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公开(公告)号:US20190042913A1
公开(公告)日:2019-02-07
申请号:US15884001
申请日:2018-01-30
Applicant: Intel Corporation
Inventor: Phil Knag , Gregory Kengho Chen , Raghavan Kumar , Huseyin Ekin Sumbul , Ram Kumar Krishnamurthy
IPC: G06N3/04
Abstract: Various systems, devices, and methods for operating on a data sequence. A system includes a set of circuits that form an input layer to receive a data sequence; first hardware computing units to transform the data sequence, the first hardware computing units connected using a set of randomly selected weights, a first hardware computing unit to: receive an input from a second hardware computing unit, determine a weight of a connection between the first and second hardware computing units using an identifier of the second hardware computing unit and a fixed random weight generator, and operate on the input using the weight to determine a state of the first hardware computing unit; and second hardware computing units to operate on states of the first computing units to generate an output based on the data sequence.
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公开(公告)号:US20180189648A1
公开(公告)日:2018-07-05
申请号:US15394976
申请日:2016-12-30
Applicant: Intel Corporation
Inventor: Abhronil Sengupta , Gregory K. Chen , Raghavan Kumar , Huseyin Ekin Sumbul , Phil Knag
Abstract: In one embodiment, a processor is to store a membrane potential of a neural unit of a neural network; and calculate, at a particular time-step of the neural network, a change to the membrane potential of the neural unit occurring over multiple time-steps that have elapsed since the last time-step at which the membrane potential was updated, wherein each of the multiple time-steps that have elapsed since the last time-step is associated with at least one input to the neural unit that affects the membrane potential of the neural unit.
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33.
公开(公告)号:US20180189646A1
公开(公告)日:2018-07-05
申请号:US15396147
申请日:2016-12-30
Applicant: Intel Corporation
Inventor: Raghavan Kumar , Huseyin E. Sumbul , Gregory K. Chen , Phil Knag
IPC: G06N3/063
CPC classification number: G06N3/0635 , G06N3/049 , G06N3/063
Abstract: Apparatus and method for configuring large numbers of fan-in and fan-out connections in a neuromorphic computer. For example, one embodiment of an apparatus comprises: a plurality of neurons, each neuron uniquely identifiable with a neuron identifier (ID); at least one memory to store neuron addresses with wildcard values to establish fan-in and/or fan-out connections between the neurons; and a router to translate at least one neuron address containing wildcard values into two or more neuron IDs to establish the fan-in and/or fan-out connections between the neurons.
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公开(公告)号:US11783160B2
公开(公告)日:2023-10-10
申请号:US15884001
申请日:2018-01-30
Applicant: Intel Corporation
Inventor: Phil Knag , Gregory Kengho Chen , Raghavan Kumar , Huseyin Ekin Sumbul , Ram Kumar Krishnamurthy
Abstract: Various systems, devices, and methods for operating on a data sequence. A system includes a set of circuits that form an input layer to receive a data sequence; first hardware computing units to transform the data sequence, the first hardware computing units connected using a set of randomly selected weights, a first hardware computing unit to: receive an input from a second hardware computing unit, determine a weight of a connection between the first and second hardware computing units using an identifier of the second hardware computing unit and a fixed random weight generator, and operate on the input using the weight to determine a state of the first hardware computing unit; and second hardware computing units to operate on states of the first computing units to generate an output based on the data sequence.
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公开(公告)号:US11726950B2
公开(公告)日:2023-08-15
申请号:US16586975
申请日:2019-09-28
Applicant: Intel Corporation
Inventor: Huseyin Ekin Sumbul , Gregory K. Chen , Phil Knag , Raghavan Kumar , Ram Krishnamurthy
CPC classification number: G06F15/8046 , G06F17/153 , G06N3/063
Abstract: A compute near memory (CNM) convolution accelerator enables a convolutional neural network (CNN) to use dedicated acceleration to achieve efficient in-place convolution operations with less impact on memory and energy consumption. A 2D convolution operation is reformulated as 1D row-wise convolution. The 1D row-wise convolution enables the CNM convolution accelerator to process input activations row-by-row, while using the weights one-by-one. Lightweight access circuits provide the ability to stream both weights and input rows as vectors to MAC units, which in turn enables modules of the CNM convolution accelerator to implement convolution for both [1×1] and chosen [n×n] sized filters.
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公开(公告)号:US11347994B2
公开(公告)日:2022-05-31
申请号:US16160466
申请日:2018-10-15
Applicant: Intel Corporation
Inventor: Amrita Mathuriya , Sasikanth Manipatruni , Victor Lee , Huseyin Sumbul , Gregory Chen , Raghavan Kumar , Phil Knag , Ram Krishnamurthy , Ian Young , Abhishek Sharma
IPC: G06F3/06 , G06N3/04 , G06F12/0875 , G06N3/063
Abstract: The present disclosure is directed to systems and methods of bit-serial, in-memory, execution of at least an nth layer of a multi-layer neural network in a first on-chip processor memory circuitry portion contemporaneous with prefetching and storing layer weights associated with the (n+1)st layer of the multi-layer neural network in a second on-chip processor memory circuitry portion. The storage of layer weights in on-chip processor memory circuitry beneficially decreases the time required to transfer the layer weights upon execution of the (n+1)st layer of the multi-layer neural network by the first on-chip processor memory circuitry portion. In addition, the on-chip processor memory circuitry may include a third on-chip processor memory circuitry portion used to store intermediate and/or final input/output values associated with one or more layers included in the multi-layer neural network.
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公开(公告)号:US11251186B2
公开(公告)日:2022-02-15
申请号:US16827542
申请日:2020-03-23
Applicant: Intel Corporation
Inventor: Abhishek Sharma , Noriyuki Sato , Sarah Atanasov , Huseyin Ekin Sumbul , Gregory K. Chen , Phil Knag , Ram Krishnamurthy , Hui Jae Yoo , Van H. Le
IPC: G11C11/24 , H01L27/108 , H01L27/12 , G11C11/4096
Abstract: Examples herein relate to a memory device comprising an eDRAM memory cell, the eDRAM memory cell can include a write circuit formed at least partially over a storage cell and a read circuit formed at least partially under the storage cell; a compute near memory device bonded to the memory device; a processor; and an interface from the memory device to the processor. In some examples, circuitry is included to provide an output of the memory device to emulate output read rate of an SRAM memory device comprises one or more of: a controller, a multiplexer, or a register. Bonding of a surface of the memory device can be made to a compute near memory device or other circuitry. In some examples, a layer with read circuitry can be bonded to a layer with storage cells. Any layers can be bonded together using techniques described herein.
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公开(公告)号:US11016701B2
公开(公告)日:2021-05-25
申请号:US16146878
申请日:2018-09-28
Applicant: Intel Corporation
Inventor: Ian Young , Ram Krishnamurthy , Sasikanth Manipatruni , Amrita Mathuriya , Abhishek Sharma , Raghavan Kumar , Phil Knag , Huseyin Sumbul , Gregory Chen
Abstract: Techniques and mechanisms for a memory device to perform in-memory computing based on a logic state which is detected with a voltage-controlled oscillator (VCO). In an embodiment, a VCO circuit of the memory device receives from a memory array a first signal indicating a logic state that is based on one or more currently stored data bits. The VCO provides a conversion from the logic state being indicated by a voltage characteristic of the first signal to the logic state being indicated by a corresponding frequency characteristic of a cyclical signal. Based on the frequency characteristic, the logic state is identified and communicated for use in an in-memory computation at the memory device. In another embodiment, a result of the in-memory computation is written back to the memory array.
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公开(公告)号:US10884957B2
公开(公告)日:2021-01-05
申请号:US16160952
申请日:2018-10-15
Applicant: Intel Corporation
Inventor: Amrita Mathuriya , Sasikanth Manipatruni , Victor W. Lee , Abhishek Sharma , Huseyin E. Sumbul , Gregory Chen , Raghavan Kumar , Phil Knag , Ram Krishnamurthy , Ian Young
Abstract: Techniques and mechanisms for performing in-memory computations with circuitry having a pipeline architecture. In an embodiment, various stages of a pipeline each include a respective input interface and a respective output interface, distinct from said input interface, to couple to different respective circuitry. These stages each further include a respective array of memory cells and circuitry to perform operations based on data stored by said array. A result of one such in-memory computation may be communicated from one pipeline stage to a respective next pipeline stage for use in further in-memory computations. Control circuitry, interconnect circuitry, configuration circuitry or other logic of the pipeline precludes operation of the pipeline as a monolithic, general-purpose memory device. In other embodiments, stages of the pipeline each provide a different respective layer of a neural network.
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公开(公告)号:US10748603B2
公开(公告)日:2020-08-18
申请号:US16146473
申请日:2018-09-28
Applicant: Intel Corporation
Inventor: Huseyin Ekin Sumbul , Gregory K. Chen , Raghavan Kumar , Phil Knag , Abhishek Sharma , Sasikanth Manipatruni , Amrita Mathuriya , Ram Krishnamurthy , Ian A. Young
IPC: G11C8/00 , G11C11/418 , G06F9/30 , G11C11/419 , G11C13/00 , G11C7/10 , G11C11/54 , G06N3/063 , G06N3/08 , G11C7/18 , G06F7/544 , G11C11/16
Abstract: A memory circuit has compute-in-memory circuitry that enables a multiply-accumulate (MAC) operation based on shared charge. Row access circuitry drives multiple rows of a memory array to multiply a first data word with a second data word stored in the memory array. The row access circuitry drives the multiple rows based on the bit pattern of the first data word. Column access circuitry drives a column of the memory array when the rows are driven. Accessed rows discharge the column line in an accumulative fashion. Sensing circuitry can sense voltage on the column line. A processor in the memory circuit computes a MAC value based on the voltage sensed on the column.
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