摘要:
Mechanical resonating structures are described, as well as related devices and methods. The mechanical resonating structures may have a compensating structure for compensating temperature variations.
摘要:
Compensation of a signal using resonators as well as related methods and devices are described. Some embodiments include methods and devices for performing frequency compensation on a signal.
摘要:
Electro-mechanical oscillating devices designed to convert the frequency of electrical signal(s) and methods associated with the same are described. One example of such a frequency converting device is a mixer.
摘要:
A mechanical oscillator has components with dimensions in a sub-micron range to produce resonance mode oscillations in a gigahertz range. A major element is coupled to a minor, sub-micron element to produce large amplitude gigahertz frequency oscillation that is detected with readily available techniques. The mechanical structure can be formed according to a number of geometries including beams and rings and is excited with electrostatic, magnetic and thermal related forces, as well as other excitation techniques. The mechanical structure can be arranged in arrays for applications such as amplification and mixing and is less sensitive to shock and radiative environments than electrical or optical counterparts.
摘要:
Compensation of a signal using resonators as well as related methods and devices are described. Some embodiments include methods and devices for performing frequency compensation on a signal.
摘要:
A mechanical oscillator has components with dimensions in a sub-micron range to produce resonance mode oscillations in a gigahertz range. A major element is coupled to a minor, sub-micron element to produce large amplitude gigahertz frequency oscillation that is detected with readily available techniques. The mechanical structure can be formed according to a number of geometries including beams and rings and is excited with electrostatic, magnetic and thermal related forces, as well as other excitation techniques. The mechanical structure can be arranged in arrays for applications such as amplification and mixing and is less sensitive to shock and radiative environments than electrical or optical counterparts.
摘要:
An electromechanical resonating structure, including: first level major elements coupled to each other to form a second or higher level hierarchy; and first level sub-micron size minor elements with a characteristic frequency and coupled to each of the first level major elements to form a second level hierarchy in which a signal is effectively amplified by vibrating each of the plurality of major elements in at least one mode determined by the geometry and dimensions of the first level sub-micron minor elements.
摘要:
A memory device includes a mechanical element that exhibits distinct bistable states under amplitude modulation. The states are dynamically bistable or multi-stable with the application of a drive signal of a given frequency. The natural resonance of the element in conjunction with a hysteretic effect produces distinct states over a specific frequency range. Devices with multiple elements that respond to different frequency ranges provided on a common contact are formed with improved density. The devices may be excited and read with magnetomotive, capacitive, piezoelectric and/or optical methods. The devices may be planar oriented or out of plane oriented to permit three dimensional memory structures. DC biases may be used to shift frequency responses to permit an alternate method for differentiating states of the element.
摘要:
An electromechanical resonating structure, including: first level major elements coupled to each other to form a second or higher level hierarchy; and first level sub-micron size minor elements with a characteristic frequency and coupled to each of the first level major elements to form a second level hierarchy in which a signal is effectively amplified by vibrating each of the plurality of major elements in at least one mode determined by the geometry and dimensions of the first level sub-micron minor elements.
摘要:
A memory device includes a mechanical element that exhibits distinct bistable states under amplitude modulation. The states are dynamically bistable or multi-stable with the application of a drive signal of a given frequency. The natural resonance of the element in conjunction with a hysteretic effect produces distinct states over a specific frequency range. Devices with multiple elements that respond to different frequency ranges provided on a common contact are formed with improved density. The devices may be excited and read with magnetomotive, capacitive, piezoelectric and/or optical methods. The devices may be planar oriented or out of plane oriented to permit three dimensional memory structures. DC biases may be used to shift frequency responses to permit an alternate method for differentiating states of the element.