公开(公告)号：US11905167B2

公开(公告)日：2024-02-20

申请号：US17932409

申请日：2022-09-15

Applicant: Infineon Technologies AG

Inventor： Wolfgang Klein ,  Evangelos Angelopoulos ,  Stefan Barzen ,  Marc Fueldner ,  Stefan Geissler ,  Matthias Friedrich Herrmann ,  Ulrich Krumbein ,  Konstantin Tkachuk ,  Giordano Tosolini ,  Juergen Wagner

IPC: B81C1/00 ,  B81B3/00 ,  B81B7/02 ,  H04R1/08 ,  H04R7/02 ,  H04R7/08 ,  H04R31/00

CPC classification number: B81C1/00158 ,  B81B3/0021 ,  B81B7/02 ,  B81C1/00103 ,  H04R1/08 ,  H04R7/02 ,  H04R7/08 ,  H04R31/003 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0384 ,  B81C2201/013 ,  H04R2201/003

Abstract: A microfabricated structure includes a perforated stator; a first isolation layer on a first surface of the perforated stator; a second isolation layer on a second surface of the perforated stator; a first membrane on the first isolation layer; a second membrane on the second isolation layer; and a pillar coupled between the first membrane and the second membrane, wherein the first isolation layer includes a first tapered edge portion having a common surface with the first membrane, wherein the second isolation layer includes a first tapered edge portion having a common surface with the second membrane, and wherein an endpoint of the first tapered edge portion of the first isolation layer is laterally offset with respect to an endpoint of the first tapered edge portion of the second isolation layer.

公开(公告)号：US20230160732A1

公开(公告)日：2023-05-25

申请号：US18065394

申请日：2022-12-13

Applicant: Infineon Technologies AG

Inventor： Martin Seidl ,  Christian Bretthauer ,  Wolfgang Klein ,  Ulrich Krumbein ,  David Tumpold

IPC: G01F1/688 ,  G01F1/86

CPC classification number: G01F1/6888 ,  G01F1/86

Abstract: A thermoresistive micro sensor device includes a semiconductor chip; a through hole, which runs through the semiconductor chip from an upper side to a lower side; electrically conductive structures, wherein the middle section of each of the electrically conductive structures spans over the through hole at the upper side of the semiconductor chip; an electrically insulating arrangement for electrically insulating the electrically conductive structures and the semiconductor chip from each other, wherein the through hole runs through the electrically insulating arrangement; and a contact arrangement including contacts, wherein each of the contacts is electrically connected to one of the first end sections or one of the second end sections, so that electrical energy is fed to at least one of the electrically conductive structures to heat the respective electrically conductive structure, and so that an electrical resistance of one of the electrically conductive structures is measured at the contact arrangement.

公开(公告)号：US20230002219A1

公开(公告)日：2023-01-05

申请号：US17932409

申请日：2022-09-15

Applicant: Infineon Technologies AG

Inventor： Wolfgang Klein ,  Evangelos Angelopoulos ,  Stefan Barzen ,  Marc Fueldner ,  Stefan Geissler ,  Matthias Friedrich Hermann ,  Ulrich Krumbien ,  Konstantin Tkachuk ,  Giordano Tosolini ,  Juergen Wagner

IPC: B81C1/00 ,  B81B3/00 ,  B81B7/02 ,  H04R1/08 ,  H04R7/02 ,  H04R7/08 ,  H04R31/00

Abstract: A microfabricated structure includes a perforated stator; a first isolation layer on a first surface of the perforated stator; a second isolation layer on a second surface of the perforated stator; a first membrane on the first isolation layer; a second membrane on the second isolation layer; and a pillar coupled between the first membrane and the second membrane, wherein the first isolation layer includes a first tapered edge portion having a common surface with the first membrane, wherein the second isolation layer includes a first tapered edge portion having a common surface with the second membrane, and wherein an endpoint of the first tapered edge portion of the first isolation layer is laterally offset with respect to an endpoint of the first tapered edge portion of the second isolation layer.

公开(公告)号：US11524891B2

公开(公告)日：2022-12-13

申请号：US17151392

申请日：2021-01-18

Applicant: Infineon Technologies AG

Inventor： Wolfgang Klein ,  Evangelos Angelopoulos ,  Stefan Barzen ,  Marc Fueldner ,  Stefan Geissler ,  Matthias Friedrich Herrmann ,  Ulrich Krumbein ,  Konstantin Tkachuk ,  Giordano Tosolini ,  Juergen Wagner

IPC: B81C1/00 ,  H04R7/02 ,  H04R31/00 ,  B81B3/00 ,  B81B7/02 ,  H04R1/08 ,  H04R7/08

Abstract: A microfabricated structure includes a perforated stator; a first isolation layer on a first surface of the perforated stator; a second isolation layer on a second surface of the perforated stator; a first membrane on the first isolation layer; a second membrane on the second isolation layer; and a pillar coupled between the first membrane and the second membrane, wherein the first isolation layer includes a first tapered edge portion having a common surface with the first membrane, wherein the second isolation layer includes a first tapered edge portion having a common surface with the second membrane, and wherein an endpoint of the first tapered edge portion of the first isolation layer is laterally offset with respect to an endpoint of the first tapered edge portion of the second isolation layer.

公开(公告)号：US11470426B2

公开(公告)日：2022-10-11

申请号：US16537308

申请日：2019-08-09

Applicant: Infineon Technologies AG

Inventor： Arnaud Walther ,  Stefan Barzen ,  Wolfgang Klein ,  Johann Strasser

IPC: H04R19/00 ,  H04R19/04 ,  B81B3/00

Abstract: A micro electrical mechanical systems (MEMS) device includes a flexible membrane disposed over a substrate, and a first backplate disposed over the flexible membrane. The first backplate includes a first plurality of bumps facing the flexible membrane. The MEMS device further includes a plurality of features disposed at the flexible membrane, where each of the plurality of features being associated with a corresponding one of the first plurality of bumps.

公开(公告)号：US10536760B2

公开(公告)日：2020-01-14

申请号：US16241340

申请日：2019-01-07

Applicant: Infineon Technologies AG

Inventor： Wolfgang Klein

IPC: H04R1/02 ,  B81B7/00 ,  H04R19/00 ,  H04R19/02 ,  H04R19/04

Abstract: A microelectromechanical system includes a housing with an access opening and a sound transducer with a membrane and a backplate, wherein the sound transducer is coupled to the access opening. The microelectromechanical system includes a filter arranged between the access opening and the sound transducer and includes a filter material and a pretension element, the pretension element being mechanically connected to the filter material, and wherein the pretension element produces stress in the filter material in order to provide a bending deformation of the filter in a direction away from the backplate.

公开(公告)号：US09809444B2

公开(公告)日：2017-11-07

申请号：US15443922

申请日：2017-02-27

Applicant: Infineon Technologies AG

Inventor： Wolfgang Klein

IPC: H04R19/04 ,  B81B3/00 ,  B81C1/00 ,  H02N2/02 ,  H04R19/00

CPC classification number: B81B3/0021 ,  B81B3/0059 ,  B81B2203/0127 ,  B81B2203/0136 ,  B81B2203/0307 ,  B81C1/00158 ,  B81C2201/0197 ,  H01L29/84 ,  H02N1/008 ,  H02N2/02 ,  H04R1/04 ,  H04R1/06 ,  H04R19/005 ,  H04R19/04 ,  H04R31/003 ,  H04R2201/003 ,  H04R2207/021 ,  H04R2231/003 ,  H04R2410/03

Abstract: According to an embodiment, a MEMS device includes a deflectable membrane including a first plurality of electrostatic comb fingers, a first anchor structure including a second plurality of electrostatic comb fingers interdigitated with a first subset of the first plurality of electrostatic comb fingers, and a second anchor structure including a third plurality of electrostatic comb fingers interdigitated with a second subset of the first plurality of electrostatic comb fingers. The second plurality of electrostatic comb fingers are offset from the first plurality of electrostatic comb fingers in a first direction and the third plurality of electrostatic comb fingers are offset from the first plurality of electrostatic comb fingers in a second direction, where the first direction is different from the second direction.

公开(公告)号：US20170311082A1

公开(公告)日：2017-10-26

申请号：US15643842

申请日：2017-07-07

Applicant: Infineon Technologies AG

Inventor： Wolfgang Klein ,  Reinhard Gabl

IPC: H04R7/02 ,  H04R19/00 ,  H04R23/00

CPC classification number: H04R7/02 ,  H04R19/005 ,  H04R23/00 ,  H04R2201/003

Abstract: According to an embodiment, a microfabricated structure includes a cavity disposed in a substrate, a first clamping layer overlying the substrate, a deflectable membrane overlying the first clamping layer, and a second clamping layer overlying the deflectable membrane. A portion of the second clamping layer overlaps the cavity.

公开(公告)号：US20170297899A1

公开(公告)日：2017-10-19

申请号：US15629834

申请日：2017-06-22

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Stefan Barzen ,  Ulrich Krumbein ,  Wolfgang Friza ,  Wolfgang Klein

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0072 ,  B81B2203/0109 ,  B81C1/00325

Abstract: A method for forming a microelectromechanical device may provide forming a first layer at least one of in or over a semiconductor carrier; forming a second layer at least one of in or over at least a central region of the first layer, such that a peripheral region of the first layer is at least partially free of the second layer; removing material under at least a central region of the second layer to release at least one of the central region of the second layer or a central region of the first layer; and/or removing material under at least the peripheral region of the first layer to such that the second layer is supported by the semiconductor carrier via the first layer.

公开(公告)号：US20170247245A1

公开(公告)日：2017-08-31

申请号：US15054310

申请日：2016-02-26

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Stefan Barzen ,  Ulrich Krumbein ,  Wolfgang Friza ,  Wolfgang Klein

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0072 ,  B81B2203/0109 ,  B81C1/00325

Abstract: A microelectromechanical device may include: a semiconductor carrier; a microelectromechanical element disposed in a position distant to the semiconductor carrier; wherein the microelectromechanical element is configured to generate or modify an electrical signal in response to a mechanical signal and/or is configured to generate or modify a mechanical signal in response to an electrical signal; at least one contact pad, which is electrically connected to the microelectromechanical element for transferring the electrical signal between the contact pad and the microelectromechanical element; and a connection structure which extends from the semiconductor carrier to the microelectromechanical element and mechanically couples the microelectromechanical element with the semiconductor carrier.