公开(公告)号：US12222552B2

公开(公告)日：2025-02-11

申请号：US17133347

申请日：2020-12-23

Applicant: Intel Corporation

Inventor： Duanni Huang ,  Saeed Fathololoumi ,  Meer Nazmus Sakib ,  Mohammad Montazeri Najafabadi ,  Chaoxuan Ma ,  David Hui ,  Taehwan Kim ,  Ling Liao ,  Hao Li ,  Ganesh Balamurugan ,  Haisheng Rong ,  Aliasghar Eftekhar

IPC: H04B10/66 ,  G02B6/26 ,  G02B6/27 ,  H04J14/06

Abstract: The present disclosure is directed to photonic wavelength division multiplexing (WDM) receivers with polarization diversity and/or low reflectance. In embodiments, a WDM receiver is provided with a splitter, a plurality of waveguides and a plurality of photodetectors in series. The waveguides having particular equal path lengths relationship from the splitter to respective ones of the photodetectors. In other embodiments, the WDM receiver is provided with a splitter, a looped waveguide, a plurality of photodetectors, and a plurality of variable optical attenuators (VOAs). The VOAs are configured to suppress reflection of signal beams back to the transmitter. In various embodiments, the WDM receiver is a receiver sub-assembly of a silicon photonic transceiver disposed in a silicon package. Other embodiments may be described and/or claimed.

公开(公告)号：US12197004B2

公开(公告)日：2025-01-14

申请号：US17358912

申请日：2021-06-25

Applicant: Intel Corporation

Inventor： Harel Frish ,  John Heck ,  Randal Appleton ,  Stefan Meister ,  Haisheng Rong ,  Joshua Keener ,  Michael Favaro ,  Wesley Harrison ,  Hari Mahalingam ,  Sergei Sochava

IPC: G02B6/12 ,  G02B6/122 ,  H01S5/026

Abstract: Silicon photonic integrated circuit (PIC) on a multi-zone semiconductor on insulator (SOI) substrate having at least a first zone and a second zone. Various optical devices of the PIC may be located above certain substrate zones that are most suitable. A first length of a photonic waveguide structure comprises the crystalline silicon and is within the first zone, while a second length of the waveguide structure is within the second zone. Within a first zone, the crystalline silicon layer is spaced apart from an underlying substrate material by a first thickness of dielectric material. Within the second zone, the crystalline silicon layer is spaced apart from the underlying substrate material by a second thickness of the dielectric material.

公开(公告)号：US10203452B2

公开(公告)日：2019-02-12

申请号：US15395874

申请日：2016-12-30

Applicant: Intel Corporation

Inventor： Jie Sun ,  Haisheng Rong ,  Jonathan K. Doylend

IPC: G02B6/12 ,  G01S17/10 ,  G01S17/42 ,  G01S17/89 ,  G01S7/481 ,  G02B6/34

Abstract: A transmission circuit includes an array of subarrays of emitters with quasi-periodic spacing. A first subarray of emitters emits a source signal, and a second subarray of emitters emits the source signal. The first and second subarrays are separated by a subarray spacing that quasi-periodic, wherein the spacing between different subarrays is different. The quasi-periodic subarray spacing is to cause constructive interference of a main lobe of the emissions from the subarrays, and to cause non-constructive interference of sidelobes of the emissions. The spacing between emitters in the subarrays can vary from one subarray to another.

公开(公告)号：US09709734B2

公开(公告)日：2017-07-18

申请号：US15085766

申请日：2016-03-30

Applicant: Intel Corporation

Inventor： Mahesh Krishnamurthi ,  Judson Ryckman ,  Haisheng Rong ,  Ling Liao ,  Harel Frish ,  Oshrit Harel ,  Assia Barkai ,  Yun-Chung Na ,  Han-Din Liu

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/42 ,  G02B6/132 ,  G02B6/136

CPC classification number: G02B6/122 ,  G02B6/12002 ,  G02B6/1228 ,  G02B6/132 ,  G02B6/136 ,  G02B6/4214 ,  G02B6/4296 ,  G02B2006/12061 ,  G02B2006/121 ,  G02B2006/12104 ,  G02B2006/12147 ,  G02B2006/12152

Abstract: Embodiments of the present disclosure are directed toward techniques and configurations for an optical coupler. In some embodiments, the device may include an optical waveguide to transmit light input from a light source. The optical waveguide may include a semiconductor layer, having a trench with one facet that comprises an edge formed under an approximately 45 degree angle and another facet formed substantially normal to the semiconductor layer. The edge may interface with another medium to form a mirror to receive inputted light and reflect received light substantially perpendicularly to propagate the received light. Other embodiments may be described and/or claimed.

公开(公告)号：US09575341B2

公开(公告)日：2017-02-21

申请号：US14318604

申请日：2014-06-28

Applicant: Intel Corporation

Inventor： John Heck ,  Jonathan K Doylend ,  David N Hutchison ,  Haisheng Rong ,  Jacob B Sendowski

IPC: G02F1/13 ,  G01S17/42 ,  G01S17/89 ,  G01S7/481 ,  G02B6/12 ,  G01S17/10 ,  G01S17/32

CPC classification number: G02F1/1326 ,  G01S7/4817 ,  G01S17/10 ,  G01S17/325 ,  G01S17/42 ,  G01S17/89 ,  G02B6/12004 ,  G02B2006/12061 ,  G02B2006/12147 ,  G02F1/292

Abstract: A solid state photonics circuit having a liquid crystal (LC) layer for beam steering. The LC layer can provide tuning of an array of waveguides by controlling the application of voltage to the liquid crystal. The application of voltage to the liquid crystal can be controlled to perform beam steering with the light signal based on different tuning in each of the waveguides of the array. The waveguides are disposed in a substrate having an oxide or other insulating layer with an opening. The opening in the oxide layer exposes a portion of a path of the array of waveguides. The waveguides are exposed to the liquid crystal through the oxide opening, which allows the voltage changes to the liquid crystal to tune the optical signals in the waveguides.

Abstract translation: 一种具有用于光束转向的液晶（LC）层的固态光子电路。 LC层可以通过控制对液晶的电压施加来提供波导阵列的调谐。 可以控制对液晶的电压施加，使用基于在阵列的每个波导中的不同调谐的光信号进行光束转向。 波导设置在具有开口的氧化物或其它绝缘层的基板中。 氧化物层中的开口暴露波导阵列的路径的一部分。 波导通过氧化物开口暴露于液晶，这允许液晶的电压改变以调谐波导中的光信号。

公开(公告)号：US08803268B2

公开(公告)日：2014-08-12

申请号：US13871083

申请日：2013-04-26

Applicant: Intel Corporation

Inventor： John Heck ,  Ansheng Liu ,  Michael T. Morse ,  Haisheng Rong

IPC: H01L27/14

CPC classification number: H01L31/02327 ,  G02B6/4214

Abstract: A vertical total internal reflection (TIR) mirror and fabrication thereof is made by creating a re-entrant profile using crystallographic silicon etching. Starting with an SOI wafer, a deep silicon etch is used to expose the buried oxide layer, which is then wet-etched (in HF), opening the bottom surface of the Si device layer. This bottom silicon surface is then exposed so that in a crystallographic etch, the resulting shape is a re-entrant trapezoid with facets These facets can be used in conjunction with planar silicon waveguides to reflect the light upwards based on the TIR principle. Alternately, light can be coupled into the silicon waveguides from above the wafer for such purposes as wafer level testing.

Abstract translation: 垂直全内反射（TIR）镜及其制造是通过使用晶体硅蚀刻创建入门轮廓而制成的。 从SOI晶片开始，使用深硅蚀刻来暴露掩埋氧化物层，然后将其湿法蚀刻（在HF中），打开Si器件层的底表面。 然后将该底部硅表面暴露，使得在晶体刻蚀中，所得到的形状是具有刻面的重入梯形。这些刻面可以与平面硅波导结合使用以基于TIR原理向上反射光。 或者，光可以从晶片上方耦合到硅波导中，用于诸如晶片级测试的目的。

公开(公告)号：US20240388366A1

公开(公告)日：2024-11-21

申请号：US18787886

申请日：2024-07-29

Applicant: Intel Corporation

Inventor： Meer Nazmus Sakib ,  Peicheng Liao ,  Ranjeet Kumar ,  Duanni Huang ,  Haisheng Rong ,  Harel Frish ,  John Heck ,  Chaoxuan Ma ,  Hao Li ,  Ganesh Balamurugan

IPC: H04B10/61

Abstract: Embodiments described herein may be related to apparatuses, processes, and techniques related to coherent optical receivers, including coherent receivers with integrated all-silicon waveguide photodetectors and tunable local oscillators implemented within CMOS technology. Embodiments are also directed to tunable silicon hybrid lasers with integrated temperature sensors to control wavelength. Embodiments are also directed to post-process phase correction of optical hybrid and nested I/Q modulators. Embodiments are also directed to demultiplexing photodetectors based on multiple microrings. In embodiments, all components may be implements on a silicon substrate. Other embodiments may be described and/or claimed.

公开(公告)号：US10727640B2

公开(公告)日：2020-07-28

申请号：US16233687

申请日：2018-12-27

Applicant: INTEL CORPORATION

Inventor： Jie Sun ,  Haisheng Rong ,  Ranjeet Kumar

IPC: H04J14/02 ,  H01S3/067 ,  H01S3/00 ,  H01S3/08 ,  G02B6/12 ,  H04B10/50

Abstract: There is disclosed in one example a communication system, including: a data transmission interface; and a wavelength division multiplexing (WDM) silicon laser source to provide modulated data on a carrier laser via the data transmission interface, the WDM laser including a single laser cavity to generate an internally multiplexed multi-wavelength laser, the single laser cavity including a filter having a first grating period to generate a first wavelength and a second grating period to generate a second wavelength, the second grating period superimposed on the first grating period.

公开(公告)号：US10606004B2

公开(公告)日：2020-03-31

申请号：US15995694

申请日：2018-06-01

Applicant: Intel Corporation

Inventor： Jahnavi Sharma ,  Ganesh Balamurugan ,  Hao Li ,  Meer Nazmus Sakib ,  Haisheng Rong

IPC: G02B6/43 ,  H01L27/146 ,  H04B10/67 ,  G02B6/12 ,  H01L31/12 ,  H01L31/14 ,  H04B10/66

Abstract: Embodiments herein may relate to an optoelectronic receiver that includes a photonic integrated circuit (PIC) coupled with a light source. Respective PIC sections of the PIC may include a photodiode and a junction capacitor. The optoelectronic receiver may further include an electronic integrated circuit (EIC) coupled with the PIC. Respective EIC sections of the EIC may be communicatively coupled to respective ones of the PIC sections. Other embodiments may be described and/or claimed.

公开(公告)号：US10281322B2

公开(公告)日：2019-05-07

申请号：US15786575

申请日：2017-10-17

Applicant: Intel Corporation

Inventor： Jonathan K. Doylend ,  David N. Hutchison ,  John Heck ,  Haisheng Rong ,  Daniel Grodensky ,  David Arbel ,  Israel Petronius

IPC: G01S17/42 ,  G01J1/42 ,  G01B11/22 ,  G01S17/88 ,  G01S17/10 ,  G01S7/481 ,  G01S7/484 ,  G02F1/29

Abstract: An optical circuit includes solid state photonics. The optical circuit includes a phased array of solid state waveguides that perform beamsteering on an optical signal. The optical circuit includes a modulator to modulate a bit sequence onto the carrier frequency of the optical signal, and the beamsteered signal includes the modulated bit sequence. The optical circuit includes a photodetector to detect a reflection of the beamsteered optical signal. The optical circuit autocorrelates the reflection signal with the bit sequence to generate a processed signal.