公开(公告)号：US20130077396A1

公开(公告)日：2013-03-28

申请号：US13526961

申请日：2012-06-19

申请人： Tsuyoshi Kondo ,  Hirofumi Morise ,  Shiho Nakamura ,  Junichi Akiyama

发明人： Tsuyoshi Kondo ,  Hirofumi Morise ,  Shiho Nakamura ,  Junichi Akiyama

IPC分类号： G11C11/15

CPC分类号： G11C11/1673 ,  G11C11/161 ,  Y10S977/933 ,  Y10S977/935

摘要： A magnetic memory element includes a first magnetic layer, a second magnetic layer, a first intermediate layer, a first magnetic wire, a first input unit, and a first detection unit. The first magnetic layer has magnetization fixed. The second magnetic layer has magnetization which is variable. The first intermediate layer is between the first magnetic layer and the second magnetic layer. The first magnetic wire extends in a first direction perpendicular to a direction connecting from the first magnetic layer to the second magnetic layer and is adjacent to the second magnetic layer. In addition, write-in is performed by propagating a first spin wave through the first magnetic wire and by passing a first current from the first magnetic layer toward the second magnetic layer. Read-out is performed by passing a second current from the first magnetic layer toward the second magnetic layer.

摘要翻译： 磁存储元件包括第一磁性层，第二磁性层，第一中间层，第一磁性线，第一输入单元和第一检测单元。 第一磁性层具有固定的磁化。 第二磁性层具有可变的磁化。 第一中间层位于第一磁性层和第二磁性层之间。 第一磁性线沿垂直于从第一磁性层连接到第二磁性层的方向的第一方向延伸并与第二磁性层相邻。 另外，通过将第一自旋波传播通过第一磁线并且通过使第一电流从第一磁性层向第二磁性层传递来执行写入。 通过将第二电流从第一磁性层传递到第二磁性层来执行读出。

公开(公告)号：US20120061782A1

公开(公告)日：2012-03-15

申请号：US13229966

申请日：2011-09-12

申请人： Tsuyoshi Kondo ,  Hirofumi Morise ,  Shiho Nakamura

发明人： Tsuyoshi Kondo ,  Hirofumi Morise ,  Shiho Nakamura

IPC分类号： H01L43/02

CPC分类号： H01L43/08 ,  H01F10/3268 ,  H01F10/3286

摘要： A spin wave device comprises a metal layer, a pinned layer, a nonmagnetic layer, a free layer, an antiferromagnetic layer, a first electrode, a first insulator layer, and a second electrode. The pinned layer has a magnetization whose direction is fixed. The free layer has a magnetization whose direction is variable.

摘要翻译： 自旋波装置包括金属层，钉扎层，非磁性层，自由层，反铁磁层，第一电极，第一绝缘体层和第二电极。 钉扎层具有方向固定的磁化。 自由层具有方向可变的磁化。

公开(公告)号：US20110234216A1

公开(公告)日：2011-09-29

申请号：US12880606

申请日：2010-09-13

申请人： Shiho Nakamura ,  Daisuke Saida ,  Hirofumi Morise ,  Tsuyoshi Kondo

发明人： Shiho Nakamura ,  Daisuke Saida ,  Hirofumi Morise ,  Tsuyoshi Kondo

IPC分类号： G01R33/02

CPC分类号： G01R33/1284 ,  G11C11/14 ,  G11C11/161 ,  H01L27/222 ,  H01L27/226 ,  H01L29/66984

摘要： A spin wave element includes a substrate, a multilayer, a detecting portion, and two or more input portions. The multilayer having a lamination direction thereof is formed on the substrate and includes a first ferromagnetic layer. The first ferromagnetic layer has magnetization whose direction is in the lamination direction. The detecting portion and the input portions are formed on the multilayer and separated from each other by a first nonmagnetic layer. In addition, a portion of an outer edge of the multilayer viewed from the lamination direction makes a portion of one ellipsoid. The detecting portion and one of the input portions are located on the long axis of the one ellipsoid. The portion of the one ellipsoid is located on a side of one of the input portions.

摘要翻译： 自旋波元件包括基板，多层，检测部分和两个或更多个输入部分。 具有层压方向的多层形成在基板上，并且包括第一铁磁层。 第一铁磁层具有方向在层叠方向上的磁化。 检测部分和输入部分形成在多层上并且通过第一非磁性层彼此分离。 此外，从层叠方向观察的多层的外边缘的一部分形成一个椭圆体的一部分。 检测部分和输入部分之一位于一个椭圆体的长轴上。 一个椭圆体的一部分位于一个输入部分的一侧。

公开(公告)号：US07889543B2

公开(公告)日：2011-02-15

申请号：US12379402

申请日：2009-02-20

申请人： Hirofumi Morise ,  Shiho Nakamura ,  Yuichi Ohsawa ,  Satoshi Yanagi ,  Daisuke Saida

发明人： Hirofumi Morise ,  Shiho Nakamura ,  Yuichi Ohsawa ,  Satoshi Yanagi ,  Daisuke Saida

IPC分类号： G11C11/02

CPC分类号： H01L27/228 ,  G11C11/161 ,  H01L43/08

摘要： A magnetic memory element is provided with first and second ferromagnetic fixed layers, a ferromagnetic memory layer, nonmagnetic first and second intermediate layers. The memory layer is disposed between the first and second fixed layers, and has a variable magnetization direction. In order to cancel asymmetry of a write-in current of the element, the element is provided so that the memory layer receives a larger perpendicular stray field from the first fixed layer than from the second fixed layer, and then a magnetization direction of a portion of the memory layer being nearest to the first intermediate layer and the magnetization direction of the first fixed layer are antiparallel to each other whenever a magnetization direction of a portion of the memory layer being nearest to the second intermediate layer and the magnetization direction of the second fixed layer are parallel to each other, and vice versa.

摘要翻译： 磁存储元件设置有第一和第二铁磁固定层，铁磁存储层，非磁性第一和第二中间层。 存储层设置在第一和第二固定层之间，具有可变的磁化方向。 为了消除元件的写入电流的不对称性，提供元件，使得存储层从第一固定层接收比来自第二固定层的更大的垂直杂散场，然后接收部分的磁化方向 所述存储层的最靠近所述第一中间层的磁化方向和所述第一固定层的磁化方向在所述存储层的一部分的磁化方向最接近所述第二中间层的磁化方向和所述第二中间层的磁化方向相互反平行时， 固定层彼此平行，反之亦然。

公开(公告)号：US09019757B2

公开(公告)日：2015-04-28

申请号：US12880606

申请日：2010-09-13

申请人： Shiho Nakamura ,  Daisuke Saida ,  Hirofumi Morise ,  Tsuyoshi Kondo

发明人： Shiho Nakamura ,  Daisuke Saida ,  Hirofumi Morise ,  Tsuyoshi Kondo

IPC分类号： G11C11/16 ,  G11C11/14 ,  G01R33/12 ,  H01L27/22 ,  H01L29/66

CPC分类号： G01R33/1284 ,  G11C11/14 ,  G11C11/161 ,  H01L27/222 ,  H01L27/226 ,  H01L29/66984

摘要： A spin wave element includes a substrate, a multilayer, a detecting portion, and two or more input portions. The multilayer having a lamination direction thereof is formed on the substrate and includes a first ferromagnetic layer. The first ferromagnetic layer has magnetization whose direction is in the lamination direction. The detecting portion and the input portions are formed on the multilayer and separated from each other by a first nonmagnetic layer. In addition, a portion of an outer edge of the multilayer viewed from the lamination direction makes a portion of one ellipsoid. The detecting portion and one of the input portions are located on the long axis of the one ellipsoid. The portion of the one ellipsoid is located on a side of one of the input portions.

摘要翻译： 自旋波元件包括基板，多层，检测部分和两个或更多个输入部分。 具有层压方向的多层形成在基板上，并且包括第一铁磁层。 第一铁磁层具有方向在层叠方向上的磁化。 检测部分和输入部分形成在多层上并且通过第一非磁性层彼此分离。 此外，从层叠方向观察的多层的外边缘的一部分形成一个椭圆体的一部分。 检测部分和输入部分之一位于一个椭圆体的长轴上。 一个椭圆体的一部分位于一个输入部分的一侧。

公开(公告)号：US08917152B2

公开(公告)日：2014-12-23

申请号：US13487769

申请日：2012-06-04

申请人： Tsuyoshi Kondo ,  Hirofumi Morise ,  Shiho Nakamura

发明人： Tsuyoshi Kondo ,  Hirofumi Morise ,  Shiho Nakamura

IPC分类号： H01P1/203 ,  H01P1/215 ,  H03C1/34

CPC分类号： H01P1/20345 ,  H01P1/203 ,  H03C1/34

摘要： A spin wave device according to an embodiment includes: an input interconnect transmitting an input impulse signal; a multilayer film including a foundation layer; a first magnetic layer formed on the multilayer film and generating spin waves when receiving the input impulse signal, the spin waves propagating through the first magnetic layer; a plurality of input electrodes arranged in a straight line on the first magnetic layer, being connected to the input interconnect, and transmitting the input impulse signal to the first magnetic layer; and a plurality of sensing electrodes sensing the spin waves, being arranged on the first magnetic layer, and being located at different distances from one another from the straight line having the input electrodes arranged therein, and the following equation is satisfied: d=Vg×t0.

摘要翻译： 根据实施例的自旋波装置包括：输入互连件，其传输输入脉冲信号; 包括基础层的多层膜; 形成在所述多层膜上并在接收所述输入脉冲信号时产生自旋波的第一磁性层，所述自旋波通过所述第一磁性层传播; 多个输入电极，布置在第一磁性层上的直线上，连接到输入互连，并将输入脉冲信号传输到第一磁性层; 以及感测旋转波的多个感测电极，布置在第一磁性层上，并且与其中布置有输入电极的直线彼此不同的距离设置，满足以下等式：d = Vg× t0。

公开(公告)号：US08830742B2

公开(公告)日：2014-09-09

申请号：US13713482

申请日：2012-12-13

申请人： Tsuyoshi Kondo ,  Hirofumi Morise ,  Shiho Nakamura

发明人： Tsuyoshi Kondo ,  Hirofumi Morise ,  Shiho Nakamura

IPC分类号： G11C11/15 ,  G11C11/10 ,  G11C11/02 ,  G11C11/16 ,  G11C11/06 ,  G11C11/155

CPC分类号： G11C11/16 ,  G11C11/161

摘要： A magnetic memory according to an embodiment includes: a magnetic structure extending in a first direction and having a circular ring-like shape in cross-section in a plane perpendicular to the first direction; a nonmagnetic layer formed on an outer surface of the magnetic structure, the outer surface extending in the first direction; and at least one reference portion formed on part of a surface of the nonmagnetic layer, the surface being on the opposite side from the magnetic structure, the at least one reference portion containing a magnetic material.

摘要翻译： 根据实施例的磁存储器包括：在垂直于第一方向的平面中沿第一方向延伸并具有圆形环形形状的磁性结构， 形成在所述磁性结构的外表面上的非磁性层，所述外表面沿所述第一方向延伸; 以及形成在非磁性层的表面的一部分上的至少一个参考部分，所述表面位于与磁性结构相反的一侧，所述至少一个参考部分包含磁性材料。

公开(公告)号：US20120224416A1

公开(公告)日：2012-09-06

申请号：US13235664

申请日：2011-09-19

申请人： Tsuyoshi Kondo ,  Hirofumi Morise ,  Shiho Nakamura ,  Yoshinari Kurosaki

发明人： Tsuyoshi Kondo ,  Hirofumi Morise ,  Shiho Nakamura ,  Yoshinari Kurosaki

IPC分类号： G11C11/16 ,  H01L29/82

CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L29/82 ,  H01L43/08

摘要： A magnetic memory includes a first magnetic layer, a second magnetic layer, a third magnetic layer, a first intermediate layer, a second intermediate layer, an insulator film, and an electrode. The third magnetic layer is provided between the first magnetic layer and the second magnetic layer in a first direction being perpendicular to the plane of both the first magnetic layer and the second magnetic layer. The insulator film is provided on the third magnetic layer in a second direction perpendicular to the first direction. The electrode is provided on the insulator film so that the insulator is sandwiched between the third magnetic layer and the electrode in the second direction. In addition, a positive voltage is applied to the electrode and a first current passes from the first magnetic layer to the second magnetic layer, thereby writing information to the second magnetic layer.

摘要翻译： 磁存储器包括第一磁性层，第二磁性层，第三磁性层，第一中间层，第二中间层，绝缘膜和电极。 第三磁性层在与第一磁性层和第二磁性层的平面垂直的第一方向上设置在第一磁性层和第二磁性层之间。 绝缘体膜在与第一方向垂直的第二方向上设置在第三磁性层上。 电极设置在绝缘膜上，使得绝缘体沿第二方向被夹在第三磁性层和电极之间。 此外，向电极施加正电压，并且第一电流从第一磁性层流到第二磁性层，从而将信息写入第二磁性层。

公开(公告)号：US08085582B2

公开(公告)日：2011-12-27

申请号：US12216918

申请日：2008-07-11

申请人： Shiho Nakamura ,  Hirofumi Morise ,  Satoshi Yanagi ,  Daisuke Saida ,  Akira Kikitsu

发明人： Shiho Nakamura ,  Hirofumi Morise ,  Satoshi Yanagi ,  Daisuke Saida ,  Akira Kikitsu

IPC分类号： G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  G11C11/02

CPC分类号： G11C11/22 ,  G11B5/66 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675

摘要： A magnetic recording device includes: a laminated body including: a first ferromagnetic layer with a magnetization substantially fixed in a first direction; a second ferromagnetic layer with a variable magnetization direction; a first nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer; and a third ferromagnetic layer with a variable magnetization direction. The magnetization direction of the second ferromagnetic layer is determinable in response to the orientation of a current, by allowing electrons spin-polarized by passing a current in a direction generally perpendicular to the film plane of the layers of the laminated body to act on the second ferromagnetic layer, and by allowing a magnetic field generated by precession of the magnetization of the third ferromagnetic layer to act on the second ferromagnetic layer.

摘要翻译： 磁记录装置包括：层叠体，包括：第一铁磁层，其具有基本上沿第一方向固定的磁化; 具有可变磁化方向的第二铁磁层; 设置在所述第一铁磁层和所述第二铁磁层之间的第一非磁性层; 和具有可变磁化方向的第三铁磁层。 第二铁磁层的磁化方向可以响应于电流的取向而被确定，通过使电子通过沿着大体上垂直于层叠体的层的膜平面的方向的电流进行自旋极化来作用于第二 铁磁层，并且通过允许由第三铁磁层的磁化进行而产生的磁场作用在第二铁磁层上。

公开(公告)号：US08077509B2

公开(公告)日：2011-12-13

申请号：US12320955

申请日：2009-02-10

申请人： Satoshi Yanagi ,  Yuichi Ohsawa ,  Shiho Nakamura ,  Daisuke Saida ,  Hirofumi Morise

发明人： Satoshi Yanagi ,  Yuichi Ohsawa ,  Shiho Nakamura ,  Daisuke Saida ,  Hirofumi Morise

IPC分类号： G11C11/15

CPC分类号： G11B25/04 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675

摘要： A magnetic memory is provided with a memory cell. The memory cell includes a magnetic recording element, an interconnection to generate a radio-frequency current-induced magnetic field and a ground line. The magnetic recording element is provided with a first magnetic layer whose magnetization direction is substantially fixed, a magnetic recording layer whose magnetization direction is substantially reversed by spin-polarized electrons passing through the magnetic recording layer and a first nonmagnetic layer provided between the first magnetic layer and the magnetic recording layer. The interconnection is provided above the magnetic recording element to generate a radio-frequency current-induced magnetic field acting in a direction substantially perpendicular to a magnetization easy axis of the magnetic recording layer. The ground line is provided on a side opposite to the magnetic recording element with respect to the interconnection.

摘要翻译： 磁存储器设置有存储单元。 存储单元包括磁记录元件，用于产生射频电流感应磁场和接地线的互连。 磁记录元件设置有其磁化方向基本上固定的第一磁性层，其磁化方向基本上由通过磁记录层的自旋极化电子反转的磁记录层和设置在第一磁性层之间的第一非磁性层 和磁记录层。 互连设置在磁记录元件的上方，以产生沿与磁记录层的易磁化轴基本垂直的方向作用的射频电流感应磁场。 接地线相对于互连设置在与磁记录元件相对的一侧上。