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公开(公告)号：US20120242438A1
公开(公告)日：2012-09-27
申请号：US13238631
申请日：2011-09-21
IPC分类号： H01F7/02
CPC分类号： H01F10/329 , G01R33/093 , G01R33/1284 , G11C11/161 , H01F10/3295 , H01L43/08 , H03B15/006
摘要： According to one embodiment, a magnetic oscillation element includes a first electrode/a second magnetic layer/a nonmagnetic spacer layer/a first magnetic layer/ a second electrode, stacked in this order. The first magnetic layer has variable magnetization direction. The second magnetic layer has fixed magnetization direction. A thickness of the first magnetic layer in a direction connecting the first and second electrodes is greater than 2 times a spin penetration depth of the first magnetic layer. The thickness of the first magnetic layer is less than a maximum width of the second electrode. The first magnetic layer has edge portion provided outside the first surface when viewed along the direction. A width of the edge portion in a direction perpendicular to a tangent of an edge of the second electrode is not less than an exchange length of the first magnetic layer.
摘要翻译： 根据一个实施例，磁振荡元件包括依次堆叠的第一电极/第二磁性层/非磁性间隔层/第一磁性层/第二电极。 第一磁性层具有可变的磁化方向。 第二磁性层具有固定的磁化方向。 连接第一和第二电极的方向上的第一磁性层的厚度大于第一磁性层的自旋穿透深度的2倍。 第一磁性层的厚度小于第二电极的最大宽度。 当沿该方向观察时，第一磁性层具有设置在第一表面之外的边缘部分。 边缘部分在与第二电极的边缘的切线垂直的方向上的宽度不小于第一磁性层的交换长度。
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公开(公告)号：US08644057B2
公开(公告)日：2014-02-04
申请号：US13235664
申请日：2011-09-19
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L29/82 , H01L43/08
摘要： A magnetic memory includes a first magnetic layer, a second magnetic layer, a third magnetic layer, a first intermediate layer, a second intermediate layer, an insulator film, and an electrode. The third magnetic layer is provided between the first magnetic layer and the second magnetic layer in a first direction being perpendicular to the plane of both the first magnetic layer and the second magnetic layer. The insulator film is provided on the third magnetic layer in a second direction perpendicular to the first direction. The electrode is provided on the insulator film so that the insulator is sandwiched between the third magnetic layer and the electrode in the second direction. In addition, a positive voltage is applied to the electrode and a first current passes from the first magnetic layer to the second magnetic layer, thereby writing information to the second magnetic layer.
摘要翻译： 磁存储器包括第一磁性层，第二磁性层，第三磁性层，第一中间层，第二中间层，绝缘膜和电极。 第三磁性层在垂直于第一磁性层和第二磁性层的平面的第一方向上设置在第一磁性层和第二磁性层之间。 绝缘体膜在与第一方向垂直的第二方向上设置在第三磁性层上。 电极设置在绝缘膜上，使得绝缘体沿第二方向被夹在第三磁性层和电极之间。 此外，向电极施加正电压，并且第一电流从第一磁性层流到第二磁性层，从而将信息写入第二磁性层。
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公开(公告)号：US20120224416A1
公开(公告)日：2012-09-06
申请号：US13235664
申请日：2011-09-19
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L29/82 , H01L43/08
摘要： A magnetic memory includes a first magnetic layer, a second magnetic layer, a third magnetic layer, a first intermediate layer, a second intermediate layer, an insulator film, and an electrode. The third magnetic layer is provided between the first magnetic layer and the second magnetic layer in a first direction being perpendicular to the plane of both the first magnetic layer and the second magnetic layer. The insulator film is provided on the third magnetic layer in a second direction perpendicular to the first direction. The electrode is provided on the insulator film so that the insulator is sandwiched between the third magnetic layer and the electrode in the second direction. In addition, a positive voltage is applied to the electrode and a first current passes from the first magnetic layer to the second magnetic layer, thereby writing information to the second magnetic layer.
摘要翻译： 磁存储器包括第一磁性层，第二磁性层，第三磁性层，第一中间层，第二中间层，绝缘膜和电极。 第三磁性层在与第一磁性层和第二磁性层的平面垂直的第一方向上设置在第一磁性层和第二磁性层之间。 绝缘体膜在与第一方向垂直的第二方向上设置在第三磁性层上。 电极设置在绝缘膜上，使得绝缘体沿第二方向被夹在第三磁性层和电极之间。 此外，向电极施加正电压，并且第一电流从第一磁性层流到第二磁性层，从而将信息写入第二磁性层。
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公开(公告)号：US08569852B2
公开(公告)日：2013-10-29
申请号：US13238631
申请日：2011-09-21
CPC分类号： H01F10/329 , G01R33/093 , G01R33/1284 , G11C11/161 , H01F10/3295 , H01L43/08 , H03B15/006
摘要： According to one embodiment, a magnetic oscillation element includes a first electrode/a second magnetic layer/a nonmagnetic spacer layer/a first magnetic layer/a second electrode, stacked in this order. The first magnetic layer has variable magnetization direction. The second magnetic layer has fixed magnetization direction. A thickness of the first magnetic layer in a direction connecting the first and second electrodes is greater than 2 times a spin penetration depth of the first magnetic layer. The thickness of the first magnetic layer is less than a maximum width of the second electrode. The first magnetic layer has edge portion provided outside the first surface when viewed along the direction. A width of the edge portion in a direction perpendicular to a tangent of an edge of the second electrode is not less than an exchange length of the first magnetic layer.
摘要翻译： 根据一个实施例，磁振荡元件包括依次堆叠的第一电极/第二磁性层/非磁性间隔层/第一磁性层/第二电极。 第一磁性层具有可变的磁化方向。 第二磁性层具有固定的磁化方向。 连接第一和第二电极的方向上的第一磁性层的厚度大于第一磁性层的自旋穿透深度的2倍。 第一磁性层的厚度小于第二电极的最大宽度。 当沿该方向观察时，第一磁性层具有设置在第一表面之外的边缘部分。 边缘部分在与第二电极的边缘的切线垂直的方向上的宽度不小于第一磁性层的交换长度。
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公开(公告)号：US08982611B2
公开(公告)日：2015-03-17
申请号：US13526961
申请日：2012-06-19
CPC分类号： G11C11/1673 , G11C11/161 , Y10S977/933 , Y10S977/935
摘要： A magnetic memory element includes a first magnetic layer, a second magnetic layer, a first intermediate layer, a first magnetic wire, a first input unit, and a first detection unit. The first magnetic layer has magnetization fixed. The second magnetic layer has magnetization which is variable. The first intermediate layer is between the first magnetic layer and the second magnetic layer. The first magnetic wire extends in a first direction perpendicular to a direction connecting from the first magnetic layer to the second magnetic layer and is adjacent to the second magnetic layer. In addition, write-in is performed by propagating a first spin wave through the first magnetic wire and by passing a first current from the first magnetic layer toward the second magnetic layer. Read-out is performed by passing a second current from the first magnetic layer toward the second magnetic layer.
摘要翻译： 磁存储元件包括第一磁性层，第二磁性层，第一中间层，第一磁性线，第一输入单元和第一检测单元。 第一磁性层具有固定的磁化。 第二磁性层具有可变的磁化。 第一中间层位于第一磁性层和第二磁性层之间。 第一磁性线沿垂直于从第一磁性层连接到第二磁性层的方向的第一方向延伸并与第二磁性层相邻。 此外，通过将第一自旋波传播通过第一磁线并通过使第一电流从第一磁性层向第二磁性层传递来执行写入。 通过将第二电流从第一磁性层传递到第二磁性层来进行读出。
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公开(公告)号：US20130235653A1
公开(公告)日：2013-09-12
申请号：US13713482
申请日：2012-12-13
申请人： Tsuyoshi KONDO , Hirofumi Morise , Shiho Nakamura
发明人： Tsuyoshi KONDO , Hirofumi Morise , Shiho Nakamura
IPC分类号： G11C11/16
CPC分类号： G11C11/16 , G11C11/161
摘要： A magnetic memory according to an embodiment includes: a magnetic structure extending in a first direction and having a circular ring-like shape in cross-section in a plane perpendicular to the first direction; a nonmagnetic layer formed on an outer surface of the magnetic structure, the outer surface extending in the first direction; and at least one reference portion formed on part of a surface of the nonmagnetic layer, the surface being on the opposite side from the magnetic structure, the at least one reference portion containing a magnetic material.
摘要翻译： 根据实施例的磁存储器包括：在垂直于第一方向的平面中沿第一方向延伸并具有圆形环形形状的磁性结构， 形成在所述磁性结构的外表面上的非磁性层，所述外表面沿所述第一方向延伸; 以及形成在非磁性层的表面的一部分上的至少一个参考部分，所述表面位于与磁性结构相反的一侧，所述至少一个参考部分包含磁性材料。
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公开(公告)号：US20130077395A1
公开(公告)日：2013-03-28
申请号：US13422030
申请日：2012-03-16
申请人： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura
发明人： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura
CPC分类号： G11C11/14 , G11C11/161 , G11C11/1675
摘要： A magnetic memory device comprises a magnetic wire extending in a first direction, a pair of first electrodes operable to pass a current through the magnetic wire in the first direction or in an opposite direction to the first direction, a first insulating layer provided on the magnetic wire in a second direction being substantially perpendicular to the first direction, a plurality of second electrodes provided on the first insulating layer and provided at specified interval in the second direction, and a third electrode electrically connected to the plurality of second electrodes.
摘要翻译： 一种磁存储器件包括沿第一方向延伸的磁线，一对第一电极，可操作以使电流沿第一方向或与第一方向相反的方向通过磁线;第一绝缘层，设置在磁性 在第二方向上的导线基本上垂直于第一方向;多个第二电极，设置在第一绝缘层上，并在第二方向上以规定的间隔设置，第三电极与多个第二电极电连接。
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公开(公告)号：US20120280769A1
公开(公告)日：2012-11-08
申请号：US13487769
申请日：2012-06-04
申请人： Tsuyoshi KONDO , Hirofumi Morise , Shiho Nakamura
发明人： Tsuyoshi KONDO , Hirofumi Morise , Shiho Nakamura
IPC分类号： H01P1/218
CPC分类号： H01P1/20345 , H01P1/203 , H03C1/34
摘要： A spin wave device according to an embodiment includes: an input interconnect transmitting an input impulse signal; a multilayer film including a foundation layer; a first magnetic layer formed on the multilayer film and generating spin waves when receiving the input impulse signal, the spin waves propagating through the first magnetic layer; a plurality of input electrodes arranged in a straight line on the first magnetic layer, being connected to the input interconnect, and transmitting the input impulse signal to the first magnetic layer; and a plurality of sensing electrodes sensing the spin waves, being arranged on the first magnetic layer, and being located at different distances from one another from the straight line having the input electrodes arranged therein, and the following equation is satisfied: d=Vg×t0.
摘要翻译： 根据实施例的自旋波装置包括：输入互连件，其传输输入脉冲信号; 包括基底层的多层膜; 形成在所述多层膜上并在接收所述输入脉冲信号时产生自旋波的第一磁性层，所述自旋波通过所述第一磁性层传播; 多个输入电极，布置在第一磁性层上的直线上，连接到输入互连，并将输入脉冲信号传输到第一磁性层; 以及感测旋转波的多个感测电极，布置在第一磁性层上，并且与其中布置有输入电极的直线彼此不同的距离设置，满足以下等式：d = Vg× t0。
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公开(公告)号：US08745120B2
公开(公告)日：2014-06-03
申请号：US13349871
申请日：2012-01-13
申请人： Hirofumi Morise , Shiho Nakamura , Daisuke Saida , Tsuyoshi Kondo
发明人： Hirofumi Morise , Shiho Nakamura , Daisuke Saida , Tsuyoshi Kondo
IPC分类号： G06F7/50
CPC分类号： G06F7/388
摘要： According to an embodiment, an adder includes first and second wave computing units and a threshold wave computing unit. Each of the first and second wave computing units includes a pair of first input sections, a first wave transmission medium having a continuous film including a magnetic body connected to the first input sections, and a first wave detector outputting a result of computation by spin waves induced in the first wave transmission medium by the signals corresponding to the two bit values. The threshold wave computing unit includes a plurality of third input sections, a third wave transmission medium having a continuous film including a magnetic body connected to the third input sections, and a third wave detector a result of computation by spin waves induced in the third wave transmission medium.
摘要翻译： 根据实施例，加法器包括第一和第二波计算单元和阈值波计算单元。 第一和第二波形计算单元中的每一个包括一对第一输入部分，具有包括连接到第一输入部分的磁体的连续膜的第一波传播介质和输出通过自旋波的计算结果的第一波检测器 在第一波传输介质中通过对应于两位值的信号感应。 阈值波计算单元包括多个第三输入部分，具有包括连接到第三输入部分的磁体的连续胶片的第三波传播介质，以及第三波检测器，由第三波中感应的自旋波的计算结果 传输介质。
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公开(公告)号：US20130077396A1
公开(公告)日：2013-03-28
申请号：US13526961
申请日：2012-06-19
IPC分类号： G11C11/15
CPC分类号： G11C11/1673 , G11C11/161 , Y10S977/933 , Y10S977/935
摘要： A magnetic memory element includes a first magnetic layer, a second magnetic layer, a first intermediate layer, a first magnetic wire, a first input unit, and a first detection unit. The first magnetic layer has magnetization fixed. The second magnetic layer has magnetization which is variable. The first intermediate layer is between the first magnetic layer and the second magnetic layer. The first magnetic wire extends in a first direction perpendicular to a direction connecting from the first magnetic layer to the second magnetic layer and is adjacent to the second magnetic layer. In addition, write-in is performed by propagating a first spin wave through the first magnetic wire and by passing a first current from the first magnetic layer toward the second magnetic layer. Read-out is performed by passing a second current from the first magnetic layer toward the second magnetic layer.
摘要翻译： 磁存储元件包括第一磁性层，第二磁性层，第一中间层，第一磁性线，第一输入单元和第一检测单元。 第一磁性层具有固定的磁化。 第二磁性层具有可变的磁化。 第一中间层位于第一磁性层和第二磁性层之间。 第一磁性线沿垂直于从第一磁性层连接到第二磁性层的方向的第一方向延伸并与第二磁性层相邻。 另外，通过将第一自旋波传播通过第一磁线并且通过使第一电流从第一磁性层向第二磁性层传递来执行写入。 通过将第二电流从第一磁性层传递到第二磁性层来执行读出。
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