摘要:
An SOI field effect transistor is provided comprising a body contact that is isolated by a shallow trench that is formed into the body portion of the transistor, thereby eliminating any increase in gate capacitance or delay. A method of forming such a transistor is provided that does not require any additional process steps.
摘要:
The present invention relates to storage devices and in particular, it relates to a method for testing the storage quality of history dependent memory array cells. A cell can be stressed selectively with predetermined test conditions such that these test conditions cover all of the hardware status distribution which might arise when the cell is operated under the full range of operating conditions. This is basically achieved by cutting off a predetermined cutoff width of the trailing edge of the active wordline select pulse.
摘要:
A method and system for maintaining Static Random Access Memory (SRAM) functionality while simultaneously screening for leakage paths from bitline to ground during Float Mode operation. The SRAM configuration enables SRAM cell selection for a read or write operation. In response to the SRAM cell selection, a group of pre-charge (PCHG) signals are provided with a high value. When selection is made from a top sub-group of SRAM cells, a corresponding bitline, “BLT_TOP”, takes a value which reflects a state stored in the selected cell. In addition, the bitline corresponding to the bottom sub-group of cells, “BLT_BOT”, takes a high value. If there is a leakage defect, BLT_BOT drops to a low value. With no leakage defect, the data stored in the selected cell is determined based on the result of a logical NAND operation including the respective states indicated by the BLT_TOP and by the BLT_BOT.
摘要:
A circuit and method includes first circuits powered by a first supply voltage and second circuits powered by a second supply voltage. A level shifter is coupled between the first circuits and the second circuits. The level shifter is configured to select a supply voltage output for a circuit including one of the first supply voltage and the second supply voltage in accordance an input signal, where the input signal depends on at least one of an operation to be performed and component performing the operation.
摘要:
According to the present invention an automated method is provided for routing and designing an LSI (Large Scale Integrated Circuit). First, at least one generic of an instance of a book to be connected is located on the chip, wherein a generic of an instance is an area defined according to the measurements of said instance. Then, an initial route to said instance is generated by optimizing the route to the corresponding generic according to given design rules. Thereby, an optimized pin location is determined for said instance. Then, on the basis of said optimized pin location a layout for said instance is generated in place of the corresponding generic. Finally, the actually generated pin is connected with the corresponding end of the initial route.
摘要:
A method and a device for decoding an address word into word-line signals. A plurality of address lines feed the address word into a plurality of decoding blocks each associated to a particular address in the address space formed by the address word for generating a respective word-line signals, whereby each of the decoding blocks is connected to the plurality of address lines. At least one decoding block associated to a predetermined address in the address space formed by the address word is omitted, so that none of the generated word lines is switched to the active state, whenever the predetermined address word is inputted over the plurality of address lines.
摘要:
A method and a device for decoding an address word into word-line signals. A plurality of address lines feed the address word into a plurality of decoding blocks each associated to a particular address in the address space formed by the address word for generating a respective word-line signals, whereby each of the decoding blocks is connected to the plurality of address lines. At least one decoding block associated to a predetermined address in the address space formed by the address word is omitted, so that none of the generated word lines is switched to the active state, whenever the predetermined address word is inputted over the plurality of address lines.
摘要:
A receiving latch with hysteresis circuit for receiving data on cross chip boundaries in a chip to chip interface has a clock section and a feed section and a hysteresis latch section with the feed section receiver enable input pin for a dataline passing through the receiver feed section and hysteresis latch section. The receiver enable input pin D is settable to a high or low voltage level, respectively turning the hysteresis latch section on said dataline ON or OFF. The hysteresis latch pass gate has clock couplings to the pgate and ngate of the PFET and NFET transistors of the pass gate. The drains of said pass gate PFET and NFET are coupled to ground and their sources to a positive potential provided over said data line. The drain of a latch PFET has its source connected to a positive potential and the source of an latch NFET has having its drain connected to ground and both the latch PFET and NFET have their gate connection to the dataline latch output for gating the dataline information out of the latch from the latch gates of the hysteresis latch section.
摘要:
A read circuit for semiconductor storage cells (10, 50) including dual read bitlines (23, 24, 51, 52) driven by the cell to full ‘zero’ signals and ‘weak one’ signals comprises a read head circuit (53) which includes an inverter (56) in one of the bitlines (52). The inverter serves to turn a ‘weak one’ signal to a full ‘zero’ signal. A bit select circuit is integrated into the read head circuit (53) and connects the output of the inverter and the other one of the bitlines (51) through bit select switches (57, 58) to the single line output (XT1) of the read head circuit (53).
摘要:
A circuit and method includes first circuits powered by a first supply voltage and second circuits powered by a second supply voltage. A level shifter is coupled between the first circuits and the second circuits. The level shifter is configured to select a supply voltage output for a circuit including one of the first supply voltage and the second supply voltage in accordance an input signal, where the input signal depends on at least one of an operation to be performed and component performing the operation.