公开(公告)号：US10996398B1

公开(公告)日：2021-05-04

申请号：US16703356

申请日：2019-12-04

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Ajey Poovannummoottil Jacob

IPC: G02B6/27 ,  G02B6/12 ,  G02B27/28 ,  G02F1/313

Abstract: Structures for a polarization splitter and methods of fabricating a structure for a polarization splitter. First and second waveguide cores of the polarization splitter are located adjacent to each other in a coupling region. A third waveguide core is located over the second waveguide core in the coupling region. The third waveguide core is composed of a material having a variable refractive index.

公开(公告)号：US20210124117A1

公开(公告)日：2021-04-29

申请号：US16663696

申请日：2019-10-25

Applicant: GLOBALFOUNDRIES U.S. Inc. ,  KHALIFA UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Ajey Poovannummoottil Jacob ,  Yusheng Bian ,  Sujith Chandran ,  Marcus Dahlem

IPC: G02B6/125 ,  G02B6/122 ,  G02B6/12

Abstract: Structures for a waveguide crossing and methods of fabricating a structure for a waveguide crossing. A waveguide crossing includes a central section and an arm positioned between a waveguide core and the central section. The arm and the waveguide core are aligned along a longitudinal axis. The arm is coupled to the waveguide core at a first interface, and the arm is coupled to a portion of the central section at a second interface. The arm has a first width at the first interface, a second width at the second interface, and a third width between the first interface and the second interface. The third width is greater than either the first width or the second width.

公开(公告)号：US20210109384A1

公开(公告)日：2021-04-15

申请号：US16868631

申请日：2020-05-07

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Ajey Poovannummoottil Jacob

IPC: G02F1/025 ,  G02F1/035

Abstract: Structures for an electro-optic modulator and methods of fabricating a structure for an electro-optic modulator. The electro-optic modulator has a layer stack arranged over a section of a waveguide core. The layer stack includes a first layer, a second layer, and a third layer. The first layer, the second layer, and the third layer are each composed of either copper or indium-tin oxide.

公开(公告)号：US11810989B2

公开(公告)日：2023-11-07

申请号：US17504614

申请日：2021-10-19

Applicant: GlobalFoundries U.S. Inc.

Inventor： Ajey Poovannummoottil Jacob ,  Yusheng Bian ,  Steven Shank

IPC: H01L31/0352 ,  H01L31/0232 ,  H01L31/18 ,  H01L31/028 ,  H01L31/103

CPC classification number: H01L31/035281 ,  H01L31/028 ,  H01L31/02327 ,  H01L31/103 ,  H01L31/1804 ,  H01L31/1872

Abstract: A photodetector disclosed herein includes an N-doped waveguide structure defined in a semiconductor material, wherein the N-doped waveguide structure comprises a plurality of first fins. Each adjacent pair of the plurality of first fins is separated by a trench formed in the semiconductor material. The photodetector also includes a detector structure positioned on the N-doped waveguide structure, wherein a portion of the detector structure is positioned laterally between the plurality of first fins. The detector structure comprises a single crystal semiconductor material. The photodetector also includes a first diffusion region that extends from the bottom surface of the trench into the semiconductor material, wherein the first diffusion region comprises atoms of the single crystal semiconductor material of the detector structure.

公开(公告)号：US11467343B2

公开(公告)日：2022-10-11

申请号：US17170959

申请日：2021-02-09

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Bo Peng ,  Ajey Poovannummoottil Jacob ,  Yusheng Bian

IPC: G02B6/26

Abstract: Optical coupler structures include a waveguide having waveguide metamaterial segments aligned along a first line. A second insulator is on the first insulator and the waveguide metamaterial segments. A coupler structure is in the second insulator and has coupler metamaterial segments aligned along a second line. The first line and the second line are parallel and within a plane. A portion of the waveguide overlaps a portion of the coupler structure. The waveguide metamaterial segments intersect the plane and have first widths perpendicular to the plane, and the first widths have a first taper along the first line. The coupler metamaterial segments intersect the plane and have second widths in the direction perpendicular to the plane. The second widths have a second taper along the second line that is different from the first taper of the first widths where the waveguide overlaps the coupler structure.

公开(公告)号：US11309447B2

公开(公告)日：2022-04-19

申请号：US16727321

申请日：2019-12-26

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Ajey Poovannummoottil Jacob ,  Yusheng Bian

IPC: H01L31/107 ,  H01L31/18 ,  H01L31/028 ,  H01L31/0352

Abstract: One illustrative photodiode disclosed herein includes an N-doped anode region, a P-doped cathode region and at least one P-doped charge region positioned laterally between the N-doped anode region and the P-doped cathode region. In this example, the photodiode also includes a plurality of quantum dots embedded within the at least one P-doped charge region and an N-doped impact ionization region positioned laterally between the N-doped anode region and the at least one P-doped charge region.

公开(公告)号：US11256030B1

公开(公告)日：2022-02-22

申请号：US17063103

申请日：2020-10-05

Applicant: GLOBALFOUNDRIES U.S. Inc. ,  KHALIFA UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Sujith Chandran ,  Yusheng Bian ,  Jaime Viegas ,  Ajey Poovannummoottil Jacob

IPC: G02B6/122 ,  G02B6/12

Abstract: Structures for an optical power splitter and methods of forming a structure for an optical power splitter. A first waveguide core provides an input port, and second and third waveguide cores provide respective output ports. A non-linear waveguide taper is coupled to the first waveguide core at a first interface and is coupled to the second and third waveguide cores at a second interface. The non-linear waveguide taper includes a first curved section having a first width dimension that increases with increasing longitudinal distance from the first interface. The non-linear waveguide taper includes a second curved section having a second width dimension that increases with increasing longitudinal distance from the second interface. The first and second curved sections join at a longitudinal location at which the first and second width dimensions are each equal to a maximum width of the non-linear waveguide taper.

公开(公告)号：US20220037545A1

公开(公告)日：2022-02-03

申请号：US17504614

申请日：2021-10-19

Applicant: GlobalFoundries U.S. Inc.

Inventor： Ajey Poovannummoottil Jacob ,  Yusheng Bian ,  Steven Shank

IPC: H01L31/0352 ,  H01L31/0232 ,  H01L31/18 ,  H01L31/028 ,  H01L31/103

Abstract: A photodetector disclosed herein includes an N-doped waveguide structure defined in a semiconductor material, wherein the N-doped waveguide structure comprises a plurality of first fins. Each adjacent pair of the plurality of first fins is separated by a trench formed in the semiconductor material. The photodetector also includes a detector structure positioned on the N-doped waveguide structure, wherein a portion of the detector structure is positioned laterally between the plurality of first fins. The detector structure comprises a single crystal semiconductor material. The photodetector also includes a first diffusion region that extends from the bottom surface of the trench into the semiconductor material, wherein the first diffusion region comprises atoms of the single crystal semiconductor material of the detector structure.

公开(公告)号：US11227960B2

公开(公告)日：2022-01-18

申请号：US16819686

申请日：2020-03-16

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Ajey Poovannummoottil Jacob

IPC: H01L31/0232 ,  H01L27/144 ,  H01L31/0224

Abstract: One illustrative optical device disclosed herein includes a base layer comprising a semiconductor material and a photodetector-coupler that comprises a detector-coupler element. The device also includes a first diode structure that is positioned in the detector-coupler element and a second diode structure that is positioned in the base layer, wherein the second diode structure is positioned vertically below at least a portion of detector-coupler element.

公开(公告)号：US11195580B2

公开(公告)日：2021-12-07

申请号：US16801458

申请日：2020-02-26

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Akhilesh Jaiswal ,  Ajey Poovannummoottil Jacob

IPC: G11C11/00 ,  G11C13/00 ,  G11C11/16 ,  G06F7/544

Abstract: Disclosed is a cell that integrates a pixel and a two-terminal non-volatile memory device. The cell can be selectively operated in write, read and functional computing modes. In the write mode, a first data value is stored the memory device. In the read mode, it is read from the memory device. In the functional computing mode, the pixel captures a second data value and a sensed change in an electrical parameter (e.g., voltage or current) on a bitline connected to the cell is a function of both the first and second data value. Also disclosed is an IC structure that includes an array of the cells and, when multiple cells in a given column are concurrently operated in the functional computing mode, the sensed total change in the electrical parameter on the bitline for the column is indicative of a result of a dot product computation.