公开(公告)号：US20230361741A1

公开(公告)日：2023-11-09

申请号：US18353442

申请日：2023-07-17

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Masakazu FUKUMITSU ,  Yoshiyuki HIGUCHI

IPC: H03H3/007 ,  H03H9/24 ,  H03H9/02

CPC classification number: H03H3/0077 ,  H03H9/2447 ,  H03H9/02259

Abstract: A manufacturing method is provided for a resonance device that includes preparing a collective board including first power supply terminals electrically connected to upper electrodes of a plurality of resonators, and a first coupling wire that electrically connects two or more of the first power supply terminals. The method includes dividing the collective board into a plurality of resonance devices. Moreover, the first power supply terminals include a first metal layer and a second metal layer covering the first metal layer. The first coupling wire includes a portion of the first metal layer that extends from a region covered with the second metal layer. The method further includes removing the portion of the first metal layer extending from the region covered with the second metal layer before the dividing the collective board into the plurality of resonance devices.

公开(公告)号：US10020789B2

公开(公告)日：2018-07-10

申请号：US14840834

申请日：2015-08-31

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： James W. Adkisson ,  Panglijen Candra ,  Thomas J. Dunbar ,  Mark D. Jaffe ,  Anthony K. Stamper ,  Randy L. Wolf

IPC: H03H9/54 ,  H03H3/08 ,  H03H3/007 ,  H03H9/56 ,  H03H9/10 ,  H03H9/24 ,  G06F17/50 ,  H03H9/02 ,  H03H9/64 ,  H03H3/02 ,  H03H9/15

CPC classification number: H03H3/007 ,  G06F17/5063 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02007 ,  H03H9/02244 ,  H03H9/02992 ,  H03H9/1071 ,  H03H9/2447 ,  H03H9/2452 ,  H03H9/2457 ,  H03H9/2463 ,  H03H9/54 ,  H03H9/56 ,  H03H9/64 ,  H03H2003/022 ,  H03H2003/023 ,  H03H2003/027 ,  H03H2009/155 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

Abstract: Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam in which, upon actuation, the MEMS beam will turn on the at least one piezoelectric filter structure by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes.

公开(公告)号：US09985598B2

公开(公告)日：2018-05-29

申请号：US14728930

申请日：2015-06-02

Applicant: Robert Bosch GmbH

Inventor： Markus Lutz ,  Aaron Partridge

IPC: H03H3/007 ,  H03H9/24 ,  H03H9/02

CPC classification number: H03H3/0072 ,  H03H3/0076 ,  H03H3/0077 ,  H03H9/2447 ,  H03H9/2457 ,  H03H9/2463 ,  H03H2009/02299 ,  H03H2009/0233 ,  H03H2009/02496 ,  Y10T29/49016

Abstract: A continuous or distributed resonator geometry is defined such that the fabrication process used to form a spring mechanism also forms an effective mass of the resonator structure. Proportional design of the spring mechanism and/or mass element geometries in relation to the fabrication process allows for compensation of process-tolerance-induced fabrication variances. As a result, a resonator having increased frequency accuracy is achieved.

公开(公告)号：US09853679B2

公开(公告)日：2017-12-26

申请号：US15354110

申请日：2016-11-17

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Clark T.-C. Nguyen ,  Tristan O. Rocheleau ,  Thura Lin Naing

IPC: H04B1/38 ,  H04B1/40 ,  H03H9/24 ,  H03H9/25 ,  H04L27/12

CPC classification number: H04B1/40 ,  H03F3/45183 ,  H03F3/45659 ,  H03F2203/45428 ,  H03H9/2426 ,  H03H9/2431 ,  H03H9/2436 ,  H03H9/2447 ,  H03H9/25 ,  H04L27/10 ,  H04L27/12

Abstract: A radio frequency (RF) MEMS resonator is embedded in an active positive feedback loop to form a tunable RF channel-selecting radio transceiver employing a super-regenerative reception scheme. This transceiver harnesses the exceptionally high Q (around 100,000) and voltage-controlled frequency tuning of a resonator structure to enable selection of any one of among twenty 1 kHz wide RF channels over an 80 kHz range, while rejecting adjacent channels and consuming

公开(公告)号：US20130160550A1

公开(公告)日：2013-06-27

申请号：US13820756

申请日：2011-09-13

Applicant: Sebastien Hentz

Inventor： Sebastien Hentz

IPC: H03H9/24 ,  G01H17/00

CPC classification number: H03H9/02259 ,  G01H17/00 ,  H03H9/2405 ,  H03H9/2447 ,  H03H2009/0244 ,  H03H2009/02496

Abstract: A resonant device with piezoresistive detection includes a resonator connected elastically to the support of the device. The device includes: a support; a suspended resonator, which moves parallel to the plane of the support; means for actuating the resonator; and means for detecting the movement, including at least one piezoresistive gauge. The resonator is anchored to the support through at least one flexurally elastic element, to enable the threshold where a non-linear displacement regime appears to be raised. The device can be manufactured by a surface technology, and applies notably to resonant mass sensors.

Abstract translation: 具有压阻检测的谐振装置包括弹性地连接到装置的支撑件的谐振器。 该装置包括：支架; 悬挂的谐振器，其平行于支撑件的平面移动; 用于致动谐振器的装置; 以及用于检测运动的装置，包括至少一个压阻计。 谐振器通过至少一个弯曲弹性元件锚固到支撑件上，以实现出现非线性位移状态出现的阈值。 该装置可以通过表面技术制造，并且特别适用于谐振质量传感器。

公开(公告)号：US08453312B2

公开(公告)日：2013-06-04

申请号：US12164300

申请日：2008-06-30

Applicant: Ijaz H. Jafri ,  Jonathan L. Klein ,  Galen P. Magendanz

Inventor： Ijaz H. Jafri ,  Jonathan L. Klein ,  Galen P. Magendanz

IPC: H04R31/00 ,  H01L21/311

CPC classification number: B81C1/00142 ,  B81B2201/0271 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/051 ,  H03H3/0072 ,  H03H9/2447 ,  H03H9/462 ,  Y10T29/49005 ,  Y10T29/49128 ,  Y10T29/49155 ,  Y10T29/49156 ,  Y10T29/49826 ,  Y10T29/49861

Abstract: A method for fabrication of single crystal silicon micromechanical resonators using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, a capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; viewing windows are opened in the active layer of the resonator wafer; masking the single crystal silicon semiconductor material active layer of the resonator wafer with photoresist material; a single crystal silicon resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist material is subsequently dry stripped.

Abstract translation: 一种使用双晶片工艺制造单晶硅微机械谐振器的方法，包括绝缘体上硅（SOI）或绝缘基底和谐振器晶片，其中谐振器锚，电容气隙，隔离沟槽和对准标记 被微加工在基底晶片的有源层中; 谐振器晶片的有源层直接接合到基底晶片的有源层; 去除谐振器晶片的手柄和电介质层; 观察窗在谐振器晶片的有源层中打开; 用光致抗蚀剂材料掩蔽谐振晶片的单晶硅半导体材料有源层; 使用硅干蚀刻微加工技术在谐振器晶片的有源层中加工单晶硅谐振器; 随后将光致抗蚀剂材料干燥剥离。

公开(公告)号：US08324986B2

公开(公告)日：2012-12-04

申请号：US13040757

申请日：2011-03-04

Applicant: Markus Lutz ,  Zhiyu Pan ,  Aaron Partridge

Inventor： Markus Lutz ,  Zhiyu Pan ,  Aaron Partridge

IPC: H03H9/48 ,  H03H9/50 ,  H03H9/46 ,  H03H9/05 ,  H03H9/09

CPC classification number: H03B5/30 ,  H03H9/02259 ,  H03H9/02338 ,  H03H9/2405 ,  H03H9/2447 ,  H03H9/505 ,  H03H2009/0233 ,  H03H2009/02385 ,  H03H2009/0244 ,  H03H2009/02503

Abstract: A MEMS array structure including a plurality of bulk mode resonators may include at least one resonator coupling section disposed between the plurality of bulk mode resonators. The plurality of resonators may oscillate by expansion and/or contraction in at least one direction/dimension. The MEMS array structure may include a plurality of sense electrodes and drive electrodes spaced apart from the plurality of bulk mode resonators by a gap. Each of at least one of the plurality of bulk mode resonators may be mechanically coupled to a substrate via or approximately at a respective at least one nodal point.

Abstract translation: 包括多个体模式谐振器的MEMS阵列结构可以包括设置在多个体模式谐振器之间的至少一个谐振器耦合部分。 多个谐振器可以通过在至少一个方向/尺寸上的膨胀和/或收缩而振荡。 MEMS阵列结构可以包括多个感测电极和与多个体模式谐振器间隔开的间隙的驱动电极。 多个体模式谐振器中的至少一个可以经由或大致在相应的至少一个节点处机械耦合到衬底。

公开(公告)号：US20120274647A1

公开(公告)日：2012-11-01

申请号：US13094687

申请日：2011-04-26

Applicant: Je-Hsiung Lan ,  Sang-June Park ,  Jonghae Kim ,  Evgeni Gousev ,  Matthew Nowak ,  Philip J. Stephanou ,  Justin Black ,  Kurt Petersen ,  Srinivasan Ganapathi

Inventor： Je-Hsiung Lan ,  Sang-June Park ,  Jonghae Kim ,  Evgeni Gousev ,  Matthew Nowak ,  Philip J. Stephanou ,  Justin Black ,  Kurt Petersen ,  Srinivasan Ganapathi

IPC: H01L41/053 ,  G09G5/39 ,  H01L41/22 ,  G06T1/60

CPC classification number: H03H3/0072 ,  H03H9/2447 ,  Y10T29/42

Abstract: This disclosure provides implementations of electromechanical systems resonator structures, devices, apparatus, systems, and related processes. In one aspect, a sacrificial layer is deposited on an insulating substrate. A lower electrode layer is formed proximate the sacrificial layer. A piezoelectric layer is deposited on the lower electrode layer. An upper electrode layer is formed on the piezoelectric layer. At least a portion of the sacrificial layer is removed to define a cavity such that at least a portion of the lower electrode layer is spaced apart from the insulating substrate.

Abstract translation: 本公开提供了机电系统谐振器结构，设备，装置，系统和相关过程的实现。 在一个方面，牺牲层沉积在绝缘衬底上。 在牺牲层附近形成下电极层。 压电层沉积在下电极层上。 在压电层上形成上电极层。 去除牺牲层的至少一部分以限定空腔，使得下电极层的至少一部分与绝缘基板间隔开。

公开(公告)号：US08058952B2

公开(公告)日：2011-11-15

申请号：US12158986

申请日：2006-12-18

Applicant: Jozef T. M. Van Beek ,  Bart Van Velzen

Inventor： Jozef T. M. Van Beek ,  Bart Van Velzen

IPC: H03H9/24 ,  H03H9/125 ,  H03H3/007 ,  H03B5/30

CPC classification number: H03H9/02448 ,  H03H3/0072 ,  H03H9/2447 ,  H03H2009/02496 ,  Y10T29/42

Abstract: The invention relates to a MEMS resonator comprising a first electrode, a movable element (48) comprising a second electrode, the movable element (48) at least being movable towards the first electrode, the first electrode and the movable element (48) being separated by a gap (46, 47) having sidewalls. According to the invention, the MEMS resonator is characterized in that the gap (46, 47) has been provided with a dielectric layer (60) on at least one of the sidewalls.

Abstract translation: 本发明涉及一种MEMS谐振器，其包括第一电极，包括第二电极的可移动元件（48），所述可移动元件（48）至少可朝向所述第一电极移动，所述第一电极和所述可移动元件（48）被分离 通过具有侧壁的间隙（46,47）。 根据本发明，MEMS谐振器的特征在于间隙（46,47）在至少一个侧壁上设置有介电层（60）。

公开(公告)号：US20110199167A1

公开(公告)日：2011-08-18

申请号：US13040757

申请日：2011-03-04

Applicant: Markus LUTZ ,  Zhiyu PAN ,  Aaron PARTRIDGE

Inventor： Markus LUTZ ,  Zhiyu PAN ,  Aaron PARTRIDGE

IPC: H03H9/15

CPC classification number: H03B5/30 ,  H03H9/02259 ,  H03H9/02338 ,  H03H9/2405 ,  H03H9/2447 ,  H03H9/505 ,  H03H2009/0233 ,  H03H2009/02385 ,  H03H2009/0244 ,  H03H2009/02503

Abstract: Each one of resonators arranged in an N×M MEMS array structure includes substantially straight elongated beam sections connected by curved/rounded sections and is mechanically coupled to at least one adjacent resonator of the array via a coupling section, each elongated beam section connected to another elongated beam section at a distal end via the curved/rounded sections forming a geometric shape (e.g., a rounded square), and the coupling sections disposed between elongated beam sections of adjacent resonators. The resonators, when induced, oscillate at substantially the same frequency, in combined elongating/breathing and bending modes, i.e., beam sections exhibiting elongating/breathing-like and bending-like motions. One or more of the array structure's resonators may include one or more nodal points (i.e., that are substantially stationary and/or experience little movement), which are suitable and/or preferable locations to anchor the resonator/array to the substrate, in one or more areas of the structure's curved sections.

Abstract translation: 布置在N×M MEMS阵列结构中的每个谐振器包括通过弯曲/圆形部分连接的基本上直的细长梁段，并且经由耦合部分机械耦合到阵列的至少一个相邻谐振器，每个细长梁部分连接到另一个 通过形成几何形状（例如，圆形方形）的弯曲/圆形部分的远端处的细长梁部分，以及设置在相邻谐振器的细长梁部分之间的耦合部分。 谐振器在被诱导时以组合的延长/呼吸和弯曲模式即基本上相同的频率振荡，即表现出延长/呼吸状和弯曲状运动的梁部分。 一个或多个阵列结构的谐振器可以包括一个或多个节点（即基本上静止的和/或经历少量运动），这些点是合适的和/或优选的将谐振器/阵列锚定到衬底的位置，一个 或更多的结构的弯曲部分的区域。