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    Mechanisms for refractive index tuning semiconductor photonic devices
    31.
    发明授权
    Mechanisms for refractive index tuning semiconductor photonic devices 有权

    公开(公告)号：US11175451B2

    公开(公告)日：2021-11-16

    申请号：US16733167

    申请日：2020-01-02

    Applicant: Intel Corporation

    Inventor： Hasitha Jayatilleka ,  Harel Frish ,  Ranjeet Kumar ,  Haisheng Rong ,  John Heck

    IPC: G02B6/12 ,  G02B6/122 ,  G02B6/134

    Abstract: Embodiments include apparatuses, methods, and systems including a semiconductor photonic device having a waveguide disposed above a substrate. The waveguide has a first section including amorphous silicon with a first refractive index, and a second section including crystalline silicon with a second refractive index different from the first refractive index. The semiconductor photonic device further includes a heat element at a vicinity of the first section of the waveguide. The heat element is arranged to generate heat to transform the amorphous silicon of the first section of the waveguide to partially or completely crystallized crystalline silicon with a third refractive index. The amorphous silicon in the first section may be formed with silicon lattice defects caused by an element implanted into the first section. Other embodiments may also be described and claimed.

    MECHANISMS FOR REFRACTIVE INDEX TUNING SEMICONDUCTOR PHOTONIC DEVICES
    33.
    发明申请
    MECHANISMS FOR REFRACTIVE INDEX TUNING SEMICONDUCTOR PHOTONIC DEVICES 审中-公开

    公开(公告)号：US20200150344A1

    公开(公告)日：2020-05-14

    申请号：US16733167

    申请日：2020-01-02

    Applicant: Intel Corporation

    Inventor： Hasitha Jayatilleka ,  Harel Frish ,  Ranjeet Kumar ,  Haisheng Rong ,  John Heck

    IPC: G02B6/122

    Abstract: Embodiments include apparatuses, methods, and systems including a semiconductor photonic device having a waveguide disposed above a substrate. The waveguide has a first section including amorphous silicon with a first refractive index, and a second section including crystalline silicon with a second refractive index different from the first refractive index. The semiconductor photonic device further includes a heat element at a vicinity of the first section of the waveguide. The heat element is arranged to generate heat to transform the amorphous silicon of the first section of the waveguide to partially or completely crystallized crystalline silicon with a third refractive index. The amorphous silicon in the first section may be formed with silicon lattice defects caused by an element implanted into the first section. Other embodiments may also be described and claimed.

    MULTI-WAVELENGTH LASER
    34.
    发明申请
    MULTI-WAVELENGTH LASER 审中-公开

    公开(公告)号：US20190140415A1

    公开(公告)日：2019-05-09

    申请号：US16233687

    申请日：2018-12-27

    Applicant: INTEL CORPORATION

    Inventor： Jie Sun ,  Haisheng Rong ,  Ranjeet Kumar

    IPC: H01S3/067 ,  H04J14/02 ,  G02B6/12 ,  H01S3/08 ,  H01S3/00

    Abstract: There is disclosed in one example a communication system, including: a data transmission interface; and a wavelength division multiplexing (WDM) silicon laser source to provide modulated data on a carrier laser via the data transmission interface, the WDM laser including a single laser cavity to generate an internally multiplexed multi-wavelength laser, the single laser cavity including a filter having a first grating period to generate a first wavelength and a second grating period to generate a second wavelength, the second grating period superimposed on the first grating period.

    ON-CHIP DIFFRACTION GRATING PREPARED BY CRYSTALLOGRAPHIC WET-ETCH
    37.
    发明申请
    ON-CHIP DIFFRACTION GRATING PREPARED BY CRYSTALLOGRAPHIC WET-ETCH 审中-公开
    晶体湿蚀刻制备的芯片衍射衍射

    公开(公告)号：US20150185377A1

    公开(公告)日：2015-07-02

    申请号：US14635912

    申请日：2015-03-02

    Applicant: Intel Corporation

    Inventor： Yun-Chung Na ,  John Heck ,  Haisheng Rong

    IPC: G02B5/18 ,  G02B6/02

    CPC classification number: G02B5/1857 ,  G02B5/1842 ,  G02B5/1861 ,  G02B6/02009

    Abstract: Methods of forming microelectronic structures are described. Embodiments of those methods may include forming a photomask on a (110) silicon wafer substrate, wherein the photomask comprises a periodic array of parallelogram openings, and then performing a timed wet etch on the (110) silicon wafer substrate to form a diffraction grating structure that is etched into the (110) silicon wafer substrate.

    Abstract translation: 描述形成微电子结构的方法。 这些方法的实施例可以包括在（110）硅晶片衬底上形成光掩模，其中光掩模包括平行四边形开口的周期性阵列，然后在（110）硅晶片衬底上执行定时湿蚀刻以形成衍射光栅结构 被蚀刻到（110）硅晶片衬底中。

    OPTICAL NEURAL NETWORK ACCELERATOR
    38.
    发明公开
    OPTICAL NEURAL NETWORK ACCELERATOR 审中-公开

    公开(公告)号：US20240242067A1

    公开(公告)日：2024-07-18

    申请号：US18621802

    申请日：2024-03-29

    Applicant: Intel Corporation

    Inventor： Songtao Liu ,  Haisheng Rong ,  Mozhgan Mansuri ,  Ram Krishnamurthy

    IPC: G06N3/067

    CPC classification number: G06N3/067

    Abstract: Systems, apparatuses and methods include technology that executes, with a first plurality of panels, a first matrix-matrix multiplication operation of a first layer of an optical neural network (ONN) to generate output optical signals based on input optical signals that pass through an optical path of the ONN, and weights of the first layer of the ONN. The first plurality of panels includes an input panel, a weight panel and a photodetector panel. The executing includes generating, with the input panel, the input optical signals, where the input optical signals represent an input to the first matrix-matrix multiplication operation of the first layer of the ONN, representing, with the weight panel, the weights of the first layer of the ONN, and generating, with the photodetector panel, output photodetector signals based on the output optical signals that are generated based on the input optical signals and the weights.

    PHOTONIC SYSTEM WITH MARKER TONE
    39.
    发明公开
    PHOTONIC SYSTEM WITH MARKER TONE 审中-公开

    公开(公告)号：US20240204879A1

    公开(公告)日：2024-06-20

    申请号：US18523592

    申请日：2023-11-29

    Applicant: Intel Corporation

    Inventor： Duanni Huang ,  Xinru Wu ,  Taehwan Kim ,  Ganesh Balamurugan ,  Haisheng Rong

    IPC: H04B10/50 ,  H04B10/69

    CPC classification number: H04B10/503 ,  H04B10/6911

    Abstract: Embodiments herein relate to an optical system coupled with or including a control logic. The control logic may be configured to identify, based on feedback provided by a photodiode (PD) of an optical receiver, that an amplitude of an optical marker signal output by an interferometer of the optical receiver is above a threshold value. The control logic may further be configured to adjust, based on the identification, a thermo-optic phase tuner of the interferometer, wherein adjustment of the thermo-optic phase tuner results in a change to the amplitude of the optical marker signal. Other embodiments may be described and/or claimed.

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