公开(公告)号：US10243020B1

公开(公告)日：2019-03-26

申请号：US15799502

申请日：2017-10-31

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Lawrence A. Clevenger ,  Nicholas A. Lanzillo ,  Michael Rizzolo ,  Theodorus E. Standaert

IPC: H01L29/82 ,  H01L27/22 ,  H01L43/08 ,  G11C11/16 ,  H01L43/12 ,  H01L43/02

Abstract: A magnetic random access memory (MRAM) device includes a conductor disposed in an insulating material of a lower wiring layer, a magnetic tunnel junction (MTJ) structure formed in an upper wiring layer, and a landing pad formed in an intermediary wiring layer between the lower and upper wiring layers, the landing pad extending from a top surface of the conductor to a height above the intermediary wiring layer, wherein the landing pad connects the MJT structure to the conductor.

公开(公告)号：US20180269383A1

公开(公告)日：2018-09-20

申请号：US15972423

申请日：2018-05-07

Applicant: International Business Machines Corporation

Inventor： Benjamin D. Briggs ,  Lawrence A. Clevenger ,  Nicholas A. Lanzillo ,  Michael Rizzolo ,  Theodorus E. Standaert

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L23/58

Abstract: Techniques for preventing switching of spins in a magnetic tunnel junction by stray magnetic fields using a thin film magnetic shield are provided. In one aspect, a method of forming a magnetic tunnel junction includes: forming a stack on a substrate, having a first magnetic layer, a tunnel barrier, and a second magnetic layer; etching the stack to partially pattern the magnetic tunnel junction in the stack, wherein the etching includes patterning the magnetic tunnel junction through the second magnetic layer, the tunnel barrier, and partway through the first magnetic layer; depositing a first spacer and a magnetic shield film onto the partially patterned magnetic tunnel junction; etching back the magnetic shield film and first spacer; complete etching of the magnetic tunnel junction through the first magnetic layer to form a fully patterned magnetic tunnel junction; and depositing a second spacer onto the fully patterned magnetic tunnel junction.

公开(公告)号：US09985199B1

公开(公告)日：2018-05-29

申请号：US15459876

申请日：2017-03-15

Applicant: International Business Machines Corporation

Inventor： Benjamin D. Briggs ,  Lawrence A. Clevenger ,  Nicholas A. Lanzillo ,  Michael Rizzolo ,  Theodorus E. Standaert

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  H01L23/58 ,  H01L43/10

CPC classification number: H01L43/02 ,  H01L23/58 ,  H01L43/10 ,  H01L43/12

Abstract: Techniques for preventing switching of spins in a magnetic tunnel junction by stray magnetic fields using a thin film magnetic shield are provided. In one aspect, a method of forming a magnetic tunnel junction includes: forming a stack on a substrate, having a first magnetic layer, a tunnel barrier, and a second magnetic layer; etching the stack to partially pattern the magnetic tunnel junction in the stack, wherein the etching includes patterning the magnetic tunnel junction through the second magnetic layer, the tunnel barrier, and partway through the first magnetic layer; depositing a first spacer and a magnetic shield film onto the partially patterned magnetic tunnel junction; etching back the magnetic shield film and first spacer; complete etching of the magnetic tunnel junction through the first magnetic layer to form a fully patterned magnetic tunnel junction; and depositing a second spacer onto the fully patterned magnetic tunnel junction.