公开(公告)号：US08072810B2

公开(公告)日：2011-12-06

申请号：US12985743

申请日：2011-01-06

申请人： Tzu-Hsuan Hsu ,  Chao-I Wu ,  Kuang-Yeu Hsieh ,  Ya-Chin King

发明人： Tzu-Hsuan Hsu ,  Chao-I Wu ,  Kuang-Yeu Hsieh ,  Ya-Chin King

IPC分类号： G11C11/34

CPC分类号： G11C16/0466

摘要： The present invention describes a uniform program method and a uniform erase method of a charge trapping memory by employing a substrate transient hot electron technique for programming, and a substrate transient hot hole technique for erasing, which emulate an FN tunneling method for NAND memory operation. The methods of the present invention are applicable to a wide variety of charge trapping memories including n-channel or p-channel SONOS types of memories and floating gate (FG) type memories. the programming of the charge trapping memory is conducted using a substrate transient hot electron injection in which a body bias voltage Vb has a short pulse width and a gate bias voltage Vg has a pulse width that is sufficient to move electrons from a channel region to a charge trapping structure.

摘要翻译： 本发明通过采用用于编程的衬底瞬态热电子技术和用于擦除的衬底瞬时热孔技术来描述电荷俘获存储器的均匀编程方法和均匀擦除方法，其模拟用于NAND存储器操作的FN隧道法。 本发明的方法可应用于包括n沟道或p沟道SONOS类型的存储器和浮动栅（FG）型存储器的各种电荷捕获存储器。 使用衬底瞬态热电子注入进行电荷俘获存储器的编程，其中体偏置电压Vb具有短的脉冲宽度，并且栅极偏置电压Vg具有足以将电子从沟道区域移动到 电荷捕获结构。

公开(公告)号：US20110294250A1

公开(公告)日：2011-12-01

申请号：US13206228

申请日：2011-08-09

申请人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

发明人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

IPC分类号： H01L31/18

CPC分类号： H01L27/14625 ,  H01L27/14603 ,  H01L27/1464

摘要： Provided is a method of forming and/or using a backside-illuminated sensor including a semiconductor substrate having a front surface and a back surface. A transfer transistor and a photodetector are formed on the front surface. The gate of the transfer transistor includes an optically reflective layer. The gate of the transfer transistor, including the optically reflective layer, overlies the photodetector. Radiation incident the back surface and tratversing the photodetector may be reflected by the optically reflective layer. The reflected radiation may be sensed by the photodetector.

摘要翻译： 提供一种形成和/或使用背面照明传感器的方法，该传感器包括具有前表面和后表面的半导体衬底。 传输晶体管和光电检测器形成在前表面上。 转移晶体管的栅极包括光反射层。 包括光反射层的传输晶体管的栅极覆盖在光电检测器上。 入射到背面的光线和扫描光电检测器的辐射可以被光反射层反射。 可以由光电检测器感测反射的辐射。

公开(公告)号：US20110031542A1

公开(公告)日：2011-02-10

申请号：US12904903

申请日：2010-10-14

申请人： Tzu-Hsuan Hsu ,  Alex Hsu ,  Ching-Chun Wang

发明人： Tzu-Hsuan Hsu ,  Alex Hsu ,  Ching-Chun Wang

IPC分类号： H01L31/14 ,  H01L29/66

CPC分类号： H01L27/14689 ,  H01L21/26513 ,  H01L27/1463

摘要： Provided is a method for fabricating an image sensor device that includes providing a substrate having a front side and a back side; patterning a photoresist on the front side of the substrate to define an opening having a first width, the photoresist having a first thickness correlated to the first width; performing an implantation process through the opening using an implantation energy correlated to the first thickness thereby forming a first doped isolation feature; forming a light sensing feature adjacent to the first doped isolation feature, the light sensing feature having a second width; and thinning the substrate from the back side so that the substrate has a second thickness that does not exceed twice a depth of the first doped isolation feature. A pixel size is substantially equal to the first and second widths.

摘要翻译： 提供一种制造图像传感器装置的方法，该图像传感器装置包括提供具有正面和背面的基板; 在衬底的前侧上形成光致抗蚀剂以限定具有第一宽度的开口，光致抗蚀剂具有与第一宽度相关的第一厚度; 通过使用与第一厚度相关的注入能量通过开口执行注入工艺，从而形成第一掺杂隔离特征; 形成与所述第一掺杂隔离特征相邻的光感测特征，所述光感测特征具有第二宽度; 以及从背面使衬底变薄，使得衬底具有不超过第一掺杂隔离特征深度的两倍的第二厚度。 像素尺寸基本上等于第一和第二宽度。

公开(公告)号：US07881112B2

公开(公告)日：2011-02-01

申请号：US12538582

申请日：2009-08-10

申请人： Tzu-Hsuan Hsu ,  Chao-I Wu ,  Kuang-Yeu Hsieh ,  Ya-Chin King

发明人： Tzu-Hsuan Hsu ,  Chao-I Wu ,  Kuang-Yeu Hsieh ,  Ya-Chin King

IPC分类号： G11C11/34

CPC分类号： G11C16/0466

摘要： The present invention describes a uniform program method and a uniform erase method of a charge trapping memory by employing a substrate transient hot electron technique for programming, and a substrate transient hot hole technique for erasing, which emulate an FN tunneling method for NAND memory operation. The methods of the present invention are applicable to a wide variety of charge trapping memories including n-channel or p-channel SONOS types of memories and floating gate (FG) type memories. the programming of the charge trapping memory is conducted using a substrate transient hot electron injection in which a body bias voltage Vb has a short pulse width and a gate bias voltage Vg has a pulse width that is sufficient to move electrons from a channel region to a charge trapping structure.

公开(公告)号：US07863067B2

公开(公告)日：2011-01-04

申请号：US11686108

申请日：2007-03-14

申请人： Gwo-Yuh Shiau ,  Ming Chyi Liu ,  Tzu-Hsuan Hsu ,  Chia-Shiung Tsai

发明人： Gwo-Yuh Shiau ,  Ming Chyi Liu ,  Tzu-Hsuan Hsu ,  Chia-Shiung Tsai

IPC分类号： H01L21/00

CPC分类号： H01L21/268 ,  H01L27/1464 ,  H01L27/14683

摘要： The present disclosure provides a method for fabricating a semiconductor device including providing a semiconductor substrate comprising a first surface and a second surface, wherein at least one imaging sensor is located adjacent the first surface, activating a dopant layer in the semiconductor substrate adjacent the second surface using a localized annealing process, and etching the dopant layer.

摘要翻译： 本公开提供一种制造半导体器件的方法，包括提供包括第一表面和第二表面的半导体衬底，其中至少一个成像传感器位于第一表面附近，激活邻近第二表面的半导体衬底中的掺杂剂层 使用局部退火工艺，并蚀刻掺杂剂层。

公开(公告)号：US20100181635A1

公开(公告)日：2010-07-22

申请号：US12405454

申请日：2009-03-17

申请人： Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Chun-Ming Su

发明人： Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Chun-Ming Su

IPC分类号： H01L31/04 ,  H01L31/18

CPC分类号： H01L27/14689 ,  H01L27/1463 ,  H01L27/14643

摘要： Provided is a method of fabricating an image sensor device. The method includes providing a semiconductor substrate having a front side and a back side, forming a first isolation structure at the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side, and forming a second isolation structure at the back side of the semiconductor substrate. The first and second isolation structures are shifted with respect to each other.

摘要翻译： 提供了一种制造图像传感器装置的方法。 该方法包括提供具有前侧和后侧的半导体衬底，在半导体衬底的前侧形成第一隔离结构，从背面减薄半导体衬底，并在第二隔离结构的背面形成第二隔离结构 半导体衬底。 第一和第二隔离结构相对于彼此移位。

公开(公告)号：US20100009504A1

公开(公告)日：2010-01-14

申请号：US12561395

申请日：2009-09-17

申请人： Tzu-Hsuan Hsu ,  Ming-Hsiu Lee ,  Chao-I Wu ,  Ming-Chang Kuo

发明人： Tzu-Hsuan Hsu ,  Ming-Hsiu Lee ,  Chao-I Wu ,  Ming-Chang Kuo

IPC分类号： H01L21/336

CPC分类号： H01L27/115 ,  G11C16/0475 ,  H01L27/11568 ,  H01L29/66833 ,  H01L29/792 ,  H01L29/7926

摘要： A memory array comprising vertical memory cells does not require any isolation layers between cells. Thus, a very compact, high density memory array can be achieved. Each memory cell in the memory array is configured to store 4 bits of data per cell. Multi-level charge techniques can be used to increase the number of bit per cell and achieve further increased density for the memory array.

摘要翻译： 包括垂直存储单元的存储器阵列不需要单元之间的任何隔离层。 因此，可以实现非常紧凑，高密度的存储器阵列。 存储器阵列中的每个存储单元被配置为存储每个单元的4位数据。 可以使用多电平充电技术来增加每个单元的位数，并实现对存储器阵列的进一步增加的密度。

公开(公告)号：US07387907B2

公开(公告)日：2008-06-17

申请号：US11517296

申请日：2006-09-08

申请人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Yean-Kuen Fang

发明人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Yean-Kuen Fang

IPC分类号： H01L21/00

CPC分类号： H01L27/1462 ,  H01L25/167 ,  H01L27/14625 ,  H01L27/1463 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/15 ,  H01L2924/0002 ,  H01L2924/00

摘要： An image sensor device and fabrication method thereof wherein a substrate having at least one shallow trench isolation structure therein is provided. At least one photosensor and at least one light emitting element, e.g., such as MOS or LED, are formed in the substrate. The photosensor and the light emitting element are isolated by the shallow trench isolation structure. An opening is formed in the shallow trench isolation structure to expose part of the substrate. An opaque shield is formed in the opening to prevent photons from the light emitting element from striking the photosensor.

摘要翻译： 一种图像传感器装置及其制造方法，其中提供其中具有至少一个浅沟槽隔离结构的基板。 在衬底中形成至少一个光电传感器和至少一个发光元件，例如MOS或LED。 光传感器和发光元件通过浅沟槽隔离结构隔离。 在浅沟槽隔离结构中形成开口以暴露部分衬底。 在开口中形成不透明屏蔽物，以防止来自发光元件的光子撞击光传感器。

公开(公告)号：US20070262354A1

公开(公告)日：2007-11-15

申请号：US11624568

申请日：2007-01-18

申请人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung

发明人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung

IPC分类号： H01L31/113 ,  H01L31/18

CPC分类号： H01L27/14645 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/1464

摘要： A backside illuminated sensor includes a semiconductor substrate having a front surface and a back surface and a plurality of pixels formed on the front surface of the semiconductor substrate. A dielectric layer is disposed above the front surface of the semiconductor substrate. The sensor further includes a plurality of array regions arranged according to the plurality of pixels. At least two of the array regions have a different radiation response characteristic from each other, such as the first array region having a greater junction depth than the second array region, or the first array region having a greater dopant concentration than the second array region.

摘要翻译： 背面照明传感器包括具有前表面和后表面的半导体衬底以及形成在半导体衬底的前表面上的多个像素。 电介质层设置在半导体衬底的前表面之上。 传感器还包括根据多个像素布置的多个阵列区域。 阵列区域中的至少两个具有彼此不同的辐射响应特性，例如具有比第二阵列区域更大的结深度的第一阵列区域，或者具有比第二阵列区域更大的掺杂剂浓度的第一阵列区域。

公开(公告)号：US20070253258A1

公开(公告)日：2007-11-01

申请号：US11773857

申请日：2007-07-05

申请人： Tzu-Hsuan Hsu ,  Yen-Hao Shih

发明人： Tzu-Hsuan Hsu ,  Yen-Hao Shih

IPC分类号： G11C11/34

CPC分类号： G11C16/0475

摘要： A method for operating a nitride trapping memory cell is provided to resolve hard-to-erase condition by employing a reset technique to eliminate or reduce the number of electrons in the middle of a junction region. When a hard-to-erase condition is detected after a series of program and erase cycles, such as 500 or 100 program and erase cycles, a substrate transient hot hole (STHH) reset operation is applied. The substrate transient hot hole reset injects holes that are far away junction than band-to-band tunneling hot hole (BTBTHH) injection such that the STHH reset on cycle endurance is able to maintain a desirable cycle window to eliminate or reduce the hard-to erase condition in subsequent program and erase cycles.

摘要翻译： 提供了一种操作氮化物捕获存储单元的方法，通过采用复位技术来消除或减少接合区中间的电子数量来解决硬擦除条件。 当在一系列编程和擦除周期（例如500或100个编程和擦除周期）之后检测到难以擦除的条件时，应用基板瞬态热孔（STHH）复位操作。 衬底瞬态热孔复位注入与带 - 带隧道热孔（BTBTHH）注入相距较远的结的孔，使得周期耐久下的STHH复位能够保持期望的循环窗口，以消除或减少难以 随后的编程和擦除周期中的擦除条件。