公开(公告)号：US20050175926A1

公开(公告)日：2005-08-11

申请号：US10519542

申请日：2003-06-26

申请人： Yoshiki Sugeta ,  Fumitake Kaneko ,  Toshikazu Tachikawa

发明人： Yoshiki Sugeta ,  Fumitake Kaneko ,  Toshikazu Tachikawa

IPC分类号： G03F7/40 ,  H01L21/027 ,  G03C1/492 ,  G03C1/494 ,  G03C1/76

CPC分类号： G03F7/40 ,  H01L2051/0063

摘要： It is disclosed an over-coating agent for forming fine patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, with the applied film of the over-coating agent being removed substantially completely to form or define fine trace patterns, further characterized by containing either a water-soluble polymer and an amide group-containing monomer or a water-soluble polymer which contains at least (meth)acrylamide as a monomeric component. Also disclosed is a method of forming fine-line patterns using any one of said over-coating agents. According to the invention, the thermal shrinkage of the over-coating agent for forming fine patterns in the heat treatment can be extensively increased, and one can obtain fine-line patterns which exhibit good profiles while satisfying the characteristics required of semiconductor devices.

摘要翻译： 公开了一种用于形成精细图案的覆盖剂，其用于覆盖其上具有光致抗蚀剂图案的基底并且允许在加热下收缩，使得相邻的光致抗蚀剂图案之间的间隔被减小，涂覆剂的涂布膜 基本上完全除去以形成或限定精细痕迹图案，其特征还在于含有水溶性聚合物和含酰胺基的单体或至少含有（甲基）丙烯酰胺作为单体组分的水溶性聚合物。 还公开了使用任何一种所述覆盖剂形成细线图案的方法。 根据本发明，可以广泛地提高用于在热处理中形成精细图案的外涂剂的热收缩率，并且可以获得在满足半导体器件所需的特性的情况下具有良好外形的细线图案。

公开(公告)号：US06245930B1

公开(公告)日：2001-06-12

申请号：US09317208

申请日：1999-05-24

申请人： Katsumi Oomori ,  Hideo Hada ,  Fumitake Kaneko ,  Mitsuru Sato ,  Kazufumi Sato ,  Toshimasa Nakayama

发明人： Katsumi Oomori ,  Hideo Hada ,  Fumitake Kaneko ,  Mitsuru Sato ,  Kazufumi Sato ,  Toshimasa Nakayama

IPC分类号： C07C25500

CPC分类号： G03F7/0045 ,  Y10S430/12 ,  Y10S430/122

摘要： Proposed is a novel chemical-sensitization resist composition capable of giving a positively or negatively patterned resist layer of excellent pattern resolution and cross sectional profile of the patterned resist layer with high sensitivity. Characteristically, the resist composition is formulated, as combined with a resinous ingredient which is subject to changes in the solubility behavior in an alkaline developer solution by interaction with an acid, with a specific oximesulfonate compound as the radiation-sensitive acid-generating agent represented by the general formula R1—C(CN)═N—O—SO2—R2, in which R1 is an inert organic group and R2 is an unsubstituted or substituted polycyclic monovalent hydrocarbon group selected from the group consisting of polycyclic aromatic hydrocarbon groups such as naphthyl and polycyclic non-aromatic hydrocarbon groups such as a terpene or camphor residue.

摘要翻译： 提出了一种能够以高灵敏度赋予图案化抗蚀剂层优异图案分辨率和截面轮廓的正或负图案化抗蚀剂层的新型化学增感抗蚀剂组合物。 特别地，将抗蚀剂组合物配制成与通过与酸相互作用而在碱性显影剂溶液中溶解度行为发生变化的树脂成分与特定的肟磺酸酯化合物作为辐射敏感性产酸剂， R 1为惰性有机基团，R2为未取代或取代的选自多环芳烃基如萘基和多环非芳族烃基如萜烯或樟脑残基的多环一价烃基。

公开(公告)号：US6087068A

公开(公告)日：2000-07-11

申请号：US271899

申请日：1999-03-18

申请人： Mitsuru Sato ,  Katsumi Oomori ,  Etsuko Iguchi ,  Kiyoshi Ishikawa ,  Fumitake Kaneko

发明人： Mitsuru Sato ,  Katsumi Oomori ,  Etsuko Iguchi ,  Kiyoshi Ishikawa ,  Fumitake Kaneko

IPC分类号： G03F7/11 ,  C09K3/00 ,  G03F7/09 ,  H01L21/027

CPC分类号： G03F7/091

摘要： Proposed is a novel undercoating composition to form an undercoating layer interposed between the surface of a substrate and a photoresist layer with an object to decrease the adverse influences by the reflection of light on the substrate surface in the pattern-wise exposure of the photo-resist layer to ultraviolet light without the undesirable phenomena of intermixing between layers and notching along with a large selectivity ratio in the etching rates between the patterned resist layer and the undercoating layer in a dry-etching treatment. The undercoating composition comprises (A) an ultraviolet absorber which is a benzophenone compound or an aromatic azomethine compound each having at least one unsubstituted or alkyl-substituted amino group on the aryl groups and (B) a crosslinking agent which is preferably a melamine compound having at least two methylol groups or alkoxymethyl groups bonded to the nitrogen atoms in a molecule in a weight proportion (A):(B) in the range from 1:1 to 1:10.

摘要翻译： 提出了一种新颖的底涂层组合物，用于形成底涂层和介于光致抗蚀剂层之间的底涂层，其目的是减少光抗蚀剂图案曝光中光在基板表面上的反射的不利影响 在干蚀刻处理中，在图案化的抗蚀剂层和底涂层之间的蚀刻速率方面，层间相对紫外光没有不希望的层之间的混合现象和开槽以及大的选择比。 底涂层组合物包含（A）紫外线吸收剂，其为在芳基上具有至少一个未取代或烷基取代的氨基的二苯甲酮化合物或芳族偶氮甲碱化合物，（B）优选三聚氰胺化合物的交联剂，其具有 至少两个羟甲基或分子中的氮原子以重量比（A）：（B））键合在1：1至1:10范围内的烷氧基甲基。

公开(公告)号：US5700625A

公开(公告)日：1997-12-23

申请号：US630621

申请日：1996-04-10

申请人： Mitsuru Sato ,  Katsumi Oomori ,  Kiyoshi Ishikawa ,  Etsuko Iguchi ,  Fumitake Kaneko

发明人： Mitsuru Sato ,  Katsumi Oomori ,  Kiyoshi Ishikawa ,  Etsuko Iguchi ,  Fumitake Kaneko

IPC分类号： G03F7/004 ,  G03F7/038 ,  H01L21/027

CPC分类号： G03F7/0045 ,  G03F7/038

摘要： Disclosed is a novel chemical-sensitization type negative-working photoresist composition capable of exhibiting high sensitivity to actinic rays and giving a patterned resist layer with high resolution and excellently orthogonal cross sectional profile of the patterned resist layer without occurrence of microbridges. The composition comprises (a) a poly(hydroxystyrene)-based resin; (b) a compound capable of releasing an acid by the irradiation with actinic rays such as tris(2,3-dibromopropyl) isocyanurate; and (c) a crosslinking agent such as a urea resin and melamine resin, each in a specified weight proportion, the poly(hydroxystyrene)-based resin as the component (a) having such a dispersion of the molecular weight distribution that the ratio of the weight-average molecular weight M.sub.w to the number-average molecular weight M.sub.n does not exceed 1.4 and being substantially free from low molecular weight fractions including unpolymerized monomer and oligomers having a molecular weight smaller than 1000.

摘要翻译： 公开了一种新型化学增感型负性光致抗蚀剂组合物，其能够对光化射线表现出高灵敏度，并且提供了图案化抗蚀剂层的高分辨率和非常正交的截面轮廓的图案化抗蚀剂层，而不会发生微桥。 组合物包含（a）聚（羟基苯乙烯）类树脂; （b）能够通过光化射线如三（2,3-二溴丙基）异氰脲酸酯的照射而释放酸的化合物; 和（c）以规定重量比例的交联剂如尿素树脂和三聚氰胺树脂，作为组分（a）的聚（羟基苯乙烯）基树脂具有这样的分子量分布： 重均分子量Mw与数均分子量Mn不超过1.4，基本上不含低分子量级分，包括分子量小于1000的未聚合单体和低聚物。

公开(公告)号：US08206891B2

公开(公告)日：2012-06-26

申请号：US12573686

申请日：2009-10-05

申请人： Takehiro Seshimo ,  Yoshiyuki Utsumi ,  Akiya Kawaue ,  Takahiro Dazai ,  Tomoyuki Hirano ,  Fumitake Kaneko ,  Kotaro Endo

发明人： Takehiro Seshimo ,  Yoshiyuki Utsumi ,  Akiya Kawaue ,  Takahiro Dazai ,  Tomoyuki Hirano ,  Fumitake Kaneko ,  Kotaro Endo

IPC分类号： G03F7/004 ,  G03F7/30

CPC分类号： G03F7/0397 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/2041 ,  Y10S430/111 ,  Y10S430/123

摘要： A positive resist composition including: a base component (A) which includes a polymeric compound (A1) containing a structural unit (a0) represented by the general formula (a0-1) and a structural unit (a1) derived from an acrylate ester having an acid dissociable, dissolution inhibiting group; and an acid generator component (B) which includes an acid generator (B1) containing an anion moiety represented by the general formula (I): (in the formula (a0-1), R1 represents a hydrogen atom, a lower alkyl group of 1 to 5 carbon atoms or a halogenated lower alkyl group of 1 to 5 carbon atoms; R2 represents a bivalent linking group; and R3 represents a cyclic group containing —SO2— within the ring skeleton. In the formula (I), X represents a cyclic group of 3 to 30 carbon atoms, Q1 represents a bivalent linking group containing an oxygen atom; Y1 represents an alkylene group of 1 to 4 carbon atoms or a fluorinated alkylene group of 1 to 4 carbon atoms).

摘要翻译： 一种正型抗蚀剂组合物，其包含：包含含有由通式（a0-1）表示的结构单元（a0）的聚合化合物（A1）和由具有由通式（a0-1）表示的结构单元（a0））的结构单元（a1）的基础组分（A） 酸解离，溶解抑制组; 和含有由通式（I）表示的阴离子部分的酸发生剂（B1）的酸产生剂成分（B）：（式（a0-1）中，R 1表示氢原子，低级烷基 1〜5个碳原子的卤代低级烷基或1〜5个碳原子的卤代低级烷基; R2表示二价连接基团; R3表示环状骨架中含有-SO2-的环状基团，式（I）中，X表示 3〜30个碳原子的环状基团，Q1表示含有氧原子的二价连接基团，Y1表示碳原子数1〜4的亚烷基或碳原子数1〜4的氟化亚烷基。

公开(公告)号：US08187798B2

公开(公告)日：2012-05-29

申请号：US12591302

申请日：2009-11-16

申请人： Yoshiki Sugeta ,  Fumitake Kaneko ,  Toshikazu Tachikawa

发明人： Yoshiki Sugeta ,  Fumitake Kaneko ,  Toshikazu Tachikawa

IPC分类号： G03F7/26

CPC分类号： G03F7/40 ,  H01L21/0273

摘要： It is disclosed a method of forming fine patterns comprising: subjecting a substrate having photoresist patterns to a hydrophilic treatment, covering the substrate having photoresist patterns with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent substantially completely.

摘要翻译： 公开了一种形成精细图案的方法，包括：对具有光致抗蚀剂图案的基板进行亲水处理，用用于形成精细图案的过涂层覆盖具有光致抗蚀剂图案的基板，进行热处理以引起过热， 使得相邻的光致抗蚀剂图案之间的间隔由于所得的热收缩作用而减轻，并且基本上完全除去覆盖剂。

公开(公告)号：US08142980B2

公开(公告)日：2012-03-27

申请号：US12591924

申请日：2009-12-04

申请人： Yoshiki Sugeta ,  Fumitake Kaneko ,  Toshikazu Tachikawa ,  Naohisa Ueno

发明人： Yoshiki Sugeta ,  Fumitake Kaneko ,  Toshikazu Tachikawa ,  Naohisa Ueno

IPC分类号： G03F7/00 ,  G03F7/004

CPC分类号： G03F7/40 ,  H01L21/0273 ,  H01L21/0338 ,  H01L21/31144

摘要： It is disclosed an over-coating agent for forming fine-line patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, further characterized by comprising a water-soluble polymer which contains at least methacrylic acid and/or methyl methacrylate as the constitutive monomer thereof. Also disclosed is a method of forming fine-line patterns using the over-coating agent. The advantages of the invention are that the exposure margin is large, that the dimension control of photoresist patterns can be reflected on the dimension controllability in forming fine-line patterns, that the dimension control and planning of forming fine trace patterns after treatment for thermal shrinkage can be attained with ease in the stage of photoresist patterning, that the original photoresist pattern profile can be kept as such and the top of the photoresist pattern is not rounded after thermal shrinkage, that the degree of thermal shrinkage of the over-coating agent is large and thus the agent is effective in forming fine-line patterns.

摘要翻译： 公开了一种用于形成细线图案的过涂层剂，其用于覆盖其上具有光致抗蚀剂图案的基材并且允许在加热下收缩，使得相邻光致抗蚀剂图案之间的间隔减小，其特征还在于包含水溶性 至少含有甲基丙烯酸和/或甲基丙烯酸甲酯作为其组成单体的聚合物。 还公开了使用过涂层剂形成细线图案的方法。 本发明的优点在于曝光裕度大，光刻胶图案的尺寸控制可以反映在形成细线图案的尺寸可控性上，尺寸控制和规划在热收缩处理后形成精细痕迹图案 可以在光致抗蚀剂图案化阶段容易地获得，原始光致抗蚀剂图案轮廓可以保持原样，并且光致抗蚀剂图案的顶部在热收缩之后不是圆形的，因此外涂层的热收缩程度是 因此该试剂在形成细线图案方面是有效的。

公开(公告)号：US20100068662A1

公开(公告)日：2010-03-18

申请号：US12591302

申请日：2009-11-16

申请人： Yoshiki Sugeta ,  Fumitake Kaneko ,  Toshikazu Tachikawa

发明人： Yoshiki Sugeta ,  Fumitake Kaneko ,  Toshikazu Tachikawa

IPC分类号： G03F7/20

CPC分类号： G03F7/40 ,  H01L21/0273

摘要： It is disclosed a method of forming fine patterns comprising: subjecting a substrate having photoresist patterns to a hydrophilic treatment, covering the substrate having photoresist patterns with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent substantially completely.

摘要翻译： 公开了一种形成精细图案的方法，包括：对具有光致抗蚀剂图案的基板进行亲水处理，用用于形成精细图案的过涂层覆盖具有光致抗蚀剂图案的基板，进行热处理以引起过热， 使得相邻的光致抗蚀剂图案之间的间隔由于所得的热收缩作用而减轻，并且基本上完全除去覆盖剂。

公开(公告)号：US20090041948A1

公开(公告)日：2009-02-12

申请号：US12232663

申请日：2008-09-22

申请人： Hiroshi Shinbori ,  Yoshiki Sugeta ,  Fumitake Kaneko ,  Toshikazu Tachikawa

发明人： Hiroshi Shinbori ,  Yoshiki Sugeta ,  Fumitake Kaneko ,  Toshikazu Tachikawa

IPC分类号： B05D3/02

CPC分类号： G03F7/0035 ,  G03F7/40 ,  H01L21/0277

摘要： It is disclosed a method of forming fine patterns comprising repeating plural times the following course of steps: covering a substrate having thereon photoresist patterns with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between the adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent. The invention provides a method of forming fine patterns which has high ability to control pattern dimensions and provide fine patterns that have a satisfactory profile and satisfy the characteristics required of semiconductor devices, even in the case of employing a substrate having thick-film photoresist patterns in a thickness of about 1.0 μm or more.

摘要翻译： 公开了一种形成精细图案的方法，其包括多次重复以下步骤：用用于形成精细图案的过涂层覆盖其上具有光致抗蚀剂图案的基材，进行热处理以引起外涂层的热收缩 使得相邻的光致抗蚀剂图案之间的间隔由于所得到的热收缩作用而减轻，并且除去覆盖剂。 本发明提供一种形成精细图案的方法，其具有很高的控制图案尺寸的能力，并且提供具有令人满意的轮廓并且满足半导体器件所要求的特性的精细图案，即使在使用具有厚膜光致抗蚀剂图案的基板的情况下 约1.0μm或更大的厚度。

公开(公告)号：US20070141508A1

公开(公告)日：2007-06-21

申请号：US10587438

申请日：2005-01-24

申请人： Fumitake Kaneko ,  Toshikazu Tachikawa

发明人： Fumitake Kaneko ,  Toshikazu Tachikawa

IPC分类号： G03C1/00

CPC分类号： G03F7/0045 ,  G03F7/0382

摘要： Disclosed is a negative resist composition which enables to form a resist pattern with improved shape properties by reducing roughness. Also disclosed is a method for forming a resist pattern using such a negative resist composition. The negative resist composition contains at least an alkali-soluble resin, a crosslinking agent which is crosslinked with the alkali-soluble resin by the action of an acid, and an onium salt as a photoacid generator. The anion component of the onium salt is composed of at least a sulfonate having a polycyclic structure.

摘要翻译： 公开了一种负型抗蚀剂组合物，其能够通过降低粗糙度形成具有改善的形状性质的抗蚀剂图案。 还公开了使用这种负性抗蚀剂组合物形成抗蚀剂图案的方法。 负性抗蚀剂组合物至少含有碱溶性树脂，通过酸作用与碱溶性树脂交联的交联剂和作为光酸产生剂的鎓盐。 鎓盐的阴离子成分至少由具有多环结构的磺酸盐构成。