer over the thin metal layer; performing a first rapid thermal anneal; removing the sacrificial layer; and depositing a metal layer of low resistivity metal for gap fill.