公开(公告)号：US20190393222A1

公开(公告)日：2019-12-26

申请号：US16013798

申请日：2018-06-20

Applicant: Intel Corporation

Inventor： Abhishek SHARMA ,  Yih WANG

IPC: H01L27/108 ,  H01L29/786

Abstract: Embodiments include a transistor device that comprises a gate electrode and a gate dielectric surrounding the gate electrode. In an embodiment, a source region may be below the gate electrode and a drain region may be above the gate electrode. In an embodiment, a channel region may be between the source region and the drain region. In an embodiment, the channel region is separated from a sidewall of the gate electrode by the gate dielectric. In an embodiment, a capacitor may be electrically coupled to the drain region.

公开(公告)号：US20190305136A1

公开(公告)日：2019-10-03

申请号：US15943584

申请日：2018-04-02

Applicant: Intel Corporation

Inventor： Sean MA ,  Abhishek SHARMA ,  Gilbert DEWEY ,  Jack T. KAVALIEROS ,  Van H. LE

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/49 ,  H01L27/12

Abstract: A transistor is described. The transistor includes a substrate, a first semiconductor structure above the substrate, a second semiconductor structure above the substrate, a source contact that includes a first metal structure that contacts a plurality of surfaces of the first semiconductor structure and a drain contact that includes a second metal structure that contacts a plurality of surfaces of the second semiconductor structure. The transistor also includes a gate below a back side of the substrate.

公开(公告)号：US20190304894A1

公开(公告)日：2019-10-03

申请号：US15942999

申请日：2018-04-02

Applicant: Intel Corporation

Inventor： Vincent DORGAN ,  Jeffrey HICKS ,  Miriam RESHOTKO ,  Abhishek SHARMA ,  Ilan TSAMERET

IPC: H01L23/50 ,  H01L23/48 ,  H01L29/51 ,  H01L23/498 ,  H01L21/82 ,  H01L23/522 ,  H01L23/525 ,  G11C17/16

Abstract: Embodiments herein may describe techniques for an integrated circuit including a metal interconnect above a substrate, an interlayer dielectric (ILD) layer above the metal interconnect with an opening to expose the metal interconnect at a bottom of the opening. A dielectric layer may conformally cover sidewalls and the bottom of the opening and in contact with the metal interconnect. An electrode may be formed within the opening, above the metal interconnect, and separated from the metal interconnect by the dielectric layer. After a programming voltage may be applied between the metal interconnect and the electrode to generate a current between the metal interconnect and the electrode, a conductive path may be formed through the dielectric layer to couple the metal interconnect and the electrode, changing the resistance between the metal interconnect and the electrode. Other embodiments may be described and/or claimed.

公开(公告)号：US20190065151A1

公开(公告)日：2019-02-28

申请号：US16145569

申请日：2018-09-28

Applicant: Intel Corporation

Inventor： Gregory K. CHEN ,  Raghavan KUMAR ,  Huseyin Ekin SUMBUL ,  Phil KNAG ,  Ram KRISHNAMURTHY ,  Sasikanth MANIPATRUNI ,  Amrita MATHURIYA ,  Abhishek SHARMA ,  Ian A. YOUNG

IPC: G06F7/544 ,  G06F9/30 ,  G06F7/501 ,  G06F17/16

Abstract: A memory device that includes a plurality subarrays of memory cells to store static weights and a plurality of digital full-adder circuits between subarrays of memory cells is provided. The digital full-adder circuit in the memory device eliminates the need to move data from a memory device to a processor to perform machine learning calculations. Rows of full-adder circuits are distributed between sub-arrays of memory cells to increase the effective memory bandwidth and reduce the time to perform matrix-vector multiplications in the memory device by performing bit-serial dot-product primitives in the form of accumulating m 1-bit x n-bit multiplications.

公开(公告)号：US20190042949A1

公开(公告)日：2019-02-07

申请号：US16147143

申请日：2018-09-28

Applicant: Intel Corporation

Inventor： Ian A. YOUNG ,  Ram KRISHNAMURTHY ,  Sasikanth MANIPATRUNI ,  Gregory K. CHEN ,  Amrita MATHURIYA ,  Abhishek SHARMA ,  Raghavan KUMAR ,  Phil KNAG ,  Huseyin Ekin SUMBUL

IPC: G06N3/10 ,  G06F17/50 ,  G06N3/063

Abstract: A semiconductor chip is described. The semiconductor chip includes a compute-in-memory (CIM) circuit to implement a neural network in hardware. The semiconductor chip also includes at least one output that presents samples of voltages generated at a node of the CIM circuit in response to a range of neural network input values applied to the CIM circuit to optimize the CIM circuit for the neural network.