ULTRA-SENSITIVE SILICON SENSOR, LONG-WAVE INFRARED MICROANTENNA
    32.
    发明申请
    ULTRA-SENSITIVE SILICON SENSOR, LONG-WAVE INFRARED MICROANTENNA 有权
    超声感应硅传感器,长波红外线微波

    公开(公告)号:US20080224045A1

    公开(公告)日:2008-09-18

    申请号:US11521544

    申请日:2006-09-15

    IPC分类号: G01J5/20

    摘要: Hybrid microantennas and improved sensor structures incorporating hybrid microantenna embodiments are described herein. A hybrid long-wave infrared (LWIR) microantenna includes four inner pie-shaped arms in which the four inner pie-shaped arms are in a double bow-tie configuration and a plurality of outer pie-shaped arms in which a subset of the outer pie-shaped arms is connected to the four inner pie-shaped arms and the pie-shaped arms are sensitive to electric fields and absorb radiation.

    摘要翻译: 本文描述了混合微型天线和结合混合微型天线实施例的改进的传感器结构。 混合长波红外(LWIR)微型天线包括四个内部饼形臂,其中四个内部饼形臂处于双弓形结构和多个外部饼形臂,其中外部 饼形臂连接到四个内部饼形臂,并且饼形臂对电场敏感并吸收辐射。

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    33.
    发明申请
    "I" beam bridge interconnection for ultra-sensitive silicon sensor 有权
    “I”梁桥互连用于超灵敏硅传感器

    公开(公告)号:US20070131861A1

    公开(公告)日:2007-06-14

    申请号:US11302229

    申请日:2005-12-14

    IPC分类号: G01J5/00

    CPC分类号: G01J5/20

    摘要: A bolometer type focal plane is made up of a plurality of silicon sensors. Within each sensor, interconnection between co-planar stages is provided by elongated “I” beam type bridge members having a generally rectangular cross-section including unequal wider (height) and narrower (width) dimensions, and wherein the bridge members are oriented such that the narrower width dimension is in the direction of the common plane and the wider height dimension is perpendicular to the common plane. A sensor with these bridges accommodates stress/strain by rotation while preventing out-of-plane deflection and deformation.

    摘要翻译: 测辐射热计型焦平面由多个硅传感器组成。 在每个传感器内,共平面级之间的互连通过具有大致矩形横截面的细长的“I”梁型桥梁构件提供,其包括不相等的较宽(高度)和较窄(宽度)的尺寸,并且其中桥构件定向成使得 较窄的宽度尺寸在公共平面的方向上,较宽的高度尺寸垂直于公共平面。 具有这些桥的传感器通过旋转来适应应力/应变,同时防止面外偏转和变形。

    Ultra sensitive silicon sensor readout circuitry
    34.
    发明授权
    Ultra sensitive silicon sensor readout circuitry 失效
    超灵敏的硅传感器读出电路

    公开(公告)号:US07157708B2

    公开(公告)日:2007-01-02

    申请号:US11239297

    申请日:2005-09-30

    申请人: Nathan Bluzer

    发明人: Nathan Bluzer

    IPC分类号: G01J5/00

    摘要: A readout circuit for a bolometer type sensor including a pair of back-to-back temperature sensing diodes connected in an electro-thermal feedback loop including a semiconductor amplifier circuit located in an intermediate stage between a detector stage and a heat bath stage and wherein the heat generated by the amplifier equalizes the temperature between the intermediate stage and the detector stage. The readout circuitry also includes circuitry for removing local threshold voltage variations and low frequency 1/f noise components in the readout signal while providing high temperature sensitivity and relatively high voltage gain.

    摘要翻译: 一种用于测辐射热量传感器的读出电路,包括连接在电热反馈回路中的一对背对背温度感测二极管,该电热反馈回路包括位于检测器级和热浴级之间的中间级的半导体放大器电路, 由放大器产生的热量使中间级与检测级之间的温度相等。 读出电路还包括用于去除读出信号中的局部阈值电压变化和低频1 / f噪声分量的电路,同时提供高温度灵敏度和相对较高的电压增益。

    Sensitive silicon sensor and test structure for an ultra-sensitive silicon sensor
    35.
    发明申请
    Sensitive silicon sensor and test structure for an ultra-sensitive silicon sensor 失效
    敏感硅传感器和超灵敏硅传感器的测试结构

    公开(公告)号:US20060081781A1

    公开(公告)日:2006-04-20

    申请号:US11240772

    申请日:2005-10-03

    申请人: Nathan Bluzer

    发明人: Nathan Bluzer

    IPC分类号: G01J5/56

    摘要: A thermal radiation sensor is disclosed wherein a semiconductor thermocouple comprised of a pair of silicon diodes is connected in back-to-back relationship, with one of the diodes being located in a detector stage. The other diode is located in a heat bath stage together with a sensed temperature difference amplifier. The detector stage is thermally isolated from the heat bath stage by a low thermal conductivity link that includes electrical wires which connect the back-to-back diodes to the amplifier.

    摘要翻译: 公开了一种热辐射传感器,其中由一对硅二极管组成的半导体热电偶以背对背的关系连接,其中一个二极管位于检测器级中。 另一个二极管与感测到的温差放大器一起位于热浴台中。 检测器级通过低导热性链路与热浴级热隔离,该链路包括将背对背二极管连接到放大器的电线。

    Ultra sensitive silicon sensor readout circuitry
    36.
    发明申请
    Ultra sensitive silicon sensor readout circuitry 失效
    超灵敏的硅传感器读出电路

    公开(公告)号:US20060081780A1

    公开(公告)日:2006-04-20

    申请号:US11239297

    申请日:2005-09-30

    申请人: Nathan Bluzer

    发明人: Nathan Bluzer

    IPC分类号: G01J5/00

    摘要: A readout circuit for a bolometer type sensor including a pair of back-to-back temperature sensing diodes connected in an electro-thermal feedback loop including a semiconductor amplifier circuit located in an intermediate stage between a detector stage and a heat bath stage and wherein the heat generated by the amplifier equalizes the temperature between the intermediate stage and the detector stage. The readout circuitry also includes circuitry for removing local threshold voltage variations and low frequency 1/f noise components in the readout signal while providing high temperature sensitivity and relatively high voltage gain.

    摘要翻译: 一种用于测辐射热量传感器的读出电路,包括连接在电热反馈回路中的一对背对背温度感测二极管,该电热反馈回路包括位于检测器级和热浴级之间的中间级的半导体放大器电路, 由放大器产生的热量使中间级与检测级之间的温度相等。 读出电路还包括用于去除读出信号中的局部阈值电压变化和低频1 / f噪声分量的电路,同时提供高温度灵敏度和相对较高的电压增益。

    Low noise field effect transistor
    37.
    发明申请
    Low noise field effect transistor 有权
    低噪声场效应晶体管

    公开(公告)号:US20060071249A1

    公开(公告)日:2006-04-06

    申请号:US11240471

    申请日:2005-10-03

    IPC分类号: H01L29/76

    摘要: An FET (field effect transistor) having source, drain and channel regions of a conductivity type in a semiconductor body of opposite conductivity type. The channel region is located at the lower extremity of the source and drain regions so as to be spaced from the surface of the semiconductor body by a distance d.

    摘要翻译: 具有导电类型的源极,漏极和沟道区的FET(场效应晶体管)在相反导电类型的半导体本体中。 沟道区位于源极和漏极区的下端,以便与半导体本体的表面间隔距离d。

    Microelectromechanical RF switch
    38.
    发明授权
    Microelectromechanical RF switch 有权
    微机电RF开关

    公开(公告)号:US06639494B1

    公开(公告)日:2003-10-28

    申请号:US10321562

    申请日:2002-12-18

    申请人: Nathan Bluzer

    发明人: Nathan Bluzer

    IPC分类号: H01H5700

    摘要: A MEMS switch with a bridge having three symmetric arms each having one end connected to a support arrangement and another end integral with a common central bridge portion. First and second conductors are deposited on a substrate, with the first conductor having an end with an open area which encompasses a pull down electrode which is also on the substrate, and of a height less than that of the conductor. A control voltage applied to the pull down electrode causes downward movement of the bridge, to present a relatively low impedance, thereby allowing a signal to propagate between the first and second conductors, without the bridge touching the pull down electrode. Each of the arms is slotted to reduce curl-induced stiffness.

    摘要翻译: 具有三个对称臂的桥的MEMS开关,每个臂具有连接到支撑装置的一端和与公共中心桥接部分成一体的另一端。 第一和第二导体沉积在衬底上,其中第一导体具有开口区域的端部,该开口区域也包围也在衬底上的下拉电极,并且具有比导体的高度的高度。 施加到下拉电极的控制电压引起桥的向下移动,以呈现相对低的阻抗,从而允许信号在第一和第二导体之间传播,而桥不接触下拉电极。 每个臂都开槽以减少卷曲引起的刚度。

    Multispectral superconductive quantum detector
    39.
    发明授权
    Multispectral superconductive quantum detector 失效
    多光谱超导量子检测器

    公开(公告)号:US5179072A

    公开(公告)日:1993-01-12

    申请号:US624784

    申请日:1990-12-10

    申请人: Nathan Bluzer

    发明人: Nathan Bluzer

    IPC分类号: H01L39/10

    CPC分类号: H01L39/10

    摘要: A multispectural superconductive quantum radiant energy detector and related method utilizing a closed loop of superconductive material having spaced legs, one of which is disposed to ambient. The superconductivity current is divided in the first and second legs according to geometric and kinetic inductances. A ground plane is provided for minimizing the geometric inductance with the loop during injection and removal of the current.

    摘要翻译: 一种多光谱超导量子辐射能量检测器和相关方法,利用具有间隔的腿的超导材料的闭环,其中一根被设置为环境。 超导电流根据几何和动力学电感分为第一和第二腿。 提供接地平面,用于在注入和去除电流期间使环路的几何感应最小化。

    High resistance optical shield for visible sensors
    40.
    发明授权
    High resistance optical shield for visible sensors 失效
    高电阻光屏蔽可见传感器

    公开(公告)号:US4941029A

    公开(公告)日:1990-07-10

    申请号:US706436

    申请日:1985-02-27

    申请人: Nathan Bluzer

    发明人: Nathan Bluzer

    CPC分类号: H01L27/14818

    摘要: An improved light shield for selectively shielding selected light sensitive elements in a visible sensor semiconductor device from incident light comprising a layer of high resistance semiconductor material carried upon the surface of the semiconductor substrate. The high resistance semiconductor material is selected to have a band gap narrower than the silicon semiconductor material it is shielding in order to substantially absorb light which would otherwise fall upon the shielded photosensitive elements.

    摘要翻译: 一种改进的遮光罩,用于选择性地屏蔽可见光传感器半导体器件中的选定的光敏元件,所述入射光包括承载在半导体衬底表面上的高电阻半导体材料层。 高电阻半导体材料被选择为具有窄于其屏蔽的硅半导体材料的带隙,以便基本上吸收否则将落在屏蔽的感光元件上的光。