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公开(公告)号：US6025981A
公开(公告)日：2000-02-15
申请号：US185522
申请日：1998-11-04
Applicant: James Wu
Inventor： James Wu
Abstract: A flexible voltage transient detector circuit is disclosed. The detector circuit includes an initialization unit, a first comparator, and a second comparator. The output of the initialization unit decides the operational modes of an integrated circuit. When the power voltage suddenly falls below the lower reference voltage, the first comparator will give an output to reset the initialization unit and force the integrated circuit into the initialized mode. Once the power voltage rises back above the higher reference voltage, the second comparator will order the counting of the initialization unit to start. The integrated circuit remains in the initialized mode until the counting stops after a period of delay time which can be flexibly set as needed and then returns the normal situation. This circuit design prevents the unpredictable operation of the integrated circuit.
Abstract translation: 公开了一种灵活的电压瞬变检测器电路。 检测器电路包括初始化单元，第一比较器和第二比较器。 初始化单元的输出决定了集成电路的工作模式。 当电源电压突然下降到低于参考电压以下时，第一个比较器将给出一个输出来复位初始化单元，并强制集成电路进入初始化模式。 一旦电源电压上升到高于参考电压的高电平，第二个比较器将命令启动初始化单元的计数。 集成电路保持在初始化模式，直到计数在延迟时间段之后停止，可以根据需要灵活设置，然后返回正常情况。 该电路设计可防止集成电路的不可预测的操作。
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32.发明授权Method to form capacitance node contacts with improved isolation in a DRAM process 有权在DRAM工艺中形成具有改进的隔离的电容节点触点的方法
公开(公告)号：US06020236A
公开(公告)日：2000-02-01
申请号：US257723
申请日：1999-02-25
Applicant: Yu-Hua Lee , James Wu , Wen-Chuan Chiang , Min-Hsiung Chiang
Inventor： Yu-Hua Lee , James Wu , Wen-Chuan Chiang , Min-Hsiung Chiang
IPC: H01L21/8242
CPC classification number: H01L27/10852
Abstract: A method to form capacitance node contacts with improved isolation in a DRAM process is described. An isolation layer is formed on a semiconductor substrate. A first contact hole is formed and filled with a polysilicon plug and the top surface of the isolation layer and of the polysilicon plug are polished to a planar surface. A first interpoly isolation layer is deposited. A stopping layer is deposited. A capping layer is deposited. A first polysilicon layer is deposited. The first polysilicon layer is etched to form features. A second interpoly isolation layer is deposited. The second interpoly isolation layer is planarized. The second contact hole is etched through the second interpoly isolation layer and the capping layer. The exposed first polysilicon material is etched back to the vertical sides of the second contact hole. The stopping layer and the first interpoly isolation layer are etched through to the top surface of the polysilicon plug. A lining layer of silicon nitride is deposited and etched to remain only on the vertical interior surfaces of the second contact hole. A second polysilicon layer is deposited to fill the second contact hole. The second polysilicon layer and the second interpoly isolation layer are planarized. The fabrication of the integrated circuit device is completed.
Abstract translation: 描述了在DRAM处理中形成具有改进的隔离的电容节点触点的方法。 在半导体衬底上形成隔离层。 形成第一接触孔并填充多晶硅插塞，并且隔离层和多晶硅插塞的顶表面被抛光到平坦表面。 沉积第一间隔隔离层。 沉积停止层。 沉积覆盖层。 沉积第一多晶硅层。 第一多晶硅层被蚀刻以形成特征。 沉积第二个互隔离层。 第二间隔隔离层被平坦化。 第二接触孔被蚀刻穿过第二多晶硅隔离层和封盖层。 暴露的第一多晶硅材料被回蚀刻到第二接触孔的垂直侧。 停止层和第一互隔离层被蚀刻到多晶硅插塞的顶表面。 沉积和蚀刻氮化硅的内衬层以仅保留在第二接触孔的垂直内表面上。 沉积第二多晶硅层以填充第二接触孔。 第二多晶硅层和第二多晶硅隔离层被平坦化。 完成集成电路器件的制造。
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公开(公告)号：US5854119A
公开(公告)日：1998-12-29
申请号：US058794
申请日：1998-04-13
Applicant: James Wu , Yu-Hua Lee , Jenn Ming Huang
Inventor： James Wu , Yu-Hua Lee , Jenn Ming Huang
IPC: H01L21/02 , H01L21/311 , H01L21/8242 , H01L21/20
CPC classification number: H01L27/10852 , H01L21/31116 , H01L28/40
Abstract: A method of forming a capacitor for DRAM or other circuits is described which avoids the problem of weak spots or gaps forming between a polysilicon contact plug and the first capacitor plate. A layer of first dielectric is formed on a substrate, A layer of second dielectric is formed on the layer of first dielectric. A layer of third dielectric is formed on the layer of second dielectric. A first hole is formed in the first, second, and third dielectrics exposing a contact region of the substrate. The first hole is then filled with a protective material and a second hole is formed in the layer of third dielectric using the layer of second dielectric as an etch stop. The first hole lies within the periphery of the second hole. The protective material prevents re-deposition of the third dielectric. The remaining protective material is then removed and a layer of conducting material is formed on the top surface of the layer of third dielectric, the sidewalls of the second hole, the sidewalls of the first hole, and the contact region of the substrate thereby forming a first capacitor plate.
Abstract translation: 描述了形成用于DRAM或其他电路的电容器的方法，其避免了在多晶硅接触插塞和第一电容器板之间形成的弱点或间隙的问题。 在基板上形成第一电介质层。在第一电介质层上形成第二电介质层。 在第二电介质层上形成第三电介质层。 在暴露基板的接触区域的第一，第二和第三电介质中形成第一孔。 然后用保护材料填充第一孔，并且使用第二电介质层作为蚀刻停止件在第三电介质层中形成第二孔。 第一个孔位于第二个孔的周围。 保护材料防止第三电介质的再沉积。 然后去除剩余的保护材料，并且在第三电介质层的顶表面，第二孔的侧壁，第一孔的侧壁和衬底的接触区域上形成导电材料层，从而形成 第一电容器板。
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公开(公告)号：US20070075541A1
公开(公告)日：2007-04-05
申请号：US11243339
申请日：2005-10-03
Applicant: James Wu
Inventor： James Wu
IPC: F16L27/00
CPC classification number: F16L27/0816 , E03C1/0409
Abstract: A connection assembly for showerheads includes a first part and a second part, wherein the first part includes a flange and a cylindrical portion which extends through the second part and a protrusion extends radially from the cylindrical portion and is rested on a distal end of the second part. The first part is connected with a hose and the second part is connected to showerhead. The second part is rotatably mounted to the first part between the protrusion and the flange. Therefore, the hose is not rotated with the rotation of the showerhead.
Abstract translation: 用于喷头的连接组件包括第一部分和第二部分，其中第一部分包括凸缘和延伸穿过第二部分的圆柱形部分，并且突出部从圆柱形部分径向延伸并且被放置在第二部分的远端上 部分。 第一部分与软管连接，第二部分连接到喷头。 第二部分可旋转地安装在突起和凸缘之间的第一部分上。 因此，软管不随喷头旋转而旋转。
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公开(公告)号：US20060273201A1
公开(公告)日：2006-12-07
申请号：US11146474
申请日：2005-06-07
Applicant: James Wu
Inventor： James Wu
IPC: A62C31/02
CPC classification number: B05B1/30 , A62C31/02 , B05B1/1654 , B05B1/18 , B05B3/04
Abstract: A shower head assembly includes a hollow handle and a head. A base plate is engaged with the head and a rotatable member is connected to the head and a fixed plate is secured to the rotatable member. Two tubular members are located between the fixed plate and the base plate. Two springs are received in two respective interiors of the two tubular members and biased between the fixed plate and the base plate. A pattern plate having a plurality of pattern holes is fixed to the rotatable member. A filtering assembly including a cap, an adjusting member with a plurality of ribs, a first filter, a separation ring with a plurality of holes and a second filter. A bolt extends through the filtering assembly and connecting the filtering assembly to the pattern plate. A volume control device is engaged with a connection hole defined through a wall of the handle so as to control water volume through the handle.
Abstract translation: 淋浴头组件包括中空手柄和头部。 基板与头部接合，并且可旋转构件连接到头部，并且固定板固定到可旋转构件。 两个管状构件位于固定板和基板之间。 两个弹簧被容纳在两个管状构件的两个相应的内部中并且在固定板和基板之间被偏置。 具有多个图案孔的图案板被固定到可旋转构件。 一种过滤组件，包括盖，具有多个肋的调节构件，第一过滤器，具有多个孔的分离环和第二过滤器。 螺栓延伸穿过过滤组件并将过滤组件连接到图案板。 音量控制装置与通过手柄的壁限定的连接孔接合，以便通过手柄控制水量。
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Patent Agency Ranking
公开(公告)号：USD516671S1
公开(公告)日：2006-03-07
申请号：US29213977
申请日：2004-09-24
Applicant: James Wu , Serafino Cropelli
Designer： James Wu , Serafino Cropelli
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公开(公告)号：US20050053832A1
公开(公告)日：2005-03-10
申请号：US10970323
申请日：2004-10-21
Applicant: Robert Ray , James Wu
Inventor： Robert Ray , James Wu
CPC classification number: H01M2/1276 , H01M2/0413 , H01M2/1229 , H01M2/1294
Abstract: A low profile collector and seal assembly for sealing the open end of a container of an electrochemical cell and providing venting of pressurized gases. An electrochemical cell has a can with a closed bottom end and an open top end, positive and negative electrodes disposed in the can, and a collector and seal assembly disposed in the open top end of the can for closing the open top end of the can. The collector and seal assembly includes a current collector and an annular seal that move relative to each other from a sealed position to a vented position when the internal cell pressure reaches a pressure threshold to vent pressurized gases.
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