RAILROAD TRACK CLEANING ASSEMBLIES AND APPARATUS
    33.
    发明申请
    RAILROAD TRACK CLEANING ASSEMBLIES AND APPARATUS 有权
    铁路轨道清洁装配和装置

    公开(公告)号:US20120222580A1

    公开(公告)日:2012-09-06

    申请号:US13224686

    申请日:2011-09-02

    CPC classification number: E01H8/06

    Abstract: Railroad track cleaning assemblies and apparatus are described. An example railroad track cleaning assembly includes a movable carriage movably coupled to a frame to which a plurality of wheels are operably coupled to enable the frame to move on railroad tracks. Additionally, the railroad track assembly includes a shaft rotatably coupled to the movably carriage to receive one or more brushes that are to be rotated and engage one of the railroad tracks and a spring assembly coupled to the movable carriage and to the frame to bias, via the movable carriage, the one or more brushes into engagement with the one of the railroad tracks.

    Abstract translation: 描述了铁路清洁组件和装置。 示例性的铁轨清洁组件包括可移动地联接到框架的可移动托架,多个车轮可操作地联接到框架,以使得框架能够在铁路轨道上移动。 此外,铁路轨道组件包括可旋转地联接到可移动滑架的轴,以接收要旋转并接合一个铁轨的一个或多个电刷,以及联接到可移动滑架和框架的弹簧组件以经由 可移动的托架,一个或多个刷子与铁路轨道中的一个接合。

    RECESSED GATE SILICON-ON-INSULATOR FLOATING BODY DEVICE WITH SELF-ALIGNED LATERAL ISOLATION
    36.
    发明申请
    RECESSED GATE SILICON-ON-INSULATOR FLOATING BODY DEVICE WITH SELF-ALIGNED LATERAL ISOLATION 有权
    具有自对准横向隔离的绝缘栅绝缘体浮动体装置

    公开(公告)号:US20110223726A1

    公开(公告)日:2011-09-15

    申请号:US13113839

    申请日:2011-05-23

    Applicant: John Kim

    Inventor: John Kim

    Abstract: Embodiments of a manufacturing process for recessed gate devices on silicon-on-insulator (SOI) substrate with self-aligned lateral isolation are described. This allows the creation of true in-pitch recessed gate devices without requiring an extra isolation dimension. A lateral isolation trench is formed between pairs of recessed gate devices by etching the silicon-on-insulator area down to a buried oxide layer on which the silicon-on-insulator layer is formed. The position of the trench is self-aligned and defined by the gate width and the dimension of spacers disposed on either side of the gate. The isolation trench is filled with a dielectric material and then etched back to the middle of the SOI body and the remaining volume is filled with a doped conductive material. The doped conductor is subject to a thermal cycle to create source and drain regions of the device through out-diffusion of the doped material.

    Abstract translation: 描述了具有自对准横向隔离的绝缘体上硅(SOI)衬底上的凹陷栅极器件的制造工艺的实施例。 这允许创建真正的间距凹凸栅极器件,而不需要额外的隔离尺寸。 通过将绝缘体上的硅蚀刻到其上形成有绝缘体上硅层的掩埋氧化物层,在一对凹陷栅极器件之间形成横向隔离沟槽。 沟槽的位置是自对准的并且由栅极宽度和设置在栅极两侧的间隔物的尺寸限定。 隔离沟槽填充有电介质材料,然后回蚀到SOI体的中间,剩余的体积用掺杂的导电材料填充。 掺杂导体经受热循环,以通过掺杂材料的扩散来形成器件的源极和漏极区域。

    Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
    37.
    发明授权
    Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation 有权
    具有自对准横向隔离的嵌入式绝缘体上硅绝缘体浮体器件

    公开(公告)号:US07947543B2

    公开(公告)日:2011-05-24

    申请号:US12567202

    申请日:2009-09-25

    Applicant: John Kim

    Inventor: John Kim

    Abstract: Embodiments of a manufacturing process for recessed gate devices on silicon-on-insulator (SOI) substrate with self-aligned lateral isolation are described. This allows the creation of true in-pitch recessed gate devices without requiring an extra isolation dimension. A lateral isolation trench is formed between pairs of recessed gate devices by etching the silicon-on-insulator area down to a buried oxide layer on which the silicon-on-insulator layer is formed. The position of the trench is self-aligned and defined by the gate width and the dimension of spacers disposed on either side of the gate. The isolation trench is filled with a dielectric material and then etched back to the middle of the SOI body and the remaining volume is filled with a doped conductive material. The doped conductor is subject to a thermal cycle to create source and drain regions of the device through out-diffusion of the doped material.

    Abstract translation: 描述了具有自对准横向隔离的绝缘体上硅(SOI)衬底上的凹陷栅极器件的制造工艺的实施例。 这允许创建真正的间距凹凸栅极器件,而不需要额外的隔离尺寸。 通过将绝缘体上的硅蚀刻到其上形成有绝缘体上硅层的掩埋氧化物层,在一对凹陷栅极器件之间形成横向隔离沟槽。 沟槽的位置是自对准的并且由栅极宽度和设置在栅极两侧的间隔物的尺寸限定。 隔离沟槽填充有电介质材料,然后回蚀到SOI体的中间,剩余的体积用掺杂的导电材料填充。 掺杂导体经受热循环,以通过掺杂材料的扩散来形成器件的源极和漏极区域。

    METHOD FOR PROVIDING PROGRESSIVE DOWNLOAD SERVICE FOR PLAYBACK APPARATUS SUPPORTING BD-J SPECIFICATION
    38.
    发明申请
    METHOD FOR PROVIDING PROGRESSIVE DOWNLOAD SERVICE FOR PLAYBACK APPARATUS SUPPORTING BD-J SPECIFICATION 有权
    提供支持BD-J规范的播放设备的逐步下载服务的方法

    公开(公告)号:US20110069935A1

    公开(公告)日:2011-03-24

    申请号:US12882665

    申请日:2010-09-15

    Abstract: A method for providing a progressive download service for a playback apparatus supporting a BD-J specification is disclosed. In accordance with the present invention, a standby time and a communication overhead necessary for receiving and playing a A/V data by a playback apparatus supporting a BD-J specification are minimized by dividing and playing a first clip and a second clip according to a size of clips.

    Abstract translation: 公开了一种用于为支持BD-J规范的播放装置提供逐行下载服务的方法。 根据本发明,由支持BD-J规范的播放装置接收和播放A / V数据所需的待机时间和通信开销通过根据本发明的一个部分划分和播放第一剪辑和第二剪辑而被最小化 剪辑大小

    Method for managing java applications
    39.
    发明申请
    Method for managing java applications 有权
    java应用程序的管理方法

    公开(公告)号:US20100218189A1

    公开(公告)日:2010-08-26

    申请号:US12656872

    申请日:2010-02-18

    CPC classification number: G06F9/445

    Abstract: The present invention relates to a method for managing java applications executable in a user device. The present invention provides an expandability for and a continuity between java applications by changing states of the java applications in execution and sharing information between the java applications.

    Abstract translation: 本发明涉及一种用于管理可在用户设备中执行的Java应用程序的方法。 本发明通过改变执行中的Java应用程序的状态和在java应用程序之间共享信息来提供java应用程序的可扩展性和连续性。

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