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    Methods of eliminating pattern collapse on photoresist patterns
    36.
    发明授权
    Methods of eliminating pattern collapse on photoresist patterns 失效
    消除光刻胶图案上的图案崩溃的方法

    公开(公告)号：US07687406B2

    公开(公告)日：2010-03-30

    申请号：US11487403

    申请日：2006-07-17

    申请人： Jon Daley ,  Yoshiki Hishiro

    发明人： Jon Daley ,  Yoshiki Hishiro

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/0335 ,  G03F7/40

    摘要： A stabilizing solution for treating photoresist patterns and methods of preventing profile abnormalities, toppling and resist footing are disclosed. The stabilizing solution comprises a non-volatile component, such as non-volatile particles or polymers, which is applied after the photoresist material has been developed. By treating the photoresist with the solution containing a non-volatile component after developing but before drying, the non-volatile component fills the space between adjacent resist patterns and remains on the substrate during drying. The non-volatile component provides structural and mechanical support for the resist to prevent deformation or collapse by liquid surface tension forces.

    摘要翻译： 公开了一种用于处理光致抗蚀剂图案的稳定溶液以及防止轮廓异常，倾倒和抵抗基脚的方法。 稳定溶液包含非挥发性组分，例如在光致抗蚀剂材料已经显影之后施加的非挥发性颗粒或聚合物。 通过在显影之后但干燥之前用含有非挥发性成分的溶液处理光致抗蚀剂，非挥发性组分填充相邻抗蚀剂图案之间的空间，并在干燥期间保留在基材上。 非挥发性组分为抗蚀剂提供结构和机械支撑，以防止液体表面张力产生变形或塌陷。

    Method and apparatus for increasing depth of field for an imager
    37.
    发明申请
    Method and apparatus for increasing depth of field for an imager 有权
    用于增加成像器的景深的方法和装置

    公开(公告)号：US20080013941A1

    公开(公告)日：2008-01-17

    申请号：US11486069

    申请日：2006-07-14

    申请人： Jon Daley

    发明人： Jon Daley

    IPC分类号： G03B13/34 ,  G03B3/10

    CPC分类号： H04N5/23212 ,  G02B7/38 ,  G02B27/0075 ,  G06T5/003 ,  G06T5/50 ,  G06T2207/20221 ,  H04N5/23232 ,  H04N5/2356

    摘要： An imaging method and apparatus is disclosed which improves the depth of field of an image by, in one exemplary embodiment, capturing a plurality of images at respective different focus positions, and combines the images into one image and sharpens the one image. In an alternative exemplary embodiment, a single image is captured while the focus positions change during image capture, and the resulting image is sharpened.

    摘要翻译： 公开了一种成像方法和装置，其通过在一个示例性实施例中在各个不同的焦点位置捕获多个图像，并将所述图像组合成一个图像并且对所述一个图像进行锐化来改善图像的景深。 在替代示例性实施例中，在图像捕获期间聚焦位置改变时捕获单个图像，并且所得图像被锐化。

    Memory array for increased bit density and method of forming the same
    39.
    发明申请
    Memory array for increased bit density and method of forming the same 有权
    用于增加位密度的存储器阵列及其形成方法

    公开(公告)号：US20060237707A1

    公开(公告)日：2006-10-26

    申请号：US11111836

    申请日：2005-04-22

    申请人： Jon Daley

    发明人： Jon Daley

    IPC分类号： H01L29/04

    CPC分类号： H01L27/24

    摘要： A memory array having a plurality of resistance variable memory units and method for forming the same are provided. Each memory unit includes a first electrode, a resistance variable material over the first electrode, and a first second-electrode over the resistance variable material. The first second-electrode is associated with the first electrode to define a first memory element. Each memory unit further includes a second second-electrode over the resistance variable material. The second-second electrode is associated with the first electrode to define a second memory element.

    摘要翻译： 提供具有多个电阻可变存储单元的存储器阵列及其形成方法。 每个存储单元包括第一电极，位于第一电极上方的电阻变化材料和电阻变化材料上的第一第二电极。 第一第二电极与第一电极相关联以限定第一存储元件。 每个存储器单元还包括位于电阻变化材料上的第二个第二电极。 第二第二电极与第一电极相关联以限定第二存储元件。

    Methods of eliminating pattern collapse on photoresist patterns
    40.
    发明授权
    Methods of eliminating pattern collapse on photoresist patterns 有权

    公开(公告)号：US07119025B2

    公开(公告)日：2006-10-10

    申请号：US10819936

    申请日：2004-04-08

    申请人： Jon Daley ,  Yoshiki Hishiro

    发明人： Jon Daley ,  Yoshiki Hishiro

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/0335 ,  G03F7/40

    摘要： A stabilizing solution for treating photoresist patterns and methods of preventing profile abnormalities, toppling and resist footing are disclosed. The stabilizing solution comprises a non-volatile component, such as non-volatile particles or polymers, which is applied after the photoresist material has been developed. By treating the photoresist with the solution containing a non-volatile component after developing but before drying, the non-volatile component fills the space between adjacent resist patterns and remains on the substrate during drying. The non-volatile component provides structural and mechanical support for the resist to prevent deformation or collapse by liquid surface tension forces.