Microwave discharge light source device
    31.
    发明授权
    Microwave discharge light source device 失效
    微波放电光源设备

    公开(公告)号:US5144199A

    公开(公告)日:1992-09-01

    申请号:US637636

    申请日:1991-01-04

    IPC分类号: C23C16/48 H01J65/04

    CPC分类号: H01J65/044 C23C16/482

    摘要: A microwave discharge light source device in which one side of a discharge space in which a plasma emission takes place is defined by a transparent dielectric member. A transparent microwave reflecting member is disposed in a position such as to face the discharge space through the dielectric member. A microwave having an electric field component in the direction of thickness of the dielectric member is introduced into the dielectric member through the coupling at an end surface of the dielectric member so that a microwave electric field is formed in the discharge space, and so that the plasma emission medium emits light by electric discharge. The light thus emitted is extracted through the transparent microwave reflecting member.

    摘要翻译: 其中发生等离子体发射的放电空间的一侧由透明电介质构件限定的微波放电光源装置。 透明微波反射部件设置在通过电介质部件与放电空间相对的位置。 具有电介质部件厚度方向的电场成分的微波通过电介质部件的端面的耦合引入电介质部件,使得在放电空间内形成微波电场, 等离子体发射介质通过放电发光。 通过透明微波反射部件提取发出的光。

    Thin film forming apparatus having a gas flow settling device
    33.
    发明授权
    Thin film forming apparatus having a gas flow settling device 失效
    具有气流稳定装置的薄膜形成装置

    公开(公告)号:US5024182A

    公开(公告)日:1991-06-18

    申请号:US376015

    申请日:1989-07-06

    摘要: An apparatus for forming a thin film on a substrate by bringing a first gas and a second gas into reaction with each other in a reaction chamber near the surface of the substrate in the reaction chamber. The apparatus has a plasma generating chamber disposed adjacent to the reaction chamber for generating a plasma of the first gas in a predetermined direction. A first gas inlet is provided at the boundary between the plasma generating chamber and the reaction chamber and formed to extend in the predetermined direction, while a second gas inlet is provided in the vicinity of the first gas inlet and extended in the predetermined direction. The apparatus further has a first gas supplying device for introducing the first gas into the plasma generating chamber and for introducing the first gas activated by a plasma in the plasma generating chamber into the reaction chamber through the first gas inlet, and second gas supplying device for supplying the second gas into the reaction chamber through the second gas inlet. A first flow settling device having plates disposed transverse to the flow of the first gas is positioned between the first gas inlet and plasma chamber. A second flow settling device may be located between the second gas supplying device and second gas inlet.

    摘要翻译: 一种用于在反应室中的基板表面附近的反应室中使第一气体和第二气体彼此反应而在基板上形成薄膜的装置。 该装置具有邻近反应室设置的等离子体产生室,用于沿预定方向产生第一气体的等离子体。 第一气体入口设置在等离子体产生室和反应室之间的边界处并形成为沿预定方向延伸,而第二气体入口设置在第一气体入口附近并沿预定方向延伸。 该装置还具有:第一气体供给装置,其用于将第一气体引入等离子体发生室,并且通过第一气体入口将等离子体产生室中的等离子体激活的第一气体引入反应室;第二气体供给装置, 通过第二气体入口将第二气体供应到反应室中。 具有横向于第一气体的流动设置的板的第一流动沉降装置位于第一气体入口和等离子体室之间。 第二流动沉降装置可以位于第二气体供给装置和第二气体入口之间。